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91. 发明授权

US06879005B2 High withstand voltage semiconductor device 失效
标题翻译：高耐压半导体器件
公开(公告)号：US06879005B2
公开(公告)日：2005-04-12
申请号：US10790015
申请日：2004-03-02
申请人： Yoshihiro Yamaguchi , Akio Nakagawa
发明人： Yoshihiro Yamaguchi , Akio Nakagawa
IPC分类号： H01L29/06 , H01L29/40 , H01L29/739 , H01L29/78 , H01L29/861 , H01L29/76 , H01L29/94 , H01L31/062 , H01L31/113 , H01L31/119
CPC分类号： H01L29/405 , H01L29/0692 , H01L29/0696 , H01L29/404 , H01L29/7811 , H01L29/8611
摘要： A high withstand voltage semiconductor device, comprises: a substrate, a semiconductor layer formed on an upper surface of the substrate, a lateral semiconductor device formed in a surface region of the semiconductor layer and having a first principal electrode in its inner location and a second principal electrode in its outer location so as to let primary current flow between the first and second principal electrodes, a field insulation film formed inside from the second principal electrode in an upper surface of the semiconductor layer to surround the first principal electrode, a resistive field plate formed on an upper surface of the field insulation film to surround the first principal electrode and sectioned in a plurality of circular field plates in an approximate circular arrangement orbiting gradually from the vicinity of the first principal electrode toward the second principal electrode, the innermost one of the circular field plates being electrically connected to the first principal electrode while the outermost one is electrically connected to the second principal electrode, and the resistive field plate including coupling field plates which respectively connect adjacent ones of the circular field plates, and a conductive field plate shaped in a floating state right above spaces defined between pairs of the adjacent circular field plates, an interlayer insulation film being interposed between the conductive field plate and the resistive field plate or the circular field plates, and upon an application of voltage between the first and second principal electrodes, capacities being formed between the conductive field plate and the resistive field plate.
摘要翻译：一种高耐压半导体器件，包括：衬底，形成在衬底的上表面上的半导体层，形成在半导体层的表面区域中并且在其内部具有第一主电极的横向半导体器件，以及第二主电极在其外部位置，以便使第一和第二主电极之间的初级电流流动;在半导体层的上表面内的第二主电极内部形成围绕第一主电极的场绝缘膜，电阻场在所述场绝缘膜的上表面上形成围绕所述第一主电极并且以从所述第一主电极附近朝向所述第二主电极逐渐旋转的大致圆形布置的多个圆形场板分段形成的最内层的圆形场板电连接到第一个主电极，而最外面的电极电连接到第二主电极，并且电阻场板包括分别连接相邻的圆形场板的耦合场板和形成为浮动状态的导电场板，成对的相邻圆形场板，层间绝缘膜插入在导电场板和电阻场板或圆形场板之间，并且在施加第一和第二主电极之间的电压时，容量形成在导电场板和电阻场板。

92. 发明授权

US06650001B2 Lateral semiconductor device and vertical semiconductor device 失效
标题翻译：侧面半导体器件和垂直半导体器件
公开(公告)号：US06650001B2
公开(公告)日：2003-11-18
申请号：US10053657
申请日：2002-01-24
申请人： Yoshihiro Yamaguchi , Hideaki Ninomiya , Tomoki Inoue
发明人： Yoshihiro Yamaguchi , Hideaki Ninomiya , Tomoki Inoue
IPC分类号： H01L27082
CPC分类号： H01L29/0696 , H01L29/0834 , H01L29/7394 , H01L29/7397
摘要： A lateral semiconductor device includes an n-type buffer layer (15) selectively formed in the surface of an n-type base layer (14), a p-type drain layer (16) selectively formed in the surface of the n-type buffer layer (15), a p-type base layer (17) formed in the surface of the n-type base layer (14) so as to surround the n-type buffer layer (15), an n+-type source layer (18) selectively formed in the surface of the p-type base layer (17), a source electrode (24) in contact with the p-type base layer (17) and the n+-type source layer (18), a drain electrode (22) in contact with the p-type drain layer (16), and a gate electrode (20) formed via a gate insulating film (19) on the surface of the p-type base layer (17) sandwiched between the n+-type source layer (18) and the n-type base layer (14). The p-type drain layer (16) has an annular structure or horseshoe-shaped structure, or is divided into a plurality of portions. This realizes a high breakdown voltage with a low ON voltage.
摘要翻译：横向半导体器件包括：n型缓冲层（15），其选择性地形成在n型基极层（14）的表面; p型漏极层（16），其选择性地形成在n型缓冲层层（15），形成在n型基底层（14）的表面中以围绕n型缓冲层（15）的p型基底层（17），n +型源选择性地形成在p型基底层（17）的表面中的层（18），与p型基底层（17）和n +型源极层（18）接触的源极（24）），与p型漏极层（16）接触的漏电极（22）和在p型基极层（17）的表面上经由栅极绝缘膜（19）形成的栅电极（20）夹在n +型源极层（18）和n型基极层（14）之间。 p型漏极层（16）具有环状结构或马蹄形结构，或分为多个部分。这实现了具有低导通电压的高击穿电压。

93. 发明授权

US06527510B2 Stator blade and stator blade cascade for axial-flow compressor 有权
公开(公告)号：US06527510B2
公开(公告)日：2003-03-04
申请号：US09866924
申请日：2001-05-30
申请人： Markus Olhofer , Bernhard Sendhoff , Edgar Körner , Yoshihiro Yamaguchi , Toyotaka Sonoda , Toshiyuki Arima
发明人： Markus Olhofer , Bernhard Sendhoff , Edgar Körner , Yoshihiro Yamaguchi , Toyotaka Sonoda , Toshiyuki Arima
IPC分类号： F04D2944
CPC分类号： F04D29/681 , F04D21/00 , F04D29/544
摘要： It is an object of the present invention to provide a stator blade for an axial-flow compressor, in which the wave drag due to the generation of a shock wave in a transonic speed range can be suppressed to the minimum. For this purpose, the stator blade in the axial-flow compressor has an intrados producing a positive pressure, and an extrados producing a negative pressure. Both of the intrados and the extrados are located on one side of a chord line. A first bulge and a second bulge are formed on the intrados of the stator blade at a location on the side of a leading edge and on the side of a trailing edge, respectively. Thus, the generation of a shock wave on the extrados can be moderated to reduce the wave drag by positively producing the separation of a boundary layer on the intrados by the first bulge. In addition, the boundary layer rendered unstable by the first bulge on the intrados can be stabilized again by the second bulge on the intrados and hence, the increase in frictional drag due to the separation of the boundary layer on the intrados can be suppressed to the minimum.

94. 外观设计

USD446231S1 Nozzle for a plasma arc torch 失效
公开(公告)号：USD446231S1
公开(公告)日：2001-08-07
申请号：US29128161
申请日：2000-08-21
申请人： Kazuhiro Kuraoka , Yoshihiro Yamaguchi
设计人： Kazuhiro Kuraoka , Yoshihiro Yamaguchi

95. 发明授权

US5994740A Semiconductor device 失效
标题翻译：半导体器件
公开(公告)号：US5994740A
公开(公告)日：1999-11-30
申请号：US972148
申请日：1997-11-17
申请人： Akio Nakagawa , Yoshihiro Yamaguchi , Tomoko Matsudai
发明人： Akio Nakagawa , Yoshihiro Yamaguchi , Tomoko Matsudai
IPC分类号： H01L21/84 , H01L27/12 , H01L27/01 , H01L31/0392
CPC分类号： H01L21/84 , H01L27/1203
摘要： An n.sup.- -type silicon active layer having a thickness of 6 .mu.m or less is formed on a silicon substrate via a silicon oxide film. An npn bipolar transistor with a low withstand voltage and an IGBT with a high withstand voltage are formed in the active layer. The two devices are insulated and isolated from each other through a trench. The bipolar transistor has an n-type well layer formed in the surface of the active layer. A p-type well layer is formed in the surface of the n-type well layer. The thickness of the n-type well layer under the p-type well layer is set to be 1 .mu.m or more. A first n.sup.+ -type diffusion layer is formed in the surface of the n-type well layer. A p.sup.+ -type diffusion layer and a second n.sup.+ -type diffusion layer are formed in the surface of the p-type well layer. The n-type well layer and the first n.sup.+ -type diffusion layer serve as a collector region. The p-type well layer and the p.sup.+ -type diffusion layer serve as a base region. The second n.sup.+ -type diffusion layer serves as an emitter region.
摘要翻译：通过氧化硅膜在硅衬底上形成厚度为6μm以下的n型硅有源层。在有源层中形成具有低耐压的npn双极晶体管和具有高耐压的IGBT。两个器件通过沟槽彼此绝缘和隔离。双极晶体管在有源层的表面形成有n型阱层。 p型阱层形成于n型阱层的表面。 p型阱层下面的n型阱层的厚度设定为1μm以上。在n型阱层的表面形成第一n +型扩散层。在p型阱层的表面形成p +型扩散层和第n +型扩散层。 n型阱层和第一n +型扩散层用作集电极区域。 p型阱层和p +型扩散层用作基极区域。第二n +型扩散层用作发射极区域。

96. 发明授权

US5777371A High-breakdown-voltage semiconductor device 失效
标题翻译：高击穿电压半导体器件
公开(公告)号：US5777371A
公开(公告)日：1998-07-07
申请号：US716863
申请日：1996-09-20
申请人： Yusuke Kawaguchi , Yoshihiro Yamaguchi , Hideyuki Funaki
发明人： Yusuke Kawaguchi , Yoshihiro Yamaguchi , Hideyuki Funaki
IPC分类号： H01L29/06 , H01L29/10 , H01L29/423 , H01L29/78 , H01L29/76 , H01L29/94
CPC分类号： H01L29/7816 , H01L29/0696 , H01L29/1095 , H01L29/7801 , H01L29/7824 , H01L29/42368
摘要： A high-breakdown-voltage semiconductor device includes a high-resistance semiconductor layer, a drift layer of the first conductivity type selectively formed in the surface of the high-resistance semiconductor layer, a drain layer formed in the surface of the drift layer of the first conductivity type, base layers of the second conductivity type selectively formed in the surface of the high-resistance semiconductor layer, a plurality of island-shaped source layers of the first conductivity type formed in the surfaces of the base layers of the second conductivity type, a gate electrode formed on the base layers of the second conductivity type between the source layers of the first conductivity type and the drift layer of the first conductivity type and between adjacent source layers of the first conductivity type via a gate insulating film, a drain electrode which contacts the drain layer, and source electrodes which contact both the source layers of the first conductivity type and the base layers of the second conductivity type.
摘要翻译：高耐压半导体器件包括高电阻半导体层，选择性地形成在高电阻半导体层的表面中的第一导电类型的漂移层，形成在所述高电阻半导体层的漂移层的表面中的漏极层第一导电类型，选择性地形成在高电阻半导体层的表面中的第二导电类型的基极层，形成在第二导电类型的基极层的表面中的多个第一导电类型的岛状源极层形成在第一导电类型的源极层和第一导电类型的漂移层之间的第二导电类型的基极层上的栅极电极和经由栅极绝缘膜的第一导电类型的相邻源极层之间，与漏极层接触的电极以及接触第一导电类型的源极层的源电极第二导电类型的基层。

97. 发明授权

US5438220A High breakdown voltage semiconductor device 失效
标题翻译：高击穿电压半导体器件
公开(公告)号：US5438220A
公开(公告)日：1995-08-01
申请号：US085056
申请日：1993-07-02
申请人： Akio Nakagawa , Norio Yasuhara , Tomoko Matsudai , Yoshihiro Yamaguchi , Ichiro Omura , Hideyuki Funaki
发明人： Akio Nakagawa , Norio Yasuhara , Tomoko Matsudai , Yoshihiro Yamaguchi , Ichiro Omura , Hideyuki Funaki
IPC分类号： H01L21/336 , H01L21/74 , H01L21/762 , H01L27/06 , H01L27/092 , H01L27/12 , H01L29/06 , H01L29/08 , H01L29/40 , H01L29/739 , H01L29/74 , H01L29/745 , H01L29/749 , H01L29/78 , H01L29/786 , H01L29/861
CPC分类号： H01L29/404 , H01L21/74 , H01L21/76264 , H01L21/76297 , H01L27/0623 , H01L27/0922 , H01L27/1203 , H01L29/0834 , H01L29/402 , H01L29/405 , H01L29/407 , H01L29/408 , H01L29/66772 , H01L29/7394 , H01L29/7436 , H01L29/7455 , H01L29/749 , H01L29/7824 , H01L29/7835 , H01L29/78624 , H01L29/8611 , H01L21/76275 , H01L21/76286 , H01L29/78603 , H01L2924/0002
摘要： A high breakdown voltage semiconductor device includes a semiconductor substrate, an insulating layer formed on the semiconductor substrate, an active layer formed on the insulating layer and made of a high resistance semiconductor of a first conductivity type, a first impurity region of the first conductivity type formed in the active layer, and a second impurity region of a second conductivity type formed in the active layer and spaced apart from the first impurity region by a predetermined distance. The first impurity region is formed of diffusion layers. The diffusion layers are superimposed one upon another and differ in diffusion depth or diffusion window width, or both.
摘要翻译：高耐压半导体器件包括半导体衬底，形成在半导体衬底上的绝缘层，形成在绝缘层上并由第一导电类型的高电阻半导体形成的有源层，第一导电类型的第一杂质区形成在有源层中的第二杂质区和形成在有源层中并与第一杂质区隔开预定距离的第二导电类型的第二杂质区。第一杂质区由扩散层形成。扩散层彼此叠加并且扩散深度或扩散窗宽度不同，或两者均不同。

98. 发明授权

US5428228A Method of operating thyristor with insulated gates 失效
标题翻译：用绝缘栅极操作晶闸管的方法
公开(公告)号：US5428228A
公开(公告)日：1995-06-27
申请号：US164756
申请日：1993-12-10
申请人： Tsuneo Ogura , Kiminori Watanabe , Akio Nakagawa , Yoshihiro Yamaguchi , Norio Yasuhara , Tomoko Matsudai , Shigeru Hasegawa , Kazuya Nakayama
发明人： Tsuneo Ogura , Kiminori Watanabe , Akio Nakagawa , Yoshihiro Yamaguchi , Norio Yasuhara , Tomoko Matsudai , Shigeru Hasegawa , Kazuya Nakayama
IPC分类号： H01L27/06 , H01L29/74 , H01L29/745 , H01L29/749 , H01L29/747
CPC分类号： H01L27/0617 , H01L29/7436 , H01L29/7455 , H01L29/749
摘要： A thyristor with insulated gates includes turn-off and turn-on MOSFETs. The turn-on MOSFET has a turn-on gate employing a p-type base as a channel and extending over an n-type base and an n-type emitter. The turn-off MOSFET has n-type drain and source layers formed in a p-type base layer, and a turn-off gate extending over the drain and source layers. The n-type drain layer is short-circuited with the p-type base layer via a drain electrode. The drain electrode is formed near an n-type emitter layer. When the thyristor is to be turned off, the first voltage is applied to the turn-on gate, and the second voltage is applied to the turn-off gate while the first voltage is applied to the turn-on gate. After the application of the second voltage continues for a predetermined period of time, the application of the first voltage to the turn-on gate is stopped. With this operation, the thyristor can be turned off even with a large current.
摘要翻译：具有绝缘栅极的晶闸管包括关断和导通MOSFET。导通MOSFET具有采用p型基极作为沟道并在n型基极和n型发射极上延伸的导通栅极。关断MOSFET具有形成在p型基极层中的n型漏极和源极层，以及在漏极和源极层上延伸的截止栅极。 n型漏极层经由漏电极与p型基极层短路。在n型发射极层附近形成漏电极。当晶闸管关断时，第一电压被施加到导通栅极，并且第二电压被施加到关断栅极，同时第一电压被施加到导通栅极。在第二电压的施加持续预定时间段之后，停止向导通门施加第一电压。通过这种操作，即使使用大电流，晶闸管也可以关闭。

99. 发明授权

US5393952A Plasma torch for cutting use with nozzle protection cap having annular secondary GPS passage and insulator disposed in the secondary gas passage 失效
标题翻译：用于切割的等离子割炬与具有环形二次GPS通道的喷嘴保护帽和设置在二次气体通道中的绝缘体一起使用
公开(公告)号：US5393952A
公开(公告)日：1995-02-28
申请号：US107815
申请日：1993-08-18
申请人： Yoshihiro Yamaguchi , Hitoshi Satoh , Toshiya Shintani
发明人： Yoshihiro Yamaguchi , Hitoshi Satoh , Toshiya Shintani
IPC分类号： H05H1/34 , B23K10/00
CPC分类号： H05H1/34 , H05H2001/3436 , H05H2001/3457 , H05H2001/3468 , H05H2001/3478
摘要： A plasma torch for cutting use comprises a torch body, a water-cooled electrode arranged in the torch body, a nozzle arranged outside the electrode so as to cover the electrode through a plasma gas passage formed therebetween, a nozzle cap covering the nozzle, a nozzle protection cap having, on its front end side, an opening opposing to an orifice of the nozzle and being disposed outside the nozzle cap through an annular secondary gas passage communicating with the opening, the nozzle protection cap being arranged in the secondary gas passage in an electrically insulated state from the electrode and the nozzle, and an insulator disposed in the secondary gas passage and formed of an electrically insulating material, the insulator having a rectifying passage for rectifying a gas flow passing the secondary gas passage. The nozzle protection cap is composed of a front end portion and a base end portion secured to the torch body and the front end portion and the base end portion are detachably coupled with each other.
摘要翻译： PCT No.PCT / JP92 / 00239 Sec。 371日期：1993年8月18日 102（e）日期1993年8月18日PCT提交1992年2月28日PCT公布。公开号WO92 / 15421 日期：1992年9月17日。一种用于切割用途的等离子体焰炬包括：炬体，设置在炬体内的水冷电极，设置在电极外部的喷嘴，以通过形成在其间的等离子体气体通道覆盖电极; 喷嘴盖覆盖喷嘴，喷嘴保护盖在其前端侧具有与喷嘴的孔相对的开口，并且通过与开口连通的环形二次气体通道设置在喷嘴帽的外部，喷嘴保护盖是以与电极和喷嘴的电绝缘状态配置在二次气体通路中的绝缘体，以及设置在二次气体通路中并由电绝缘材料形成的绝缘体，所述绝缘体具有整流通路，用于对通过二次气体的气流进行整流通道。喷嘴保护盖由前端部和固定于炬体的基端部构成，前端部和基端部可拆卸地连结。

100. 发明授权

US5036176A Plasma arc cutter and method of controlling the same 失效
标题翻译：等离子弧刀及其控制方法
公开(公告)号：US5036176A
公开(公告)日：1991-07-30
申请号：US427106
申请日：1989-10-18
申请人： Yoshihiro Yamaguchi , Iwao Kuorkawa
发明人： Yoshihiro Yamaguchi , Iwao Kuorkawa
IPC分类号： B23K9/06 , B23K10/00 , H05H1/36
CPC分类号： B23K9/06 , B23K10/006 , H05H1/36
摘要： In a plasma arc cutter and a method of controlling the same, a rise compensating circuit (39) and a shift compensating circuit (44) both composed of a charging and discharging capacitor and a resistor are respectively inserted in parallel between an electrode-side connection (21) and a nozzle-side connection (35) and between the electrode-side connection (21) and a workpiece-side connection (34), and a diode (33) is provided on the workpiece-side connection in such a manner as to be inserted between a connecting point (36) of the nozzle-side connection and a connecting point (43) of the shift compensating circuit. A detector (31) for controlling a current is provided on the electrode-side connection at a position closer to the electrode side than a connecting point (37) of the rise compensating circuit, and a detector (32) for detecting a shift is provided on the workpiece-side connection at a position closer to the workpiece side than the connecting point (43) of the shift compensating circuit. In addition, to effect cutting after boring, at least one plasma torch ( 14a) for boring and at least one plasma torch (14b) for cutting are provided. Furthermore, the voltage between an electrode (14) and a workpiece (17) or between a nozzle (15) and the workpiece (17) is detected, and the power source is stopped when that voltage exceeds a predetermined value. Consequently, since a shift from a pilot arc to a main arc is facilitated, cutting is performed by the exclusive plasma torch, and the occurrence of a double arc is prevented, cutting precision and cutting efficiency are enhanced.
摘要翻译： PCT No.PCT / JP89 / 00305 Sec。 371日期：1989年10月18日 102（e）日期1989年10月18日PCT 1989年3月23日PCT公布。出版物WO89 / 09110 在等离子弧切割机及其控制方法中，分别将由充放电电容器和电阻器组成的上升补偿电路（39）和移位补偿电路（44）分别插入在电极侧连接部（21）和喷嘴侧连接部（35）之间以及电极侧连接部（21）与工件侧连接部（34）之间并列设置有二极管（33）以插入在喷嘴侧连接的连接点（36）和移动补偿电路的连接点（43）之间的方式连接。在比上升补偿电路的连接点（37）更靠近电极侧的位置处，在电极侧连接处设置用于控制电流的检测器（31），并且提供用于检测偏移的检测器（32）在比移动补偿电路的连接点（43）更靠近工件侧的位置处的工件侧连接。此外，为了在钻孔之后进行切割，提供至少一个用于钻孔的等离子体焰炬（14a）和用于切割的至少一个等离子体焰炬（14b）。此外，检测电极（14）和工件（17）之间或喷嘴（15）与工件（17）之间的电压，并且当电压超过预定值时停止电源。因此，由于能够容易地从先导电弧向主电弧的转移，所以通过专用等离子体焰炬进行切断，防止发生双电弧，提高切割精度和切割效率。

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