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1. 发明授权

US06399489B1 Barrier layer deposition using HDP-CVD 有权
标题翻译：使用HDP-CVD进行阻挡层沉积
公开(公告)号：US06399489B1
公开(公告)日：2002-06-04
申请号：US09431411
申请日：1999-11-01
申请人： Hichem M'Saad , Seon Mee Cho , Dana Tribula
发明人： Hichem M'Saad , Seon Mee Cho , Dana Tribula
IPC分类号： C23C16/50 , C23C16/32 , H01L21/205 , H01L21/314 , H01L21/316 , H01L21/768 , H01L23/522 , H01L21/44
CPC分类号： C23C16/325 , H01L21/314 , H01L21/3146 , Y10S438/931
摘要： A method of depositing a film, such as a barrier layer, on a substrate using a gaseous mixture including a hydrocarbon-containing gas and a silicon-containing gas. Suitable hydrocarbon-containing gases include alkanes such as methane (CH4), ethane (C2H6), butane (C3H8), propane (C4H10), etc. Suitable silicon-containing gases include silanes such as monosilane (SiH4). The method generally comprises providing a suitable gaseous mixture to the chamber, generating a plasma from the gaseous mixture, and depositing a film onto the substrate using the plasma. In a preferred embodiment, the film is deposited in a high-density plasma chemical vapor deposition (HDP-CVD) system. The gaseous mixture typically includes a silicon containing gas, such as an alkane, and a hydrocarbon containing gas, such as a silane. Embodiments of the method of the present invention can integrated stack structures having overall dielectric constant of about 4.0 or less. Such a structure may include a barrier layer having a dielectric constant of 4.5 or less.
摘要翻译：使用包含含烃气体和含硅气体的气体混合物在衬底上沉积诸如阻挡层的膜的方法。合适的含烃气体包括烷烃如甲烷（CH4），乙烷（C2H6），丁烷（C3H8），丙烷（C4H10）等。合适的含硅气体包括硅烷如硅烷（SiH 4）。该方法通常包括向腔室提供合适的气体混合物，从气体混合物产生等离子体，以及使用等离子体将膜沉积到衬底上。在优选的实施方案中，膜以高密度等离子体化学气相沉积（HDP-CVD）系统沉积。气态混合物通常包括含硅气体，例如烷烃，和含烃气体，例如硅烷。本发明方法的实施方案可以具有总体介电常数为约4.0或更小的堆叠结构。这种结构可以包括介电常数为4.5或更小的阻挡层。

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