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91. 发明授权

US5325253A Stabilization of magnetoresistive transducer using canted exchange bias 失效
标题翻译：使用斜面交换偏置来稳定磁阻传感器
公开(公告)号：US5325253A
公开(公告)日：1994-06-28
申请号：US18612
申请日：1993-02-17
申请人： Mao-Min Chen , Timothy J. Gallagher , Wang: Po-Kang
发明人： Mao-Min Chen , Timothy J. Gallagher , Wang: Po-Kang
IPC分类号： G01R33/09 , G11B5/03 , G11B5/39 , H01L43/08
CPC分类号： G11B5/3932 , G11B5/3935 , G11B5/399
摘要： A magnetoresistive (MR) read transducer and method of fabricating same. A soft magnetic layer and an MR layer extend over a central active region and passive end regions of the transducer. A nonmagnetic spacer layer separates the soft magnetic film layer and MR layer and extends over the central active region and at least part of both passive end regions. An antiferromagnetic layer directly contacts the MR layer only in the end regions and produces an exchange bias field between the antiferromagnetic layer and the MR layer that is oriented at a preselected acute angle to the longitudinal direction of the transducer. This results in the MR layer being oriented at the preselected acute angle and the soft magnetic film layer in the passive end regions being transversely oriented by magnetostatic coupling to the MR layer. To fabricate the transducer, the antiferromagnetic layer is annealed in an external field above the Neel temperature to produce the canted exchange bias field. As a result of the canting, the magnetic moments of the central active region and the passive end regions are matched during a read operation.
摘要翻译：磁阻（MR）读取传感器及其制造方法。软磁层和MR层在传感器的中心有源区和被动端区延伸。非磁性间隔层将软磁性膜层和MR层分离并延伸到中心有源区域和两个被动端区域的至少一部分。反铁磁层仅在端部区域直接接触MR层，并且在反铁磁性层和MR层之间产生交换偏置场，MR层以与传感器的纵向方向成预定的锐角取向。这导致MR层被定向在预选的锐角处，并且被动端区域中的软磁膜层通过静磁耦合到MR层被横向取向。为了制造换能器，反铁磁层在Neel温度以上的外部场中进行退火，产生斜面交换偏置场。作为倾斜的结果，在读取操作期间中心有源区域和被动端部区域的磁矩匹配。

92. 发明授权

US5271802A Method for making a thin film magnetic head having a protective coating 失效
标题翻译：制造具有保护涂层的薄膜磁头的方法
公开(公告)号：US5271802A
公开(公告)日：1993-12-21
申请号：US987509
申请日：1992-12-07
申请人： Henry C. Chang , Mao-Min Chen , Cheng T. Horng , Robert O. Schwenker
发明人： Henry C. Chang , Mao-Min Chen , Cheng T. Horng , Robert O. Schwenker
IPC分类号： G11B5/31 , G11B5/60 , G11B5/71
CPC分类号： G11B5/3106 , G11B5/6005 , Y10T29/49052
摘要： A method for making a magnetic head slider having a protective coating on the rails thereof, the protective coating containing a thin adhesion layer, a thin layer of amorphous hydrogenated carbon, and a thin masking layer. The protective coating is deposited on the air bearing surface of the slider after the thin film magnetic heads are lapped to a chosen dimension, but before the pattern of rails is produced on the air bearing surface. The protective coating protects the magnetic head during the rail fabrication process and in usage in a magnetic recording system protects the magnetic head from wear and corrosion damage.
摘要翻译：一种用于制造在其轨道上具有保护涂层的磁头滑块的方法，所述保护涂层包含薄粘合层，非晶氢化碳薄层和薄掩蔽层。在将薄膜磁头研磨成选定的尺寸之后，但是在空气轴承表面上产生轨道图案之前，保护涂层沉积在滑块的空气支承表面上。保护涂层在轨道制造过程中保护磁头，并且在磁记录系统中使用可保护磁头免受磨损和腐蚀的损害。

93. 发明申请

US20110117677A1 Spacer structure in MRAM cell and method of its fabrication 有权
标题翻译： MRAM单元的间隔结构及其制作方法
公开(公告)号：US20110117677A1
公开(公告)日：2011-05-19
申请号：US12930955
申请日：2011-01-20
申请人： Jun Yuan , Liubo Hong , Mao-Min Chen
发明人： Jun Yuan , Liubo Hong , Mao-Min Chen
IPC分类号： H01L43/12
CPC分类号： H01L43/12 , H01L27/222 , H01L43/08
摘要： Methods are presented for fabricating an MTJ element having a uniform vertical distance between its free layer and a bit line and, in addition, having a protective spacer layer formed abutting the lateral sides of the MTJ element to eliminate leakage currents between MTJ layers and the bit line. Each method forms a dielectric spacer layer on the lateral sides of the MTJ element and, depending on the method, includes an additional layer that protects the spacer layer during etching processes used to form a Cu damascene bit line. At various stages in the process, a dielectric layer is also formed to act as a CMP stop layer so that the capping layer on the MTJ element is not thinned by the CMP process that planarizes the surrounding insulation. Subsequent to planarization, the stop layer is removed by an anisotropic etch of such precision that the MTJ element capping layer is not reduced in thickness and serves to maintain uniform vertical distance between the bit line and the MTJ free layer.
摘要翻译：提出了用于制造在其自由层和位线之间具有均匀垂直距离的MTJ元件的方法，此外，具有邻接MTJ元件的侧面形成的保护间隔层，以消除MTJ层与钻头之间的泄漏电流线。每种方法在MTJ元件的侧面上形成电介质间隔层，并且根据该方法，包括在用于形成Cu镶嵌位线的蚀刻工艺期间保护间隔层的附加层。在该过程的各个阶段，还形成介电层以用作CMP停止层，使得MTJ元件上的覆盖层不会通过使周围绝缘平坦化的CMP工艺变薄。在平坦化之后，通过各向异性蚀刻去除停止层，其精度使得MTJ元件覆盖层的厚度不减小并用于保持位线和MTJ自由层之间的均匀垂直距离。

94. 发明授权

US07446987B2 Composite hard bias design with a soft magnetic underlayer for sensor applications 有权
标题翻译：复合硬偏置设计与传感器应用的软磁底层
公开(公告)号：US07446987B2
公开(公告)日：2008-11-04
申请号：US11016507
申请日：2004-12-17
申请人： Kunliang Zhang , Mao-Min Chen , Chyu-Jiuh Torng , Min Li , Chen-Jung Chien
发明人： Kunliang Zhang , Mao-Min Chen , Chyu-Jiuh Torng , Min Li , Chen-Jung Chien
IPC分类号： G11B5/33 , G11B5/127
CPC分类号： B82Y25/00 , B82Y10/00 , G11B5/3909 , G11B5/3932 , G11B2005/3996
摘要： A hard bias structure for biasing a free layer in a MR element within a magnetic read head is comprised of a soft magnetic underlayer such as NiFe and a hard bias layer comprised of Co78.6Cr5.2Pt16.2 or Co65Cr15Pt20 that are rigidly exchange coupled to ensure a well aligned longitudinal biasing direction with minimal dispersions. The hard bias structure is formed on a BCC seed layer such as CrTi to improve lattice matching. The hard bias structure may be laminated in which each of the underlayers and hard bias layers has a thickness that is adjusted to optimize the total Hc, Mrt, and S values. The present invention encompasses CIP and CPP spin values, MTJ devices, and multi-layer sensors. A larger process window for fabricating the hard bias structure is realized and lower asymmetry output and NBLW (normalized base line wandering) reject rates during a read operation are achieved.
摘要翻译：用于偏置磁读头内的MR元件中的自由层的硬偏压结构由诸如NiFe的软磁性底层和由Co ++ 78.6Cr 5.2构成的硬偏置层组成，或刚性交换耦合以确保良好对准的/SUB>Pt_{16.2 或Co 15 Cr 15 纵向偏置方向最小分散。在诸如CrTi的BCC种子层上形成硬偏压结构以改善晶格匹配。可以层压硬偏压结构，其中每个底层和硬偏压层具有被调节以使总H c，M L t和S的最大值的厚度价值观。本发明包括CIP和CPP旋转值，MTJ装置和多层传感器。实现了用于制造硬偏置结构的更大的工艺窗口，并且实现了在读取操作期间较低的不对称输出和NBLW（归一化的基线漂移）拒绝率。}

95. 发明授权

US07382584B2 Method to increase CCP-CPP GMR output by thermoelectric cooling 失效
标题翻译：通过热电冷却增加CCP-CPP GMR输出的方法
公开(公告)号：US07382584B2
公开(公告)日：2008-06-03
申请号：US11175932
申请日：2005-07-06
申请人： Yue Liu , Daniel G. Abels , Moris Dovek , Min Li , Pokang Wang , Mao-Min Chen
发明人： Yue Liu , Daniel G. Abels , Moris Dovek , Min Li , Pokang Wang , Mao-Min Chen
IPC分类号： G11B5/39 , F25D23/12 , H01L35/28 , G01R33/02
CPC分类号： G11B5/3929 , B82Y10/00 , G11B5/3133 , G11B2005/3996
摘要： The problem of increasing the output signal from a CCP-CPP GMR device without having it overheat has been overcome by placing materials that have different thermoelectric potentials on opposing sides of the spacer layer. Heat from the hot junction is removed at the substrate, which acts as a heat sink, resulting in a net local cooling of the confined current spacer layer, enabling it to operate at both higher input voltage increased reliability.
摘要翻译：通过在间隔层的相对侧放置具有不同热电势的材料来克服增加来自CCP-CPP GMR器件而不使其过热的输出信号的问题。来自热接点的热量在基板处被去除，其作为散热器，导致限流电流间隔层的局部局部冷却，使其能够在较高的输入电压增加的可靠性下工作。

96. 发明申请

US20070266551A1 ABS through aggressive stitching 失效
标题翻译： ABS通过积极的拼接
公开(公告)号：US20070266551A1
公开(公告)日：2007-11-22
申请号：US11881316
申请日：2007-07-26
申请人： Cherng-Chyi Han , Mao-Min Chen , Laurie Lauchlan , Lei Zhang
发明人： Cherng-Chyi Han , Mao-Min Chen , Laurie Lauchlan , Lei Zhang
IPC分类号： G11B5/127 , H04R31/00
CPC分类号： G11B5/33 , Y10T29/49041 , Y10T29/49043 , Y10T29/49044 , Y10T29/49046 , Y10T29/49048 , Y10T29/4906 , Y10T29/49062 , Y10T29/49064
摘要： Aggressive (i.e. tight tolerance) stitching offers several advantages for magnetic write heads but at the cost of some losses during pole trimming. This problem has been overcome by replacing the alumina filler layer, that is used to protect the stitched pole during trimming, with a layer of electroplated material. Because of the superior step coverage associated with the plating method of deposition, pole trimming can then proceed without the introduction of stresses to the stitched pole while it is being trimmed.
摘要翻译：积极（即紧公差）缝合为磁性写入头提供了几个优点，但是在极修整期间以一些损失为代价。通过用一层电镀材料替换用于在修整期间保护缝合极的氧化铝填料层已经克服了这个问题。由于与沉积电镀方法相关的优越的台阶覆盖，因此可以进行极细修剪，而不会在缝合极被修剪时引入应力。

97. 发明授权

US07208807B2 Structure and method to fabricate high performance MTJ devices for MRAM applications 失效
标题翻译：制造用于MRAM应用的高性能MTJ器件的结构和方法
公开(公告)号：US07208807B2
公开(公告)日：2007-04-24
申请号：US11080860
申请日：2005-03-15
申请人： Cheng T. Horng , Ru-Ying Tong , Mao-Min Chen , Liubo Hong , Min Li
发明人： Cheng T. Horng , Ru-Ying Tong , Mao-Min Chen , Liubo Hong , Min Li
IPC分类号： H01L29/82 , H01L43/00
CPC分类号： H01L43/08 , B82Y25/00 , G01R33/093 , G01R33/098 , G11B5/3163 , G11B5/3906 , H01L43/12
摘要： A high performance MTJ in an MRAM array is disclosed in which the bottom conductor has an amorphous Ta capping layer. A key feature is a surfactant layer comprised of oxygen that is formed on the Ta surface. The resulting smooth and flat Ta capping layer promotes a smooth and flat surface in the MTJ layers which are subsequently formed on the surfactant layer. For a 0.3×0.6 micron MTJ bit size, a 35 to 40 Angstrom thick NiFe(18%) free layer, an AlOx barrier layer generated from a ROX oxidation of an 9 to 10 Angstrom thick Al layer, and a Ru/Ta/Ru capping layer are employed to give a dR/R of >40% and an RA of about 4000 ohm-μm2. The MTJ configuraton is extendable to a 0.2×0.4 micron MTJ bit size.
摘要翻译：公开了一种MRAM阵列中的高性能MTJ，其中底部导体具有无定形Ta覆盖层。关键特征是由在Ta表面上形成的氧构成的表面活性剂层。得到的平滑且平坦的Ta覆盖层促进MTJ层中平滑且平坦的表面，随后在表面活性剂层上形成。对于0.3×0.6微米的MTJ位尺寸，35至40埃厚的NiFe（18％）自由层，由9至10埃厚的Al层的ROX氧化产生的AlO x势垒层，以及Ru / Ta / 使用Ru覆盖层来产生大于40％的dR / R和约4000欧姆 - 姆2的RA。 MTJ配置可扩展到0.2x0.4微米的MTJ位大小。

98. 发明申请

US20060164766A1 Exchange bias structure for abutted junction GMR sensor 失效
公开(公告)号：US20060164766A1
公开(公告)日：2006-07-27
申请号：US11375323
申请日：2006-03-14
申请人： Yun-Fei Li , Hui-Chuan Wang , Chyu-Jiuh Torng , Cherng-Chyi Han , Mao-Min Chen
发明人： Yun-Fei Li , Hui-Chuan Wang , Chyu-Jiuh Torng , Cherng-Chyi Han , Mao-Min Chen
IPC分类号： G11B5/33 , B05D5/12 , G11B5/127
CPC分类号： B82Y25/00 , B82Y10/00 , G11B5/3163 , G11B5/3903 , G11B5/3932 , G11B2005/3996 , Y10T29/49044 , Y10T29/49046 , Y10T29/49048 , Y10T29/49052
摘要： Although it is known that exchange bias can be utilized in abutted junctions for longitudinal stabilization, a relatively large moment is needed to pin down the sensor edges effectively. Due to the inverse dependence of the exchange bias on the magnetic layer thickness, a large exchange bias has been difficult to achieve by the prior art. This problem has been solved by introducing a structure in which the magnetic moment of the bias layer has been approximately doubled by pinning it from both above and below through exchange with antiferromagnetic layers. Additionally, since the antiferromagnetic layer is in direct abutted contact with the free layer, it acts directly to help stabilize the sensor edge, which is an advantage over the traditional magnetostatic pinning that had been used.

99. 发明授权

US07061730B2 Robust hard bias/conductor lead structures for future GMR heads 失效
标题翻译：坚固的硬偏置/导体引线结构，用于未来的GMR磁头
公开(公告)号：US07061730B2
公开(公告)日：2006-06-13
申请号：US10649456
申请日：2003-08-27
申请人： Cheng T. Horng , Mao-Min Chen , Chen-Jung Chien , Cherng-Chyi Han , Chyu-Jiuh Torng , Ru-Ying Tong
发明人： Cheng T. Horng , Mao-Min Chen , Chen-Jung Chien , Cherng-Chyi Han , Chyu-Jiuh Torng , Ru-Ying Tong
IPC分类号： G11B5/39
CPC分类号： B82Y25/00 , G11B5/4853 , G11B5/486 , H01F10/324 , H01F10/3268
摘要： A spin-valve magnetoresistive read element has a thin conductive lead layer of high sheet conductivity, high hardness, high melting point, high corrosion resistance and lacking the propensity for smearing, oozing, electromigration and nodule formation. Said lead layer is formed upon the hard magnetic longitudinal bias layer of an abutted junction spin-valve type magnetoresistive read head and said read head is therefore suitable for reading high density recorded disks at high RPM.
摘要翻译：自旋阀磁阻读取元件具有导电性高，硬度高，熔点高，耐腐蚀性高，缺乏涂抹，渗出，电迁移和结核形成倾向的薄导电铅层。所述引线层形成在接触自旋阀型磁阻读取头的硬磁纵向偏置层上，因此所述读头适用于以高RPM读取高密度记录盘。

100. 发明授权

US07038880B2 Method to make a planar writer with low D.C. coil resistance 失效
标题翻译：具有低直流线圈电阻的平面刻录机的方法
公开(公告)号：US07038880B2
公开(公告)日：2006-05-02
申请号：US10633132
申请日：2003-08-01
申请人： Cherng-Chyi Han , Danning Yang , Mao-Min Chen
发明人： Cherng-Chyi Han , Danning Yang , Mao-Min Chen
IPC分类号： G11B5/147
CPC分类号： G11B5/3136 , G11B5/127 , G11B5/147 , G11B5/31 , G11B5/3196
摘要： An inductive-type write head and its method of fabrication are disclosed. The write head has a vertically separated two-element planar coil of reduced resistance which is the result of forming the lower of the two coils with windings of a greater height and substantially larger cross-sectional area than those of the upper coil. The formation of a lower coil with greater height is possible because of a surface planarization that allows separating the coils by an alumina layer of minimal thickness. This method allows the reduction of coil resistance without the necessity of enlarging the head dimensions. The reduced resistance results in lower power consumption and the elimination of pole tip protrusion caused by excessive heating during operation.
摘要翻译：公开了一种电感式写入头及其制造方法。写头具有具有降低的电阻的垂直分离的两元件平面线圈，其是形成两个线圈中较低的线圈的结果，其绕组具有比上部线圈的更大的高度和大得多的横截面积的绕组。由于表面平坦化，允许通过最小厚度的氧化铝层分离线圈，所以形成较高高度的下线圈是可能的。该方法允许减小线圈电阻而不需要扩大头部尺寸。降低的电阻导致较低的功率消耗和由于操作期间的过度加热而导致的极尖突起的消除。

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