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91. 发明授权

US08477818B2 Gallium nitride-based semiconductor laser device, and method for fabricating gallium nitride-based semiconductor laser device 有权
标题翻译：氮化镓系半导体激光器件及其制造方法
公开(公告)号：US08477818B2
公开(公告)日：2013-07-02
申请号：US13431043
申请日：2012-03-27
申请人： Tetsuya Kumano , Masaki Ueno , Takashi Kyono , Yohei Enya , Katsunori Yanashima , Kunihiko Tasai , Hiroshi Nakajima
发明人： Tetsuya Kumano , Masaki Ueno , Takashi Kyono , Yohei Enya , Katsunori Yanashima , Kunihiko Tasai , Hiroshi Nakajima
IPC分类号： H01S5/00
CPC分类号： H01S5/34333 , B82Y20/00 , H01S5/3063 , H01S5/3202 , H01S2304/04
摘要： A gallium nitride-based semiconductor laser device with reduced threshold current. The gallium nitride-based semiconductor laser device is provided with an n-type cladding layer, an n-side light guide layer, an active layer, a p-side light guide layer, and a p-type cladding layer. The n-side light guide layer and the p-side light guide layer both contain indium. Each of indium compositions of the n-side light guide layer and the p-side light guide layer is not less than 2% and not more than 6%. A film thickness of the n-type cladding layer is in the range of not less than 65% and not more than 85% of a total of the film thickness of the n-type cladding layer and a film thickness of the p-type cladding layer.
摘要翻译：具有降低的阈值电流的氮化镓基半导体激光器件。氮化镓系半导体激光装置具备n型包覆层，n侧导光层，有源层，p侧导光层和p型覆层。 n侧导光层和p侧导光层均含有铟。 n侧导光层和p侧导光层的铟成分中的每一种不小于2％且不大于6％。 n型包覆层的膜厚在n层包层的膜厚的合计的65％以上且85％以下，p型包层的膜厚层。

92. 发明授权

US08295317B2 Method of making nitride semiconductor laser, method of making epitaxial wafer, and nitride semiconductor laser 失效
标题翻译：制造氮化物半导体激光器的方法，制造外延晶片的方法和氮化物半导体激光器
公开(公告)号：US08295317B2
公开(公告)日：2012-10-23
申请号：US12878298
申请日：2010-09-09
申请人： Masaki Ueno , Takashi Kyono
发明人： Masaki Ueno , Takashi Kyono
IPC分类号： H01S5/00
CPC分类号： H01S5/34333 , B82Y20/00 , H01L21/02389 , H01L21/02458 , H01L21/0254 , H01L21/0262 , H01S2302/00 , H01S2304/04
摘要： A method of making a nitride semiconductor laser comprises forming a first InGaN film for an active layer on a gallium nitride based semiconductor region, and the first InGaN film has a first thickness. In the formation of the first InGaN film, a first gallium raw material, a first indium raw material, and a first nitrogen raw material are supplied to a reactor to deposit a first InGaN for forming the first InGaN film at a first temperature, and the first InGaN has a thickness thinner than the first thickness. Next, the first InGaN is heat-treated at a second temperature lower than the first temperature in the reactor, while supplying a second indium raw material and a second nitrogen raw material to the reactor. Then, after the heat treatment, a second InGaN is deposited at least once to form the first InGaN film.
摘要翻译：制造氮化物半导体激光器的方法包括在氮化镓基半导体区域上形成用于有源层的第一InGaN膜，并且第一InGaN膜具有第一厚度。在第一InGaN膜的形成中，将第一镓原料，第一铟原料和第一氮原料供给到反应器，以在第一温度下沉积用于形成第一InGaN膜的第一InGaN，第一InGaN具有比第一厚度更薄的厚度。接着，将第一InGaN在比反应器中的第一温度低的第二温度下进行热处理，同时向反应器供给第二铟原料和第二氮原料。然后，在热处理之后，将至少一次沉积第二InGaN以形成第一InGaN膜。

93. 发明申请

US20120205661A1 SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME 有权
标题翻译：半导体器件及其制造方法
公开(公告)号：US20120205661A1
公开(公告)日：2012-08-16
申请号：US13353707
申请日：2012-01-19
申请人： Takashi KYONO , Kuniaki Ishihara , Akihiro Hachigo , Takahisa Yoshida , Masaki Ueno , Makoto Kiyama
发明人： Takashi KYONO , Kuniaki Ishihara , Akihiro Hachigo , Takahisa Yoshida , Masaki Ueno , Makoto Kiyama
IPC分类号： H01L29/20 , H01L21/762
CPC分类号： H01L33/007 , H01L33/0079 , H01L33/025
摘要： A semiconductor device includes a supporting substrate, a conductive layer placed on the supporting substrate, and at least one group III nitride semiconductor layer placed on the conductive layer. Of the group III nitride semiconductor layers, a conductive-layer-neighboring group III nitride semiconductor layer has n type conductivity, dislocation density of at most 1×107 cm−2, and oxygen concentration of at most 5×1018 cm−3. Thus, an n-down type device having a semiconductor layer of high crystallinity can be provided.
摘要翻译：半导体器件包括支撑衬底，放置在支撑衬底上的导电层和放置在导电层上的至少一个III族氮化物半导体层。在III族氮化物半导体层中，导电层相邻的III族氮化物半导体层具有n型导电性，位错密度至多为1×107cm-2，氧浓度为至多5×1018cm-3。因此，可以提供具有高结晶度的半导体层的n型型器件。

94. 发明申请

US20110175201A1 GROUP III NITRIDE SEMICONDUCTOR DEVICE 失效
标题翻译： III类氮化物半导体器件
公开(公告)号：US20110175201A1
公开(公告)日：2011-07-21
申请号：US12834977
申请日：2010-07-13
申请人： Shinji Tokuyama , Masaki Ueno , Masahiro Adachi , Takashi Kyono , Takamichi Sumitomo , Koji Katayama , Yoshihiro Saito
发明人： Shinji Tokuyama , Masaki Ueno , Masahiro Adachi , Takashi Kyono , Takamichi Sumitomo , Koji Katayama , Yoshihiro Saito
IPC分类号： H01L29/20
CPC分类号： H01L21/28575 , H01L29/045 , H01L29/2003 , H01L29/452 , H01L33/32 , H01L33/40
摘要： A Group III nitride semiconductor device has a semiconductor region, a metal electrode, and a transition layer. The semiconductor region has a surface comprised of a Group III nitride crystal. The semiconductor region is doped with a p-type dopant. The surface is one of a semipolar surface and a nonpolar surface. The metal electrode is provided on the surface. The transition layer is formed between the Group III nitride crystal of the semiconductor region and the metal electrode. The transition layer is made by interdiffusion of a metal of the metal electrode and a Group III nitride of the semiconductor region.
摘要翻译： III族氮化物半导体器件具有半导体区域，金属电极和过渡层。半导体区具有由III族氮化物晶体组成的表面。半导体区域掺杂有p型掺杂剂。表面是半极性表面和非极性表面之一。金属电极设置在表面上。在半导体区域的III族氮化物晶体和金属电极之间形成过渡层。过渡层是通过金属电极的金属和半导体区域的III族氮化物的相互扩散而制成的。

95. 发明授权

US07781314B2 Nitride semiconductor device manufacturing method 有权
标题翻译：氮化物半导体器件制造方法
公开(公告)号：US07781314B2
公开(公告)日：2010-08-24
申请号：US11958315
申请日：2007-12-17
申请人： Takashi Kyono , Masaki Ueno
发明人： Takashi Kyono , Masaki Ueno
IPC分类号： H01L21/306 , C30B23/02
CPC分类号： C30B25/02 , C30B29/403 , C30B29/406 , H01L21/02389 , H01L21/02395 , H01L21/0242 , H01L21/0243 , H01L21/02458 , H01L21/02505 , H01L21/0254 , H01L21/0262 , H01L21/02661 , Y10S438/906
摘要： Affords a manufacturing method enabling nitride-based semiconductor devices containing epitaxial films excelling in flatness and crystallinity to be easily produced. Method of manufacturing nitride semiconductor devices that are formed onto a semiconductor substrate being a compound containing nitrogen, and a Group IIIA element for forming compounds with nitrogen, including steps of: heating the semiconductor substrate (1) to a film-deposition temperature; supplying to the substrate a film-deposition gas containing a source gas for the Group IIIA element and a nitrogen source gas; and epitaxially growing onto the semiconductor substrate a thin film (2) of a compound containing nitrogen and the Group IIIA element; and being furnished with a step, in advance of the epitaxial growth step, of heating the semiconductor substrate to a pretreating temperature less than the film-deposition temperature, to clean the surface of the semiconductor substrate.
摘要翻译：提供一种能够容易地生产出具有优异的平坦度和结晶度的外延膜的基于氮化物的半导体器件的制造方法。制造形成在含有氮的化合物的半导体衬底上的氮化物半导体器件的制造方法和用于形成氮化合物的IIIA族元素，包括以下步骤：将半导体衬底（1）加热到成膜温度; 向所述基板供给含有用于所述IIIA族元素的源气体和氮源气体的成膜气体; 并在半导体衬底上外延生长含有氮化合物和IIIA族元素的化合物的薄膜（2）; 并且在外延生长步骤之前，将半导体衬底加热至小于成膜温度的预处理温度，以便清洁半导体衬底的表面。

96. 发明申请

US20120061643A1 GaN-BASED SEMICONDUCTOR LIGHT EMITTING DEVICE AND THE METHOD FOR MAKING THE SAME 失效
标题翻译：基于GaN的半导体发光器件及其制造方法
公开(公告)号：US20120061643A1
公开(公告)日：2012-03-15
申请号：US13295840
申请日：2011-11-14
申请人： Yohei Enya , Takashi Kyono , Takamichi Sumitomo , Katsushi Akita , Masaki Ueno , Takao Nakamura
发明人： Yohei Enya , Takashi Kyono , Takamichi Sumitomo , Katsushi Akita , Masaki Ueno , Takao Nakamura
IPC分类号： H01L33/04 , H01L33/32
CPC分类号： H01L33/16 , B82Y20/00 , H01L33/32 , H01S5/0014 , H01S5/2009 , H01S5/3202 , H01S5/3403 , H01S5/34333
摘要： A GaN-based semiconductor light emitting device 11a includes a substrate 13 composed of a GaN-based semiconductor having a primary surface 13a tilting from the c-plane toward the m-axis at a tilt angle α of more than or equal to 63 degrees and less than 80 degrees, a GaN-based semiconductor epitaxial region 15, an active layer 17, an electron blocking layer 27, and a contact layer 29. The active layer 17 is composed of a GaN-based semiconductor containing indium. The substrate 13 has a dislocation density of 1×107 cm−2 or less. In the GaN-based semiconductor light emitting device 11a provided with the active layer containing indium, a decrease in quantum efficiency under high current injection can be moderated.
摘要翻译： GaN基半导体发光器件11a包括由具有从c面朝向m轴倾斜角度大于或等于63度的主表面13a的GaN基半导体构成的衬底13，低于80度的GaN基半导体外延区域15，有源层17，电子阻挡层27和接触层29.有源层17由包含铟的GaN基半导体构成。基板13的位错密度为1×10 7 cm -2以下。在具有含有铟的有源层的GaN系半导体发光元件11a中，能够缓和高电流注入时的量子效率的降低。

97. 发明申请

US20100008393A1 GROUP III NITRIDE SEMICONDUCTOR LIGHT-EMITTING DEVICE AND EPITAXIAL WAFER 审中-公开
标题翻译： III类氮化物半导体发光器件和外延晶体管
公开(公告)号：US20100008393A1
公开(公告)日：2010-01-14
申请号：US12500112
申请日：2009-07-09
申请人： Yohei Enya , Takashi Kyono , Katsushi Akita , Masaki Ueno
发明人： Yohei Enya , Takashi Kyono , Katsushi Akita , Masaki Ueno
IPC分类号： H01S5/323
CPC分类号： H01L33/32 , H01L33/06
摘要： The group II nitride semiconductor light-emitting device includes: a gallium nitride based semiconductor region of n-type; a p-type gallium nitride based semiconductor region; a hole-blocking layer; and an active layer. The gallium nitride based semiconductor region of n-type has a primary surface, and the primary surface extends on a predetermined plane. The c-axis of the gallium nitride based semiconductor region tilts from a normal line of the predetermined plane. The hole-blocking layer comprises a first gallium nitride based semiconductor. The band gap of the hole-blocking layer is greater than the band gap of the gallium nitride based semiconductor region, and the thickness of the hole-blocking layer is less than the thickness of the gallium nitride based semiconductor region. The active layer comprises a gallium nitride semiconductor. The active layer is provided between the p-type gallium nitride based semiconductor region and the hole-blocking layer. The hole-blocking layer and the active layer is provided between the primary surface of the gallium nitride based semiconductor region and the p-type gallium nitride based semiconductor region. The band gap of the hole-blocking layer is greater than a maximum band gap of the active layer.
摘要翻译： II族氮化物半导体发光器件包括：n型氮化镓基半导体区域; p型氮化镓基半导体区域; 空穴阻挡层; 和活性层。 n型氮化镓基半导体区域具有主表面，并且主表面在预定平面上延伸。氮化镓基半导体区域的c轴从预定平面的法线倾斜。空穴阻挡层包括第一氮化镓基半导体。空穴阻挡层的带隙大于氮化镓基半导体区域的带隙，并且空穴阻挡层的厚度小于氮化镓基半导体区域的厚度。有源层包括氮化镓半导体。有源层设置在p型氮化镓基半导体区域和空穴阻挡层之间。空穴阻挡层和有源层设置在氮化镓基半导体区域的主表面和p型氮化镓基半导体区域之间。空穴阻挡层的带隙大于有源层的最大带隙。

98. 发明授权

US07387678B2 GaN substrate and method of fabricating the same, nitride semiconductor device and method of fabricating the same 有权
标题翻译： GaN衬底及其制造方法，氮化物半导体器件及其制造方法
公开(公告)号：US07387678B2
公开(公告)日：2008-06-17
申请号：US10875512
申请日：2004-06-25
申请人： Katsushi Akita , Eiryo Takasuka , Masahiro Nakayama , Masaki Ueno , Kouhei Miura , Takashi Kyono
发明人： Katsushi Akita , Eiryo Takasuka , Masahiro Nakayama , Masaki Ueno , Kouhei Miura , Takashi Kyono
IPC分类号： C30B29/38
CPC分类号： C30B25/02 , C30B25/183 , C30B29/403 , C30B29/406 , H01L21/02389 , H01L21/02458 , H01L21/0254 , H01L21/0262 , H01L29/2003 , H01L33/007
摘要： A GaN substrate comprises a GaN single crystal substrate, an AlxGa1-xN intermediate layer (0
摘要翻译： GaN衬底包括在衬底上外延生长的GaN单晶衬底，Al x x Ga 1-x N中间层（0

99. 发明申请

US20080132044A1 Nitride Semiconductor Device Manufacturing Method 有权
标题翻译：氮化物半导体器件制造方法
公开(公告)号：US20080132044A1
公开(公告)日：2008-06-05
申请号：US11958315
申请日：2007-12-17
申请人： Takashi Kyono , Masaki Ueno
发明人： Takashi Kyono , Masaki Ueno
IPC分类号： H01L21/20
CPC分类号： C30B25/02 , C30B29/403 , C30B29/406 , H01L21/02389 , H01L21/02395 , H01L21/0242 , H01L21/0243 , H01L21/02458 , H01L21/02505 , H01L21/0254 , H01L21/0262 , H01L21/02661 , Y10S438/906
摘要： Affords a manufacturing method enabling nitride-based semiconductor devices containing epitaxial films excelling in flatness and crystallinity to be easily produced. Method of manufacturing nitride semiconductor devices that are formed onto a semiconductor substrate being a compound containing nitrogen, and a Group IIIA element for forming compounds with nitrogen, including steps of: heating the semiconductor substrate (1) to a film-deposition temperature; supplying to the substrate a film-deposition gas containing a source gas for the Group IIIA element and a nitrogen source gas; and epitaxially growing onto the semiconductor substrate a thin film (2) of a compound containing nitrogen and the Group IIIA element; and being furnished with a step, in advance of the epitaxial growth step, of heating the semiconductor substrate to a pretreating temperature less than the film-deposition temperature, to clean the surface of the semiconductor substrate.
摘要翻译：提供一种能够容易地生产出具有优异的平坦度和结晶度的外延膜的基于氮化物的半导体器件的制造方法。制造形成在含有氮的化合物的半导体衬底上的氮化物半导体器件的制造方法和用于形成氮化合物的IIIA族元素，包括以下步骤：将半导体衬底（1）加热到成膜温度; 向所述基板供给含有用于所述IIIA族元素的源气体和氮源气体的成膜气体; 并在半导体衬底上外延生长含有氮化合物和IIIA族元素的化合物的薄膜（2）; 并且在外延生长步骤之前，将半导体衬底加热至小于成膜温度的预处理温度，以便清洁半导体衬底的表面。

100. 发明申请

US20050173715A1 NITRIDE SEMICONDUCTOR DEVICES AND METHOD OF THEIR MANUFACTURE 审中-公开
标题翻译： NITRIDE SEMICONDUCTOR DEVICES AND METHOD OF THE MANUFACTURE
公开(公告)号：US20050173715A1
公开(公告)日：2005-08-11
申请号：US10514261
申请日：2004-02-19
申请人： Takashi Kyono , Masaki Ueno
发明人： Takashi Kyono , Masaki Ueno
IPC分类号： C23C16/02 , C23C16/34 , C30B25/02 , H01L21/205 , H01L33/32 , H01L29/22
CPC分类号： C30B25/02 , C30B29/403 , C30B29/406 , H01L21/02389 , H01L21/02395 , H01L21/0242 , H01L21/0243 , H01L21/02458 , H01L21/02505 , H01L21/0254 , H01L21/0262 , H01L21/02661 , Y10S438/906
摘要： Affords a manufacturing method enabling nitride-based semiconductor devices containing epitaxial films excelling in flatness and crystallinity to be easily produced, and makes available nitride-based semiconductor devices manufactured by the method. Method of manufacturing nitride semiconductor devices that are formed onto a semiconductor substrate being a compound containing a Group IIIA element for forming compounds with nitrogen, and nitrogen, including steps of heating the semiconductor substrate (1) to a film-deposition temperature, supplying to the substrate a film-deposition gas containing a source gas for the Group IIIA element and a nitrogen source gas, and epitaxially growing onto the semiconductor substrate a thin film (2) of a compound containing the Group IIIA element and nitrogen, and being furnished with a step, in advance of the epitaxial growth step, of heating the semiconductor substrate to a pretreating temperature less than the film-deposition temperature, to clean the surface of the semiconductor substrate.
摘要翻译：提供一种使得能够容易地制造含有优异的平坦度和结晶度的外延膜的基于氮化物的半导体器件的制造方法，并且使得可获得通过该方法制造的氮化物基半导体器件。制造形成在半导体衬底上的氮化物半导体器件的方法是含有用于形成氮化合物的IIIA族元素的化合物和氮，包括将半导体衬底（1）加热至膜沉积温度的步骤，供给至对包含IIIA族元素和氮源气体的源气体的成膜气体进行基板的外延生长在半导体基板上的含有IIIA族元素和氮的化合物的薄膜（2），并配备有步骤，在外延生长步骤之前，将半导体衬底加热至小于成膜温度的预处理温度，以清洁半导体衬底的表面。

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