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91. 发明授权

US06633392B1 X-ray reflectance system to determine suitability of SiON ARC layer 有权
标题翻译： X射线反射系统，以确定SiON ARC层的适用性
公开(公告)号：US06633392B1
公开(公告)日：2003-10-14
申请号：US10052142
申请日：2002-01-17
申请人： Bhanwar Singh , Arvind Halliyal , Ramkumar Subramanian
发明人： Bhanwar Singh , Arvind Halliyal , Ramkumar Subramanian
IPC分类号： G01B1128
CPC分类号： H01L21/67253 , G01N23/20 , H01L22/26
摘要： One aspect of the present invention relates to a method to facilitate formation of an oxide portion of an anti-reflective layer on a substrate. The method involves the steps of forming an oxidized portion of an anti-reflective coating over an anti-reflective layer disposed on the substrate; reflecting a beam of x-ray radiation at the oxidized portion; generating a measurement signal based on the reflected portion of the light beam; and determining a thickness of the oxidized portion based on the measurement signal while the oxidized portion is being formed at the substrate.
摘要翻译：本发明的一个方面涉及一种便于在基底上形成抗反射层的氧化物部分的方法。该方法包括以下步骤：在设置在基底上的抗反射层上形成抗反射涂层的氧化部分; 在氧化部分反射一束x射线辐射; 基于所述光束的反射部分生成测量信号; 并且在氧化部分形成在基板上的同时基于测量信号确定氧化部分的厚度。

92. 发明授权

US06629786B1 Active control of developer time and temperature 失效
标题翻译：主动控制显影时间和温度
公开(公告)号：US06629786B1
公开(公告)日：2003-10-07
申请号：US09845232
申请日：2001-04-30
申请人： Bharath Rangarajan , Michael K. Templeton , Bhanwar Singh , Ramkumar Subramanian
发明人： Bharath Rangarajan , Michael K. Templeton , Bhanwar Singh , Ramkumar Subramanian
IPC分类号： G03D500
CPC分类号： G03D5/00
摘要： A system for regulating the time and temperature of a development process is provided. The system includes one or more light sources, each light source directing light to one or more gratings being developed on a wafer. Light reflected from the gratings is collected by a measuring system, which processes the collected light. Light passing through the gratings may similarly be collected by the measuring system, which processes the collected light. The collected light is indicative of the progress of development of the respective portions of the wafer. The measuring system provides progress of development related data to a processor that determines the progress of development of the respective portions of the wafer. The system also includes a plurality of heating devices, each heating device corresponds to a respective portion of the developer and provides for the heating thereof. The processor selectively controls the heating devices so as to regulate temperature of the respective portions of the wafer.
摘要翻译：提供了一种用于调节开发过程的时间和温度的系统。该系统包括一个或多个光源，每个光源将光引导到在晶片上显影的一个或多个光栅。从光栅反射的光被测量系统收集，该系统处理收集的光。通过光栅的光可以类似地由处理所收集的光的测量系统收集。所收集的光表示晶片的各个部分的显影进展。该测量系统提供开发相关数据的进展到处理器，该处理器确定晶片的相应部分的开发进度。该系统还包括多个加热装置，每个加热装置对应于显影剂的相应部分并提供其加热。处理器选择性地控制加热装置，以调节晶片各部分的温度。

93. 发明授权

US06559446B1 System and method for measuring dimensions of a feature having a re-entrant profile 有权
标题翻译：用于测量具有入口轮廓的特征的尺寸的系统和方法
公开(公告)号：US06559446B1
公开(公告)日：2003-05-06
申请号：US09670775
申请日：2000-09-27
申请人： Bryan K. Choo , Bhanwar Singh
发明人： Bryan K. Choo , Bhanwar Singh
IPC分类号： G01N23225
CPC分类号： G01N23/225
摘要： A system and method are disclosed for measuring and/or imaging a feature having a re-entrant cross-sectional profile. Beams are emitted onto the feature and substrate at different angles during corresponding measurement intervals. An feature data set of the feature is characterized for each measurement interval. The data associated with each measurement interval are aggregated to provide a cross-sectional representation of the having dimensions proportional to the feature. As a result, a more accurate feature profile may be determined, including a cross-sectional dimension of the re-entrant feature at the juncture between the feature and substrate.
摘要翻译：公开了一种用于测量和/或成像具有重入横截面轮廓的特征的系统和方法。光束在相应的测量间隔内以不同的角度发射到特征和基底上。特征的特征数据集的特征在于每个测量间隔。与每个测量间隔相关联的数据被聚合以提供具有与特征成比例的尺寸的横截面表示。结果，可以确定更准确的特征轮廓，包括在特征和基底之间的交界处的入侵特征的横截面尺寸。

94. 发明授权

US06455332B1 Methodology to mitigate electron beam induced charge dissipation on polysilicon fine patterning 失效
标题翻译：减少多晶硅精细图案化后电子束感应电荷耗散的方法
公开(公告)号：US06455332B1
公开(公告)日：2002-09-24
申请号：US09564406
申请日：2000-05-01
申请人： Bhanwar Singh , Michael Templeton
发明人： Bhanwar Singh , Michael Templeton
IPC分类号： H01L2100
CPC分类号： H01L22/34
摘要： A method of making and using a reference wafer and a metrology system to calibrate tools in a photolithographic system. The reference wafer includes a silicon substrate, a dielectric or insulating layer disposed above the silicon substrate and a pattern disposed above the insulating layer. The pattern is coupled to the silicon substrate and the silicon substrate acts as a ground for the pattern. As a result, charge buildup on the pattern is mitigated since excess charge is dissipated into the silicon substrate.
摘要翻译：制造和使用参考晶片和计量系统来校准光刻系统中的工具的方法。参考晶片包括硅衬底，设置在硅衬底上方的电介质层或绝缘层以及设置在绝缘层之上的图案。该图案耦合到硅衬底，并且硅衬底用作图案的接地。结果，由于过量的电荷消散到硅衬底中，因此减轻了图案上的电荷积累。

95. 发明授权

US06448097B1 Measure fluorescence from chemical released during trim etch 失效
标题翻译：测量在修剪蚀刻期间释放的化学物质的荧光
公开(公告)号：US06448097B1
公开(公告)日：2002-09-10
申请号：US09911236
申请日：2001-07-23
申请人： Bhanwar Singh , Bharath Rangarajan , Ramkumar Subramanian
发明人： Bhanwar Singh , Bharath Rangarajan , Ramkumar Subramanian
IPC分类号： H01L3126
CPC分类号： G01N21/64 , G01N2021/6417 , H01L22/26
摘要： A system and method is provided for determining and controlling development of a semiconductor substrate employing fluorescence spectroscopy. One aspect of the invention relates to a system and method employing fluorescence spectroscopy to facilitate control of a chemical trim etch process during development of a photoresist material layer. The chemical trim etch process comprises applying a trim compound or material to a patterned photoresist. The trim compound or material is diffusable into the sides and top of the patterned resist. The diffused regions of the resist are soluble in a developer, which facilitates creating smaller features in the patterned photoresist. The fluorescence spectroscopy system can be employed to measure isolated and dense gratings or CDs and use the evolution of the CD to determine when to terminate the chemical trim process.
摘要翻译：提供了一种使用荧光光谱法确定和控制半导体衬底的开发的系统和方法。本发明的一个方面涉及使用荧光光谱学来促进在光致抗蚀剂材料层的显影期间控制化学修剪蚀刻工艺的系统和方法。化学修剪蚀刻工艺包括将修剪化合物或材料施加到图案化的光致抗蚀剂上。修整组合物或材料可扩散到图案化抗蚀剂的侧面和顶部。抗蚀剂的扩散区域可溶于显影剂，这有助于在图案化的光致抗蚀剂中产生更小的特征。荧光光谱系统可用于测量孤立和致密的光栅或CD，并使用CD的演变来确定何时终止化学修饰过程。

96. 发明授权

US06441349B1 System for facilitating uniform heating temperature of photoresist 失效
标题翻译：用于促进光刻胶均匀加热温度的系统
公开(公告)号：US06441349B1
公开(公告)日：2002-08-27
申请号：US09558643
申请日：2000-04-26
申请人： Bharath Rangarajan , Bhanwar Singh , Sanjay K. Yedur
发明人： Bharath Rangarajan , Bhanwar Singh , Sanjay K. Yedur
IPC分类号： H05B368
CPC分类号： H01L21/67103
摘要： A system and method for facilitating uniform heating temperature of a material is provided. The material may be a photoresist, a top or bottom anti-reflective coating, a low K dielectric material, SOG or other spin-on material. The system can include at least one heating element and a heat transfer fluid, the heating element heating the heat transfer fluid, which in turn heats the material. The transfer fluid more evenly distributes the heat from the heating element, which can have hot and cold spots at the material.
摘要翻译：提供了一种用于促进材料的均匀加热温度的系统和方法。该材料可以是光致抗蚀剂，顶部或底部抗反射涂层，低K电介质材料，SOG或其它旋涂材料。该系统可以包括至少一个加热元件和传热流体，该加热元件加热该传热流体，该热传导流体依次加热该材料。传输流体更均匀地分配来自加热元件的热量，其可以在材料上具有热点和冷点。

97. 发明授权

US06423650B1 Ultra-thin resist coating quality by increasing surface roughness of the substrate 有权
公开(公告)号：US06423650B1
公开(公告)日：2002-07-23
申请号：US09371715
申请日：1999-08-09
申请人： Marina V. Plat , Christopher F. Lyons , Michael K. Templeton , Bhanwar Singh
发明人： Marina V. Plat , Christopher F. Lyons , Michael K. Templeton , Bhanwar Singh
IPC分类号： H01L2131
摘要： In one embodiment, the present invention relates to a method of processing a semiconductor substrate, involving the steps of providing the semiconductor substrate having an upper surface; roughening the upper surface of the semiconductor substrate so that the upper surface of the semiconductor substrate has an Rtm of about 10 Å or more; and depositing an ultra-thin photoresist on the upper surface of the semiconductor substrate, the ultra-thin photoresist having a thickness of about 2,000 Å or less.

98. 发明授权

US06335152B1 Use of RTA furnace for photoresist baking 有权
标题翻译：使用RTA炉进行光刻胶烘烤
公开(公告)号：US06335152B1
公开(公告)日：2002-01-01
申请号：US09564408
申请日：2000-05-01
申请人： Ramkumar Subramanian , Bharath Rangarajan , Michael K. Templeton , Bhanwar Singh
发明人： Ramkumar Subramanian , Bharath Rangarajan , Michael K. Templeton , Bhanwar Singh
IPC分类号： G03F738
CPC分类号： G03F7/38
摘要： In one embodiment, the present invention relates to a method of processing an irradiated photoresist involving the steps of placing a substrate having the irradiated photoresist thereon at a first temperature in a rapid thermal anneal furnace; heating the substrate having the irradiated photoresist thereon to a second temperature within about 0.1 seconds to about 10 seconds; cooling the substrate having the irradiated photoresist thereon to a third temperature in a rapid thermal annealing furnace within about 0.1 seconds to about 10 seconds; and developing the irradiated photoresist, wherein the second temperature is higher than the first temperature and the third temperature. In another embodiment, the present invention relates to a system of processing a photoresist, containing a source of actinic radiation and a mask for selectively irradiating a photoresist; a rapid thermal annealing furnace for rapidly heating and rapidly cooling a selectively irradiated photoresist, wherein the rapid heating and rapid cooling are independently conducted within about 0.1 seconds to about 10 seconds; and a developer for developing a rapid thermal annealing furnace heated and selectively irradiated photoresist into a patterned photoresist.
摘要翻译：在一个实施方案中，本发明涉及一种处理被照射的光致抗蚀剂的方法，包括以下步骤：在快速热退火炉中将具有照射光致抗蚀剂的基底在第一温度下放置; 将其上具有照射的光致抗蚀剂的基板加热至约0.1秒至约10秒的第二温度; 将快速热退火炉中具有照射光致抗蚀剂的基板冷却至约0.1秒至约10秒的第三温度; 并且显影所述被照射的光致抗蚀剂，其中所述第二温度高于所述第一温度和所述第三温度。在另一个实施方案中，本发明涉及一种处理含有光化辐射源的光致抗蚀剂的系统和用于选择性地照射光致抗蚀剂的掩模; 快速热退火炉，用于快速加热和快速冷却选择性照射的光致抗蚀剂，其中快速加热和快速冷却在约0.1秒至约10秒内独立进行; 以及用于将快速热退火炉加热并选择性地照射光致抗蚀剂的显影剂加工成图案化的光致抗蚀剂。

99. 发明授权

US06245493B1 Method for reducing surface reflectivity by increasing surface roughness 有权
标题翻译：通过增加表面粗糙度来降低表面反射率的方法
公开(公告)号：US06245493B1
公开(公告)日：2001-06-12
申请号：US09205738
申请日：1998-12-04
申请人： Bhanwar Singh , Bharath Rangarajan , Sanjay K. Yedur , Michael K. Templeton , Christopher F. Lyons
发明人： Bhanwar Singh , Bharath Rangarajan , Sanjay K. Yedur , Michael K. Templeton , Christopher F. Lyons
IPC分类号： G03F700
CPC分类号： H01L21/0276 , G03F7/091 , G03F7/16 , H01L21/3105
摘要： A method for creating a roughened surface on a material exposed to light during a photolithographic process is provided. The roughened surface is created on a surface of the material via a plasma etch process. The roughened surface diffuses light incident to the material such that the diffused light causes insubstantial damage to a photoresist subsequently formed on the material.
摘要翻译：提供了一种在光刻过程中在暴露于光的材料上产生粗糙表面的方法。通过等离子体蚀刻工艺在材料的表面上形成粗糙表面。粗糙表面扩散入射到材料的光，使得漫射的光对随后在材料上形成的光致抗蚀剂造成非实质的损坏。

100. 发明授权

US06238830B1 Active control of temperature in scanning probe lithography and maskless lithograpy 有权
标题翻译：扫描探针光刻和无掩模光刻中主动控制温度
公开(公告)号：US06238830B1
公开(公告)日：2001-05-29
申请号：US09429994
申请日：1999-10-29
申请人： Bharath Rangarajan , Michael K. Templeton , Bhanwar Singh
发明人： Bharath Rangarajan , Michael K. Templeton , Bhanwar Singh
IPC分类号： G03F900
CPC分类号： G03F7/70875 , G01Q30/10 , G01Q80/00 , H01J2237/31759 , Y10S977/855
摘要： A system for monitoring and regulating a photoresist temperature in a maskless lithography pattern transfer process is disclosed. The system includes a photoresist layer overlying a substrate and a material associated with the photoresist layer, wherein the material exhibits a transformation over variations in temperature. The system also includes a detection system for detecting the transformation in the material and a processor operatively coupled to the detection system. The processor receives information associated with the detected transformation and uses the information to control a tool being used for the pattern transfer, thereby reducing variations in temperature in the resist during pattern transfer. In addition, a method of monitoring and regulating a photoresist temperature in a maskless lithography pattern transfer process is disclosed. The method includes associating a material having a characteristic which varies over variations in temperature with a photoresist layer which overlies a substrate and detecting the characteristic during the pattern transfer process. Once detected a temperature of a portion of the photoresist layer is determined using the detected characteristic and an operation of a writing tool which performs the pattern transfer process in response to the photoresist layer temperature is controlled in response thereto.
摘要翻译：公开了一种用于在无掩模光刻图案转印工艺中监测和调节光刻胶温度的系统。该系统包括覆盖衬底的光致抗蚀剂层和与光致抗蚀剂层相关联的材料，其中材料表现出与温度变化的转变。该系统还包括用于检测材料中的变换的检测系统和可操作地耦合到检测系统的处理器。处理器接收与检测到的变换相关联的信息，并使用该信息来控制用于图案转印的工具，由此减少图案转印期间抗蚀剂的温度变化。此外，公开了一种在无掩模光刻图案转印工艺中监测和调节光刻胶温度的方法。该方法包括将具有随温度变化变化的特性的材料与覆盖在衬底上的光致抗蚀剂层相关联，并且在图案转移过程期间检测特性。一旦检测到，使用检测到的特性确定光刻胶层的一部分的温度，并响应于光致抗蚀剂层温度来控制执行图案转印处理的写入工具的操作。

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