专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

91. 发明申请

US20110097904A1 METHOD FOR REPAIRING LOW-K DIELECTRIC DAMAGE 审中-公开
标题翻译：修复低K电介质损伤的方法
公开(公告)号：US20110097904A1
公开(公告)日：2011-04-28
申请号：US12604224
申请日：2009-10-22
申请人： Stephen M. Sirard , Kenji Takeshita , Andrew D. Bailey, III
发明人： Stephen M. Sirard , Kenji Takeshita , Andrew D. Bailey, III
IPC分类号： H01L21/3065
CPC分类号： H01L21/3105 , H01L21/76814 , H01L21/76826
摘要： A method for repairing damage to a silicon based low-k dielectric layer with organic compounds, where damage replaces a methyl attached to silicon with a hydroxyl attached to silicon is provided. A repair gas comprising CH4 gas is provided. The repair gas is formed into a plasma, while maintaining a pressure below 50 mTorr. Hydroxyl attached to silicon is replaced with methyl from the plasma formed by the repair gas.
摘要翻译：提供了用有机化合物修复对基于硅的低k电介质层的损伤的方法，其中损伤用连接到硅上的羟基连接到硅上的甲基替代。提供了包含CH 4气体的修复气体。将修复气体形成为等离子体，同时保持低于50mTorr的压力。与由修复气体形成的等离子体中的被甲基取代的羟基被甲基取代。

92. 发明申请

US20100253224A1 MODULATED MULTI-FREQUENCY PROCESSING METHOD 有权
标题翻译：调制多频处理方法
公开(公告)号：US20100253224A1
公开(公告)日：2010-10-07
申请号：US12621590
申请日：2009-11-19
申请人： Alexei Marakhtanov , Eric Hudson , Rajhinder Dhindsa , Andrew D. Bailey, III
发明人： Alexei Marakhtanov , Eric Hudson , Rajhinder Dhindsa , Andrew D. Bailey, III
IPC分类号： H05B31/26
CPC分类号： H01L21/3065 , H01J37/32009 , H01J37/32137 , H01J37/32146 , H01J2237/334 , H01J2237/3348
摘要： A method is provided for operating a processing system having a space therein arranged to receive a gas and an electromagnetic field generating portion operable to generate an electromagnetic field within the space. The method includes providing a gas into the space, and operating the electromagnetic field generating portion with a driving potential to generate an electromagnetic field within the space to transform at least a portion of the gas into plasma. The driving potential as a function of time is based on a first potential function portion and a second potential function portion. The first potential function portion comprises a first continuous periodic portion having a first amplitude and a first frequency. The second potential function portion comprises a second periodic portion having an maximum amplitude portion, and minimum amplitude portion and a duty cycle. The maximum amplitude portion is a higher amplitude than the minimum amplitude portion. The duty cycle is the ratio of a duration of the maximum amplitude portion to the sum of the duration of the maximum amplitude portion and the duration of the minimum amplitude portion. The second periodic portion additionally has a second frequency during the maximum amplitude portion. An amplitude modulation of the second periodic portion is phase locked to the first continuous periodic portion.
摘要翻译：提供了一种操作处理系统的方法，该处理系统具有布置成接收气体的空间和可操作以在该空间内产生电磁场的电磁场产生部分。所述方法包括向所述空间提供气体，以及利用驱动电位操作所述电磁场产生部分，以在所述空间内产生电磁场，以将所述气体的至少一部分转化为等离子体。作为时间的函数的驱动电位基于第一潜在功能部分和第二电位功能部分。第一潜在功能部分包括具有第一幅度和第一频率的第一连续周期部分。第二电位功能部分包括具有最大振幅部分和最小振幅部分和占空比的第二周期部分。最大幅度部分比最小振幅部分的幅度更大。占空比是最大幅度部分的持续时间与最大振幅部分的持续时间和最小振幅部分的持续时间之和的比率。第二周期部分在最大振幅部分期间另外具有第二频率。第二周期部分的幅度调制被锁相到第一连续周期部分。

93. 发明申请

US20100108491A1 METHODS FOR REMOVING A METAL OXIDE FROM A SUBSTRATE 有权
标题翻译：从基板上去除金属氧化物的方法
公开(公告)号：US20100108491A1
公开(公告)日：2010-05-06
申请号：US12683995
申请日：2010-01-07
申请人： Hyungsuk Alexander Yoon , William Thie , Yezdi Dordi , Andrew D. Bailey, III
发明人： Hyungsuk Alexander Yoon , William Thie , Yezdi Dordi , Andrew D. Bailey, III
IPC分类号： H05F3/00
CPC分类号： H01L21/31116 , H01L21/02063 , H01L21/67069 , H05H1/24 , H05H1/2406 , H05H1/48 , H05H2001/2418
摘要： A method for generating plasma for removing metal oxide from a substrate is provided. The method includes providing a powered electrode assembly, which includes a powered electrode, a dielectric layer, and a wire mesh disposed between the powered electrode and the dielectric layer. The method also includes providing a grounded electrode assembly disposed opposite the powered electrode assembly to form a cavity wherein the plasma is generated. The wire mesh is shielded from the plasma by the dielectric layer when the plasma is present in the cavity, which has an outlet at one end for providing the plasma to remove the metal oxide. The method further includes introducing at least one inert gas and at least one process gas into the cavity. The method yet also includes applying an rf field to the cavity using the powered electrode to generate the plasma from the inert and the process gas.
摘要翻译：提供了一种用于从衬底去除金属氧化物的等离子体的方法。该方法包括提供一种动力电极组件，其包括供电电极，电介质层和布置在电源电极和电介质层之间的金属丝网。该方法还包括提供与动力电极组件相对设置的接地电极组件，以形成其中产生等离子体的空腔。当等离子体存在于空腔中时，金属丝网通过电介质层被屏蔽，等离子体在一端具有出口，用于提供等离子体以去除金属氧化物。该方法还包括将至少一种惰性气体和至少一种工艺气体引入空腔中。该方法还包括使用动力电极将空穴场施加到空腔，以从惰性气体和处理气体产生等离子体。

94. 发明授权

US07662253B2 Apparatus for the removal of a metal oxide from a substrate and methods therefor 失效
标题翻译：用于从衬底去除金属氧化物的设备及其方法
公开(公告)号：US07662253B2
公开(公告)日：2010-02-16
申请号：US11237457
申请日：2005-09-27
申请人： Hyungsuk Alexander Yoon , William Thie , Yezdi Dordi , Andrew D. Bailey, III
发明人： Hyungsuk Alexander Yoon , William Thie , Yezdi Dordi , Andrew D. Bailey, III
IPC分类号： C23F1/00 , H01L21/306 , C23C16/00
CPC分类号： H01L21/31116 , H01L21/02063 , H01L21/67069 , H05H1/24 , H05H1/2406 , H05H1/48 , H05H2001/2418
摘要： An apparatus generating a plasma for removing metal oxide from a substrate is disclosed. The embodiment includes a powered electrode assembly, including a powered electrode, a first dielectric layer, and a first wire mesh disposed between the powered electrode and the first dielectric layer. The embodiment also includes a grounded electrode assembly disposed opposite the powered electrode assembly so as to form a cavity wherein the plasma is generated, the first wire mesh being shielded from the plasma by the first dielectric layer when the plasma is present in the cavity, the cavity having an outlet at one end for providing the plasma to remove the metal oxide.
摘要翻译：公开了一种从衬底生成用于去除金属氧化物的等离子体的装置。该实施例包括动力电极组件，其包括供电电极，第一介电层和设置在电源电极和第一介电层之间的第一丝网。该实施例还包括与动力电极组件相对设置的接地电极组件，以便形成其中产生等离子体的空腔，当等离子体存在于空腔中时，第一金属丝网被第一介电层与等离子体屏蔽，空腔在一端具有出口，用于提供等离子体以去除金属氧化物。

95. 发明授权

US07164282B1 Methods and apparatus for determining an average electrical response to a conductive layer on a substrate 有权
标题翻译：用于确定对基底上的导电层的平均电响应的方法和装置
公开(公告)号：US07164282B1
公开(公告)日：2007-01-16
申请号：US11092849
申请日：2005-03-28
申请人： Andrew D. Bailey, III , Michael Leonard , Benjamin W. Mooring , Candi Kristoffersen
发明人： Andrew D. Bailey, III , Michael Leonard , Benjamin W. Mooring , Candi Kristoffersen
IPC分类号： G01R31/26
CPC分类号： G01N27/9046
摘要： A method of determining an average electrical response to a conductive layer on a set of substrates vibrating about a vibration mean is disclosed. The method includes positioning a sensor near a position on a first substrate; and measuring a first plurality of electrical responses, wherein each of the first plurality of electrical responses is function of an electrical film property response and a first substrate proximity response. The method also includes positioning the sensor near the position on a second substrate; and measuring a second plurality of electrical responses, wherein each of the second plurality of electrical responses is function of the electrical film property response and a second substrate proximity response. The method further includes determining a first average electrical response for the first substrate and a second average electrical response for the second substrate, wherein a difference between an average first substrate proximity response and an average second substrate proximity response is about zero.
摘要翻译：公开了一种确定围绕振动平均值振动的一组基底上的导电层的平均电响应的方法。该方法包括将传感器定位在第一基底上的位置附近; 以及测量第一多个电响应，其中所述第一多个电响应中的每一个是电膜性质响应和第一衬底接近响应的函数。该方法还包括将传感器定位在第二基底上的位置附近; 以及测量第二多个电响应，其中所述第二多个电响应中的每一个是所述电膜特性响应和第二基板接近响应的函数。该方法还包括确定第一衬底的第一平均电响应和第二衬底的第二平均电响应，其中平均第一衬底接近响应和平均第二衬底接近响应之间的差为约零。

96. 发明授权

US07130767B2 Computer-implemented data presentation techniques for a plasma processing system 有权
标题翻译：用于等离子体处理系统的计算机实现的数据呈现技术
公开(公告)号：US07130767B2
公开(公告)日：2006-10-31
申请号：US10951551
申请日：2004-09-27
申请人： Andrew D. Bailey, III , Puneet Yadav
发明人： Andrew D. Bailey, III , Puneet Yadav
IPC分类号： G06F11/32
CPC分类号： H01J37/32935
摘要： A computer-implemented data presentation technique for presenting a set of expected failure states of system-related constructs pertaining to a plasma processing system is disclosed. The technique includes receiving a set of indicia pertaining to a first system-related construct of said system-related constructs. The technique also includes computing, in accordance with a first sub-method and responsive to said receiving said first set of indicia, a first expected failure state value. The technique further includes computing a first normalized expected failure state value in accordance with a first weight; correlating said first normalized expected failure state value to a first color; and displaying said first color in a cell of an n-dimensional matrix, wherein n is a number greater than 1.
摘要翻译：公开了一种用于呈现与等离子体处理系统有关的系统相关结构的一组预期故障状态的计算机实现的数据呈现技术。该技术包括接收与所述系统相关结构的第一系统相关结构有关的一组标记。该技术还包括根据第一子方法并响应于所述接收所述第一组标记来计算第一预期故障状态值。该技术还包括根据第一权重来计算第一归一化预期故障状态值; 将所述第一归一化预期故障状态值与第一颜色相关; 以及在n维矩阵的单元格中显示所述第一颜色，其中n是大于1的数字。

97. 发明授权

US07078344B2 Stress free etch processing in combination with a dynamic liquid meniscus 有权
标题翻译：与动态液体弯液面相结合的无应力蚀刻处理
公开(公告)号：US07078344B2
公开(公告)日：2006-07-18
申请号：US10769498
申请日：2004-01-30
申请人： Andrew D. Bailey, III , Michael Ravkin , Mikhail Korolik , Puneet Yadav
发明人： Andrew D. Bailey, III , Michael Ravkin , Mikhail Korolik , Puneet Yadav
IPC分类号： H01L21/302
CPC分类号： H01L21/7684 , H01J37/32522 , H01J2237/022 , H01L21/32115 , H01L21/32136 , H01L21/67034 , H01L21/67051 , H01L21/6708 , H01L21/67253
摘要： A system and method for planarizing and controlling non-uniformity on a patterned semiconductor substrate includes receiving a patterned semiconductor substrate. The patterned semiconductor substrate having a conductive interconnect material filling multiple features in the pattern. The conductive interconnect material having an overburden portion. A bulk of the overburden portion is removed and a remaining portion of the overburden portion has a non-uniformity. The non-uniformity is mapped, optimal solution determined and a dynamic liquid meniscus etch process recipe is developed to correct the non-uniformity. A dynamic liquid meniscus etch process, using the dynamic liquid meniscus etch process recipe, is applied to correct the non-uniformity to substantially planarize the remaining portion of the overburden portion.
摘要翻译：用于平坦化和控制图案化半导体衬底上的不均匀性的系统和方法包括接收图案化的半导体衬底。图案化的半导体衬底具有填充图案中的多个特征的导电互连材料。导电互连材料具有覆盖层部分。去除大部分上覆层部分，并且覆盖层部分的剩余部分具有不均匀性。绘制不均匀性，确定最佳溶液，并开发动态液体弯月面蚀刻工艺配方以校正不均匀性。使用动态液体弯月面蚀刻工艺配方的动态液体弯月面蚀刻工艺来校正不均匀性，以使覆盖层部分的剩余部分基本平坦化。

98. 发明授权

US09721782B2 Method and apparatus for shaping a gas profile near bevel edge 有权
公开(公告)号：US09721782B2
公开(公告)日：2017-08-01
申请号：US13157122
申请日：2011-06-09
申请人： Jack Chen , Andrew D. Bailey, III , Iqbal Shareef
发明人： Jack Chen , Andrew D. Bailey, III , Iqbal Shareef
IPC分类号： B05C11/00 , H01L21/306 , H01L21/3065 , H01L21/02 , H01L21/3213 , H01L21/311 , H01L21/67 , C23C16/455
CPC分类号： H01L21/02087 , C23C16/455 , H01L21/31116 , H01L21/31138 , H01L21/32136 , H01L21/67051 , H01L21/67069 , H01L21/6708
摘要： A method for etching a bevel edge of a substrate in a processing chamber is provided. The method includes flowing an inert gas into a center region of the processing chamber defined above a center region of the substrate and flowing a mixture of an inert gas and a processing gas over an edge region of the substrate. The method further includes striking a plasma in the edge region, wherein the flow of the inert gas and the flow of the mixture maintain a mass fraction of the processing gas substantially constant. A processing chamber configured to clean a bevel edge of a substrate is also provided.

99. 发明授权

US08900398B2 Local plasma confinement and pressure control arrangement and methods thereof 有权
标题翻译：局部血浆限制和压力控制布置及其方法
公开(公告)号：US08900398B2
公开(公告)日：2014-12-02
申请号：US12872982
申请日：2010-08-31
申请人： Rajinder Dhindsa , Michael C. Kellogg , Babak Kadkhodayan , Andrew D. Bailey, III
发明人： Rajinder Dhindsa , Michael C. Kellogg , Babak Kadkhodayan , Andrew D. Bailey, III
IPC分类号： H01L21/3065 , H01J37/32
CPC分类号： H01J37/32642 , H01J37/32623
摘要： An arrangement for performing pressure control within a processing chamber substrate processing is provided. The arrangement includes a peripheral ring configured at least for surrounding a confined chamber volume that is configured for sustaining a plasma for etching the substrate during substrate processing. The peripheral ring includes a plurality of slots that is configured at least for exhausting processed byproduct gas from the confined chamber volume during substrate processing. The arrangement also includes a conductive control ring that is positioned next to the peripheral ring and is configured to include plurality of slots. The pressure control is achieved by moving the conductive control ring relative to the peripheral ring such that a first slot on the peripheral ring and a second slot on the conductive control ring are offset with respect to one another in a range of zero offset to full offset.
摘要翻译：提供了一种用于在处理室衬底处理中执行压力控制的装置。该装置包括至少围绕限制室容积配置的外围环，该限定室容积被配置为在衬底处理期间维持用于刻蚀衬底的等离子体。周边环包括多个狭槽，其被构造成至少在衬底处理期间从受限腔体积中排出经处理的副产物气体。该布置还包括导电控制环，该导电控制环位于外围环旁边并且被配置为包括多个狭槽。通过相对于外围环移动导电控制环来实现压力控制，使得外围环上的第一槽和导电控制环上的第二槽相对于彼此在零偏移到全偏移的范围内彼此偏移。

100. 发明申请

US20140060739A1 RF GROUND RETURN IN PLASMA PROCESSING SYSTEMS AND METHODS THEREFOR 审中-公开
标题翻译：等离子体处理系统中的RF接地回路及其方法
公开(公告)号：US20140060739A1
公开(公告)日：2014-03-06
申请号：US13662331
申请日：2012-10-26
申请人： Rajinder Dhindsa , Alexei Marakhtanov , Michael C. Kellogg , Andy Desepte , Andrew D. Bailey, III
发明人： Rajinder Dhindsa , Alexei Marakhtanov , Michael C. Kellogg , Andy Desepte , Andrew D. Bailey, III
IPC分类号： H01J37/04
CPC分类号： H01J37/04 , H01J37/32091 , H01J37/32174
摘要： Methods and apparatus for operating the plasma processing chamber of a plasma processing tool in at least two modes are disclosed. In the first mode, the substrate-bearing assembly is movable within a gap-adjustable range to adjust the gap between the electrodes to accommodate different processing requirements. In this first mode, RF ground return path continuity is maintained irrespective of the gap distance as long as the gap distance is within the gap-adjustable range. In the second mode, the substrate bearing assembly is capable of moving to further open the gap to accommodate unimpeded substrate loading/unloading.
摘要翻译：公开了以至少两种模式操作等离子体处理工具的等离子体处理室的方法和装置。在第一模式中，基板支承组件可在间隙可调节范围内移动，以调节电极之间的间隙以适应不同的加工要求。在该第一模式中，只要间隙距离在间隙可调整范围内，RF接地返回路径连续性被维持而与间隙距离无关。在第二模式中，基板支承组件能够移动以进一步打开间隙以适应无阻碍的基板装载/卸载。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式