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1. 发明授权

US07387678B2 GaN substrate and method of fabricating the same, nitride semiconductor device and method of fabricating the same 有权
标题翻译： GaN衬底及其制造方法，氮化物半导体器件及其制造方法
公开(公告)号：US07387678B2
公开(公告)日：2008-06-17
申请号：US10875512
申请日：2004-06-25
申请人： Katsushi Akita , Eiryo Takasuka , Masahiro Nakayama , Masaki Ueno , Kouhei Miura , Takashi Kyono
发明人： Katsushi Akita , Eiryo Takasuka , Masahiro Nakayama , Masaki Ueno , Kouhei Miura , Takashi Kyono
IPC分类号： C30B29/38
CPC分类号： C30B25/02 , C30B25/183 , C30B29/403 , C30B29/406 , H01L21/02389 , H01L21/02458 , H01L21/0254 , H01L21/0262 , H01L29/2003 , H01L33/007
摘要： A GaN substrate comprises a GaN single crystal substrate, an AlxGa1-xN intermediate layer (0
摘要翻译： GaN衬底包括在衬底上外延生长的GaN单晶衬底，Al x x Ga 1-x N中间层（0

2. 发明授权

US08927962B2 Group III nitride semiconductor optical device 有权
标题翻译： III族氮化物半导体光学器件
公开(公告)号：US08927962B2
公开(公告)日：2015-01-06
申请号：US13055690
申请日：2010-02-26
申请人： Masaki Ueno , Yusuke Yoshizumi , Yohei Enya , Takashi Kyono , Katsushi Akita , Takamichi Sumitomo , Masahiro Adachi , Shinji Tokuyama
发明人： Masaki Ueno , Yusuke Yoshizumi , Yohei Enya , Takashi Kyono , Katsushi Akita , Takamichi Sumitomo , Masahiro Adachi , Shinji Tokuyama
IPC分类号： H01L29/66 , H01L33/32 , H01S5/343 , B82Y20/00 , H01L33/16 , H01S5/32
CPC分类号： H01S5/34333 , B82Y20/00 , H01L33/16 , H01L33/32 , H01L33/325 , H01S5/3202
摘要： A group III nitride semiconductor optical device 11a has a group III nitride semiconductor substrate 13 having a main surface 13a forming a finite angle with a reference plane Sc orthogonal to a reference axis Cx extending in a c-axis direction of the group III nitride semiconductor and an active layer 17 of a quantum-well structure, disposed on the main surface 13a of the group III nitride semiconductor substrate 13, including a well layer 28 made of a group III nitride semiconductor and a plurality of barrier layers 29 made of a group III nitride semiconductor. The main surface 13a exhibits semipolarity. The active layer 17 has an oxygen content of at least 1×1017 cm−3 but not exceeding 8×1017 cm−3. The plurality of barrier layers 29 contain an n-type impurity other than oxygen by at least 1×1017 cm−3 but not exceeding 1×1019 cm−3 in an upper near-interface area 29u in contact with a lower interface 28Sd of the well layer 28 on the group III nitride semiconductor substrate side.
摘要翻译： III族氮化物半导体光学元件11a具有III族氮化物半导体衬底13，该III族氮化物半导体衬底13具有与在III族氮化物半导体的c轴方向上延伸的参考轴Cx正交的参考平面Sc形成有限角度的主表面13a; 设置在III族氮化物半导体衬底13的主表面13a上的量子阱结构的有源层17，包括由III族氮化物半导体制成的阱层28和由III族组成的多个势垒层29 氮化物半导体。主表面13a具有半极性。活性层17的氧含量至少为1×1017cm-3，但不超过8×1017cm-3。多个势垒层29在上接近界面区域29u中含有除氧之外的至少1×1017cm-3但不超过1×1019cm-3的n型杂质，该上接近界面区29u与下界面28Sd接触 III族氮化物半导体衬底侧的阱层28。

3. 发明申请

US20120299010A1 GROUP-III NITRIDE SEMICONDUCTOR DEVICE, EPITAXIAL SUBSTRATE, AND METHOD OF FABRICATING GROUP-III NITRIDE SEMICONDUCTOR DEVICE 失效
标题翻译： III族氮化物半导体器件，外延衬底以及制备III族氮化物半导体器件的方法
公开(公告)号：US20120299010A1
公开(公告)日：2012-11-29
申请号：US13484776
申请日：2012-05-31
申请人： Yohei ENYA , Yusuke Yoshizumi , Takashi Kyono , Takamichi Sumitomo , Katsushi Akita , Masaki Ueno , Takao Nakamura
发明人： Yohei ENYA , Yusuke Yoshizumi , Takashi Kyono , Takamichi Sumitomo , Katsushi Akita , Masaki Ueno , Takao Nakamura
IPC分类号： H01L33/32
CPC分类号： H01L21/02458 , B82Y20/00 , H01L21/02389 , H01L21/02433 , H01L21/0254 , H01S5/3202 , H01S5/34333 , H01S2302/00
摘要： A III-nitride semiconductor device has a support base comprised of a III-nitride semiconductor and having a primary surface extending along a first reference plane perpendicular to a reference axis inclined at a predetermined angle with respect to a c-axis of the III-nitride semiconductor, and an epitaxial semiconductor region provided on the primary surface of the support base. The epitaxial semiconductor region includes GaN-based semiconductor layers. The reference axis is inclined at a first angle from the c-axis of the III-nitride semiconductor toward a first crystal axis, either the m-axis or a-axis. The reference axis is inclined at a second angle from the c-axis of the III-nitride semiconductor toward a second crystal axis, the other of the m-axis and a-axis. Morphology of an outermost surface of the epitaxial semiconductor region includes a plurality of pits. A pit density of the pits is not more than 5×104 cm−2.
摘要翻译： III族氮化物半导体器件具有由III族氮化物半导体构成的支撑基底，其具有沿与第一参考平面垂直的第一参考平面延伸的第一表面，所述第一参考平面垂直于相对于III族氮化物的c轴以预定角度倾斜的参考轴半导体和设置在支撑基体的主表面上的外延半导体区域。外延半导体区域包括GaN基半导体层。基准轴从III族氮化物半导体的c轴朝向第一晶轴倾斜第一角度，即m轴或a轴。基准轴从III族氮化物半导体的c轴向第二晶轴倾斜第二角度，m轴和a轴的另一方倾斜。外延半导体区域的最外表面的形态包括多个凹坑。坑的坑密度不大于5×104cm-2。

4. 发明授权

US07955881B2 Method of fabricating quantum well structure 有权
标题翻译：量子阱结构的制作方法
公开(公告)号：US07955881B2
公开(公告)日：2011-06-07
申请号：US12500074
申请日：2009-07-09
申请人： Katsushi Akita , Takamichi Sumitomo , Yohei Enya , Takashi Kyono , Masaki Ueno
发明人： Katsushi Akita , Takamichi Sumitomo , Yohei Enya , Takashi Kyono , Masaki Ueno
IPC分类号： H01L21/00
CPC分类号： H01L21/0262 , H01L21/0242 , H01L21/02458 , H01L21/0254 , H01L33/007 , H01L33/06
摘要： In the method of fabricating a quantum well structure which includes a well layer and a barrier layer, the well layer is grown at a first temperature on a sapphire substrate. The well layer comprises a group III nitride semiconductor which contains indium as a constituent. An intermediate layer is grown on the InGaN well layer while monotonically increasing the sapphire substrate temperature from the first temperature. The group III nitride semiconductor of the intermediate layer has a band gap energy larger than the band gap energy of the InGaN well layer, and a thickness of the intermediate layer is greater than 1 nm and less than 3 nm in thickness. The barrier layer is grown on the intermediate layer at a second temperature higher than the first temperature. The barrier layer comprising a group III nitride semiconductor and the group III nitride semiconductor of the barrier layer has a band gap energy larger than the band gap energy of the well layer.
摘要翻译：在制造包括阱层和势垒层的量子阱结构的方法中，阱层在蓝宝石衬底的第一温度下生长。阱层包含含有铟作为成分的III族氮化物半导体。在InGaN阱层上生长中间层，同时使蓝宝石衬底温度从第一温度单调增加。中间层的III族氮化物半导体的带隙能量大于InGaN阱层的带隙能量，中间层的厚度大于1nm且小于3nm。阻挡层在高于第一温度的第二温度下在中间层上生长。包含III族氮化物半导体的阻挡层和势垒层的III族氮化物半导体的带隙能量大于阱层的带隙能量。

5. 发明授权

US06998284B2 Semiconductor device having quantum well structure, and method of forming the same 失效
标题翻译：具有量子阱结构的半导体器件及其形成方法
公开(公告)号：US06998284B2
公开(公告)日：2006-02-14
申请号：US11057830
申请日：2005-02-15
申请人： Takashi Kyono , Masaki Ueno , Katsushi Akita
发明人： Takashi Kyono , Masaki Ueno , Katsushi Akita
IPC分类号： H01L21/00
CPC分类号： H01L33/32 , B82Y20/00 , H01L33/06 , H01S5/3407 , H01S5/34333
摘要： A method of forming a semiconductor device having a quantum well structure, comprises the steps of: (a) forming a well film at a first temperature, the well film being made of a III-V nitride semiconductor containing nitrogen, indium and gallium; (b) forming a first barrier film on the well film, the first barrier film being made of a III-V nitride semiconductor containing nitrogen, indium and gallium, and an indium composition of the first barrier film being smaller than that of the well film; (c) changing temperature without forming a semiconductor film; and (d) forming a second barrier film at a second temperature higher than the first temperature, the second barrier film being made of a III-V nitride semiconductor on the first barrier film, the first barrier film being formed at a third temperature, the third temperature being equal to or higher than the first temperature, and the third temperature being lower than the second temperature.
摘要翻译：一种形成具有量子阱结构的半导体器件的方法包括以下步骤：（a）在第一温度下形成阱膜，阱膜由含有氮，铟和镓的III-V族氮化物半导体制成; （b）在所述阱膜上形成第一阻挡膜，所述第一阻挡膜由包含氮，铟和镓的III-V族氮化物半导体制成，并且所述第一阻挡膜的铟组合物小于所述阱膜的铟组分 ; （c）不形成半导体膜而改变温度; 和（d）在高于第一温度的第二温度下形成第二阻挡膜，第二阻挡膜由第一阻挡膜上的III-V族氮化物半导体构成，第一阻挡膜形成在第三温度，第三温度等于或高于第一温度，第三温度低于第二温度。

6. 发明申请

US20050199903A1 Semiconductor device having quantum well structure, and method of forming the same 失效
标题翻译：具有量子阱结构的半导体器件及其形成方法
公开(公告)号：US20050199903A1
公开(公告)日：2005-09-15
申请号：US11057830
申请日：2005-02-15
申请人： Takashi Kyono , Masaki Ueno , Katsushi Akita
发明人： Takashi Kyono , Masaki Ueno , Katsushi Akita
IPC分类号： H01L21/20 , H01L21/205 , H01L33/06 , H01L33/32 , H01S5/34 , H01S5/343 , H01L29/24
CPC分类号： H01L33/32 , B82Y20/00 , H01L33/06 , H01S5/3407 , H01S5/34333
摘要： A method of forming a semiconductor device having a quantum well structure, comprises the steps of: (a) forming a well film at a first temperature, the well film being made of a III-V nitride semiconductor containing nitrogen, indium and gallium; (b) forming a first barrier film on the well film, the first barrier film being made of a III-V nitride semiconductor containing nitrogen, indium and gallium, and an indium composition of the first barrier film being smaller than that of the well film; (c) changing temperature without forming a semiconductor film; and (d) forming a second barrier film at a second temperature higher than the first temperature, the second barrier film being made of a III-V nitride semiconductor on the first barrier film, the first barrier film being formed at a third temperature, the third temperature being equal to or higher than the first temperature, and the third temperature being lower than the second temperature.
摘要翻译：一种形成具有量子阱结构的半导体器件的方法包括以下步骤：（a）在第一温度下形成阱膜，阱膜由含有氮，铟和镓的III-V族氮化物半导体制成; （b）在所述阱膜上形成第一阻挡膜，所述第一阻挡膜由包含氮，铟和镓的III-V族氮化物半导体制成，并且所述第一阻挡膜的铟组合物小于所述阱膜的铟组分 ; （c）不形成半导体膜而改变温度; 和（d）在高于第一温度的第二温度下形成第二阻挡膜，第二阻挡膜由第一阻挡膜上的III-V族氮化物半导体构成，第一阻挡膜形成在第三温度，第三温度等于或高于第一温度，第三温度低于第二温度。

7. 发明授权

US08748868B2 Nitride semiconductor light emitting device and epitaxial substrate 失效
标题翻译：氮化物半导体发光器件和外延衬底
公开(公告)号：US08748868B2
公开(公告)日：2014-06-10
申请号：US13294010
申请日：2011-11-10
申请人： Takashi Kyono , Yohei Enya , Katsushi Akita , Masaki Ueno , Yusuke Yoshizumi , Takamichi Sumitomo
发明人： Takashi Kyono , Yohei Enya , Katsushi Akita , Masaki Ueno , Yusuke Yoshizumi , Takamichi Sumitomo
IPC分类号： H01L29/06 , H01L31/00
CPC分类号： H01S5/34333 , B82Y20/00 , H01L21/02389 , H01L21/02458 , H01L21/0254 , H01L21/02573 , H01L21/0262 , H01L21/02661 , H01L33/18 , H01L33/32 , H01S5/2009 , H01S5/22 , H01S5/3201 , H01S5/3211
摘要： For a nitride semiconductor light emitting device, a c-axis vector of hexagonal GaN of a support substrate is inclined to an X-axis direction with respect to a normal axis Nx normal to a primary surface. In a semiconductor region an active layer, a first gallium nitride-based semiconductor layer, an electron block layer, and a second gallium nitride-based semiconductor layer are arranged along the normal axis on the primary surface of the support substrate. A p-type cladding layer is comprised of AlGaN, and the electron block layer is comprised of AlGaN. The electron block layer is subject to tensile strain in the X-axis direction. The first gallium nitride-based semiconductor layer is subject to compressive strain in the X-axis direction. The misfit dislocation density at an interface is smaller than that at an interface. A barrier to electrons at the interface is raised by piezoelectric polarization.
摘要翻译：对于氮化物半导体发光器件，支撑衬底的六边形GaN的c轴矢量相对于垂直于主表面的法线轴Nx相对于X轴方向倾斜。在半导体区域中，在支撑基板的主表面上沿着法线布置有源层，第一氮化镓基半导体层，电子阻挡层和第二氮化镓基半导体层。 p型覆层由AlGaN构成，电子阻挡层由AlGaN构成。电子阻挡层在X轴方向上受到拉伸应变。第一氮化镓基半导体层在X轴方向上受到压应变。界面处的错配位错密度小于界面处的位错密度。在界面处的电子势垒由压电极化引起。

8. 发明授权

US08548021B2 III-nitride semiconductor laser, and method for fabricating III-nitride semiconductor laser 有权
标题翻译： III族氮化物半导体激光器和III族氮化物半导体激光器的制造方法
公开(公告)号：US08548021B2
公开(公告)日：2013-10-01
申请号：US13211858
申请日：2011-08-17
申请人： Kei Fujii , Masaki Ueno , Katsushi Akita , Takashi Kyono , Yusuke Yoshizumi , Takamichi Sumitomo , Yohei Enya
发明人： Kei Fujii , Masaki Ueno , Katsushi Akita , Takashi Kyono , Yusuke Yoshizumi , Takamichi Sumitomo , Yohei Enya
IPC分类号： H01S5/00
CPC分类号： H01S5/34333 , B82Y20/00 , H01L33/16 , H01L33/32 , H01S5/0202 , H01S5/2009 , H01S5/3202 , H01S5/3211 , H01S5/3404 , H01S2304/04
摘要： Provided is a III-nitride semiconductor laser allowing for provision of a low threshold with use of a semipolar plane. A primary surface 13a of a semiconductor substrate 13 is inclined at an angle of inclination AOFF in the range of not less than 50 degrees and not more than 70 degrees toward the a-axis direction of GaN with respect to a reference plane perpendicular to a reference axis Cx along the c-axis direction of GaN. A first cladding layer 15, an active layer 17, and a second cladding layer 19 are provided on the primary surface 13a of the semiconductor substrate 13. The well layers 23a of the active layer 17 comprise InGaN. A polarization degree P in the LED mode of emission from the active layer of the semiconductor laser that reaches lasing is not less than −1 and not more than 0.1. The polarization degree P of the III-nitride semiconductor laser is defined by P=(I1−I2)/(I1+I2), using an electric field component I1 in the X1 direction and an electric field component I2 in the X2 direction of light in the LED mode.
摘要翻译：提供了允许使用半极性平面提供低阈值的III族氮化物半导体激光器。半导体基板13的主表面13a相对于垂直于参考的参考平面朝向a轴方向的不小于50度且不超过70度的范围内以倾斜角AOFF倾斜沿着C轴方向的C x轴。在半导体衬底13的主表面13a上设置第一覆层15，有源层17和第二覆层19.有源层17的阱层23a包括InGaN。来自激光器的半导体激光器的有源层的发光LED的偏振度P不小于-1且不大于0.1。 III族氮化物半导体激光器的偏振度P通过使用X1方向的电场分量I1和X2方向的电场分量I2由P =（I1-I2）/（I1 + I2）定义在LED模式下。

9. 发明授权

US08483251B2 Group III nitride semiconductor laser diode, and method for producing group III nitride semiconductor laser diode 失效
标题翻译： III族氮化物半导体激光二极管，以及III族氮化物半导体激光二极管的制造方法
公开(公告)号：US08483251B2
公开(公告)日：2013-07-09
申请号：US13294378
申请日：2011-11-11
申请人： Yohei Enya , Yusuke Yoshizumi , Takashi Kyono , Katsushi Akita , Masaki Ueno , Takamichi Sumitomo , Takao Nakamura
发明人： Yohei Enya , Yusuke Yoshizumi , Takashi Kyono , Katsushi Akita , Masaki Ueno , Takamichi Sumitomo , Takao Nakamura
IPC分类号： H01S5/00
CPC分类号： H01S5/32341 , B82Y20/00 , H01L21/0254 , H01L21/02573 , H01L21/0262 , H01S5/2009 , H01S5/34333
摘要： Provided is a Group III nitride semiconductor laser diode with a cladding layer capable of providing high optical confinement and carrier confinement. An n-type Al0.08Ga0.92N cladding layer is grown so as to be lattice-relaxed on a (20-21)-plane GaN substrate. A GaN optical guiding layer is grown so as to be lattice-relaxed on the n-type cladding layer. An active layer, a GaN optical guiding layer, an Al0.12Ga0.88N electron blocking layer, and a GaN optical guiding layer are grown so as not to be lattice-relaxed on the optical guiding layer. A p-type Al0.08Ga0.92N cladding layer is grown so as to be lattice-relaxed on the optical guiding layer. A p-type GaN contact layer is grown so as not to be lattice-relaxed on the p-type cladding layer, to produce a semiconductor laser. Dislocation densities at junctions are larger than those at the other junctions.
摘要翻译：提供了具有能够提供高的光学限制和载流子限制的包层的III族氮化物半导体激光二极管。生长n型Al0.08Ga0.92N包覆层，使其在（20-21）面GaN衬底上晶格弛豫。在n型包覆层上生长GaN光引导层以使其晶格弛豫。生长活性层，GaN光引导层，Al0.12Ga0.88N电子阻挡层和GaN光引导层，使得在导光层上不会格子弛豫。生长p型Al0.08Ga0.92N覆层，使其在光导层上格子弛豫。生长p型GaN接触层，以便在p型覆层上不会发生晶格弛豫，以产生半导体激光器。交界处的位错密度大于其他路口的位错密度。

10. 发明授权

US08476615B2 GaN-based semiconductor light emitting device and the method for making the same 失效
标题翻译： GaN系半导体发光元件及其制造方法
公开(公告)号：US08476615B2
公开(公告)日：2013-07-02
申请号：US13295840
申请日：2011-11-14
申请人： Yohei Enya , Takashi Kyono , Takamichi Sumitomo , Katsushi Akita , Masaki Ueno , Takao Nakamura
发明人： Yohei Enya , Takashi Kyono , Takamichi Sumitomo , Katsushi Akita , Masaki Ueno , Takao Nakamura
IPC分类号： H01L29/06
CPC分类号： H01L33/16 , B82Y20/00 , H01L33/32 , H01S5/0014 , H01S5/2009 , H01S5/3202 , H01S5/3403 , H01S5/34333
摘要： A GaN-based semiconductor light emitting device 11a includes a substrate 13 composed of a GaN-based semiconductor having a primary surface 13a tilting from the c-plane toward the m-axis at a tilt angle α of more than or equal to 63 degrees and less than 80 degrees, a GaN-based semiconductor epitaxial region 15, an active layer 17, an electron blocking layer 27, and a contact layer 29. The active layer 17 is composed of a GaN-based semiconductor containing indium. The substrate 13 has a dislocation density of 1×107 cm−2 or less. In the GaN-based semiconductor light emitting device 11a provided with the active layer containing indium, a decrease in quantum efficiency under high current injection can be moderated.
摘要翻译： GaN基半导体发光器件11a包括由GaN基半导体构成的衬底13，该GaN基半导体具有从c面朝向m轴倾斜角度α大于或等于63度的主表面13a;以及低于80度的GaN基半导体外延区域15，有源层17，电子阻挡层27和接触层29.有源层17由包含铟的GaN基半导体构成。基板13的位错密度为1×10 7 cm -2以下。在具有含有铟的有源层的GaN系半导体发光元件11a中，能够缓和高电流注入时的量子效率的降低。

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