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91. 发明授权

US08237761B2 Semiconductor member, semiconductor article manufacturing method, and LED array using the manufacturing method 有权
标题翻译：半导体元件，半导体制品制造方法和使用该制造方法的LED阵列
公开(公告)号：US08237761B2
公开(公告)日：2012-08-07
申请号：US12442902
申请日：2007-10-25
申请人： Takao Yonehara , Kenji Yamagata , Yoshinobu Sekiguchi , Kojiro Nishi
发明人： Takao Yonehara , Kenji Yamagata , Yoshinobu Sekiguchi , Kojiro Nishi
IPC分类号： B41J2/45 , H01L21/30 , H01L21/46
CPC分类号： H01L27/153 , B41J2/45 , H01L21/7806 , H01L21/784 , H01L33/0079 , H01L33/0095 , H01L2924/0002 , H01L2924/00
摘要： A novel semiconductor article manufacturing method and the like are provided. A method of manufacturing a semiconductor article having a compound semiconductor multilayer film formed on a semiconductor substrate includes: preparing a member including an etching sacrificial layer (1010), a compound semiconductor multilayer film (1020), an insulating film (2010), and a semiconductor substrate (2000) on a compound semiconductor substrate (1000), and having a first groove (2005) which passes through the semiconductor substrate and the insulating film, and a semiconductor substrate groove (1025) which is a second groove provided in the compound semiconductor multilayer film so as to be connected to the first groove, and bringing an etchant into contact with the etching sacrificial layer through the first groove and then the second groove and etching the etching sacrificial layer to separate the compound semiconductor substrate from the member.
摘要翻译：提供了一种新颖的半导体制品制造方法等。制造具有形成在半导体衬底上的化合物半导体多层膜的半导体产品的方法包括：制备包括蚀刻牺牲层（1010），化合物半导体多层膜（1020），绝缘膜（2010）和半导体衬底（2000），并且具有通过半导体衬底和绝缘膜的第一沟槽（2005）以及设置在该化合物半导体衬底（1000）中的第二沟槽的半导体衬底沟槽（1025）半导体多层膜，以便连接到第一沟槽，并使蚀刻剂通过第一沟槽和第二沟槽与蚀刻牺牲层接触，然后蚀刻蚀刻牺牲层，以将化合物半导体衬底与构件分离。

92. 发明申请

US20120171866A1 SUBSTRATE STRUCTURE INCLUDING FUNCTIONAL REGION AND METHOD FOR TRANSFERRING FUNCTIONAL REGION 有权
标题翻译：基层结构，包括功能区域和转移功能区域的方法
公开(公告)号：US20120171866A1
公开(公告)日：2012-07-05
申请号：US13395202
申请日：2010-09-14
申请人： Takao Yonehara
发明人： Takao Yonehara
IPC分类号： H01L21/3105 , B32B3/00 , G03F7/11 , G03F7/20 , G03F7/004
CPC分类号： B41J2/45 , H01L21/187 , H01L33/0079 , H01L2924/00013 , H01L2924/01057 , H01L2924/3025 , Y10T428/24802 , H01L2224/13099 , H01L2224/13599 , H01L2224/05599 , H01L2224/05099 , H01L2224/29099 , H01L2224/29599
摘要： According to a method for transferring a functional region, at least part of functional regions on separation layers arranged on a first substrate is transferred onto a second substrate, the separation layers being capable of being brought into a separable state by treatment. In a first bonding step, the first substrate is bonded to the second substrate with a dry film resist arranged between the second substrate and the at least part of the functional regions above the first substrate. In an exposure step, at least part of the dry film resist is exposed. In a patterning step, the exposed dry film resist is patterned.
摘要翻译：根据用于转移功能区域的方法，将布置在第一基板上的分离层上的功能区域的至少一部分转移到第二基板上，分离层能够通过处理进入分离状态。在第一接合步骤中，第一衬底与布置在第二衬底和第一衬底上的功能区域的至少部分之间的干膜抗蚀剂结合到第二衬底。在曝光步骤中，暴露干膜抗蚀剂的至少一部分。在图案化步骤中，将曝光的干膜抗蚀剂图案化。

93. 发明授权

US08035668B2 Exposure apparatus and device manufacturing method 有权
标题翻译：曝光装置和装置制造方法
公开(公告)号：US08035668B2
公开(公告)日：2011-10-11
申请号：US11336754
申请日：2006-01-19
申请人： Mitsuro Sugita , Kazuaki Ohmi , Takao Yonehara , Toshihiko Tsuji , Takaaki Terashi , Tohru Kohda , Shinji Tsutsui
发明人： Mitsuro Sugita , Kazuaki Ohmi , Takao Yonehara , Toshihiko Tsuji , Takaaki Terashi , Tohru Kohda , Shinji Tsutsui
IPC分类号： G03G13/04
CPC分类号： G03F7/70275
摘要： An exposure apparatus which forms a pattern on an object. The apparatus includes an exposure head structure in which a plurality of elemental exposure units are arrayed, each elemental exposure unit including (i) at least one light source for emitting exposure light and (ii) an optical element which forms an image of the at least one light source on the object, for exposing the object. Positions of the images of the at least one light source in a direction perpendicular to a surface of the object include plural positions different from each other. A sensor detects a position of the surface of the object and produces a detection result. A controller receives the detection result and controls the exposure head structure such that a pattern is formed on the object by the exposure is selected to expose the object based on the detection result by the sensor.
摘要翻译：在物体上形成图案的曝光装置。该装置包括其中排列多个元素曝光单元的曝光头结构，每个元素曝光单元包括：（i）至少一个用于发射曝光光的光源;以及（ii）至少形成至少一个图像的光学元件对象上的一个光源，用于暴露对象。至少一个光源的图像在垂直于物体表面的方向上的位置包括彼此不同的多个位置。传感器检测物体表面的位置并产生检测结果。控制器接收检测结果并控制曝光头结构，使得通过曝光在物体上形成图案被选择以基于传感器的检测结果来曝光物体。

94. 发明授权

US07919381B2 Germanium substrate-type materials and approach therefor 有权
标题翻译：锗衬底型材料及其方法
公开(公告)号：US07919381B2
公开(公告)日：2011-04-05
申请号：US12719796
申请日：2010-03-08
申请人： Ammar Munir Nayfeh , Chi On Chui , Krishna C. Saraswat , Takao Yonehara
发明人： Ammar Munir Nayfeh , Chi On Chui , Krishna C. Saraswat , Takao Yonehara
IPC分类号： H01L21/76
CPC分类号： H01L29/518 , H01L21/02381 , H01L21/0245 , H01L21/02532 , H01L21/02587 , H01L21/0262 , H01L21/2807 , H01L21/28255 , H01L29/16 , H01L29/165 , H01L29/513 , H01L29/66575 , H01L29/94
摘要： Germanium circuit-type structures are facilitated. In one example embodiment, a multi-step growth and anneal process is implemented to grow Germanium (Ge) containing material, such as heteroepitaxial-Germanium, on a substrate including Silicon (Si) or Silicon-containing material. In certain applications, defects are generally confined near a Silicon/Germanium interface, with defect threading to an upper surface of the Germanium containing material generally being inhibited. These approaches are applicable to a variety of devices including Germanium MOS capacitors, pMOSFETs and optoelectronic devices.
摘要翻译：锗电路型结构方便。在一个示例实施例中，实施多步生长和退火工艺以在包括硅（Si）或含硅材料的衬底上生长含锗（Ge）的材料，例如异质外延锗。在某些应用中，缺陷通常被限制在硅/锗界面附近，通常阻止含锗材料的上表面的缺陷穿线。这些方法适用于包括锗MOS电容器，pMOSFET和光电器件在内的各种器件。

95. 发明授权

US07786495B2 Light-emitting element array and image forming apparatus 有权
标题翻译：发光元件阵列和图像形成装置
公开(公告)号：US07786495B2
公开(公告)日：2010-08-31
申请号：US12259420
申请日：2008-10-28
申请人： Tetsuya Takeuchi , Makoto Koto , Kenji Yamagata , Yoshinobu Sekiguchi , Takao Yonehara
发明人： Tetsuya Takeuchi , Makoto Koto , Kenji Yamagata , Yoshinobu Sekiguchi , Takao Yonehara
IPC分类号： H01L33/00
CPC分类号： H01L27/153 , B41J2/45
摘要： A light-emitting element array can be manufactured without the separation of a metal reflection layer. The light-emitting element array includes a plurality of light-emitting element portions provided on a substrate, at least one space of the spaces between adjacent light-emitting element portions being electrically separated from each other, wherein the metal reflection layer is provided on the substrate and under the plurality of light-emitting element portions, and a resistive layer for electrical separation between the light-emitting element portions is provided between the plurality of light-emitting element portions and the metal reflection layer. The plurality of light-emitting element portions are divided into a plurality of blocks. Each of the blocks includes a plurality of light-emitting portions. The electrical separation between the light-emitting portions can be made as electrical separation between adjacent light-emitting element portions in adjacent and different blocks.
摘要翻译：可以在不分离金属反射层的情况下制造发光元件阵列。发光元件阵列包括设置在基板上的多个发光元件部，相邻的发光元件部之间的空间的至少一个空间彼此电分离，其中金属反射层设置在基板和多个发光元件部分之下，并且在多个发光元件部分和金属反射层之间设置用于在发光元件部分之间进行电气分离的电阻层。多个发光元件部分被分成多个块。每个块包括多个发光部分。发光部之间的电气分离可以在相邻的和不同的块之间的相邻的发光元件部分之间进行电分离。

96. 发明授权

US07659987B2 Device and method for acquiring information on objective substance to be detected by detecting a change of wavelength characteristics on the optical transmittance 失效
标题翻译：通过检测光透射率上的波长特性的变化来获取关于要检测的物质的信息的装置和方法
公开(公告)号：US07659987B2
公开(公告)日：2010-02-09
申请号：US11659717
申请日：2005-09-14
申请人： Norihiko Utsunomiya , Mitsuro Sugita , Satoru Nishiuma , Takao Yonehara
发明人： Norihiko Utsunomiya , Mitsuro Sugita , Satoru Nishiuma , Takao Yonehara
IPC分类号： G01N21/00
CPC分类号： G01N21/554 , G01N21/648 , G01N2021/258 , G01N2201/0635 , G01N2201/0636
摘要： An information-acquiring device for acquiring information on an objective substance to be detected, which is provided with a sensing element that has a surface capable of fixing the objective substance to be detected thereon, and makes applied light change its wavelength characteristics in response to the fixed state of the objective substance to be detected onto the surface, a light source, and light-receiving means for receiving light emitted from the light source through the sensing element, has the light-receiving means and the light source arranged on the same substrate so that the light which has been emitted from the light source and has been transmitted through the sensing element can be led to the light-receiving means, and has means for varying the wavelength regions of each light incident on each of a plurality of the light-receiving means installed in an optical path from the light source to the light-receiving means.
摘要翻译：一种信息获取装置，用于获取关于待检测的物质的信息，该信息获取装置设置有具有能够固定待检测的物体的表面的感测元件，并且使得施加的光响应于该检测元件的波长特性而改变其要检测的目标物质的固定状态，光源和用于接收通过感测元件从光源发射的光的光接收装置，其中光接收装置和光源布置在同一基板上使得已经从光源发射并已经透射通过感测元件的光可以被引导到光接收装置，并且具有用于改变入射到多个光中的每一个的每个光的波长区域的装置 - 接收装置安装在从光源到光接收装置的光路中。

97. 发明授权

US07231123B2 Photonic crystal optical element and manufacturing method therefor 失效
标题翻译：光子晶体光学元件及其制造方法
公开(公告)号：US07231123B2
公开(公告)日：2007-06-12
申请号：US10558830
申请日：2004-12-20
申请人： Mitsuro Sugita , Toshihiko Ouchi , Takao Yonehara
发明人： Mitsuro Sugita , Toshihiko Ouchi , Takao Yonehara
IPC分类号： G02B6/10
CPC分类号： G02B6/1225 , B82Y20/00
摘要： To provide a novel technique for producing a difference in refractive index between two regions. An optical element according to the present invention includes a first porous region (2002), a second porous region (2004), and a non-porous region (2003) formed between the first porous region (2002) and the second porous region (2004), the non-porous region having a refractive index higher than a refractive index of the first porous region.
摘要翻译：提供一种用于产生两个区域之间的折射率差异的新技术。根据本发明的光学元件包括形成在第一多孔区域（2002）和第二多孔区域（2004）之间的第一多孔区域（2002），第二多孔区域（2004）和无孔区域（2003）），所述非多孔区域的折射率高于所述第一多孔区域的折射率。

98. 发明申请

US20060158504A1 Exposure apparatus and device manufacturing method 有权
标题翻译：曝光装置和装置制造方法
公开(公告)号：US20060158504A1
公开(公告)日：2006-07-20
申请号：US11336754
申请日：2006-01-19
申请人： Mitsuro Sugita , Kazuaki Ohmi , Takao Yonehara , Toshihiko Tsuji , Takaaki Terashi , Tohru Kohda , Shinji Tsutsui
发明人： Mitsuro Sugita , Kazuaki Ohmi , Takao Yonehara , Toshihiko Tsuji , Takaaki Terashi , Tohru Kohda , Shinji Tsutsui
IPC分类号： B41J2/385
CPC分类号： G03F7/70275
摘要： An exposure apparatus which forms a pattern on an object includes an exposure head structure in which a plurality of elemental exposure units each including at least one light source and an optical element which forms an image of the light source on the object are arrayed, a sensor which detects the surface position of the object, and a controller which controls exposure by the exposure head structure based on the detection result by the sensor. The controller forms a pattern on the object while selectively operating one of the plurality of elemental exposure units, which satisfies a predetermined condition.
摘要翻译：在物体上形成图案的曝光装置包括曝光头结构，其中排列有多个元件曝光单元，每个元素曝光单元包括至少一个光源和形成物体上光源的图像的光学元件，传感器其检测物体的表面位置，以及控制器，其基于传感器的检测结果来控制曝光头结构的曝光。控制器在选择性地操作满足预定条件的多个元素曝光单元中的一个的同时，在物体上形成图案。

99. 发明授权

US07053526B2 Piezoelectric structure, liquid ejecting head and manufacturing method therefor 有权
公开(公告)号：US07053526B2
公开(公告)日：2006-05-30
申请号：US10071095
申请日：2002-02-11
申请人： Akira Unno , Takao Yonehara , Tetsuro Fukui , Takanori Matsuda , Kiyotaka Wasa
发明人： Akira Unno , Takao Yonehara , Tetsuro Fukui , Takanori Matsuda , Kiyotaka Wasa
IPC分类号： H01L41/08
CPC分类号： B41J2/1628 , B41J2/161 , B41J2/1629 , B41J2/1632 , B41J2/1646 , H01L41/0815 , H01L41/0973 , Y10T29/42 , Y10T29/49128 , Y10T29/4913 , Y10T29/49401
摘要： A piezoelectric structure includes a vibrational plate; a piezoelectric film; the vibrational plate including a layer of a monocrystal material, a polycrystal material, a monocrystal material doped with an element which is different from an element constituting the monocrystal material, or a polycrystal material doped with an element which is different from an element constituting the polycrystal materials, and oxide layers sandwiching the aforementioned layer, the piezoelectric film has a single orientation crystal or monocrystal structure.

100. 发明授权

US07029950B2 Thin-film semiconductor device and method of manufacturing the same 失效
公开(公告)号：US07029950B2
公开(公告)日：2006-04-18
申请号：US11100605
申请日：2005-04-07
申请人： Takao Yonehara , Kiyofumi Sakaguchi
发明人： Takao Yonehara , Kiyofumi Sakaguchi
IPC分类号： H01L21/44
CPC分类号： H01L21/6835 , H01L21/3063 , H01L21/78 , H01L23/5389 , H01L24/48 , H01L24/73 , H01L24/83 , H01L25/0655 , H01L25/50 , H01L2221/68359 , H01L2221/68363 , H01L2221/68368 , H01L2224/05599 , H01L2224/16 , H01L2224/2919 , H01L2224/32225 , H01L2224/45099 , H01L2224/48091 , H01L2224/48227 , H01L2224/73265 , H01L2224/83001 , H01L2224/83191 , H01L2224/838 , H01L2224/85399 , H01L2224/92247 , H01L2924/00014 , H01L2924/01004 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01033 , H01L2924/01039 , H01L2924/01072 , H01L2924/01075 , H01L2924/0132 , H01L2924/0665 , H01L2924/10253 , H01L2924/10329 , H01L2924/12042 , H01L2924/1305 , H01L2924/14 , H01L2924/181 , H01L2924/19041 , H01L2924/00 , H01L2924/00012 , H01L2924/01015 , H01L2924/01049 , H01L2924/01031 , H01L2924/3512 , H01L2224/45015 , H01L2924/207
摘要： A thin-film semiconductor device with a reduced influence on a device formation layer in separation and a method of manufacturing the device are provided. The manufacturing method includes the step of preparing a member having a semiconductor film with a semiconductor element and/or semiconductor integrated circuit on a separation layer, the separation step of separating the member at the separation layer by a pressure of a fluid, and the chip forming step of, after the separation step, forming the semiconductor film into chips.

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