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    • 91. 发明申请
    • ENHANCING INTERACTIVE VOICE RESPONSE SYSTEMS VIA MESSAGING
    • 通过消息传递增强交互式语音响应系统
    • US20080095330A1
    • 2008-04-24
    • US11877952
    • 2007-10-24
    • Ling JinYu Fei MaPei SunJun ShenChun Sheng Chu
    • Ling JinYu Fei MaPei SunJun ShenChun Sheng Chu
    • H04M11/00
    • H04M3/493H04M7/0048H04M2203/251
    • Disclosed are a method, information processing system, and computer storage program product for providing communication between a user electronic device and an Interactive Voice Response (“IVR”) system. At least one selection from a user corresponding to at least one menu in an IVR system is received. The selection comprises an instruction selection sequence. At least one voice message and at least one visual message associated with the voice message, each corresponding to the instruction sequence are generated in response to the receiving. The voice message and visual message are transmitted to the electronic device associated with the user. The visual message is to be displayed to the user on an electronic device associated with the user while the voice message is being played to the user.
    • 公开了一种用于在用户电子设备和交互式语音响应(“IVR”)系统之间提供通信的方法,信息处理系统和计算机存储程序产品。 接收来自与IVR系统中的至少一个菜单对应的用户的至少一个选择。 选择包括指令选择序列。 响应于接收,生成与语音消息相关联的至少一个语音消息和至少一个与消息对应的视讯。 语音消息和可视消息被发送到与用户相关联的电子设备。 在向用户播放语音消息的同时,在与用户相关联的电子设备上向用户显示视觉消息。
    • 92. 发明申请
    • Message Sender Controllable Messaging System
    • 消息发送者可控消息系统
    • US20070293195A1
    • 2007-12-20
    • US11664078
    • 2005-09-09
    • Alastair AngwinChang GuoJun ShenSong SongPei SunJian Zhang
    • Alastair AngwinChang GuoJun ShenSong SongPei SunJian Zhang
    • H04M1/663
    • H04M1/72547H04W4/12
    • The present invention relates to a mobile phone and a method for its operation and control. The mobile phone is capable of receiving the message sent by other mobile phones through a message transmission system. The method comprises: receiving the message from another mobile phone, wherein the received message comprises a presentation part and an associated control part, the control part being used for the control and management of the processing of the received message; extracting the control part from the received message; and executing the operation related to the message based on the extracted control part. According to an embodiment, if the control part received by the mobile phone comprises the notification mode control command, the mobile phone issues a message notification according to the notification mode control command, disregarding the message notification mode pre-configured on the mobile phone. Thus the requirement of the sender personalized message service can be satisfied.
    • 本发明涉及一种移动电话及其操作和控制方法。 移动电话能够通过消息传输系统接收其他移动电话发送的消息。 该方法包括:从另一个移动电话接收消息,其中所接收的消息包括呈现部分和相关联的控制部分,所述控制部分用于控制和管理所接收的消息的处理; 从接收到的消息中提取控制部分; 以及基于所提取的控制部分执行与所述消息相关的操作。 根据实施例,如果由移动电话接收到的控制部分包括通知模式控制命令,则移动电话根据通知模式控制命令发出消息通知,而不考虑在移动电话上预先配置的消息通知模式。 因此,可以满足发件人个性化消息服务的要求。
    • 93. 发明授权
    • Micro magnetic proximity sensor system
    • 微磁接近传感器系统
    • US07301334B2
    • 2007-11-27
    • US11447288
    • 2006-06-06
    • Jun ShenMeichun RuanChengping Wei
    • Jun ShenMeichun RuanChengping Wei
    • G01B7/14
    • H01H36/002H01H36/0026H01H2036/0093
    • A system that senses proximity includes a magnet producing a magnetic field and a sensor having a switch. The switch includes a cantilever supported by a supporting structure. The cantilever has a magnetic material and a longitudinal axis. The magnetic material makes the cantilever sensitive to the magnetic field, such that the cantilever is configured to move between first and second states. The switch also includes contacts supported by the support structure. The switch can be configured as a reed switch. When the magnet moves relative to the sensor, the cantilever interacts with a respective one of the contacts based on the position of the magnet during movement.
    • 感测邻近的系统包括产生磁场的磁体和具有开关的传感器。 开关包括由支撑结构支撑的悬臂。 悬臂具有磁性材料和纵轴。 磁性材料使得悬臂对磁场敏感,使得悬臂构造成在第一和第二状态之间移动。 开关还包括由支撑结构支撑的触点。 开关可以配置为簧片开关。 当磁体相对于传感器移动时,基于磁体在运动过程中的位置,悬臂与相应的触点相互作用。
    • 94. 发明申请
    • Micro magnetic latching switches and methods of making same
    • 微型磁性开关及其制作方法
    • US20060186974A1
    • 2006-08-24
    • US11218718
    • 2005-09-06
    • Jun ShenMeichun Ruan
    • Jun ShenMeichun Ruan
    • H01H51/22
    • H01H50/005H01H2050/007
    • A latching micro magnetic switch includes a magnet located proximate to a supporting structure. The magnet produces a first magnetic field with field lines symmetrically spaced about a central axis or non-uniform field lines. The switch also includes a cantilever supported by the supporting structure. The cantilever has a magnetic material and a longitudinal axis. The magnetic material makes the cantilever sensitive to the first magnetic field, such that the cantilever is configured to move between first and second states. The switch further includes a conductor located proximate to the supporting structure and the cantilever. The conductor is configured to conduct a current. The current produces a second magnetic field, which causes the cantilever to switch between the first and second states.
    • 闭锁微型磁性开关包括位于支撑结构附近的磁体。 磁体产生第一磁场,其中场线围绕中心轴或非均匀场线对称地间隔开。 开关还包括由支撑结构支撑的悬臂。 悬臂具有磁性材料和纵轴。 磁性材料使得悬臂对第一磁场敏感,使得悬臂构造成在第一和第二状态之间移动。 开关还包括位于支撑结构和悬臂附近的导体。 导体被配置为导通电流。 电流产生第二磁场,这导致悬臂在第一和第二状态之间切换。
    • 95. 发明申请
    • Latching micro-magnetic switch array
    • US20060146470A1
    • 2006-07-06
    • US11179809
    • 2005-07-13
    • Jun ShenCheng Wei
    • Jun ShenCheng Wei
    • H01H47/00
    • H01H50/005H01H67/22H01H2050/007
    • Systems and methods for actuating micro-magnetic latching switches in an array of micro-magnetic latching switches are described. The array of switches is defined by Y rows aligned with a first axis and X columns aligned with a second axis. Each switch in the array of switches is capable of being actuated by a coil. In an aspect, a row of coils is moved along the second axis to be positioned adjacent to a selected one of the Y rows of switches. A sufficient driving current is proved to a selected coil in the row of coils to actuate a selected switch in the selected one of the Y rows of switches. In another aspect, a plurality of first axis drive signals and a plurality of second axis drive signals are generated. These signals drive an array of coils, wherein each coil in the array of coils is positioned adjacent to a corresponding switch in the array of switches. Each first axis drive signal is coupled to coils in a corresponding column of coils in the array of coils. Each second axis drive signal is coupled to coils in a corresponding row of coils in the array of coils. In another aspect, a three-dimensional array of switches is actuated by drive signals that drive a three-dimensional array of coils.
    • 100. 发明授权
    • Band-to-band resonant tunneling transistor
    • 带对带谐振隧道晶体管
    • US5489785A
    • 1996-02-06
    • US209789
    • 1994-03-11
    • Saied N. TehraniJun ShenHerbert GoronkinXiaodong T. Zhu
    • Saied N. TehraniJun ShenHerbert GoronkinXiaodong T. Zhu
    • H01L29/68H01L29/06H01L29/205H01L29/737H01L27/12
    • H01L29/7376B82Y10/00
    • A band-to-band resonant tunneling transistor including GaSb and InAs resonant tunneling layers separated by a thin barrier layer and a second InAs layer separated from the GaSb layer by another thin barrier layer. A terminal on the InAs resonant tunneling layer and a terminal on the second InAs layer. Leakage current reduction layers are positioned on the second InAs layer with a bias terminal positioned thereon. The InAs resonant tunneling layer has a plurality of quantized states which are misaligned with the ground state of the GaSb layer in a quiescent state, each of the quantized states of the InAs resonant tunneling layer are movable into alignment with the ground state of the GaSb layer to provide current flow through the transistor with the application of a specific potential to the terminal on the second InAs layer.
    • 包括GaSb和InAs谐振隧道层的带对带谐振隧穿晶体管,其由薄的阻挡层和由另一个薄的阻挡层与GaSb层分离的第二InAs层隔开。 InAs谐振隧穿层上的一个端子和第二个InAs层上的一个端子。 漏电流减少层位于第二InAs层上,偏置端子位于其上。 InAs谐振隧穿层具有与处于静止状态的GaSb层的基态不对准的多个量化状态,InAs谐振隧穿层的每个量子化状态可移动地与GaSb层的基态对准 以通过向第二InAs层上的端子施加特定电位来提供流过晶体管的电流。