专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

91. 发明授权

US08829608B2 Semiconductor device 有权
标题翻译：半导体器件
公开(公告)号：US08829608B2
公开(公告)日：2014-09-09
申请号：US13051987
申请日：2011-03-18
申请人： Wataru Saito , Syotaro Ono , Shunji Taniuchi , Miho Watanabe , Hiroaki Yamashita
发明人： Wataru Saito , Syotaro Ono , Shunji Taniuchi , Miho Watanabe , Hiroaki Yamashita
IPC分类号： H01L29/78
CPC分类号： H01L29/7813 , H01L29/0865 , H01L29/0878 , H01L29/1095 , H01L29/407 , H01L29/42372 , H01L29/66734
摘要： According to one embodiment, a semiconductor device includes a first semiconductor layer of a first conductivity type, a second semiconductor layer of the first conductivity type, a third semiconductor layer of a second conductivity type, a fourth semiconductor layer of the second conductivity type, a fifth semiconductor layer of the first conductivity type, a control electrode, a first main electrode, a second main electrode, and a sixth semiconductor layer of the first conductivity type. The second semiconductor layer and the third semiconductor layer are alternately provided on the first semiconductor layer in a direction substantially parallel to a major surface of the first semiconductor layer. The fourth semiconductor layer is provided on the second semiconductor layer and the third semiconductor layer. The fifth semiconductor layer is selectively provided on a surface of the fourth semiconductor layer. The control electrode is provided in a trench via an insulating film. The trench penetrates through the fourth semiconductor layer from a surface of the fifth semiconductor layer and is in contact with the second semiconductor layer. The first main electrode is connected to the first semiconductor layer. The second main electrode is connected to the fourth semiconductor layer and the fifth semiconductor layer. The sixth semiconductor layer is provided between the fourth semiconductor layer and the second semiconductor layer. An impurity concentration of the sixth semiconductor layer is higher than an impurity concentration of the second semiconductor layer.
摘要翻译：根据一个实施例，半导体器件包括第一导电类型的第一半导体层，第一导电类型的第二半导体层，第二导电类型的第三半导体层，第二导电类型的第四半导体层，第一导电类型的第五半导体层，第一导电类型的控制电极，第一主电极，第二主电极和第六半导体层。第二半导体层和第三半导体层在与第一半导体层的主表面大致平行的方向上交替地设置在第一半导体层上。第四半导体层设置在第二半导体层和第三半导体层上。第五半导体层选择性地设置在第四半导体层的表面上。控制电极通过绝缘膜设置在沟槽中。沟槽从第五半导体层的表面穿过第四半导体层并且与第二半导体层接触。第一主电极连接到第一半导体层。第二主电极连接到第四半导体层和第五半导体层。第六半导体层设置在第四半导体层和第二半导体层之间。第六半导体层的杂质浓度高于第二半导体层的杂质浓度。

92. 发明授权

US08610210B2 Power semiconductor device and method for manufacturing same 失效
标题翻译：功率半导体器件及其制造方法
公开(公告)号：US08610210B2
公开(公告)日：2013-12-17
申请号：US12840201
申请日：2010-07-20
申请人： Hiroshi Ohta , Yasuto Sumi , Kiyoshi Kimura , Wataru Sekine , Wataru Saito , Syotaro Ono , Munehisa Yabuzaki , Nana Hatano , Miho Watanabe
发明人： Hiroshi Ohta , Yasuto Sumi , Kiyoshi Kimura , Wataru Sekine , Wataru Saito , Syotaro Ono , Munehisa Yabuzaki , Nana Hatano , Miho Watanabe
IPC分类号： H01L29/66
CPC分类号： H01L29/66712 , H01L29/0619 , H01L29/0634 , H01L29/0638 , H01L29/0696 , H01L29/1095 , H01L29/402 , H01L29/7811
摘要： According to one embodiment, a power semiconductor device includes a first semiconductor layer, and first, second and third semiconductor regions. The first semiconductor layer has a first conductivity type. The first semiconductor regions have a second conductivity type, and are formed with periodicity in a lateral direction in a second semiconductor layer of the first conductivity type. The second semiconductor layer is provided on a major surface of the first semiconductor layer in a device portion with a main current path formed in a vertical direction generally perpendicular to the major surface and in a terminal portion provided around the device portion. The second semiconductor region has the first conductivity type and is a portion of the second semiconductor layer sandwiched between adjacent ones of the first semiconductor regions. The third semiconductor regions have the second conductivity type and are provided below the first semiconductor regions in the terminal portion.
摘要翻译：根据一个实施例，功率半导体器件包括第一半导体层以及第一，第二和第三半导体区域。第一半导体层具有第一导电类型。第一半导体区域具有第二导电类型，并且在第一导电类型的第二半导体层中在横向方向上形成周期性。第二半导体层设置在器件部分的第一半导体层的主表面上，其主电流通道形成在大体上垂直于主表面的垂直方向上，以及设置在器件部分周围的端子部分中。第二半导体区域具有第一导电类型，并且是夹在相邻的第一半导体区域中的第二半导体层的一部分。第三半导体区域具有第二导电类型并且设置在端子部分中的第一半导体区域的下方。

93. 发明授权

US08188521B2 Power semiconductor device 有权
标题翻译：功率半导体器件
公开(公告)号：US08188521B2
公开(公告)日：2012-05-29
申请号：US12728823
申请日：2010-03-22
申请人： Wataru Saito , Syotaro Ono , Munehisa Yabuzaki , Nana Hatano , Miho Watanabe
发明人： Wataru Saito , Syotaro Ono , Munehisa Yabuzaki , Nana Hatano , Miho Watanabe
IPC分类号： H01L29/739 , H01L29/78 , H01L29/08
CPC分类号： H01L29/7802 , H01L29/0619 , H01L29/0626 , H01L29/0634 , H01L29/0657 , H01L29/0696 , H01L29/0878 , H01L29/1095 , H01L29/4236 , H01L29/42368 , H01L29/4238 , H01L29/7808 , H01L29/7811 , H01L29/7828
摘要： A power semiconductor device has semiconductor layers, including: first layer of first type; second and third layers respectively of first and second types alternately on the first layer; fourth layers of second type on the third layers; fifth layers of first type on the fourth layer; sixth and seventh layers respectively of second and first types alternately on the second and third layers; a first electrode connected to the first layer; an insulation film on fourth, sixth, and seventh layers; a second electrode on fourth, sixth, and seventh layers via the insulation film; and a third electrode joined to fourth and fifth layers, wherein the sixth layers are connected to the fourth layers and one of the third layers between two fourth layers, and an impurity concentration of the third layers below the sixth layers is higher than that of the third layers under the fourth layers.
摘要翻译：功率半导体器件具有半导体层，包括：第一层第一层; 第一和第二类型的第二和第三层交替地在第一层上; 第三层第四层第四层; 第四层第五层第一层; 第二层和第三层的第六层和第七层交替地在第二层和第三层上; 连接到第一层的第一电极; 第四层，第六层和第七层的绝缘膜; 经由绝缘膜的第四，第六和第七层上的第二电极; 以及连接到第四和第五层的第三电极，其中第六层连接到第四层，第二层之间的第三层之间的第二层之间的第二层和第三层之间的第三层的杂质浓度高于第六层的第三层第四层第三层。

94. 发明申请

US20110074290A1 SELF-BALLASTED LAMP AND LIGHTING EQUIPMENT 失效
标题翻译：自封灯和照明设备
公开(公告)号：US20110074290A1
公开(公告)日：2011-03-31
申请号：US12885849
申请日：2010-09-20
申请人： MAKOTO SAKAI , Masao Segawa , Nubuo Shibano , Kiyoshi Nishimura , Kozo Ogawa , Masahiko Kamata , Toshiya Tanaka , Miho Watanabe , Shuhei Matsuda
发明人： MAKOTO SAKAI , Masao Segawa , Nubuo Shibano , Kiyoshi Nishimura , Kozo Ogawa , Masahiko Kamata , Toshiya Tanaka , Miho Watanabe , Shuhei Matsuda
IPC分类号： F21V23/00
CPC分类号： F21V29/507 , F21K9/232 , F21V3/04 , F21V29/506 , F21V29/89 , F21Y2107/00 , F21Y2107/40 , F21Y2115/10
摘要： A self-ballasted lamp includes: a base body; a light-emitting module and a globe which are provided at one end side of the base body; a cap provided at the other end side of the base body; and a lighting circuit housed between the base body and the cap. The light-emitting module has light-emitting portions each using a semiconductor light-emitting element, and a support portion projected at one end side of the base body, and the light-emitting portions are disposed at least on a circumferential surface of the support portion. A light-transmissive member is interposed between the light-emitting module and an inner face of the globe.
摘要翻译：自镇流灯包括：基体; 发光模块和球体，其设置在所述基体的一端侧; 设置在所述基体的另一端侧的盖; 以及容纳在基体和盖之间的照明电路。发光模块具有各自使用半导体发光元件的发光部和在基体的一端侧突出的支撑部，发光部至少设置在支撑体的周面上一部分。在发光模块和球体的内表面之间插入透光构件。

95. 发明申请

US20100123186A1 POWER SEMICONDUCTOR DEVICE 有权
标题翻译：功率半导体器件
公开(公告)号：US20100123186A1
公开(公告)日：2010-05-20
申请号：US12620045
申请日：2009-11-17
申请人： Hiroshi Ohta , Wataru Saito , Syotaro Ono , Munehisa Yabuzaki , Nana Hatano , Miho Watanabe
发明人： Hiroshi Ohta , Wataru Saito , Syotaro Ono , Munehisa Yabuzaki , Nana Hatano , Miho Watanabe
IPC分类号： H01L29/78
CPC分类号： H01L29/7813 , H01L29/0634 , H01L29/0638 , H01L29/0696 , H01L29/0878 , H01L29/1095 , H01L29/402 , H01L29/41741 , H01L29/7395 , H01L29/7811 , Y10S257/901
摘要： In a vertical power semiconductor device having the super junction structure both in a device section and a terminal section, an n-type impurity layer is formed on the outer peripheral surface in the super junction structure. This allows an electric field on the outer peripheral surface of the super junction structure region to be reduced. Accordingly, a reliable vertical power semiconductor device of a high withstand voltage can be provided.
摘要翻译：在器件部分和端子部分都具有超结结构的垂直功率半导体器件中，在超结结构的外周表面上形成n型杂质层。这允许减小超结结构区域的外周表面上的电场。因此，可以提供高耐受电压的可靠的垂直功率半导体器件。

96. 发明授权

US07695769B2 Composite and method of manufacturing the same 失效
标题翻译：复合材料及其制造方法
公开(公告)号：US07695769B2
公开(公告)日：2010-04-13
申请号：US10935244
申请日：2004-09-08
申请人： Miho Watanabe , Kentaro Kishi , Chikara Manabe , Kazunori Anazawa , Masaki Hirakata , Taishi Shigematsu , Hiroyuki Watanabe , Takashi Isozaki , Shigeki Ooma , Shinsuke Okada
发明人： Miho Watanabe , Kentaro Kishi , Chikara Manabe , Kazunori Anazawa , Masaki Hirakata , Taishi Shigematsu , Hiroyuki Watanabe , Takashi Isozaki , Shigeki Ooma , Shinsuke Okada
IPC分类号： B05D3/02 , B05D3/00
CPC分类号： B82Y30/00 , C08K7/24 , C08K2201/011 , Y10T428/25
摘要： Provided is a nanotube-polymer composite which can effectively utilize characteristics of a carbon nanotube structure. The composite includes a carbon nanotube structure and a polymer, in which: the carbon nanotube structure has a network structure constructed by mutually cross-linking functional groups bonded to multiple carbon nanotubes through chemical bonding of the functional groups together; and the polymer is filled in the network structure. Also provided is a method of manufacturing a composite which includes the steps of: supplying a base body surface with a solution containing multiple carbon nanotubes to which multiple functional groups are bonded; mutually cross-linking the multiple carbon nanotubes through chemical bonding of the multiple functional groups together to construct a network structure constituting a carbon nanotube structure; impregnating the network structure with a polymer liquid forming a polymer; and combining the carbon nanotube structure and the polymer by curing the polymer liquid.
摘要翻译：提供了可以有效利用碳纳米管结构的特征的纳米管 - 聚合物复合材料。复合材料包括碳纳米管结构和聚合物，其中：所述碳纳米管结构具有通过将所述官能团化学键合在一起而将通过与多个碳纳米管结合的官能团相互交联而构成的网络结构; 并且聚合物填充在网络结构中。还提供一种制造复合材料的方法，其包括以下步骤：向基体表面供给含有多个键合有多个官能团的多个碳纳米管的溶液; 通过多个官能团的化学键合将多个碳纳米管相互交联在一起构成构成碳纳米管结构的网络结构; 用形成聚合物的聚合物液体浸渍网状结构; 并通过固化聚合物液体来结合碳纳米管结构和聚合物。

97. 发明申请

US20090197002A1 Carbon nanotube composite structure and method of manufacturing the same 有权
标题翻译：碳纳米管复合结构及其制造方法
公开(公告)号：US20090197002A1
公开(公告)日：2009-08-06
申请号：US12379417
申请日：2009-02-20
申请人： Miho Watanabe , Chikara Manabe , Taishi Shigematsu , Kazunori Anazawa , Takashi Isozaki , Kentaro Kishi , Masaki Hirakata , Shigeki Ooma , Shinsuke Okada , Hiroyuki Watanabe
发明人： Miho Watanabe , Chikara Manabe , Taishi Shigematsu , Kazunori Anazawa , Takashi Isozaki , Kentaro Kishi , Masaki Hirakata , Shigeki Ooma , Shinsuke Okada , Hiroyuki Watanabe
IPC分类号： B05D3/00
CPC分类号： B82B3/00 , B82Y30/00 , B82Y40/00 , Y10T428/2913
摘要： Provided are a carbon nanotube structure more excellent in electric conductivity, thermal conductivity, and mechanical strength, and a method of manufacturing the carbon nanotube structure. A carbon nanotube composite structure is characterized by including: a first carbon nanotube structure in which functional groups bonded to plural carbon nanotubes are chemically bonded and mutually cross-linked to construct a network structure; and a second carbon nanotube structure in which functional groups bonded to plural carbon nanotubes are chemically bonded and mutually cross-linked to construct a network structure, the second carbon nanotube structure being combined with the network structure of the first carbon nanotube structure.
摘要翻译：提供了导电性，导热性和机械强度更优异的碳纳米管结构体以及碳纳米管结构体的制造方法。碳纳米管复合结构的特征在于包括：第一碳纳米管结构，其中键合到多个碳纳米管的官能团化学键合并相互交联以构建网络结构; 以及第二碳纳米管结构，其中与多个碳纳米管结合的官能团化学键合并相互交联以构建网络结构，所述第二碳纳米管结构与所述第一碳纳米管结构的网络结构组合。

98. 发明授权

US07488405B2 Electrode for electrochemical measurement and method for manufacturing the same 失效
标题翻译：用于电化学测量的电极及其制造方法
公开(公告)号：US07488405B2
公开(公告)日：2009-02-10
申请号：US10866725
申请日：2004-06-15
申请人： Taishi Shigematsu , Miho Watanabe , Chikara Manabe , Hiroyuki Watanabe
发明人： Taishi Shigematsu , Miho Watanabe , Chikara Manabe , Hiroyuki Watanabe
IPC分类号： G01N27/00
CPC分类号： B82Y30/00 , G01N27/308 , Y10S977/742 , Y10S977/745 , Y10S977/748 , Y10S977/932 , Y10S977/948 , Y10T428/2913
摘要： The present invention provides an electrode for electrochemical measurement including: a carbon nanotube and an insulator that encloses carbon nanotube, wherein: the carbon nanotube is enclosed by being chemically bonded with the insulator; and part of the carbon nanotube forms an electrical conduction part exposed at a surface of the insulator. The carbon nanotube can include plural carbon nanotubes electrically connected with each other. The electrical conduction part can be part of the plural carbon nanotubes exposed in plural spots at a surface of the insulator through the insulator. The plural carbon nanotubes can form a network structure by being electrically connected with each other by chemical bonding. The present invention also provides a method for manufacturing the electrode for electrochemical measurement.
摘要翻译：本发明提供一种用于电化学测量的电极，包括：碳纳米管和封闭碳纳米管的绝缘体，其中：通过与绝缘体化学键合来封闭碳纳米管; 并且所述碳纳米管的一部分形成在所述绝缘体的表面露出的导电部。碳纳米管可以包括彼此电连接的多个碳纳米管。导电部分可以是通过绝缘体在绝缘体的表面上以多个点暴露的多个碳纳米管的一部分。多个碳纳米管可以通过化学键合彼此电连接而形成网络结构。本发明还提供一种电化学测量用电极的制造方法。

99. 发明申请

US20080053952A1 Rectifying Device, Electronic Circuit Using the Same, and Method of Manufacturing Rectifying Device 审中-公开
标题翻译：整流装置，使用其的电子电路以及整流装置的制造方法
公开(公告)号：US20080053952A1
公开(公告)日：2008-03-06
申请号：US10580436
申请日：2004-05-20
申请人： Shinsuke Okada , Masaki Hirakata , Chikara Manabe , Kazunori Anazawa , Taishi Shigematsu , Miho Watanabe , Kentaro Kishi , Takashi Isozaki , Shigeki Ooma , Hiroyuki Watanabe
发明人： Shinsuke Okada , Masaki Hirakata , Chikara Manabe , Kazunori Anazawa , Taishi Shigematsu , Miho Watanabe , Kentaro Kishi , Takashi Isozaki , Shigeki Ooma , Hiroyuki Watanabe
IPC分类号： H01B13/34
CPC分类号： H01L51/0048 , B82Y10/00 , B82Y30/00 , H01L51/0021 , H01L51/0049 , H01L51/0579 , H01L51/102 , Y10S977/742
摘要： A rectifying device comprising a pair of electrodes, and a carrier transporter consisting of one or more of carbon nanotubes provided between the pair of electrodes wherein high frequency response and heat resistance of the carrier transporter are enhanced by differentiating two connection structures such that the barrier level between one electrode and the first interface of the carrier transporter is different from the barrier level between the other electrode and the second interface of the carrier transporter. An electronic circuit employing such a rectifying device and a process for producing the rectifying device are also provided.
摘要翻译：一种整流装置，包括一对电极和由一对或多个碳纳米管组成的载体转运体，所述碳纳米管设置在所述一对电极之间，其中通过区分两个连接结构来增强载体转运体的高频响应和耐热性，载体转运体的一个电极和第一界面之间的阻挡层不同于另一个电极和载体转运体的第二界面之间的阻挡层。还提供了采用这种整流装置的电子电路和整流装置的制造工艺。

100. 发明授权

US07244374B2 Composite and method of manufacturing the same 有权
标题翻译：复合材料及其制造方法
公开(公告)号：US07244374B2
公开(公告)日：2007-07-17
申请号：US10909369
申请日：2004-08-03
申请人： Kazunori Anazawa , Chikara Manabe , Masaki Hirakata , Kentaro Kishi , Taishi Shigematsu , Miho Watanabe , Takashi Isozaki , Hiroyuki Watanabe , Shigeki Ooma , Shinsuke Okada
发明人： Kazunori Anazawa , Chikara Manabe , Masaki Hirakata , Kentaro Kishi , Taishi Shigematsu , Miho Watanabe , Takashi Isozaki , Hiroyuki Watanabe , Shigeki Ooma , Shinsuke Okada
IPC分类号： H01B1/00 , H01B1/12
CPC分类号： C22C26/00 , B82Y30/00 , C22C49/14 , C22C2026/002 , D01F9/127 , D01F11/12 , Y02P20/129 , Y10T428/249948
摘要： Provided are: a composite formed by mixing a carbon nanotube structure and a metal-containing material, the carbon nanotube structure having a network structure constructed by mutually cross-linking functional groups bonded to plural carbon nanotubes through chemical bonding of the functional groups together; and a method of manufacturing the same. The composite of the carbon nanotube and the metal-containing material is capable of effectively using characteristics of the carbon nanotube structure.
摘要翻译：提供：通过混合碳纳米管结构和含金属材料形成的复合材料，所述碳纳米管结构具有通过将所述官能团通过化学键合将多个碳纳米管相互交联的官能团相互交联而构成的网络结构; 及其制造方法。碳纳米管和含金属材料的复合物能够有效地利用碳纳米管结构的特性。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式