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    • 92. 发明申请
    • SYSTEMS HAVING WRITER WITH DEEPER WRAP AROUND SHIELD AND METHODS FOR MAKING THE SAME
    • 具有写入深度的写入器的系统及其制造方法
    • US20110096434A1
    • 2011-04-28
    • US12975157
    • 2010-12-21
    • Wen-Chien D. HsiaoAron PentekThomas J.A. Roucoux
    • Wen-Chien D. HsiaoAron PentekThomas J.A. Roucoux
    • G11B21/02G11B5/10
    • G11B5/1278G11B5/3116G11B5/3146G11B5/315G11B5/3163
    • A method according to one embodiment includes etching an underlayer positioned under a main pole for reducing a thickness thereof and creating an undercut under the main pole; adding a gap material along sides of the main pole and in the undercut; and forming a shield along at least a portion of the gap material. A magnetic head according to one embodiment includes a main pole; an underlayer positioned under the main pole and spaced therefrom, thereby defining an undercut therebetween; a first layer of gap material extending along sides of the main pole and in the undercut; a second layer of gap material extending continuously along the underlayer under the main pole; and a shield encircling the main pole, wherein the shield extends between the first and second layers of gap material in the undercut. Additional systems and methods are also presented.
    • 根据一个实施例的方法包括蚀刻位于主极下方的底层以减小其厚度并在主极下方产生底切; 在主杆的侧面和底切处添加间隙材料; 以及沿所述间隙材料的至少一部分形成屏蔽。 根据一个实施例的磁头包括主极; 位于主极下方并与其间隔开的底层,从而在其间限定底切; 第一层间隙材料沿主极和底切部分的侧面延伸; 沿着主极下方的底层连续延伸的第二层间隙材料; 以及围绕所述主极的屏蔽件,其中所述屏蔽件在所述底切部中在所述第一和第二间隙材料层之间延伸。 还介绍了其他系统和方法。
    • 100. 发明申请
    • Recessed SiO2 or Si3N4 overcoat for GMR head in magnetic disk drive
    • 用于磁盘驱动器中的GMR磁头的嵌入式SiO2或Si3N4外涂层
    • US20050264949A1
    • 2005-12-01
    • US10857036
    • 2004-05-28
    • Yunxiao GaoAron PentekAlan TamSue Zhang
    • Yunxiao GaoAron PentekAlan TamSue Zhang
    • G11B5/127G11B5/31G11B5/33
    • G11B5/3136G11B5/3106G11B5/3133G11B5/3163Y10T29/49043Y10T29/49044Y10T29/49046Y10T29/49048Y10T29/49052
    • A giant magnetoresistive (GMR) head contains an overcoat layer consisting of silicon dioxide or silicon nitride. These materials have a coefficient of thermal expansion (CTE) that is less than alumina, which is conventionally used for the overcoat layer. As a result, the overcoat layer exhibits a smaller temperature-induced protrusion when the head heats up from friction with the passing air stream. The process of forming the head includes forming a recess in the overcoat layer that reduces the stress on the poles and improves the performance of the head. The process includes depositing a seed layer over the overcoat layer in preparation to plating a metal mask layer with an opening where the recess is to be formed, wet chemical etching the seed layer through the opening in the mask layer and performing an ion milling process to remove any remaining traces of the seed layer. With the seed layer completely removed, a trench having smooth sidewalls and bottom can be etched in the overcoat layer by a reactive ion etch (RIE) process. The saw that is used to separate the head elements in the wafer can be passed through the clean trench without contacting the overcoat layer, thereby avoiding the chipping and cracking that might otherwise result from the use of a silicon dioxide or silicon nitride overcoat layer.
    • 巨磁阻(GMR)磁头包含由二氧化硅或氮化硅组成的外涂层。 这些材料的热膨胀系数(CTE)小于通常用于外涂层的氧化铝。 结果,当头部与通过的空气流的摩擦加热时,外涂层表现出较小的温度引起的突起。 形成头部的过程包括在外涂层中形成凹陷,其减小了磁极上的应力并提高了磁头的性能。 该方法包括在外涂层上沉积种子层,以准备对具有要形成凹部的开口镀金属掩模层,通过掩模层中的开口湿化学蚀刻晶种层并执行离子铣削加工 去除种子层的剩余痕迹。 随着种子层完全去除,可以通过反应离子蚀刻(RIE)工艺在覆盖层中蚀刻具有平滑侧壁和底部的沟槽。 用于分离晶片中的头元件的锯可以通过干净的沟槽而不与外涂层接触,从而避免由于使用二氧化硅或氮化硅外涂层而导致的切屑和裂纹。