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91. 发明授权

US08382885B2 Fluid filtration for substrate processing chamber 失效
标题翻译：衬底处理室的流体过滤
公开(公告)号：US08382885B2
公开(公告)日：2013-02-26
申请号：US12914822
申请日：2010-10-28
申请人： Dustin W. Ho , Juan Carlos Rocha-Alvarez , Hichem M'Saad
发明人： Dustin W. Ho , Juan Carlos Rocha-Alvarez , Hichem M'Saad
IPC分类号： B01D53/02
CPC分类号： C23C16/4402 , C23C16/4481 , C23C16/52
摘要： A filter for filtering a fluid in a substrate processing apparatus comprises first and second stages that are connected to one another. A delivery system provides a vaporized liquid to the filter. The first stage of the filter comprises a basic compound, and the second stage of the filter comprises a desiccant. A second filter comprises a permeation filter with permeable membrane to filter the fluid. Methods of filtering the fluid to reduce formation of undesirable process residues using the filter(s) are also described.
摘要翻译：用于过滤衬底处理设备中的流体的过滤器包括彼此连接的第一和第二阶段。输送系统向过滤器提供蒸发的液体。过滤器的第一阶段包括碱性化合物，并且过滤器的第二阶段包括干燥剂。第二过滤器包括具有可渗透膜的渗透过滤器以过滤流体。还描述了使用过滤器过滤流体以减少不期望的工艺残余物的形成的方法。

92. 发明授权

US07718081B2 Techniques for the use of amorphous carbon (APF) for various etch and litho integration schemes 失效
标题翻译：使用无定形碳（APF）进行各种蚀刻和光刻积分方案的技术
公开(公告)号：US07718081B2
公开(公告)日：2010-05-18
申请号：US11422031
申请日：2006-06-02
申请人： Wei Liu , Jim Zhongyi He , Sang H. Ahn , Meihua Shen , Hichem M'Saad , Wendy H. Yeh , Christopher D. Bencher
发明人： Wei Liu , Jim Zhongyi He , Sang H. Ahn , Meihua Shen , Hichem M'Saad , Wendy H. Yeh , Christopher D. Bencher
IPC分类号： C23F1/00 , B44C1/22 , G03C5/00 , H01L21/302 , C03C25/68
CPC分类号： G03F7/091 , H01L21/0276 , H01L21/0332 , H01L21/0337 , H01L21/0338 , H01L21/3081 , H01L21/3086 , H01L21/3088 , H01L21/3146
摘要： A method of etching a substrate is provided. The method of etching a substrate includes transferring a pattern into the substrate using a double patterned amorphous carbon layer on the substrate as a hardmask. Optionally, a non-carbon based layer is deposited on the amorphous carbon layer as a capping layer before the pattern is transferred into the substrate.
摘要翻译：提供蚀刻基板的方法。蚀刻基板的方法包括使用基板上的双图案化非晶碳层作为硬掩模将图案转印到基板中。任选地，在将图案转移到基底内之前，将非碳基层沉积在无定形碳层上作为覆盖层。

93. 发明申请

US20090044753A1 METHODS TO IMPROVE THE IN-FILM DEFECTIVITY OF PECVD AMORPHOUS CARBON FILMS 有权
标题翻译：提高PECVD非晶碳膜薄膜缺陷度的方法
公开(公告)号：US20090044753A1
公开(公告)日：2009-02-19
申请号：US12255638
申请日：2008-10-21
申请人： Deenesh Padhi , Chiu Chan , Sudha Rathi , Ganesh Balasubramanian , Jianhua Zhou , Karthik Janakiraman , Martin J. Seamons , Visweswaren Sivaramakrishnan , Derek R. Witty , Hichem M'Saad
发明人： Deenesh Padhi , Chiu Chan , Sudha Rathi , Ganesh Balasubramanian , Jianhua Zhou , Karthik Janakiraman , Martin J. Seamons , Visweswaren Sivaramakrishnan , Derek R. Witty , Hichem M'Saad
IPC分类号： H01L21/30
CPC分类号： C23C16/45565 , C23C16/0254 , C23C16/26 , C23C16/4404
摘要： An article having a protective coating for use in semiconductor applications and methods for making the same are provided. In certain embodiments, a method of coating an aluminum surface of an article utilized in a semiconductor processing chamber is provided. The method comprises providing a processing chamber; placing the article into the processing chamber; flowing a first gas comprising a carbon source into the processing chamber; flowing a second gas comprising a nitrogen source into the processing chamber; forming a plasma in the chamber; and depositing a coating material on the aluminum surface. In certain embodiments, the coating material comprises an amorphous carbon nitrogen containing layer. In certain embodiments, the article comprises a showerhead configured to deliver a gas to the processing chamber.
摘要翻译：提供了具有用于半导体应用的保护涂层的制品及其制造方法。在某些实施例中，提供了在半导体处理室中使用的制品的铝表面的涂覆方法。该方法包括提供处理室; 将物品放入处理室; 将包含碳源的第一气体流入所述处理室; 将包含氮源的第二气体流入所述处理室; 在室内形成等离子体; 以及在铝表面上沉积涂层材料。在某些实施方案中，涂层材料包含无定形含碳氮层。在某些实施例中，制品包括构造成将气体输送到处理室的喷头。

94. 发明申请

US20070132054A1 MEMORY CELL HAVING STRESSED LAYERS 失效
标题翻译：具有压力层的记忆体
公开(公告)号：US20070132054A1
公开(公告)日：2007-06-14
申请号：US11609851
申请日：2006-12-12
申请人： Reza Arghavani , Ellie Yieh , Hichem M'Saad
发明人： Reza Arghavani , Ellie Yieh , Hichem M'Saad
IPC分类号： H01L29/00
CPC分类号： H01L29/7846 , H01L27/105 , H01L27/1052 , H01L29/66825 , H01L29/7883
摘要： A memory cell comprises a p-doped substrate with a pair of spaced apart n-doped regions on the substrate that form a source and drain about the channel. A stack of layers on the channel comprises, in sequence, (i) a tunnel oxide layer, (ii) a floating gate, (iii) an inter-gate dielectric, and (iv) a control gate. A polysilicon layer is on the source and drain. A cover layer covering the stack of layers comprises a spacer layer and a pre-metal-deposition layer. Optionally, contacts are used to contact each of the source, drain, and silicide layers, and each have exposed portions. A shallow isolation trench is provided about n-doped regions, the trench comprising a stressed silicon oxide layer having a tensile stress of at least about 200 MPa. The stressed layer reduces leakage of charge held in the floating gate during operation of the memory cell.
摘要翻译：存储单元包括在基板上具有一对间隔开的n掺杂区域的p掺杂衬底，其在沟道周围形成源极和漏极。通道上的层叠层包括（i）隧道氧化物层，（ii）浮动栅极，（iii）栅极间电介质和（iv）控制栅极。源极和漏极上的多晶硅层。覆盖层叠层的覆盖层包括间隔层和预金属沉积层。可选地，使用触点来接触源极，漏极和硅化物层中的每一个，并且每个都具有暴露部分。围绕n掺杂区域提供浅的隔离沟槽，沟槽包括具有至少约200MPa的拉伸应力的应力氧化硅层。应力层在存储器单元的操作期间减少了保持在浮动栅极中的电荷的泄漏。

95. 发明授权

US07018941B2 Post treatment of low k dielectric films 有权
标题翻译：后处理低k电介质膜
公开(公告)号：US07018941B2
公开(公告)日：2006-03-28
申请号：US10830203
申请日：2004-04-21
申请人： Zhenjiang Cui , Josephine J. Chang , Alexandros T. Demos , Reza Arghavani , Derek R. Witty , Helen R. Armer , Girish A. Dixit , Hichem M'Saad
发明人： Zhenjiang Cui , Josephine J. Chang , Alexandros T. Demos , Reza Arghavani , Derek R. Witty , Helen R. Armer , Girish A. Dixit , Hichem M'Saad
IPC分类号： H01L21/31 , H01L21/461
CPC分类号： H01L21/31633 , H01L21/02126 , H01L21/02216 , H01L21/02274 , H01L21/02348 , H01L21/02351
摘要： A method of depositing a low dielectric constant film on a substrate and post-treating the low dielectric constant film is provided. The post-treatment includes rapidly heating the low dielectric constant film to a desired high temperature and then rapidly cooling the low dielectric constant film such that the low dielectric constant film is exposed to the desired high temperature for about five seconds or less. In one aspect, the post-treatment also includes exposing the low dielectric constant film to an electron beam treatment and/or UV radiation.
摘要翻译：提供了一种在衬底上沉积低介电常数膜并对低介电常数膜进行后处理的方法。后处理包括将低介电常数膜快速加热到期望的高温，然后快速冷却低介电常数膜，使得低介电常数膜暴露于所需的高温约5秒或更短。一方面，后处理还包括将低介电常数膜暴露于电子束处理和/或UV辐射。

96. 发明申请

US20050089293A1 HDP-CVD film for uppercladding application in optical waveguides 审中-公开
标题翻译：用于在光波导中应用的HDP-CVD膜
公开(公告)号：US20050089293A1
公开(公告)日：2005-04-28
申请号：US10997715
申请日：2004-11-24
申请人： Hichem M'Saad
发明人： Hichem M'Saad
IPC分类号： C23C16/40 , G02B6/12 , G02B6/132 , G02B6/10
CPC分类号： C23C16/401 , G02B6/132 , G02B2006/12097
摘要： An optical waveguide is formed on a substrate by first depositing an undercladding layer over the substrate. At least one core is formed over the undercladding layer. An uppercladding layer is then formed over the cores with a high-density plasma process. Deposition of the uppercladding layer may proceed by flowing an oxygen-containing gas, such as O2, a silicon-containing gas, such as SiH4, and a fluorine-containing gas, such as SiF4, into a process chamber to produce a gaseous mixture. A high-density plasma, i.e. having a density of at least 1011 ions/cm3, is generated from the gaseous mixture and then used to deposit a fluorinated silicate glass layer.
摘要翻译：通过首先在衬底上沉积下封层，在衬底上形成光波导。在下封层上形成至少一个芯。然后用高密度等离子体工艺在芯上形成上层。上层的沉积可以通过使诸如SO 2的含氧气体，例如SiH 4 O 3等含氧气体和含氟气体气体，例如SiF 4 N，进入处理室以产生气态混合物。从气体混合物产生高密度等离子体，即具有至少10 11 / cm 3的密度，然后用于沉积氟化硅酸盐玻璃层。

97. 发明授权

US06399489B1 Barrier layer deposition using HDP-CVD 有权
标题翻译：使用HDP-CVD进行阻挡层沉积
公开(公告)号：US06399489B1
公开(公告)日：2002-06-04
申请号：US09431411
申请日：1999-11-01
申请人： Hichem M'Saad , Seon Mee Cho , Dana Tribula
发明人： Hichem M'Saad , Seon Mee Cho , Dana Tribula
IPC分类号： C23C16/50 , C23C16/32 , H01L21/205 , H01L21/314 , H01L21/316 , H01L21/768 , H01L23/522 , H01L21/44
CPC分类号： C23C16/325 , H01L21/314 , H01L21/3146 , Y10S438/931
摘要： A method of depositing a film, such as a barrier layer, on a substrate using a gaseous mixture including a hydrocarbon-containing gas and a silicon-containing gas. Suitable hydrocarbon-containing gases include alkanes such as methane (CH4), ethane (C2H6), butane (C3H8), propane (C4H10), etc. Suitable silicon-containing gases include silanes such as monosilane (SiH4). The method generally comprises providing a suitable gaseous mixture to the chamber, generating a plasma from the gaseous mixture, and depositing a film onto the substrate using the plasma. In a preferred embodiment, the film is deposited in a high-density plasma chemical vapor deposition (HDP-CVD) system. The gaseous mixture typically includes a silicon containing gas, such as an alkane, and a hydrocarbon containing gas, such as a silane. Embodiments of the method of the present invention can integrated stack structures having overall dielectric constant of about 4.0 or less. Such a structure may include a barrier layer having a dielectric constant of 4.5 or less.
摘要翻译：使用包含含烃气体和含硅气体的气体混合物在衬底上沉积诸如阻挡层的膜的方法。合适的含烃气体包括烷烃如甲烷（CH4），乙烷（C2H6），丁烷（C3H8），丙烷（C4H10）等。合适的含硅气体包括硅烷如硅烷（SiH 4）。该方法通常包括向腔室提供合适的气体混合物，从气体混合物产生等离子体，以及使用等离子体将膜沉积到衬底上。在优选的实施方案中，膜以高密度等离子体化学气相沉积（HDP-CVD）系统沉积。气态混合物通常包括含硅气体，例如烷烃，和含烃气体，例如硅烷。本发明方法的实施方案可以具有总体介电常数为约4.0或更小的堆叠结构。这种结构可以包括介电常数为4.5或更小的阻挡层。

98. 发明申请

US20130213574A1 METHOD AND SYSTEM FOR SUPPLYING A CLEANING GAS INTO A PROCESS CHAMBER 有权
公开(公告)号：US20130213574A1
公开(公告)日：2013-08-22
申请号：US13676820
申请日：2012-11-14
申请人： Ramprakash Sankarakrishnan , Dale R. Du Bois , Ganesh Balasubramanian , Karthik Janakiraman , Juan Carlos Rocha-Alvarez , Thomas Nowak , Visweswaren Sivaramakrishnan , Hichem M'Saad
发明人： Ramprakash Sankarakrishnan , Dale R. Du Bois , Ganesh Balasubramanian , Karthik Janakiraman , Juan Carlos Rocha-Alvarez , Thomas Nowak , Visweswaren Sivaramakrishnan , Hichem M'Saad
IPC分类号： B08B7/00
CPC分类号： F16K31/0655 , B08B5/00 , B08B7/0021 , C23C16/4405 , C23C16/4409 , C23C16/45561 , F16K1/221 , F16K1/224 , F16K31/06 , F16K31/088 , Y10S438/905
摘要： A method and apparatus for cleaning a process chamber are provided. In one embodiment, a process chamber is provided that includes a remote plasma source and a process chamber having at least two processing regions. Each processing region includes a substrate support assembly disposed in the processing region, a gas distribution system configured to provide gas into the processing region above the substrate support assembly, and a gas passage configured to provide gas into the processing region below the substrate support assembly. A first gas conduit is configured to flow a cleaning agent from the remote plasma source through the gas distribution assembly in each processing region while a second gas conduit is configured to divert a portion of the cleaning agent from the first gas conduit to the gas passage of each processing region.

99. 发明申请

US20110104400A1 METHOD FOR DEPOSITING AN AMORPHOUS CARBON FILM WITH IMPROVED DENSITY AND STEP COVERAGE 审中-公开
标题翻译：用改进的密度和步骤覆盖沉积非晶碳膜的方法
公开(公告)号：US20110104400A1
公开(公告)日：2011-05-05
申请号：US12987688
申请日：2011-01-10
申请人： Deenesh Padhi , Hyoung-Chan Ha , Sudha Rathi , Derek R. Witty , Chiu Chan , Sohyun Park , Ganesh Balasubramanian , Karthik Janakiraman , Martin Jay Seamons , Visweswaren Sivaramakrishnan , Bok Hoen Kim , Hichem M'Saad
发明人： Deenesh Padhi , Hyoung-Chan Ha , Sudha Rathi , Derek R. Witty , Chiu Chan , Sohyun Park , Ganesh Balasubramanian , Karthik Janakiraman , Martin Jay Seamons , Visweswaren Sivaramakrishnan , Bok Hoen Kim , Hichem M'Saad
IPC分类号： C23C26/00 , H05H1/24
CPC分类号： H01L21/02115 , C23C16/045 , C23C16/26 , C23C16/5096 , C23C16/56 , H01L21/02274 , H01L21/31144 , H01L21/3146
摘要： A method for depositing an amorphous carbon layer on a substrate includes the steps of positioning a substrate in a chamber, introducing a hydrocarbon source into the processing chamber, introducing a heavy noble gas into the processing chamber, and generating a plasma in the processing chamber. The heavy noble gas is selected from the group consisting of argon, krypton, xenon, and combinations thereof and the molar flow rate of the noble gas is greater than the molar flow rate of the hydrocarbon source. A post-deposition termination step may be included, wherein the flow of the hydrocarbon source and the noble gas is stopped and a plasma is maintained in the chamber for a period of time to remove particles therefrom.
摘要翻译：在基板上沉积无定形碳层的方法包括以下步骤：将基板定位在室中，将烃源引入处理室，将重稀有气体引入处理室，以及在处理室中产生等离子体。重稀土气体选自氩，氪，氙及其组合，惰性气体的摩尔流量大于烃源的摩尔流量。可以包括沉积终止步骤，其中停止烃源和惰性气体的流动，并且将等离子体保持在室中一段时间以从中除去颗粒。

100. 发明授权

US07638440B2 Method of depositing an amorphous carbon film for etch hardmask application 有权
标题翻译：沉积用于蚀刻硬掩模应用的无定形碳膜的方法
公开(公告)号：US07638440B2
公开(公告)日：2009-12-29
申请号：US10799146
申请日：2004-03-12
申请人： Yuxiang May Wang , Sudha S. R. Rathi , Michael Chiu Kwan , Hichem M'Saad
发明人： Yuxiang May Wang , Sudha S. R. Rathi , Michael Chiu Kwan , Hichem M'Saad
IPC分类号： H01L21/31 , H01L21/469
CPC分类号： G03F7/094 , G03F7/091 , H01L21/02115 , H01L21/02274 , H01L21/0276 , H01L21/31122 , H01L21/31144 , H01L21/76802 , H01L21/7681 , H01L21/76829 , H01L21/7684
摘要： Methods are provided for depositing amorphous carbon materials. In one aspect, the invention provides a method for processing a substrate including forming a dielectric material layer on a surface of the substrate, depositing an amorphous carbon layer on the dielectric material layer by introducing a processing gas comprises one or more hydrocarbon compounds and an argon carrier gas, and generating a plasma of the processing gas by applying power from a dual-frequency RF source, etching the amorphous carbon layer to form a patterned amorphous carbon layer, and etching feature definitions in the dielectric material layer corresponding to the patterned amorphous carbon layer. The amorphous carbon layer may act as an etch stop, an anti-reflective coating, or both.
摘要翻译：提供了沉积无定形碳材料的方法。一方面，本发明提供了一种处理衬底的方法，包括在衬底的表面上形成介电材料层，通过引入包含一种或多种烃化合物和氩气的处理气体在电介质材料层上沉积无定形碳层并且通过从双频RF源施加电力来产生处理气体的等离子体，蚀刻无定形碳层以形成图案化的非晶碳层，并且在对应于图案化无定形碳的电介质材料层中蚀刻特征定义层。无定形碳层可用作蚀刻停止层，抗反射涂层或两者。

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