专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

91. 发明授权

US06255036B1 Resist pattern forming method using anti-reflective layer, resist pattern formed, and method of etching using resist pattern and product formed 有权
标题翻译：使用抗反射层的抗蚀剂图案形成方法，形成的抗蚀剂图案，以及形成的抗蚀剂图案和产品的蚀刻方法
公开(公告)号：US06255036B1
公开(公告)日：2001-07-03
申请号：US09664554
申请日：2000-09-18
申请人： Toshihiko Tanaka , Shoichi Uchino , Naoko Asai
发明人： Toshihiko Tanaka , Shoichi Uchino , Naoko Asai
IPC分类号： G03C500
CPC分类号： G03F7/091 , Y10S430/151
摘要： Disclosed are methods for forming a resist pattern which solve a problem (dimensional precision degradation) caused by halation and interference phenomena due to reflected light from the substrate, and which are fine and have high precision even with substrates having high reflectivity or substrates having a transparent film or substrates with an uneven surface. A first method forms between the substrate and resist film an anti-reflective film whose photoabsorbance of the exposure light is greater on the substrate surface side than on the resist surface side. A second method forms between the substrate and resist film a two-layer anti-reflective film made up of an upper-layer film which is an interference film for the exposure light and a lower-layer film which has higher exposure light absorbance than the upper-layer film and functions as a light shielding film. A third method forms between the substrate and resist film a two-layer anti-reflective film consisting of a lower-layer film that reflects the exposure light and an upper-layer film that is an interference film for the exposure light. A very high anti-reflection effect can be obtained without aspect ratio problems during the process of forming the anti-reflective film and without being influenced by the kind of substrate including those having a transparent film. With these methods, it is possible to form a fine and highly precise resist pattern. These methods can be used to form patterned resist films to etch object films, e.g., in forming microcircuits and/or gates (and word lines) of semiconductor devices.
摘要翻译：公开了形成抗蚀剂图案的方法，其解决了由于来自基板的反射光引起的由于偏光和干涉现象引起的问题（尺寸精度降低），即使具有高反射率的基板或具有透明度的基板也是精细且具有高精度膜或具有不平坦表面的基底。在基板和抗蚀剂膜之间形成第一种方法，其中在基板表面侧的曝光光的光吸收性大于在抗蚀剂表面侧上的抗反射膜。在基板和抗蚀剂膜之间形成由作为曝光用的干涉膜的上层膜构成的双层抗反射膜的第二种方法和具有比上层的曝光吸光度高的下层膜并且用作遮光膜。在基板和抗蚀剂膜之间形成由反射曝光光的下层膜构成的两层抗反射膜和作为曝光用光的干涉膜的上层膜的第三种方法。在形成抗反射膜的过程中可以获得非常高的抗反射效果，而不受包括具有透明膜的基板的种类的影响。利用这些方法，可以形成精细且高精度的抗蚀剂图案。这些方法可以用于形成图案化的抗蚀剂膜以蚀刻对象膜，例如在形成半导体器件的微电路和/或栅极（和字线）中。

92. 发明授权

US6154312A Objective lens switching device 有权
标题翻译：物镜切换装置
公开(公告)号：US6154312A
公开(公告)日：2000-11-28
申请号：US158471
申请日：1998-09-22
申请人： Yasuteru Takahama , Mitsuhiko Saito , Toshihiko Tanaka
发明人： Yasuteru Takahama , Mitsuhiko Saito , Toshihiko Tanaka
IPC分类号： G02B21/24 , G02B21/00
CPC分类号： G02B21/248
摘要： An objective lens switching device of the present invention is a device in which assembly and adjustment in order to correctly position each objective lens on an optical axis are easy and a switching action can quickly be performed with certainty without receiving an influence of a mounting condition of objective lenses or a change in the revolver over time in use. A CPU reads an angular displacement from an angle sensor from a revolution position of a turret outside a detection range of an engagement sensor and issues a command of start braking to a driver when the angular displacement reaches a predetermined given angle. A revolution position of the turret at which the CPU starts the braking is correctly set all the time since the detection range of the engagement sensor and an engagement position of the turret are correctly adjusted.
摘要翻译：本发明的物镜切换装置是将各物镜在光轴上正确地进行组装和调整的装置，容易地进行切换动作，而不会受到安装条件的影响物镜或随着时间推移使用的左轮手枪的变化。 CPU从角度传感器从接合传感器的检测范围之外的转台的旋转位置读取角位移，并且当角位移达到预定的给定角度时向驾驶员发出开始制动的命令。由于接合传感器的检测范围和转台的接合位置被正确调整，所以始终正确地设置CPU开始制动的转塔的转动位置。

93. 发明授权

US6060338A Method of making a field effect transistor 失效
标题翻译：制作场效应晶体管的方法
公开(公告)号：US6060338A
公开(公告)日：2000-05-09
申请号：US228936
申请日：1999-01-12
申请人： Toshihiko Tanaka , Syuji Doi , Hiroshi Koezuka , Akira Tsumura , Hiroyuki Fuchigami
发明人： Toshihiko Tanaka , Syuji Doi , Hiroshi Koezuka , Akira Tsumura , Hiroyuki Fuchigami
IPC分类号： G02F1/1333 , G02F1/1368 , H01L27/28 , H01L51/30 , H01L21/335
CPC分类号： H01L51/0036 , G02F1/1368 , H01L27/283 , H01L51/002 , H01L51/0035 , H01L51/0038 , H01L51/0508 , H01L51/0545 , H01L51/0558 , G02F2001/133302 , H01L51/0015 , H01L51/0541
摘要： A method of fabricating a field effect transistor including forming a gate electrode on an electrically insulating substrate; forming an electrically insulating film on the substrate covering the gate electrode; forming source and drain electrodes on the electrically insulating film on opposite sides of the gate electrode; forming a semiconducting film of a .pi.-conjugated polymer on the source and drain electrodes and on the electrically insulating film between the source and drain electrodes.
摘要翻译：一种制造场效应晶体管的方法，包括在电绝缘基板上形成栅电极; 在覆盖栅电极的基板上形成电绝缘膜; 在栅电极的相对侧的电绝缘膜上形成源电极和漏电极; 在源极和漏极上以及在源电极和漏极之间的电绝缘膜上形成π共轭聚合物的半导体膜。

94. 发明授权

US5892244A Field effect transistor including .pi.conjugate polymer and liquid crystal display including the field effect transistor 失效
标题翻译：包括π共轭聚合物和包括场效应晶体管的液晶显示器的场效应晶体管
公开(公告)号：US5892244A
公开(公告)日：1999-04-06
申请号：US835634
申请日：1997-04-10
申请人： Toshihiko Tanaka , Syuji Doi , Hiroshi Koezuka , Akira Tsumura , Hiroyuki Fuchigami
发明人： Toshihiko Tanaka , Syuji Doi , Hiroshi Koezuka , Akira Tsumura , Hiroyuki Fuchigami
IPC分类号： G02F1/1333 , G02F1/1368 , H01L27/28 , H01L51/30 , H01L35/24
CPC分类号： H01L51/0036 , G02F1/1368 , H01L27/283 , H01L51/002 , H01L51/0035 , H01L51/0038 , H01L51/0508 , H01L51/0545 , H01L51/0558 , G02F2001/133302 , H01L51/0015 , H01L51/0541
摘要： The present invention relates to a field effect transistor (FET element) in which a .pi.-conjugated polymer film serving as a semiconductor layer is manufactured by first forming a .pi.-conjugated polymer precursor film using a .pi.-conjugated precursor which is soluble in a solvent and then changing the precursor polymer film to the .pi.-conjugated polymer film. A liquid crystal display apparatus uses the FET element as an active drive element. A large number of the FET elements can be manufactured on a large area substrate at the same time at lost cost and operate stably. A large current flow between the source and drain can be significantly modulated by a voltage applied to the gate of the FET element.
摘要翻译：本发明涉及一种场效应晶体管（FET元件），其中用作半导体层的π共轭聚合物膜通过首先使用可溶于溶剂的π共轭前体形成π共轭聚合物前体膜然后将前体聚合物膜改变为π共轭聚合物膜。液晶显示装置使用FET元件作为有源驱动元件。大量的FET元件可以在大面积基板上同时以损耗成本并且稳定地工作。可以通过施加到FET元件的栅极的电压来显着地调制源极和漏极之间的大电流。

95. 发明授权

US5880649A Multilayered frequency separator 失效
标题翻译：多层次分频器
公开(公告)号：US5880649A
公开(公告)日：1999-03-09
申请号：US805048
申请日：1997-02-24
申请人： Hiroyuki Tai , Tsuyoshi Taketa , Toshihiko Tanaka
发明人： Hiroyuki Tai , Tsuyoshi Taketa , Toshihiko Tanaka
IPC分类号： H01P1/213 , H01Q1/24 , H03H7/46
CPC分类号： H01Q1/241 , H01P1/2135
摘要： A multilayered frequency separator comprising a plurality of insulating layers, and having at least two notch circuits. The notch circuit is constituted by pattern electrodes formed on interfaces of each of the insulating layers which construct the multilayer structure, and comprises a capacitor component connected to an inductance component. The multilayered frequency separator is suitably used for branching the frequency bands for dual-band handy phone.
摘要翻译：一种多层频率分离器，包括多个绝缘层，并且具有至少两个陷波电路。陷波电路由形成在构成多层结构的每个绝缘层的界面上的图案电极构成，并且包括连接到电感部件的电容器部件。多层频率分离器适用于双频手机的频带分支。

96. 发明授权

US5760759A Liquid crystal display 失效
标题翻译：液晶显示器
公开(公告)号：US5760759A
公开(公告)日：1998-06-02
申请号：US553868
申请日：1995-11-06
申请人： Toshihiko Tanaka , Shoji Iwasaki , Masahiro Nakamura , Kouji Maeta , Jouji Yamada
发明人： Toshihiko Tanaka , Shoji Iwasaki , Masahiro Nakamura , Kouji Maeta , Jouji Yamada
IPC分类号： G09G3/36
CPC分类号： G09G3/3622 , G09G3/3696 , G09G2310/06 , G09G2330/02
摘要： A driving power supply and a driving circuit are provided which are suitable for use in a high resolution matrix liquid crystal display. A power source circuit generates two selecting potentials and an intermediate potential between the selecting potentials to be supplied to scanning electrodes through a scanning circuit, two potentials close to the intermediate potential to be supplied to signal electrodes through a signal circuit, and potentials for driving the scanning circuit and the signal circuit. A receiving circuit controls the scanning circuit and the signal circuit based on control signals and an image signal and monitors the potential of the power supplied to the liquid crystal display to start the potential generation by the power source circuit when the potential has sufficiently increased.
摘要翻译：提供适用于高分辨率矩阵液晶显示器的驱动电源和驱动电路。电源电路通过扫描电路产生两个选择电位和供给扫描电极的选择电位之间的中间电位，接近通过信号电路提供给信号电极的中间电位的两个电位和用于驱动扫描电路和信号电路。接收电路基于控制信号和图像信号来控制扫描电路和信号电路，并且当电位充分增加时，监视供给液晶显示器的电力的电位，以通过电源电路开始电位产生。

97. 发明授权

US5733712A Resist pattern forming method using anti-reflective layer, resist pattern formed, and method of etching using resist pattern and product formed 失效
标题翻译：使用抗反射层的抗蚀剂图案形成方法，形成的抗蚀剂图案，以及形成的抗蚀剂图案和产品的蚀刻方法
公开(公告)号：US5733712A
公开(公告)日：1998-03-31
申请号：US601361
申请日：1996-02-16
申请人： Toshihiko Tanaka , Shoichi Uchino , Naoko Asai
发明人： Toshihiko Tanaka , Shoichi Uchino , Naoko Asai
IPC分类号： G03F7/09 , G03C1/825
CPC分类号： G03F7/091 , Y10S430/151
摘要： A first method forms between the substrate and resist film an anti-reflective film whose photoabsorbance of the exposure light is greater on the substrate surface side than on the resist surface side. A second method forms between the substrate and resist film a two-layer anti-reflective film made up of an upper-layer film which is an interference film for the exposure light and a lower-layer film which has higher exposure light absorbance than the upper-layer film and functions as a light shielding film. A third method forms between the substrate and resist film a two-layer anti-reflective film consisting of a lower-layer film that reflects the exposure light and an upper-layer film that is an interference film for the exposure light. A very high anti-reflection effect can be obtained without aspect ratio problems during the process of forming the anti-reflective film and without being influenced by the kind of substrate including those having a transparent film. With these methods, it is possible to form a fine and highly precise resist pattern. These methods can be used to form patterned resist films to etch object films, e.g., in forming microcircuits and/or gates (and word lines) of semiconductor devices.
摘要翻译：在基板和抗蚀剂膜之间形成第一种方法，其中在基板表面侧的曝光光的光吸收性大于在抗蚀剂表面侧上的抗反射膜。在基板和抗蚀剂膜之间形成由作为曝光用的干涉膜的上层膜构成的双层抗反射膜的第二种方法和具有比上层的曝光吸光度高的下层膜并且用作遮光膜。在基板和抗蚀剂膜之间形成由反射曝光光的下层膜构成的两层抗反射膜和作为曝光用光的干涉膜的上层膜的第三种方法。在形成抗反射膜的过程中可以获得非常高的抗反射效果，而不受包括具有透明膜的基板的种类的影响。利用这些方法，可以形成精细且高精度的抗蚀剂图案。这些方法可以用于形成图案化的抗蚀剂膜以蚀刻对象膜，例如在形成半导体器件的微电路和/或栅极（和字线）中。

98. 发明授权

US5665836A Method of preparing vinyl chloride polymers and copolymers of improved antistatic performance 失效
标题翻译：制备氯乙烯聚合物的方法和提高抗静电性能的共聚物
公开(公告)号：US5665836A
公开(公告)日：1997-09-09
申请号：US510938
申请日：1995-08-03
申请人： Toshihiko Tanaka , Hiroshi Minamide
发明人： Toshihiko Tanaka , Hiroshi Minamide
IPC分类号： C08F2/00 , C08F6/24
CPC分类号： C08F6/24
摘要： A method of producing suspension polymerized vinyl chloride polymers or copolymers of improved flowability by polymerizing vinyl chloride monomers alone, or in a mixture with other monomers, in an aqueous medium, to form a slurry of polymer suspended in said aqueous medium. After removing unreacted monomers, a polyhydric alcohol is added to the slurry containing the suspension polymerized polymer or to a product obtained after the dewatering of the slurry, in an amount of 0.001 to 0.5 parts by weight based on 100 parts by weight of the vinyl chloride polymer or copolymer suspended in the slurry.
摘要翻译：通过在水性介质中单独聚合氯乙烯单体或与其它单体的混合物来生产悬浮聚合氯乙烯聚合物或改进流动性的共聚物的方法，以形成悬浮在所述水性介质中的聚合物浆料。除去未反应的单体之后，将含有悬浮聚合聚合物的浆料或浆料脱水后得到的产物加入到多元醇中，相对于100重量份的氯乙烯为0.001〜0.5重量份悬浮在浆料中的聚合物或共聚物。

99. 发明授权

US5326672A Resist patterns and method of forming resist patterns 失效
标题翻译：抗蚀剂图案和形成抗蚀剂图案的方法
公开(公告)号：US5326672A
公开(公告)日：1994-07-05
申请号：US964715
申请日：1992-10-22
申请人： Toshihiko Tanaka , Mitsuaki Morigami , Iwao Higashikawa , Takeo Watanabe
发明人： Toshihiko Tanaka , Mitsuaki Morigami , Iwao Higashikawa , Takeo Watanabe
IPC分类号： G03F7/30 , G03C5/00
CPC分类号： G03F7/30
摘要： In accordance with a proposed resist pattern forming method, contact angles between the surface of a resist and a rinse is adjusted within a predetermined range, a volatil surfactant which does not remain by drying is mixed in the rinse so as to reduce a surface tension, the rinse is dried under a critical condition of the rinse in order not to cause the surface tension to exert. The occurrence of an attractive force between the resist patterns may be thereby weakened or nullified, so that falling of the patterns can be effectively prevented which very often happened at forming fine resist patterns or resist patterns of high aspect. On the other hand, depending upon structure of said resist pattern, it is possible to effectively prevent outermost main patterns of gathering resist patterns from falling down. By providing such effects, yielding of products are increased. Further, the present invention may be also applied to a lithography illumination sources of which are light, electron, X-ray, ion beam, etc.
摘要翻译：根据所提出的抗蚀剂图案形成方法，将抗蚀剂表面和冲洗液之间的接触角调节到预定范围内，将不保持干燥的挥发性表面活性剂在冲洗液中混合以降低表面张力，冲洗液在冲洗的临界条件下干燥，以免引起表面张力。因此抗蚀剂图案之间的吸引力的发生可能被削弱或消失，从而可以有效地防止图形的下降，这在形成精细抗蚀剂图案或高方面的抗蚀剂图案时经常发生。另一方面，根据所述抗蚀剂图案的结构，可以有效地防止聚集抗蚀剂图案的最外面的主要图案掉落。通过提供这种效果，产品的产量增加。此外，本发明还可以应用于光，电子，X射线，离子束等的光刻照明源

100. 发明授权

US4988608A Method for forming fine pattern of conjugated polymer film 失效
标题翻译：用于形成共轭聚合物薄膜精细图案的方法
公开(公告)号：US4988608A
公开(公告)日：1991-01-29
申请号：US431178
申请日：1989-11-03
申请人： Toshihiko Tanaka , Shuji Doi
发明人： Toshihiko Tanaka , Shuji Doi
IPC分类号： G03F7/038 , H01L21/027
CPC分类号： G03F7/038 , Y10S430/115
摘要： Disclosed is a method for forming a fine pattern of a conjugated polymer according to which the fine pattern can be formed even by using a high pressure mercury lamp as a light source for irradiation. This method comprises irradiating a coat containing a precursor for conjugated polymers which has a recurring unit represented by the formula (1): ##STR1## wherein R.sub.1 represents ##STR2## ps in which R.sub.3 and R.sub.4 each represents a hydrogen atom or an alkyl or alkoxy group of 1-5 carbon atoms, R.sub.5 represents a hydrocarbon group of 1-5 carbon atoms and m is 1 or 2; and R.sub.2 represents a hydrogen atom or a hydrocarbon group of 1-10 carbon atoms with a light of 200-500 nm in wavelength in pattern form and then dissolving and removing the polymer of unirradiated portion. It is preferred to heat treat the resulting fine pattern. Furthermore, the resulting pattern can have electrical conductivity by doping it with an electron donating or accepting dopant.
摘要翻译：公开了一种用于形成共轭聚合物的精细图案的方法，通过使用高压汞灯作为照射光源，可以形成精细图案。该方法包括：照射含有共轭聚合物前体的涂层，该共聚物具有式（1）表示的重复单元：其中R 1表示其中R 3和R 4各自表示氢原子或 1-5个碳原子的烷基或烷氧基，R5代表1-5个碳原子的烃基，m是1或2; R2表示氢原子或1-10个碳原子的烃基，其波长为200-500nm的图案形式，然后溶解并除去未照射部分的聚合物。优选热处理所得到的精细图案。此外，所得到的图案可以通过用给电子或接受掺杂剂掺杂而具有导电性。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式