会员体验
专利管家(专利管理)
工作空间(专利管理)
风险监控(情报监控)
数据分析(专利分析)
侵权分析(诉讼无效)
联系我们
交流群
官方交流:
QQ群: 891211   
微信请扫码    >>>
现在联系顾问~
热词
    • 94. 发明申请
    • Multi-bit ROM cell, for storing one of n>4 possible states and having bi-directional read, an array of such cells, and a method for making the array
    • 用于存储n> 4个可能状态之一并且具有双向读取的多位ROM单元,这样的单元的阵列,以及用于制作阵列的方法
    • US20050231993A1
    • 2005-10-20
    • US11157318
    • 2005-06-20
    • Bomy ChenKai YueDana LeeFeng Gao
    • Bomy ChenKai YueDana LeeFeng Gao
    • G11C11/56G11C17/00G11C17/12H01L21/8236H01L21/8246H01L27/112
    • H01L27/112G11C11/5692G11C17/12H01L27/1126H01L27/11266
    • A array of multi-bit Read Only Memory (ROM) cells is in a semiconductor substrate of a first conductivity type with a first concentration. Each ROM cell has a first and second regions of a second conductivity type spaced apart from one another in the substrate. A channel is between the first and second regions. The channel has three portions, a first portion, a second portion and a third portion. A gate is spaced apart and is insulated from at least the second portion of the channel. Each ROM cell has one of a plurality of N possible states, where N is greater than 2. The state of each ROM cell is determined by the existence or absence of extensions or halos that are formed in the first portion of the channel and adjacent to the first region and/or in the third portion of the channel adjacent to the second region. These extensions and halos are formed at the same time that extensions or halos are formed in MOS transistors in other parts of the integrated circuit device, thereby reducing cost. The array of ROM cells are arranged in a plurality of rows and columns, with ROM cells in the same row having their gates connected together. ROM cells in the same column have the first regions connected in a common first column, and second regions connected in common second column. Finally, ROM cells in adjacent columns to one side share a common first column, and cells in adjacent columns to another side share a common second column.
    • 多位只读存储器(ROM)单元的阵列位于具有第一浓度的第一导电类型的半导体衬底中。 每个ROM单元具有在基板中彼此间隔开的第二导电类型的第一和第二区域。 通道在第一和第二区域之间。 通道具有三个部分,第一部分,第二部分和第三部分。 门间隔开并与通道的至少第二部分绝缘。 每个ROM单元具有多个N个可能状态中的一个,其中N大于2.每个ROM单元的状态由存在或不存在在通道的第一部分中形成并与通道的第一部分相邻 第一区域和/或与第二区域相邻的通道的第三部分。 在集成电路器件的其他部分的MOS晶体管中形成扩展或光晕的同时形成这些扩展和光晕,从而降低成本。 ROM单元的阵列被布置成多个行和列,其中同一行中的ROM单元的门连接在一起。 同一列中的ROM单元具有连接在公共第一列中的第一区域和连接在公共第二列中的第二区域。 最后,一侧的相邻列中的ROM单元共享一个共同的第一列,另一侧的相邻列中的单元格共享第二列。
    • 96. 发明申请
    • Multi-bit ROM cell, for storing one of N>4 possible states and having bi-directional read, an array of such cells, and a method for making the array
    • 用于存储N> 4个可能状态之一并且具有双向读取的多位ROM单元,这样的单元的阵列,以及用于制作阵列的方法
    • US20050036351A1
    • 2005-02-17
    • US10642079
    • 2003-08-14
    • Bomy ChenKai YueDana LeeFeng Gao
    • Bomy ChenKai YueDana LeeFeng Gao
    • G11C11/56G11C17/00G11C17/12H01L21/8236H01L21/8246H01L27/112
    • H01L27/112G11C11/5692G11C17/12H01L27/1126H01L27/11266
    • A array of multi-bit Read Only Memory (ROM) cells is in a semiconductor substrate of a first conductivity type with a first concentration. Each ROM cell has a first and second regions of a second conductivity type spaced apart from one another in the substrate. A channel is between the first and second regions. The channel has three portions, a first portion, a second portion and a third portion. A gate is spaced apart and is insulated from at least the second portion of the channel. Each ROM cell has one of a plurality of N possible states, where N is greater than 2. The state of each ROM cell is determined by the existence or absence of extensions or halos that are formed in the first portion of the channel and adjacent to the first region and/or in the third portion of the channel adjacent to the second region. These extensions and halos are formed at the same time that extensions or halos are formed in MOS transistors in other parts of the integrated circuit device, thereby reducing cost. The array of ROM cells are arranged in a plurality of rows and columns, with ROM cells in the same row having their gates connected together. ROM cells in the same column have the first regions connected in a common first column, and second regions connected in common second column. Finally, ROM cells in adjacent columns to one side share a common first column, and cells in adjacent columns to another side share a common second column.
    • 多位只读存储器(ROM)单元的阵列位于具有第一浓度的第一导电类型的半导体衬底中。 每个ROM单元具有在基板中彼此间隔开的第二导电类型的第一和第二区域。 通道在第一和第二区域之间。 通道具有三个部分,第一部分,第二部分和第三部分。 门间隔开并与通道的至少第二部分绝缘。 每个ROM单元具有多个N个可能状态中的一个,其中N大于2.每个ROM单元的状态由存在或不存在在通道的第一部分中形成并与通道的第一部分相邻 第一区域和/或与第二区域相邻的通道的第三部分。 在集成电路器件的其他部分的MOS晶体管中形成扩展或光晕的同时形成这些扩展和光晕,从而降低成本。 ROM单元的阵列被布置成多个行和列,其中同一行中的ROM单元的门连接在一起。 同一列中的ROM单元具有连接在公共第一列中的第一区域和连接在公共第二列中的第二区域。 最后,一侧的相邻列中的ROM单元共享一个共同的第一列,另一侧的相邻列中的单元格共享第二列。
    • 99. 发明授权
    • Interactive eyewear selection system
    • 互动眼镜选择系统
    • US06508553B2
    • 2003-01-21
    • US09854861
    • 2001-05-14
    • Feng GaoWei Li
    • Feng GaoWei Li
    • A61B304
    • G02C13/005G02C13/003
    • A method of determining eyeglass frame parameters from a digital image of the person's face and a digital image of an eyeglass frame. The method comprises the steps of: (a) providing a digital image of the person's face; (b) determining a physical scale of the face using a scaling factor; (c) locating center points P1, P2 of the left and right irises in the face image, and determining a pupil midpoint Pc; (d) providing a digital image of an eyeglass frame; (e) adjusting, if necessary, the size of the frame to the physical scale of the face; (f) combining the frame and face images such that the frame is superimposed on the face; (g) aligning the frame and face in accordance with the frame center point fc and the pupil midpoint Pc; and (h) determining the frame parameters.
    • 一种从人脸的数字图像和眼镜框的数字图像确定眼镜框参数的方法。 该方法包括以下步骤:(a)提供人脸的数字图像; (b)使用缩放因子确定面部的物理尺度; (c)在面部图像中定位左右虹膜的中心点P1,P2,并确定瞳孔中点Pc; (d)提供眼镜架的数字图像; (e)如果需要,调整框架的尺寸到面部的物理尺度; (f)组合帧和脸部图像,使得帧叠加在脸部上; (g)根据帧中心点fc和瞳孔中点Pc对准框架和面部; 和(h)确定帧参数。
    • 100. 发明授权
    • Gas distribution system for a CVD processing chamber
    • 用于CVD处理室的气体分配系统
    • US06486081B1
    • 2002-11-26
    • US09449203
    • 1999-11-24
    • Tetsuya IshikawaPadmanabhan KrishnarajFeng GaoAlan W. CollinsLily Pang
    • Tetsuya IshikawaPadmanabhan KrishnarajFeng GaoAlan W. CollinsLily Pang
    • H01L2131
    • C23C16/45514C23C16/401C23C16/4411C23C16/455C23C16/45563C23C16/45578C23C16/507H01J37/3244H01L21/67069
    • The present invention provides an apparatus for depositing a film on a substrate comprising a processing chamber, a substrate support member disposed within the chamber, a first gas inlet, a second gas inlet, a plasma generator and a gas exhaust. The first gas inlet provides a first gas at a first distance from an interior surface of the chamber, and the second gas inlet provides a second gas at a second distance that is closer than the first distance from the interior surface of the chamber. Thus, the second gas creates a higher partial pressure adjacent the interior surface of the chamber to significantly reduce deposition from the first gas onto the interior surface. The present invention also provides a method for depositing a FSG film on a substrate comprising: introducing first gas through a first gas inlet at a first distance from an interior surface of the chamber, and introducing a second gas through a second gas inlet at a second distance from the interior surface of the chamber, wherein the second gas creates a higher partial pressure adjacent the interior surface of the chamber to prevent deposition from the first gas on the interior surface. Alternatively, the first gas is introduced at a different angle from the second gas with respect to a substrate surface.
    • 本发明提供一种用于在基板上沉积膜的装置,包括处理室,设置在室内的基板支撑件,第一气体入口,第二气体入口,等离子体发生器和排气。 第一气体入口从腔室的内表面提供第一距离的第一气体,并且第二气体入口提供第二距离离第二距离距离腔室内表面的第一距离。 因此,第二气体在室的内表面附近产生较高的分压,以显着地减少从第一气体到内表面的沉积。 本发明还提供了一种用于在衬底上沉积FSG膜的方法,包括:将第一气体通过第一距离腔室的内表面的第一气体入口引入,并将第二气体通过第二气体入口引入第二气体 距离室的内表面的距离,其中第二气体在室的内表面附近产生较高的分压,以防止内表面上的第一气体沉积。 或者,第一气体相对于衬底表面以与第二气体不同的角度被引入。