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    • 95. 发明申请
    • Trench isolation methods of semiconductor device
    • 半导体器件的沟槽隔离方法
    • US20060240636A1
    • 2006-10-26
    • US11358454
    • 2006-02-21
    • Hyuk-Ju RyuHeon-Jong ShinHee-Sung KangChoong-Ryul RyouMu-Kyeng JungKyung-Soo Kim
    • Hyuk-Ju RyuHeon-Jong ShinHee-Sung KangChoong-Ryul RyouMu-Kyeng JungKyung-Soo Kim
    • H01L21/76
    • H01L21/76237H01L21/76224H01L21/823878
    • In a trench isolation method, a semiconductor substrate having an N-MOS region and a P-MOS region is prepared. A first mask pattern exposing an N-MOS field region is formed on the N-MOS region, and a second mask pattern exposing a P-MOS field region is formed on the P-MOS region. A first photoresist pattern is formed to cover the P-MOS region and expose the N-MOS region. First impurity ions are implanted into the N-MOS region, using the first mask pattern and the first photoresist pattern as ion implantation masks, thereby forming a first impurity layer in the N-MOS field region. In this case, a portion of the first impurity layer is formed to extend below the first mask pattern. The first photoresist pattern is removed. The semiconductor substrate is etched using the first and second mask patterns as etch masks, thereby forming trenches in the N-MOS field region and the P-MOS field region and concurrently, forming a first impurity pattern of the first impurity layer remaining below the first mask pattern. A trench isolation layer filling the trenches is then formed.
    • 在沟槽隔离方法中,制备具有N-MOS区和P-MOS区的半导体衬底。 在N-MOS区形成露出N-MOS场区的第一掩模图案,在P-MOS区形成露出P-MOS场区的第二掩模图案。 形成第一光致抗蚀剂图案以覆盖P-MOS区域并暴露N-MOS区域。 使用第一掩模图案和第一光致抗蚀剂图案作为离子注入掩模将第一杂质离子注入到N-MOS区域中,从而在N-MOS场区域中形成第一杂质层。 在这种情况下,第一杂质层的一部分形成为延伸到第一掩模图案的下方。 去除第一光致抗蚀剂图案。 使用第一和第二掩模图案作为蚀刻掩模蚀刻半导体衬底,从而在N-MOS场区和P-MOS场区中形成沟槽,同时,形成第一杂质图案的第一杂质图案保留在第一 掩模图案。 然后形成填充沟槽的沟槽隔离层。
    • 100. 发明授权
    • Integrated circuit built-in type supply power delay circuit
    • 集成电路内置式电源延时电路
    • US5886550A
    • 1999-03-23
    • US877408
    • 1997-06-16
    • Jong-Kee KwonGyu-Dong KimOok KimChang-Jun OhJong-Ryul LeeWon-Chul SongKyung-Soo Kim
    • Jong-Kee KwonGyu-Dong KimOok KimChang-Jun OhJong-Ryul LeeWon-Chul SongKyung-Soo Kim
    • G11C5/14H03K17/22
    • H03K17/223
    • An integrated circuit built-in type power delay circuit which is capable of supplying a stable supply power to each circuit of the integrated circuit by generating a supply power control signal voltage after a predetermined time. The circuit includes a receiving unit for receiving a supply voltage VDD and charging the same, a supplying unit for supplying a current, an inverting unit for inverting an output value from the charging unit, a switching unit controlled in accordance with an output value from the inverting unit for switching an output from the current supply unit, a current regenerating unit for receiving a control of the switching unit and discharging an output value from the charging unit, an electric potential value conversion unit controlled by an output value from the inverting unit for converting an output value from the charging unit into a low level, and a buffering unit for receiving an output value from the inverting unit for buffering the output value and outputting a non-inverted signal.
    • 一种集成电路内置型功率延迟电路,其能够通过在预定时间之后产生电源功率控制信号电压来向集成电路的每个电路提供稳定的供电。 该电路包括:接收单元,用于接收电源电压VDD并对其进行充电;提供单元,用于提供电流;反相单元,用于反转来自充电单元的输出值;开关单元,根据来自 用于切换来自电流供应单元的输出的反相单元,用于接收开关单元的控制并从充电单元放电输出值的电流再生单元,由来自反相单元的输出值控制的电位值转换单元, 将来自充电单元的输出值转换为低电平;以及缓冲单元,用于从反相单元接收输出值,用于缓冲输出值并输出非反相信号。