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91. 发明授权

US5855687A Substrate support shield in wafer processing reactors 失效
标题翻译：晶圆处理反应器中的基板支撑屏蔽
公开(公告)号：US5855687A
公开(公告)日：1999-01-05
申请号：US326506
申请日：1994-10-20
申请人： Dale R. DuBois , Alan F. Morrison , Richard A. Marsh , Mei Chang
发明人： Dale R. DuBois , Alan F. Morrison , Richard A. Marsh , Mei Chang
IPC分类号： C23C16/44 , C23C16/04 , C23C16/455 , C23C16/458 , H01L21/205 , H01L21/285 , H01L21/683 , H01L21/687 , C23C16/00 , C23C14/00 , C23F1/00 , H01L21/00
CPC分类号： C23C16/45521 , C23C16/04 , C23C16/042 , C23C16/4585 , H01L21/68735
摘要： Apparatus for CVD processing wherein a wafer mounted on a vertically movable susceptor beneath a showerhead. The susceptor extends beyond the outer perimeter of the wafer such that, when the susceptor is raised into contact with a shield ring which normally rests on a ring support in the chamber, the shield ring engages outer portion of the susceptor beyond the perimeter of the wafer, lifting the shield ring off its support. The shield ring shields the edge of the top surface of the susceptor during the deposition, whereby unwanted deposition on the susceptor is prevented while, at the same time, allowing for deposition over the entire upper surface of the wafer. To center the shield ring and the susceptor with respect to each other, the shield ring may include a plurality of centering protrusions, at least some of which engage the susceptor as it moves upwards to lift the shield ring off its supports in the chamber.
摘要翻译：用于CVD处理的装置，其中安装在淋浴喷头下方的垂直移动的基座上的晶片。感受体延伸超过晶片的外周边，使得当基座升高成与通常位于室中的环支撑件上的屏蔽环接触时，屏蔽环接合基座的外部部分超过晶片的周边将护盾环从支架上取下。屏蔽环在沉积期间屏蔽基座的顶表面的边缘，由此防止基座上的不希望的沉积，同时允许沉积在晶片的整个上表面上。为了将屏蔽环和基座相对于彼此定位，屏蔽环可以包括多个定心突起，当其向上移动以将屏蔽环从腔室中的支撑件提升时，至少一些定心突起接合基座。

92. 发明授权

US5510297A Process for uniform deposition of tungsten silicide on semiconductor wafers by treatment of susceptor having aluminum nitride surface thereon with tungsten silicide after cleaning of susceptor 失效
标题翻译：通过在清洁基座之后用硅化钨表面处理其上具有氮化铝表面的基座来均匀沉积半导体晶片上的硅化钨的工艺
公开(公告)号：US5510297A
公开(公告)日：1996-04-23
申请号：US504294
申请日：1995-08-10
申请人： Susan Telford , Michio Aruga , Mei Chang
发明人： Susan Telford , Michio Aruga , Mei Chang
IPC分类号： H01L21/205 , C23C16/42 , H01L21/283
CPC分类号： C23C16/42 , C23C16/4404 , C23C16/4405 , H01L21/28518 , H01L21/28556 , Y10S148/006 , Y10S148/147 , Y10S438/906
摘要： Disclosed is a process for the formation of a tungsten silicide layer on an integrated circuit structure of a semiconductor wafer mounted on a susceptor in a vacuum chamber, wherein the tungsten silicide layer is applied at a temperature of at least 500.degree. C. and the susceptor has an aluminum nitride surface. After the chamber has been cleaned with one or more fluorine-containing etchant gases, the improvement comprises depositing a layer of tungsten silicide on the surface of the susceptor prior to an initial deposition of tungsten silicide on a wafer mounted on the susceptor after cleaning with the fluorine-containing etchant gases.
摘要翻译：公开了一种在安装在真空室中的基座上的半导体晶片的集成电路结构上形成硅化钨层的方法，其中在至少500℃的温度下施加硅化钨层，并且基座具有氮化铝表面。在用一种或多种含氟蚀刻剂气体清洗该腔室之后，改进之处在于，在将硅化钨初始沉积在安装在基座上的晶片上之后，在基板的表面上沉积硅化钨层，含氟蚀刻剂气体。

93. 发明授权

US5482749A Pretreatment process for treating aluminum-bearing surfaces of deposition chamber prior to deposition of tungsten silicide coating on substrate therein 失效
标题翻译：在将硅化钨涂层沉积在其上的基板上之前处理沉积室的含铝表面的预处理过程
公开(公告)号：US5482749A
公开(公告)日：1996-01-09
申请号：US364022
申请日：1994-12-23
申请人： Susan Telford , Michio Aruga , Mei Chang
发明人： Susan Telford , Michio Aruga , Mei Chang
IPC分类号： C23C16/42 , C23C16/44 , B05D3/06 , B05D7/22
CPC分类号： C23C16/42 , C23C16/4404
摘要： A process is disclosed for pretreating aluminum-bearing surfaces in a vacuum deposition chamber after a previous step of cleaning the chamber, and prior to depositing tungsten silicide on substrates in the chamber, which first comprises treating the aluminum-bearing surfaces with a mixture of silane and a tungsten-bearing gas, such as WF.sub.6, to form a first deposition of a silane-based tungsten silicide on the aluminum-bearing surfaces. In a preferred embodiment, the process further comprises subsequently treating the already coated aluminum-bearing surfaces of the chamber in a second step with a mixture of a tungsten-bearing gas, such as WF.sub.6, and a chlorine-substituted silane such as dichlorosilane (SiH.sub.2 Cl.sub.2), monochlorosilane (SiH.sub.3 Cl), or trichlorosilane (SiHCl.sub.3) to form a chlorine-substituted silane-based tungsten silicide deposition over the previous deposited silane-based tungsten silicide.
摘要翻译：公开了一种用于在先前清洁室的步骤之后以及在室内的基底上沉积硅化钨之前在真空沉积室中预处理铝承载表面的方法，其首先包括用硅烷混合物处理含铝表面和诸如WF6的含钨气体，以在铝承载表面上形成硅烷基硅化钨的第一次沉积。在优选的实施方案中，该方法还包括随后在第二步中用含钨气体（例如WF 6）和氯取代的硅烷如二氯硅烷（SiH 2 Cl 2）的混合物处理已经涂覆的室内铝表面），一氯硅烷（SiH 3 Cl）或三氯硅烷（SiHCl 3），以在先前沉积的硅烷基硅化钨上形成氯取代的硅烷基硅化钨沉积物。

94. 发明授权

US5421401A Compound clamp ring for semiconductor wafers 失效
标题翻译：用于半导体晶片的复合夹环
公开(公告)号：US5421401A
公开(公告)日：1995-06-06
申请号：US187231
申请日：1994-01-25
申请人： Semyon Sherstinsky , Mei Chang , Charles C. Harris , Alan F. Morrison , Virendra V. S. Rana , James F. Roberts , Ashok K. Sinha , Simon Tam
发明人： Semyon Sherstinsky , Mei Chang , Charles C. Harris , Alan F. Morrison , Virendra V. S. Rana , James F. Roberts , Ashok K. Sinha , Simon Tam
IPC分类号： C23C14/50 , C23C16/458 , H01L21/687 , F28F7/00 , C23C16/00
CPC分类号： H01L21/68721 , C23C14/50 , C23C16/4585 , Y10S269/903
摘要： A compound clamp ring secures a semiconductor wafer having a wafer flat portion to a wafer pedestal during wafer processing while maintaining a continuous seal between the wafer edges and the wafer pedestal to prevent leakage of coolant gases circulated at the backside of the wafer into the process environment. The clamp ring has an annular wafer clamp surface adapted to press a round portion of the wafer into sealing abutment with the wafer pedestal. A cavity formed in the clamp ring securely receives a comb-like array of resilient flexures that are adapted to apply a yieldable bias to the flat portion of the wafer to complete the seal between the wafer and the pedestal at the flat portion of the wafer; and encloses the flexures to shield the flexures from process gases.
摘要翻译：复合夹环在晶片处理期间将具有晶片平坦部分的半导体晶片固定到晶片基座，同时保持晶片边缘和晶片基座之间的连续密封，以防止在晶片背面循环的冷却剂气体泄漏到工艺环境中。夹紧环具有适于将晶圆的圆形部分压紧到与晶片基座密封抵接的环形晶片夹紧表面。形成在夹紧环中的空腔牢固地容纳弹性挠曲的梳状阵列，其适于对晶片的平坦部分施加可屈服的偏压，以在晶片的平坦部分处完成晶片和基座之间的密封; 并包围挠曲件以将工件气体的挠曲屏蔽。

95. 发明授权

US5356835A Method for forming low resistance and low defect density tungsten contacts to silicon semiconductor wafer 失效
标题翻译：用于形成低电阻和低缺陷密度钨触点到硅半导体晶片的方法
公开(公告)号：US5356835A
公开(公告)日：1994-10-18
申请号：US78364
申请日：1993-06-16
申请人： Sasson Somekh , Jaim Nulman , Mei Chang
发明人： Sasson Somekh , Jaim Nulman , Mei Chang
IPC分类号： H01L21/28 , H01L21/285 , H01L21/768 , H01L23/532 , H01L21/44 , H01L21/48
CPC分类号： H01L21/76876 , H01L21/28518 , H01L21/76843 , H01L21/76855 , H01L21/76856 , H01L21/76877 , H01L23/53257 , H01L2924/0002 , Y10S438/907
摘要： An improved process is described for forming planar tungsten-filled contacts to a silicon substrate in contact openings through an insulating layer which provides for the formation of titanium silicide in and on the silicon surface at the bottom of the contact openings to provide low resistance silicide interconnections between the silicon substrate and the tungsten. A titanium nitride layer is formed over the titanium silicide and on the surfaces of the insulation layer, including the top surface of the insulation layer and the sidewall surfaces of the contact openings through the insulating layer. This titanium nitride layer provides a nucleation layer which permits a good bond to form from the tungsten through the titanium nitride and titanium silicide in the contact openings to the silicon substrate; and from the tungsten through the titanium nitride layer to the insulator material such as silicon dioxide (SO.sub.2), resulting in the formation of low resistance and low defect density contacts.
摘要翻译：描述了一种改进的方法，用于在通过绝缘层的接触开口中的硅衬底上形成平坦的钨填充触点，其提供了在接触开口底部的硅表面中和硅表面上形成硅化钛以提供低电阻硅化物互连在硅衬底和钨之间。在钛硅化物之上和绝缘层的表面上形成氮化钛层，包括绝缘层的顶表面和穿过绝缘层的接触开口的侧壁表面。该氮化钛层提供成核层，其允许通过氮化钛和硅化钛在与硅衬底的接触开口中从钨形成良好的结合; 并且从钨通过氮化钛层到绝缘体材料如二氧化硅（SO2），导致形成低电阻和低缺陷密度接触。

96. 发明授权

US5326725A Clamping ring and susceptor therefor 失效
标题翻译：夹环和感受器
公开(公告)号：US5326725A
公开(公告)日：1994-07-05
申请号：US31259
申请日：1993-03-11
申请人： Semyon Sherstinsky , Charles C. Harris , Mei Chang , Dale R. Du Bois , James F. Roberts , Susan Telford , Ronald L. Rose , Meng C. Tseng , Karl A. Littau
发明人： Semyon Sherstinsky , Charles C. Harris , Mei Chang , Dale R. Du Bois , James F. Roberts , Susan Telford , Ronald L. Rose , Meng C. Tseng , Karl A. Littau
IPC分类号： C23C16/04 , C23C16/44 , C23C16/455 , C23C16/458 , H01L21/687 , C23C16/00
CPC分类号： C23C16/45521 , C23C16/042 , C23C16/4585 , H01L21/68721 , H01L21/68735
摘要： A clamping ring having a downwardly extending finger that mates with a pocket in the periphery of a susceptor for supporting a wafer in a chemical vapor deposition chamber, provides alignment of the clamping ring, the wafer and the susceptor. A source of inert gas connected to the pocket provides a positive pressure in the pocket that prevents reactive gas in the chamber from reaching the edge and backside of the wafer. A source of vacuum connected to the susceptor support surface ensures good contact between the wafer and the susceptor.The clamping ring also has a lip extending over the top surface of the wafer having a rear surface that has a negative angle with respect to the upper surface of the clamping ring, providing a knife edge seal to the wafer, reducing the area of contact between the clamping ring and the wafer and providing a reduced area of thermal contact between the clamping ring and the wafer.
摘要翻译：具有向下延伸的指状物的夹紧环，其与基座的周边中的口相配合，用于在化学气相沉积室中支撑晶片，提供夹紧环，晶片和基座的对准。连接到口袋的惰性气体源在口袋中提供正压力，防止腔室中的反应性气体到达晶片的边缘和背面。连接到基座支撑表面的真空源确保了晶片和基座之间良好的接触。夹紧环还具有在晶片的顶表面上延伸的唇缘，其具有相对于夹紧环的上表面具有负角度的后表面，为晶片提供刀刃密封，从而减小了夹紧环和晶片，并且在夹紧环和晶片之间提供减小的热接触面积。

97. 发明授权

US5250467A Method for forming low resistance and low defect density tungsten contacts to silicon semiconductor wafer 失效
标题翻译：用于形成低电阻和低缺陷密度钨触点到硅半导体晶片的方法
公开(公告)号：US5250467A
公开(公告)日：1993-10-05
申请号：US677681
申请日：1991-03-29
申请人： Sasson Somekh , Jaim Nulman , Mei Chang
发明人： Sasson Somekh , Jaim Nulman , Mei Chang
IPC分类号： H01L21/28 , H01L21/285 , H01L21/768 , H01L23/532 , H01L21/44 , H01L21/48
CPC分类号： H01L21/76876 , H01L21/28518 , H01L21/76843 , H01L21/76855 , H01L21/76856 , H01L21/76877 , H01L23/53257 , H01L2924/0002 , Y10S438/907
摘要： An improved process is described for forming planar tungsten-filled contacts to a silicon substrate in contact openings through an insulating layer which provides for the formation of titanium silicide in and on the silicon surface at the bottom of the contact openings to provide low resistance silicide interconnections between the silicon substrate and the tungsten. A titanium nitride layer is formed over the titanium silicide and on the surfaces of the insulation layer, including the top surface of the insulation layer and the sidewall surfaces of the contact openings through the insulating layer. This titanium nitride layer provides a nucleation layer which permits a good bond to form from the tungsten through the titanium nitride and titanium silicide in the contact openings to the silicon substrate; and from the tungsten through the titanium nitride layer to the insulator material such as silicon dioxide (SO.sub.2), resulting in the formation of low resistance and low defect density contacts.

98. 发明授权

US4962049A Process for the plasma treatment of the backside of a semiconductor wafer 失效
标题翻译：用于等离子体处理半导体晶片背面的工艺
公开(公告)号：US4962049A
公开(公告)日：1990-10-09
申请号：US337607
申请日：1989-04-13
申请人： Mei Chang , David Cheng
发明人： Mei Chang , David Cheng
IPC分类号： C23C8/36 , C23C14/02 , C23C16/02 , H01L21/00 , H01L21/306 , H01L21/316 , H01L21/687
CPC分类号： H01L21/67069 , C23C14/022 , C23C16/0245 , C23C8/36 , H01L21/02046 , H01L21/02238 , H01L21/02252 , H01L21/31612 , H01L21/6875 , Y10S438/906 , Y10S438/928
摘要： A process is disclosed for the treatment of the backside or back surface of a semiconductor wafer such as a silicon wafer. By spacing the back side of a semiconductor wafer a predetermined distance from a cathode in a vacuum chamber and controlling the rf power and the pressure, a confined plasma may be used both to clean the back side of the wafer to remove impurities, including moisture and other occluded gases; as well as to deposit a layer of oxide on the back surface of the wafer to inhibit subsequent deposition of poorly adherent materials on the back side of the wafer which might otherwise flake off during processing of the front side of the wafer to form integrated circuits thereon.

99. 发明授权

US4854263A Inlet manifold and methods for increasing gas dissociation and for PECVD of dielectric films 失效
标题翻译：用于增加气体离解和介电膜PECVD的入口歧管和方法
公开(公告)号：US4854263A
公开(公告)日：1989-08-08
申请号：US85424
申请日：1987-08-14
申请人： Mei Chang , David N. K. Wang , John M. White , Dan Maydan
发明人： Mei Chang , David N. K. Wang , John M. White , Dan Maydan
IPC分类号： C23C16/50 , C23C16/34 , C23C16/44 , C23C16/455 , C23C16/509
CPC分类号： C23C16/45565 , C23C16/345 , C23C16/455 , C23C16/5096
摘要： An inlet gas manifold for a vacuum deposition chamber incorporates inlet apertures which increase in diameter or cross-section transverse to the direction of gas flow. The aperture configuration increases the dissociation gases such as nitrogen and, thus increases the rate of silicon nitride deposition provided by nitrogen gas chemistry, without requiring the use of reactants such as ammonia. While one could use ammonia in the deposition gas chemistry if desired, the process provides the option of completely eliminating ammonia. The inlet manifold containing the increasing-diameter gas inlet holes provides enhanced control of the process and the deposited film, and is also useful for forming other dielectrics such as silicon oxide and silicon oxynitride. In particular, silicon oxynitride films are characterized by low hydrogen content and by compositional uniformity.

100. 发明授权

US4842683A Magnetic field-enhanced plasma etch reactor 失效
标题翻译：磁场增强等离子体蚀刻反应器
公开(公告)号：US4842683A
公开(公告)日：1989-06-27
申请号：US185215
申请日：1988-04-25
申请人： David Cheng , Dan Maydan , Sasson Somekh , Kenneth R. Stalder , Dana L. Andrews , Mei Chang , John M. White , Jerry Y. K. Wong , Vladimir J. Zeitlin , David N. Wang
发明人： David Cheng , Dan Maydan , Sasson Somekh , Kenneth R. Stalder , Dana L. Andrews , Mei Chang , John M. White , Jerry Y. K. Wong , Vladimir J. Zeitlin , David N. Wang
IPC分类号： H05H1/46 , B01J3/02 , H01J37/32 , H01L21/00 , H01L21/302 , H01L21/3065
CPC分类号： H01L21/67069 , H01J37/32431 , H01J37/32477 , H01J37/32623 , H01J37/32743 , H01J37/32788 , H01J37/32862
摘要： A magnetic field enhanced single wafer plasma etch reactor is disclosed. The features of the reactor include an electrically-controlled stepped magnetic field for providing high rate uniform etching at high pressures; temperature controlled reactor surfaces including heated anode surfaces (walls and gas manifold) and a cooled wafer supporting cathode; and a unitary wafer exchange mechanism comprising wafer lift pins which extend through the pedestal and a wafer clamp ring. The lift pins and clamp ring are moved vertically by a one-axis lift mechanism to accept the wafer from a cooperating external robot blade, clamp the wafer to the pedestal and return the wafer to the blade. The electrode cooling combines water cooling for the body of the electrode and a thermal conductivity-enhancing gas parallel-bowed interface between the wafer and electrode for keeping the wafer surface cooled despite the high power densities applied to the electrode. A gas feed-through device applies the cooling gas to the RF powered electrode without breakdown of the gas. Protective coatings/layers of materials such as quartz are provided for surfaces such as the clamp ring and gas manifold. The combination of these features provides a wide pressure regime, high etch rate, high throughput single wafer etcher which provides uniformity, directionality and selectivity at high gas pressures, operates cleanly and incorporates in-situ self-cleaning capability.
摘要翻译：公开了一种磁场增强型单晶片等离子体蚀刻反应器。反应器的特征包括用于在高压下提供高速均匀蚀刻的电控步进磁场; 温度控制的反应器表面包括加热的阳极表面（壁和气体歧管）和冷却的晶片支撑阴极; 以及包括延伸穿过基座的晶片提升销和晶片夹紧环的整体晶片交换机构。提升销和夹紧环通过单轴提升机构垂直移动，以从配合的外部机器人刀片接收晶片，将晶片夹紧到基座并将晶片返回到刀片。电极冷却结合了用于电极体的水冷却和晶片和电极之间的热导率增强气体平行弓形界面，用于保持晶片表面冷却，尽管施加到电极的高功率密度。气体馈通装置将冷却气体施加到RF供电的电极，而不会破坏气体。为诸如夹紧环和气体歧管的表面提供保护涂层/诸如石英的材料层。这些特征的组合提供了广泛的压力方案，高蚀刻速率，高通量单晶硅蚀刻器，其在高气体压力下提供均匀性，方向性和选择性，干净地操作并且并入现场自清洁能力。

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