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    • 91. 发明申请
    • METHOD FOR MANUFACTURING MEDIUM ON WHICH INFORMATION IS RECORDED IN PIT PATTERN
    • 在PIT PATTERN中记录信息的方法
    • US20110222391A1
    • 2011-09-15
    • US12673565
    • 2008-05-16
    • Yoshihisa UsamiTetsuya Watanabe
    • Yoshihisa UsamiTetsuya Watanabe
    • C23F1/02G11B7/26
    • G11B7/261B41M5/24Y10T428/21
    • A method by which depressions and projections (pit pattern) can be formed directly and easily in a substrate made of inorganic material is provided. A method for forming a medium on which information is recorded in a pit pattern comprises the steps of: forming a recording material layer (21) over a substrate (11) made of inorganic material wherein the recording material layer is of a thermally deformable heat mode recording material; forming a plurality of holes 15 by application of condensed light to the recording material layer (21); and forming a plurality of pits (16) in the substrate wherein the plurality of pits corresponding to the plurality of holes (15) are etched by using as a mask the recording material layer (21) in which the plurality of holes are formed.
    • 提供了在由无机材料制成的基板中可以直接且容易地形成凹陷和突起(凹坑图案)的方法。 用于形成以凹坑图形记录信息的介质的方法包括以下步骤:在由无机材料制成的基板(11)上形成记录材料层(21),其中记录材料层是可热变形的热模式 录音材料; 通过向记录材料层(21)施加聚光来形成多个孔15; 以及在所述基板中形成多个凹坑(16),其中通过使用其中形成有所述多个孔的记录材料层(21)作为掩模蚀刻对应于所述多个孔(15)的多个凹坑。
    • 92. 发明申请
    • Image forming device and image forming method
    • 图像形成装置和图像形成方法
    • US20100165398A1
    • 2010-07-01
    • US12654225
    • 2009-12-15
    • Tetsuya Watanabe
    • Tetsuya Watanabe
    • G06F15/00
    • H04N1/2307H04N1/233H04N1/2361
    • An image forming device includes a first development unit configured to form a first image on a recording medium with a first developer, a second development unit configured to form a second image on the recording medium with at least one of a plurality of second developers that are different from the first developer, and a print control unit configured to select the at least one of the plurality of second developers for forming the second image. The second developers are transparent developers, and the second image is a transparent image
    • 图像形成装置包括:第一显影单元,被配置为在第一显影剂的记录介质上形成第一图像;第二显影单元,被配置为在记录介质上形成第二图像,所述第二显影单元具有多个第二显影剂中的至少一个, 不同于第一显影剂的打印控制单元和被配置为选择用于形成第二图像的多个第二显影器中的至少一个的打印控制单元。 第二个开发者是透明的开发者,第二个图像是透明的图像
    • 94. 发明授权
    • Semiconductor device
    • 半导体器件
    • US07649238B2
    • 2010-01-19
    • US12108369
    • 2008-04-23
    • Tetsuya WatanabeTakashi Ipposhi
    • Tetsuya WatanabeTakashi Ipposhi
    • H01L29/06H01L27/12
    • H01L21/84H01L27/1203H01L29/78615
    • In a PMOS transistor, the source-drain region is divided into four parts along the gate width and has an arrangement of four independent source regions and an arrangement of four independent drain regions. A partial trench isolation insulating film is arranged in contact with the whole of the opposed surfaces between the four source regions in such a manner that the channel region formed under the gate electrode is divided across the channel length. A body-tied region containing N-type impurities relatively high in concentration is arranged in contact with the side surface of the source region opposite to the gate electrode, and the potential of the body region is fixed through the well region from the body-tied region.
    • 在PMOS晶体管中,源极 - 漏极区域沿着栅极宽度分成四个部分,并且具有四个独立源极区域和四个独立漏极区域的布置的布置。 部分沟槽隔离绝缘膜被布置成与四个源极区域之间的整个相对表面接触,使得形成在栅电极下方的沟道区域跨越沟道长度被划分。 包含浓度相对较高的N型杂质的身体绑扎区域与源极区域与栅电极相对的侧表面接触,并且身体区域的电位通过井身区域从身体绑定 地区。
    • 98. 发明授权
    • Semiconductor device
    • 半导体器件
    • US07391095B2
    • 2008-06-24
    • US11555923
    • 2006-11-02
    • Tetsuya WatanabeTakashi Ipposhi
    • Tetsuya WatanabeTakashi Ipposhi
    • H01L29/06H01L27/12
    • H01L21/84H01L27/1203H01L29/78615
    • In a PMOS transistor, the source-drain region is divided into four parts along the gate width and has an arrangement of four independent source regions and an arrangement of four independent drain regions. A partial trench isolation insulating film is arranged in contact with the whole of the opposed surfaces between the four source regions in such a manner that the channel region formed under the gate electrode is divided across the channel length. A body-tied region containing N-type impurities relatively high in concentration is arranged in contact with the side surface of the source region opposite to the gate electrode, and the potential of the body region is fixed through the well region from the body-tied region.
    • 在PMOS晶体管中,源极 - 漏极区域沿着栅极宽度分成四个部分,并且具有四个独立源极区域和四个独立漏极区域的布置的布置。 部分沟槽隔离绝缘膜被布置成与四个源极区域之间的整个相对表面接触,使得形成在栅电极下方的沟道区域跨越沟道长度被划分。 包含浓度相对较高的N型杂质的身体绑扎区域与源极区域与栅电极相对的侧表面接触,并且身体区域的电位通过井身区域从身体绑定 地区。