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    • 92. 发明授权
    • Protected encapsulation of catalytic layer for electroless copper
interconnect
    • 用于无电铜互连的催化层的保护封装
    • US5824599A
    • 1998-10-20
    • US587264
    • 1996-01-16
    • Yosef Schacham-DiamandValery M. DubinChiu H. TingBin ZhaoPrahalad K. VasudevMelvin Desilva
    • Yosef Schacham-DiamandValery M. DubinChiu H. TingBin ZhaoPrahalad K. VasudevMelvin Desilva
    • H01L21/768H01L21/44
    • H01L21/76834H01L21/76838H01L21/76843H01L21/76874H01L21/76858Y10S977/712Y10S977/81Y10S977/888Y10S977/89
    • A method for utilizing electroless copper deposition to form interconnects on a semiconductor. Once a via or a trench is formed in a dielectric layer, a titanium nitride (TiN) or tantalum (Ta) barrier layer is deposited. Then, a catalytic copper seed layer is conformally blanket deposited in vacuum over the barrier layer. Next, without breaking the vacuum, an aluminum protective layer is deposited onto the catalytic layer to encapsulate and protect the catalytic layer from oxidizing. An electroless deposition technique is then used to auto-catalytically deposit copper on the catalytic layer. The electroless deposition solution dissolves the overlying protective layer to expose the surface of the underlying catalytic layer. The electroless copper deposition occurs on this catalytic surface, and continues until the via/trench is filled. Subsequently, the copper and barrier material are polished by an application of chemical-mechanical polishing (CMP) to remove excess copper and barrier material from the surface, so that the only copper and barrier material remaining are in the via/trench openings. Then an overlying silicon nitride (SiN) layer is formed above the exposed copper in order to form a dielectric barrier layer. The copper interconnect is fully encapsulated from the adjacent material by the TiN (or Ta) barrier layer and the overlying SiN layer.
    • 一种利用无电铜沉积在半导体上形成互连的方法。 一旦在电介质层中形成通孔或沟槽,则沉积氮化钛(TiN)或钽(Ta)阻挡层。 然后,催化铜籽晶层在真空中在阻挡层上共形地覆盖。 接下来,在不破坏真空的情况下,将铝保护层沉积到催化剂层上以包封并保护催化剂层免于氧化。 然后使用无电沉积技术在催化剂层上自动催化沉积铜。 无电沉积溶液溶解上覆的保护层以暴露下面的催化剂层的表面。 无电铜沉积发生在该催化剂表面上,并持续直到通孔/沟槽被填充。 随后,通过施加化学机械抛光(CMP)来抛光铜和阻挡材料,以从表面去除多余的铜和阻挡材料,使得剩余的唯一的铜和阻挡材料在通孔/沟槽开口中。 然后,在暴露的铜上方形成覆盖氮化硅(SiN)层,以形成电介质阻挡层。 铜互连通过TiN(或Ta)阻挡层和覆盖的SiN层从相邻材料完全封装。
    • 97. 发明授权
    • Frequency synthesis and synchronization for LED drivers
    • LED驱动器的频率合成和同步
    • US08373643B2
    • 2013-02-12
    • US12244796
    • 2008-10-03
    • Bin ZhaoAndrew M. KameyaVictor K. Lee
    • Bin ZhaoAndrew M. KameyaVictor K. Lee
    • G09G3/36
    • G09G3/3406G09G2320/064
    • A PWM generation module generates a PWM data signal used to control a light emitting diode (LED) driver for one or more strings of LEDs of a display device. The PWM data signal is synchronized with the frame boundaries of the video content being displayed. The PWM generation module can configure the PWM data signal such that a new PWM cycle is initiated at the start of each successive frame, and further whereby those PWM cycles that would be prematurely terminated at frame boundaries are instead driven at a constant reference level until the frame boundary. With this configuration, a substantially linear average light intensity can be achieved across frames, thereby reducing or eliminating display distortion that is often present in other PWM cycle synchronization techniques. The PWM generation module can use a self-learning process to make adjustments to the expected number of completeable PWM cycles per frame in response to dynamic changes in the frame rate, PWM frequency, or other related display parameters.
    • PWM生成模块生成用于控制显示装置的一个或多个LED串的发光二极管(LED)驱动器的PWM数据信号。 PWM数据信号与正在显示的视频内容的帧边界同步。 PWM生成模块可以配置PWM数据信号,使得在每个连续帧的开始处启动新的PWM周期,并且进一步地,将在帧边界处过早终止的那些PWM周期以恒定的参考电平驱动直到 帧边界。 利用这种配置,可以跨帧实现基本线性的平均光强度,从而减少或消除其他PWM周期同步技术中经常出现的显示失真。 PWM生成模块可以使用自学习过程来响应于帧速率,PWM频率或其他相关显示参数的动态变化来调整每帧的可完成PWM周期的预期数量。