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    • 92. 发明授权
    • Organic light-emitting display apparatus
    • 有机发光显示装置
    • US08487310B2
    • 2013-07-16
    • US13098046
    • 2011-04-29
    • Jin-Goo KangJi-Young KimHyo-Seok Kim
    • Jin-Goo KangJi-Young KimHyo-Seok Kim
    • H01L27/12H01L27/32H01L51/52
    • H01L27/1248H01L27/3246H01L27/3248H01L51/5262H01L51/5265
    • An organic light-emitting display apparatus comprises: a substrate in which a pixel region is defined; a thin film transistor (TFT) disposed on the substrate and spaced apart from the pixel region; a planarization pattern covering the TFT and spaced apart from the pixel region; a first electrode electrically connected to the TFT and formed so as to correspond to at least the pixel region; a pixel-defining layer formed on the first electrode so as to expose a predetermined region of the first electrode; an intermediate layer connected to the exposed region of the first electrode, including an organic emission layer, and formed to correspond to at least the pixel region; and a second electrode electrically connected to the intermediate layer.
    • 一种有机发光显示装置,包括:限定像素区域的基板; 薄膜晶体管(TFT),其设置在所述基板上并与所述像素区域间隔开; 覆盖TFT并与像素区间隔开的平面化图案; 电连接到TFT并形成为至少对应于像素区域的第一电极; 形成在所述第一电极上的像素限定层,以暴露所述第一电极的预定区域; 连接到第一电极的暴露区域的中间层,包括有机发射层,并形成为至少对应于像素区域; 以及电连接到中间层的第二电极。
    • 95. 发明授权
    • Light absorbent and organic antireflection coating composition containing the same
    • 含有该吸收剂和有机抗反射涂料的组合物
    • US07939245B2
    • 2011-05-10
    • US12157819
    • 2008-06-13
    • Joo-Hyeon ParkJi-Young KimJun-Ho Lee
    • Joo-Hyeon ParkJi-Young KimJun-Ho Lee
    • G03F7/11C08F2/44C09K3/00H01L21/30
    • G03F7/091
    • The present invention relates to a light absorbent for organic anti-reflection coating formation, and an organic anti-reflection film composition containing the same. The light absorbent for organic anti-reflection film formation according to the present invention is a compound of the following formula (1a), a compound of the following formula (1b), a mixture of compounds of the formulas (1a) and (1b): wherein X is selected from the group consisting of a substituted or unsubstituted cyclic group having 1 to 20 carbon atoms, aryl, diaryl ether, diaryl sulfide, diaryl sulfoxide and diaryl ketone; and R1 is a hydrogen atom, a substituted or unsubstituted alkyl group having 1 to 10 carbon atoms, or an aryl group having 1 to 14 carbon atoms.
    • 本发明涉及一种用于有机抗反射涂层形成的光吸收剂和含有它的有机抗反射膜组合物。 根据本发明的有机抗反射膜形成用吸光剂是下式(1a)的化合物,下式(1b)的化合物,式(1a)和(1b)的化合物的混合物, 其中X选自具有1至20个碳原子的取代或未取代的环状基团,芳基,二芳基醚,二芳基硫醚,二芳基亚砜和二芳基酮; R1为氢原子,取代或未取代的碳原子数1〜10的烷基或碳原子数1〜14的芳基。
    • 99. 发明授权
    • Recessed gate transistor structure and method of forming the same
    • 嵌入式晶体管结构及其形成方法
    • US07777258B2
    • 2010-08-17
    • US11560756
    • 2006-11-16
    • Min-Hee ChoJi-Young Kim
    • Min-Hee ChoJi-Young Kim
    • H01L27/108H01L29/94
    • H01L29/66621H01L29/41758H01L29/4238H01L29/66659H01L29/7834
    • Recessed gate transistor structures and methods for making the same prevent a short between a gate conductive layer formed on a non-active region and an active region by forming an insulation layer therebetween, even though a misalignment is generated in forming a gate. The method and structure reduce the capacitance between gates. The method includes forming a device isolation film for defining an active region and a non-active region, on a predetermined region of a semiconductor substrate. First and second insulation layers are formed on an entire face of the substrate. A recess is formed in a portion of the active region. A gate insulation layer is formed within the recess, and then a first gate conductive layer is formed within the recess. A second gate conductive layer is formed on the second insulation layer and the first gate conductive layer. Subsequently, source/drain regions are formed.
    • 嵌入栅极晶体管结构及其制造方法即使在形成栅极时产生不对准,也可以通过在其间形成绝缘层来防止形成在非有源区上的栅极导电层与有源区之间的短路。 该方法和结构降低了门之间的电容。 该方法包括在半导体衬底的预定区域上形成用于限定有源区和非有源区的器件隔离膜。 第一和第二绝缘层形成在基板的整个表面上。 在有源区域的一部分中形成凹部。 在凹部内形成栅极绝缘层,然后在凹部内形成第一栅极导电层。 第二栅极导电层形成在第二绝缘层和第一栅极导电层上。 随后,形成源/漏区。