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91. 发明授权

US5793062A Transparent substrate light emitting diodes with directed light output 失效
公开(公告)号：US5793062A
公开(公告)日：1998-08-11
申请号：US962944
申请日：1997-10-24
申请人： Fred A. Kish, Jr. , Stephen A. Stockman
发明人： Fred A. Kish, Jr. , Stephen A. Stockman
IPC分类号： H01L33/10 , H01L33/20 , H01L33/22 , H01L33/00 , H01S3/08
CPC分类号： H01L33/10 , H01L21/24 , H01L33/20 , H01L33/22
摘要： Methods for the fabrication of TS LED chips with improved light extraction and optics, particularly increased top surface emission, and the TS LEDs so fabricated are described. Non-absorbing DBRs within the chip permit the fabrication of the LEDs. The transparent DBRs redirect light away from absorbing regions such as contacts within the chip, increasing the light extraction efficiency of the LED. The non-absorbing DBRs can also redirect light toward the top surface of the chip, improving the amount of top surface emission and the on-axis intensity of the packaged LED. These benefits are accomplished with optically non-absorbing layers, maintaining the advantages of a TS LED, which advantages include .about.6 light escape cones, and improved multiple pass light extraction.

92. 发明授权

US09971090B2 Apparatus and method for tuning a laser source emission wavelength employing a laser source contact comprising electrode segments 有权
公开(公告)号：US09971090B2
公开(公告)日：2018-05-15
申请号：US10915807
申请日：2004-08-11
申请人： Fred A. Kish, Jr. , Charles H. Joyner , David F. Welch
发明人： Fred A. Kish, Jr. , Charles H. Joyner , David F. Welch
IPC分类号： H01S5/042 , H01S5/062 , G02B6/12 , B82Y20/00 , G02B6/124 , H01S5/06 , H01S5/22 , H01S5/40 , H04B10/291 , H04B10/50 , H04B10/572 , H04J14/02 , G02B6/02 , G02F1/017 , H01S5/00 , H01S5/024 , H01S5/026 , H01S5/0625 , H01S5/0683 , H01S5/0687 , H01S5/12 , H01S5/20 , H01S5/227 , H01S5/34 , H01S5/343 , H01S5/50
CPC分类号： G02B6/12033 , B82Y20/00 , G02B6/02204 , G02B6/12004 , G02B6/12007 , G02B6/12019 , G02B6/12023 , G02B6/12026 , G02B6/12028 , G02B6/124 , G02F1/01725 , G02F2001/0175 , G02F2001/01758 , H01S5/0085 , H01S5/024 , H01S5/02415 , H01S5/02453 , H01S5/02461 , H01S5/02476 , H01S5/026 , H01S5/0261 , H01S5/0264 , H01S5/0265 , H01S5/0268 , H01S5/0425 , H01S5/0612 , H01S5/06256 , H01S5/06258 , H01S5/0683 , H01S5/0687 , H01S5/12 , H01S5/1228 , H01S5/2077 , H01S5/22 , H01S5/2214 , H01S5/2224 , H01S5/227 , H01S5/2272 , H01S5/2275 , H01S5/3408 , H01S5/34306 , H01S5/4025 , H01S5/4031 , H01S5/4087 , H01S5/50 , H04B10/2914 , H04B10/50 , H04B10/506 , H04B10/572 , H04J14/02
摘要： A laser source or a plurality of laser sources in a photonic integrated circuit (PIC) are provided with an electrical contact that is either segmented or is connected to a series of vernier resistor segments for supply of current to operate the laser source. In either case, at least one segment of the laser contact or at least one vernier resistor segment can be trimmed in order to vary the amount of current supplied to the laser source resulting in a change to its current density and, thus, a change in its operational wavelength while maintaining the current supplied to the laser source constant.

93. 发明授权

US07491565B2 III-nitride light emitting devices fabricated by substrate removal 有权
标题翻译：通过衬底去除制造的III族氮化物发光器件
公开(公告)号：US07491565B2
公开(公告)日：2009-02-17
申请号：US11330209
申请日：2006-01-10
申请人： Carrie Carter Coman , Fred A. Kish, Jr. , Michael R Krames , Paul S Martin
发明人： Carrie Carter Coman , Fred A. Kish, Jr. , Michael R Krames , Paul S Martin
IPC分类号： H01L21/00
CPC分类号： H01L33/40 , H01L33/32 , H01S5/0216 , H01S5/0421 , H01S5/18341 , H01S5/32341
摘要： Devices and techniques for fabricating InAlGaN light-emitting devices are described that result from the removal of light-emitting layers from the sapphire growth substrate. In several embodiments, techniques for fabricating a vertical InAlGaN light-emitting diode structure that result in improved performance and or cost-effectiveness are described. Furthermore, metal bonding, substrate liftoff, and a novel RIE device separation technique are employed to efficiently produce vertical GaN LEDs on a substrate chosen for its thermal conductivity and ease of fabrication.
摘要翻译：描述了从蓝宝石生长衬底去除发光层所产生的用于制造InAlGaN发光器件的器件和技术。在几个实施例中，描述了用于制造导致改进的性能和/或成本效益的垂直InAlGaN发光二极管结构的技术。此外，采用金属结合，衬底剥离和新颖的RIE器件分离技术来有效地在选择用于其导热性和易于制造的衬底上生产垂直GaN LED。

94. 发明授权

US07471857B2 Method of tuning optical components integrated in a monolithic photonic integrated circuit (PIC) 有权
标题翻译：集成在单片光子集成电路（PIC）中的光学元件的调谐方法
公开(公告)号：US07471857B2
公开(公告)日：2008-12-30
申请号：US11693680
申请日：2007-03-29
申请人： Fred A. Kish, Jr. , Charles H. Joyner , David F. Welch , Robert B. Taylor , Alan C. Nilsson
发明人： Fred A. Kish, Jr. , Charles H. Joyner , David F. Welch , Robert B. Taylor , Alan C. Nilsson
IPC分类号： G02B6/12
CPC分类号： G02B6/12033 , B82Y20/00 , G02B6/02204 , G02B6/12004 , G02B6/12007 , G02B6/12019 , G02B6/12023 , G02B6/12026 , G02B6/12028 , G02B6/124 , G02F1/01725 , G02F2001/0175 , G02F2001/01758 , H01S5/0085 , H01S5/024 , H01S5/02415 , H01S5/02453 , H01S5/02461 , H01S5/02476 , H01S5/026 , H01S5/0261 , H01S5/0264 , H01S5/0265 , H01S5/0268 , H01S5/0425 , H01S5/0612 , H01S5/06256 , H01S5/06258 , H01S5/0683 , H01S5/0687 , H01S5/12 , H01S5/1228 , H01S5/2077 , H01S5/22 , H01S5/2214 , H01S5/2224 , H01S5/227 , H01S5/2272 , H01S5/2275 , H01S5/3408 , H01S5/34306 , H01S5/4025 , H01S5/4031 , H01S5/4087 , H01S5/50 , H04B10/2914 , H04B10/50 , H04B10/506 , H04B10/572 , H04J14/02
摘要： An optical transmitter comprises a monolithic transmitter photonic integrated circuit (TxPIC) chip that includes an array of modulated sources formed on the PIC chip and having different operating wavelengths approximating a standardized wavelength grid and providing signal outputs of different wavelengths. A wavelength selective combiner is formed on the PIC chip having a wavelength grid passband response approximating the wavelength grid of the standardized wavelength grid. The signal outputs of the modulated sources optically coupled to inputs of the wavelength selective combiner to produce a combined signal output from the combiner. A first wavelength tuning element coupled to each of the modulated sources and a second wavelength tuning element coupled to the wavelength selective combiner. A wavelength monitoring unit is coupled to the wavelength selective combiner to sample the combined signal output. A wavelength control system coupled to the first and second wavelength tuning elements and to said wavelength monitoring unit to receive the sampled combined signal output. The wavelength control system adjusts the respective wavelengths of operation of the modulated sources to approximate or to be chirped to the standardized wavelength grid and for adjusting the optical combiner wavelength grid passband response to approximate the standardized wavelength grid.
摘要翻译：光发射机包括单片发射机光子集成电路（TxPIC）芯片，其包括形成在PIC芯片上的调制源的阵列，并且具有接近标准化波长网格并提供不同波长的信号输出的不同工作波长。在具有近似于标准化波长网格的波长网格的波长网格通带响应的PIC芯片上形成波长选择性组合器。调制源的信号输出光耦合到波长选择组合器的输入，以产生从组合器输出的组合信号。耦合到每个调制源的第一波长调谐元件和耦合到波长选择组合器的第二波长调谐元件。波长监测单元耦合到波长选择组合器以对组合的信号输出进行采样。波长控制系统耦合到第一和第二波长调谐元件以及所述波长监视单元以接收采样的组合信号输出。波长控制系统调整调制源的各个波长的波长近似于或被啁啾到标准化波长网格，并且用于调整光合并波长网格通带响应以近似标准化的波长网格。

95. 发明授权

US07208770B2 Oxygen-doped Al-containing current blocking layers in active semiconductor devices in photonic integrated circuits (PICs) 有权
标题翻译：在光子集成电路（PIC）中的有源半导体器件中的氧掺杂的含Al电流阻挡层
公开(公告)号：US07208770B2
公开(公告)日：2007-04-24
申请号：US11059207
申请日：2005-02-16
申请人： Fred A. Kish, Jr. , Sheila Hurtt , Charles H. Joyner , Richard P. Schneider
发明人： Fred A. Kish, Jr. , Sheila Hurtt , Charles H. Joyner , Richard P. Schneider
IPC分类号： H01L33/00 , H01L29/22
CPC分类号： B82Y20/00 , H01L31/03046 , H01L31/109 , H01L33/145 , H01S5/026 , H01S5/2072 , H01S5/221 , H01S5/2224 , H01S5/2226 , H01S5/2227 , H01S5/2231 , H01S5/227 , H01S5/2275 , H01S5/3072 , H01S5/34306 , Y02E10/544
摘要： In photonic integrated circuits (PICs) having at least one active semiconductor device, such as, a buried heterostructure semiconductor laser, LED, modulator, photodiode, heterojunction bipolar transistor, field effect transistor or other active device, a plurality of semiconductor layers are formed on a substrate with one of the layers being an active region. A current channel is formed through this active region defined by current blocking layers formed on adjacent sides of a designated active region channel where the blocking layers substantially confine the current through the channel. The blocking layers are characterized by being an aluminum-containing Group III-V compound, i.e., an Al-III-V layer, intentionally doped with oxygen from an oxide source. Also, wet oxide process or a deposited oxide source may be used to laterally form a native oxide of the Al-III-V layer. An example of a material system for this invention useful at optical telecommunication wavelengths is InGaAsP/InP where the Al-III-V layer comprises InAlAs:O or InAlAs:O:Fe. Other materials for the blocking layers may be InAlGaAs or alternating layers or alternating monolayers of AlAs/InAs. Thus, the O-doped blocking layers may be undoped, impurity doped or co-doped with Fe.
摘要翻译：在具有至少一个有源半导体器件（例如掩埋异质结构半导体激光器，LED，调制器，光电二极管，异质结双极晶体管，场效应晶体管或其它有源器件）的光子集成电路（PIC）中，多个半导体层其中一层是活性区的基底。通过由形成在指定的有源区通道的相邻侧上的电流阻挡层限定的有源区形成电流通道，其中阻挡层基本上限制电流通过通道。阻挡层的特征在于含有铝的III-V族化合物，即有意从氧化物源掺杂氧的Al-III-V层。此外，湿氧化物工艺或沉积的氧化物源可用于横向形成Al-III-V层的天然氧化物。在光通信波长下用于本发明的材料系统的一个例子是InGaAsP / InP，其中Al-III-V层包括InAlAs：O或InAlAs：O：Fe。用于阻挡层的其它材料可以是AlAlGaAs或AlAs / InAs的交替层或交替单层。因此，O掺杂阻挡层可以是未掺杂的，杂质掺杂的或与Fe共掺杂的。

96. 发明授权

US07122846B2 Oxygen-doped Al-containing current blocking layers in active semiconductor devices in photonic integrated circuits (PICs) 有权
标题翻译：在光子集成电路（PIC）中的有源半导体器件中的氧掺杂的含Al电流阻挡层
公开(公告)号：US07122846B2
公开(公告)日：2006-10-17
申请号：US11059201
申请日：2005-02-16
申请人： Fred A. Kish, Jr. , Sheila Hurtt , Charles H. Joyner , Richard P. Schneider
发明人： Fred A. Kish, Jr. , Sheila Hurtt , Charles H. Joyner , Richard P. Schneider
IPC分类号： H01L29/221 , H01L29/22
CPC分类号： B82Y20/00 , H01L31/03046 , H01L31/109 , H01L33/145 , H01S5/026 , H01S5/2072 , H01S5/221 , H01S5/2224 , H01S5/2226 , H01S5/2227 , H01S5/2231 , H01S5/227 , H01S5/2275 , H01S5/3072 , H01S5/34306 , Y02E10/544
摘要： In photonic integrated circuits (PICs) having at least one active semiconductor device, such as, a buried heterostructure semiconductor laser, LED, modulator, photodiode, heterojunction bipolar transistor, field effect transistor or other active device, a plurality of semiconductor layers are formed on a substrate with one of the layers being an active region. A current channel is formed through this active region defined by current blocking layers formed on adjacent sides of a designated active region channel where the blocking layers substantially confine the current through the channel. The blocking layers are characterized by being an aluminum-containing Group III-V compound, i.e., an Al-III-V layer, intentionally doped with oxygen from an oxide source. Also, wet oxide process or a deposited oxide source may be used to laterally form a native oxide of the Al-III-V layer. An example of a material system for this invention useful at optical telecommunication wavelengths is InGaAsP/InP where the Al-III-V layer comprises InAlAs:O or InAlAs:O:Fe. Other materials for the blocking layers may be InAlGaAs or alternating layers or alternating monolayers of AlAs/InAs. Thus, the O-doped blocking layers may be undoped, impurity doped or co-doped with Fe.
摘要翻译：在具有至少一个有源半导体器件（例如掩埋异质结构半导体激光器，LED，调制器，光电二极管，异质结双极晶体管，场效应晶体管或其它有源器件）的光子集成电路（PIC）中，多个半导体层其中一层是活性区的基底。通过由形成在指定的有源区通道的相邻侧上的电流阻挡层限定的有源区形成电流通道，其中阻挡层基本上限制电流通过通道。阻挡层的特征在于含有铝的III-V族化合物，即有意从氧化物源掺杂氧的Al-III-V层。此外，湿氧化物工艺或沉积的氧化物源可用于横向形成Al-III-V层的天然氧化物。在光通信波长下用于本发明的材料系统的一个例子是InGaAsP / InP，其中Al-III-V层包括InAlAs：O或InAlAs：O：Fe。用于阻挡层的其它材料可以是AlAlGaAs或AlAs / InAs的交替层或交替单层。因此，O掺杂阻挡层可以是未掺杂的，杂质掺杂的或与Fe共掺杂的。

97. 发明授权

US07103239B2 Optical transmitter 有权
标题翻译：光发射机
公开(公告)号：US07103239B2
公开(公告)日：2006-09-05
申请号：US11205798
申请日：2005-08-17
申请人： Fred A. Kish, Jr. , Charles H. Joyner , David F. Welch , Robert B. Taylor , Alan C. Nilsson
发明人： Fred A. Kish, Jr. , Charles H. Joyner , David F. Welch , Robert B. Taylor , Alan C. Nilsson
IPC分类号： G02B6/12
CPC分类号： G02B6/12033 , B82Y20/00 , G02B6/02204 , G02B6/12004 , G02B6/12007 , G02B6/12019 , G02B6/12023 , G02B6/12026 , G02B6/12028 , G02B6/124 , G02F1/01725 , G02F2001/0175 , G02F2001/01758 , H01S5/0085 , H01S5/024 , H01S5/02415 , H01S5/02453 , H01S5/02461 , H01S5/02476 , H01S5/026 , H01S5/0261 , H01S5/0264 , H01S5/0265 , H01S5/0268 , H01S5/0425 , H01S5/0612 , H01S5/06256 , H01S5/06258 , H01S5/0683 , H01S5/0687 , H01S5/12 , H01S5/1228 , H01S5/2077 , H01S5/22 , H01S5/2214 , H01S5/2224 , H01S5/227 , H01S5/2272 , H01S5/2275 , H01S5/3408 , H01S5/34306 , H01S5/4025 , H01S5/4031 , H01S5/4087 , H01S5/50 , H04B10/2914 , H04B10/50 , H04B10/506 , H04B10/572 , H04J14/02
摘要： An optical transmitter comprises a monolithic transmitter photonic integrated circuit (TxPIC) chip that includes an array of modulated sources formed on the PIC chip and having different operating wavelengths approximating a standardized wavelength grid and providing signal outputs of different wavelengths. A wavelength selective combiner is formed on the PIC chip having a wavelength grid passband response approximating the wavelength grid of the standardized wavelength grid. The signal outputs of the modulated sources optically coupled to inputs of the wavelength selective combiner to produce a combined signal output from the combiner. A first wavelength tuning element coupled to each of the modulated sources and a second wavelength tuning element coupled to the wavelength selective combiner. A wavelength monitoring unit is coupled to the wavelength selective combiner to sample the combined signal output. A wavelength control system coupled to the first and second wavelength tuning elements and to said wavelength monitoring unit to receive the sampled combined signal output. The wavelength control system adjusts the respective wavelengths of operation of the modulated sources to approximate or to be chirped to the standardized wavelength grid and for adjusting the optical combiner wavelength grid passband response to approximate the standardized wavelength grid.
摘要翻译：光发射机包括单片发射机光子集成电路（TxPIC）芯片，其包括形成在PIC芯片上的调制源的阵列，并且具有接近标准化波长网格并提供不同波长的信号输出的不同工作波长。在具有近似于标准化波长网格的波长网格的波长网格通带响应的PIC芯片上形成波长选择性组合器。调制源的信号输出光耦合到波长选择组合器的输入，以产生从组合器输出的组合信号。耦合到每个调制源的第一波长调谐元件和耦合到波长选择组合器的第二波长调谐元件。波长监测单元耦合到波长选择组合器以对组合的信号输出进行采样。波长控制系统耦合到第一和第二波长调谐元件以及所述波长监视单元以接收采样的组合信号输出。波长控制系统调整调制源的各个波长的波长近似于或被啁啾到标准化波长网格，并且用于调整光合并波长网格通带响应以近似标准化的波长网格。

98. 发明授权

US07079718B2 Optical probe and method of testing employing an interrogation beam or optical pickup 有权
标题翻译：光探头和使用询问光束或光学拾取器的测试方法
公开(公告)号：US07079718B2
公开(公告)日：2006-07-18
申请号：US10909642
申请日：2004-08-02
申请人： David F. Welch , Fred A. Kish, Jr. , Frank H. Peters , Charles H. Joyner
发明人： David F. Welch , Fred A. Kish, Jr. , Frank H. Peters , Charles H. Joyner
IPC分类号： G02B6/12
CPC分类号： H04B10/2914 , B82Y20/00 , G02B6/12004 , G02B6/12007 , G02B6/12011 , G02B6/12019 , G02B6/12023 , G02B6/12026 , G02B6/12028 , G02B6/1203 , G02B6/12033 , G02B6/4249 , G02F1/01725 , G02F2001/0175 , G02F2001/01758 , H01S5/026 , H01S5/0264 , H01S5/0265 , H01S5/0268 , H01S5/0425 , H01S5/06256 , H01S5/06258 , H01S5/0683 , H01S5/101 , H01S5/1014 , H01S5/12 , H01S5/1228 , H01S5/183 , H01S5/2077 , H01S5/22 , H01S5/2224 , H01S5/227 , H01S5/3404 , H01S5/3408 , H01S5/34306 , H01S5/4025 , H01S5/4031 , H01S5/4087 , H01S5/50 , H01S5/5072 , H04B10/25 , H04B10/50 , H04B10/675 , H04J14/02
摘要： An optical probe and a method for testing an optical chip or device, such as an photonic integrated circuit (PIC), to provide for testing of such devices or circuits while they are still in their in-wafer form and is accomplished by using a an optical probe for interrogation of the circuit where an access is provided in the wafer to one or more of such in-wafer devices or circuits. As one example, the interrogation may be an interrogation beam provided at the access input to the in-wafer device or circuit. As another example, the interrogation may be an optical pickup from the access input to the in-wafer device or circuit.
摘要翻译：光学探针和用于测试诸如光子集成电路（PIC）的光学芯片或器件的光学探针和方法，以提供这些器件或电路在晶片状态下的测试，并且通过使用用于询问电路的光学探针，其中在晶片中提供对所述晶片内器件或电路中的一个或多个的访问。作为一个示例，询问可以是设置在晶片内设备或电路的访问输入处的询问光束。作为另一示例，询问可以是从访问输入到晶片内设备或电路的光学拾取器。

99. 发明授权

US06280523B1 Thickness tailoring of wafer bonded AlxGayInzN structures by laser melting 有权
标题翻译：通过激光熔化对晶片接合AlxGayInzN结构进行厚度裁剪
公开(公告)号：US06280523B1
公开(公告)日：2001-08-28
申请号：US09245448
申请日：1999-02-05
申请人： Carrie Carter Coman , Fred A. Kish, Jr. , R. Scott Kern , Michael R. Krames , Paul S. Martin
发明人： Carrie Carter Coman , Fred A. Kish, Jr. , R. Scott Kern , Michael R. Krames , Paul S. Martin
IPC分类号： C30B2512
CPC分类号： H01L33/465 , H01L33/007 , H01L33/0075 , H01L33/0079 , H01L33/105 , H01S5/0216 , H01S5/0217 , H01S5/18341 , H01S5/18361 , H01S5/1838 , H01S5/32341 , Y10S117/915
摘要： Light emitting devices having a vertical optical path, e.g. a vertical cavity surface emitting laser or a resonant cavity light emitting or detecting device, having high quality mirrors may be achieved using wafer bonding or metallic soldering techniques. The light emitting region interposes one or two reflector stacks containing dielectric distributed Bragg reflectors (DBRs). The dielectric DBRs may be deposited or attached to the light emitting device. A host substrate of GaP, GaAs, InP, or Si is attached to one of the dielectric DBRs. Electrical contacts are added to the light emitting device.
摘要翻译：具有垂直光路的发光器件，例如可以使用晶片接合或金属焊接技术实现具有高质量反射镜的垂直腔表面发射激光器或谐振腔发光或检测装置。发光区域包含一个或两个包含介质分布布拉格反射器（DBR）的反射器堆叠。电介质DBR可以沉积或附着到发光器件。 GaP，GaAs，InP或Si的主衬底连接到电介质DBR之一。电触点被添加到发光器件中。

100. 发明授权

US06222207B1 Diffusion barrier for increased mirror reflectivity in reflective solderable contacts on high power LED chip 有权
标题翻译：用于增加大功率LED芯片上可反射可焊接触点的镜面反射率的扩散屏障
公开(公告)号：US06222207B1
公开(公告)日：2001-04-24
申请号：US09317647
申请日：1999-05-24
申请人： Carrie Carter-Coman , Gloria Hofler , Fred A. Kish, Jr.
发明人： Carrie Carter-Coman , Gloria Hofler , Fred A. Kish, Jr.
IPC分类号： H01L3300
CPC分类号： H01L33/405
摘要： A solderable light-emitting diode (LED) chip and a method of fabricating an LED lamp embodying the LED chip utilize a diffusion barrier that appreciably blocks molecular migration between two different layers of the LED chip during high temperature processes. In the preferred embodiment, the two different layers of the LED chip are a back reflector and a solder layer. The prevention of intermixing of the materials in the back reflector and the solder layer impedes degradation of the back reflector with respect to its ability to reflect light emitted by the LED. The LED chip includes a high power AlInGaP LED or other type of LED, a back reflector, a diffusion barrier and a solder layer. Preferably, the back reflector is composed of silver (Ag) or Ag alloy and the solder layer is made of indium (In), lead (Pb), gold (Au), tin (Sn), or their alloy and eutectics. In a first embodiment, the diffusion layer is made of nickel (Ni) or nickel-vanadium (NiV). In a second embodiment of the invention, the diffusion barrier is made of titanium-tungsten-nitride (TiW:N). In addition to preventing the intermixing of the In of the solder layer with the Ag of the back reflector, the diffusion layer prevents degradation of the Ag reflective properties in the back reflector upon exposure to air. In an alternative embodiment, the diffusion layer is made of a non-conductive material.
摘要翻译：可焊接的发光二极管（LED）芯片和制造实施LED芯片的LED灯的方法利用在高温过程中可以明显阻挡LED芯片的两个不同层之间的分子迁移的扩散阻挡层。在优选实施例中，LED芯片的两个不同层是后反射器和焊料层。防止背反射器和焊料层中的材料的混合相对于其反射由LED发射的光的能力而妨碍背反射器的劣化。 LED芯片包括高功率AlInGaP LED或其他类型的LED，后反射器，扩散阻挡层和焊料层。优选地，背反射器由银（Ag）或Ag合金构成，并且焊料层由铟（In），铅（Pb），金（Au），锡（Sn）或其合金和共晶体制成。在第一实施例中，扩散层由镍（Ni）或镍 - 钒（NiV）制成。在本发明的第二实施例中，扩散阻挡层由钛 - 氮化钨（TiW：N）制成。除了防止焊料层的In与后反射体的Ag的混合之外，扩散层防止了暴露于空气中后反射器中的Ag反射特性的劣化。在替代实施例中，扩散层由非导电材料制成。

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