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91. 发明授权

US06203926B1 Corrosion-free multi-layer conductor 失效
标题翻译：无腐蚀多层导体
公开(公告)号：US06203926B1
公开(公告)日：2001-03-20
申请号：US09473142
申请日：1999-12-28
申请人： Umar Moez Uddin Ahmad , Harsaran Singh Bhatia , Satya Pal Singh Bhatia , Hormazdyar Minocher Dalal , William Henry Price , Sampath Purushothaman
发明人： Umar Moez Uddin Ahmad , Harsaran Singh Bhatia , Satya Pal Singh Bhatia , Hormazdyar Minocher Dalal , William Henry Price , Sampath Purushothaman
IPC分类号： H01L2912
CPC分类号： H01L23/49811 , C23C14/042 , H01L21/4846 , H01L23/498 , H01L23/49866 , H01L2924/0002 , H01L2924/09701 , H05K3/143 , H05K3/244 , Y10S148/105 , Y10T428/12528 , Y10T428/12743 , Y10T428/1275 , Y10T428/12806 , Y10T428/12819 , Y10T428/12861 , Y10T428/12875 , Y10T428/12882 , Y10T428/12896 , Y10T428/12903 , Y10T428/1291 , H01L2924/00
摘要： A corrosion resistant, multi-layer structure on a substrate including an adhesion metallic layer on the substrate, a cushion metallic layer on the adhesion layer, a diffusion barrier layer on the cushion layer, and an impermeable gold layer that encapsulates all the layers, is substantially even on all sides of the layers, and contacts a region on the substrate adjacent the layers to prevent oxidation and corrosion.
摘要翻译：在基材上具有粘附金属层，粘合层上的缓冲金属层，缓冲层上的扩散阻挡层以及封装所有层的不渗透金层的基板上的耐腐蚀性多层结构是基本上均匀地在层的所有侧面上，并且接触邻近层的衬底上的区域以防止氧化和腐蚀。

92. 发明授权

US5981970A Thin-film field-effect transistor with organic semiconductor requiring low operating voltages 失效
公开(公告)号：US5981970A
公开(公告)日：1999-11-09
申请号：US827018
申请日：1997-03-25
申请人： Christos Dimitrios Dimitrakopoulos , Peter Richard Duncombe , Bruce K. Furman , Robert B. Laibowitz , Deborah Ann Neumayer , Sampath Purushothaman
发明人： Christos Dimitrios Dimitrakopoulos , Peter Richard Duncombe , Bruce K. Furman , Robert B. Laibowitz , Deborah Ann Neumayer , Sampath Purushothaman
IPC分类号： H01L21/316 , H01L29/786 , H01L51/05 , H01L51/10 , H01L51/30 , H01L35/24
CPC分类号： H01L51/0525 , H01L21/31691 , H01L51/0052 , H01L51/0545
摘要： A thin film transistor (TFT) device structure based on an organic semiconductor material, that exhibits a high field effect mobility, high current modulation and a low sub-threshold slope at lower operating voltages than the current state of the art organic TFT devices. The structure comprises a suitable substrate disposed with he following sequence of features: a set of conducting gate electrodes covered with a high dielectric constant insulator, a layer of the organic semiconductor, sets of electrically conducting source and drain electrodes corresponding to each of the gate lines, and an optional passivation layer that can overcoat and protect the device structure.Use of high dielectric constant gate insulators exploits the unexpected gate voltage dependence of the organic semiconductor to achieve high field effect mobility levels at very low operating voltages. Judicious combinations of the choice of this insulator material and the means to integrate it into the TFT structure are taught that would enable easy fabrication on glass or plastic substrates and the use of such devices in flat panel display applications.

93. 发明授权

US5922466A Composite comprising a metal substrate and a corrosion protecting layer 失效
标题翻译：复合材料包括金属基底和腐蚀保护层
公开(公告)号：US5922466A
公开(公告)日：1999-07-13
申请号：US928468
申请日：1997-09-12
申请人： Marie Angelopoulos , Vlasta A. Brusic , Teresita Ordonez Graham , Sampath Purushothaman , Ravi F. Saraf , Jane Margaret Shaw , Judith Marie Roldan , Alfred Viehbeck
发明人： Marie Angelopoulos , Vlasta A. Brusic , Teresita Ordonez Graham , Sampath Purushothaman , Ravi F. Saraf , Jane Margaret Shaw , Judith Marie Roldan , Alfred Viehbeck
IPC分类号： C08G61/12 , C08L33/00 , C08L65/00 , C09D5/08 , C09D5/24 , C09J9/02 , H01B1/12 , H01B1/22 , H01B1/24 , H05K3/32 , H05K9/00 , B32B15/08
CPC分类号： H05K9/0083 , C08G61/12 , C08L65/00 , C09D5/08 , C09D5/24 , C09J9/02 , H01B1/125 , H01B1/127 , H01B1/128 , H01B1/22 , H01B1/24 , H05K3/321 , H05K9/0079 , H05K9/0088 , C08L33/00 , H05K2201/0329 , Y10S428/901 , Y10T428/24917 , Y10T428/25 , Y10T428/31529 , Y10T428/31533 , Y10T428/31605 , Y10T428/31663 , Y10T428/31678 , Y10T428/31681 , Y10T428/31692 , Y10T428/31721 , Y10T428/31725 , Y10T428/31855
摘要： A composite comprising a metal substrate and as a corrosion protecting layer on at least one major surface of said substrate, a composition comprising a thermoset or thermoplastic polymeric matrix, and a conductive filler component, where said filler component comprises electrically conductive particles.
摘要翻译：一种复合材料，其包含金属基材和作为所述基材的至少一个主表面上的腐蚀保护层，包含热固性或热塑性聚合物基质的组合物和导电填料组分，其中所述填料组分包含导电颗粒。

94. 发明授权

US5916486A Method for providing discharge protection or shielding 失效
标题翻译：提供放电保护或屏蔽的方法
公开(公告)号：US5916486A
公开(公告)日：1999-06-29
申请号：US928496
申请日：1997-09-12
申请人： Marie Angelopoulos , Vlasta A. Brusic , Teresita Ordonez Graham , Sampath Purushothaman , Ravi F. Saraf , Jane Margaret Shaw , Judith Marie Roldan , Alfred Viehbeck
发明人： Marie Angelopoulos , Vlasta A. Brusic , Teresita Ordonez Graham , Sampath Purushothaman , Ravi F. Saraf , Jane Margaret Shaw , Judith Marie Roldan , Alfred Viehbeck
IPC分类号： C08G61/12 , C08L33/00 , C08L65/00 , C09D5/08 , C09D5/24 , C09J9/02 , H01B1/12 , H01B1/22 , H01B1/24 , H05K3/32 , H05K9/00 , B05D5/12 , B29D9/00
CPC分类号： H05K9/0083 , C08G61/12 , C08L65/00 , C09D5/08 , C09D5/24 , C09J9/02 , H01B1/125 , H01B1/127 , H01B1/128 , H01B1/22 , H01B1/24 , H05K3/321 , H05K9/0079 , H05K9/0088 , C08L33/00 , H05K2201/0329 , Y10S428/901 , Y10T428/24917 , Y10T428/25 , Y10T428/31529 , Y10T428/31533 , Y10T428/31605 , Y10T428/31663 , Y10T428/31678 , Y10T428/31681 , Y10T428/31692 , Y10T428/31721 , Y10T428/31725 , Y10T428/31855
摘要： Electrostatic discharge protection and electromagnetic interference shielding is provided by applying to a dielectric substrate a composition comprising a polymeric matrix and a conductive filler component. The conductive filler component comprises electrically conductive metal particles and at least one electrically conducting polymer.
摘要翻译：通过向电介质基片施加包含聚合物基质和导电填料组分的组合物来提供静电放电保护和电磁干扰屏蔽。导电填料组分包括导电金属颗粒和至少一种导电聚合物。

95. 发明授权

US5700398A Composition containing a polymer and conductive filler and use thereof 失效
标题翻译：含有聚合物和导电填料的组合物及其用途
公开(公告)号：US5700398A
公开(公告)日：1997-12-23
申请号：US356026
申请日：1994-12-14
申请人： Marie Angelopoulos , Vlasta A. Brusic , Teresita Ordonez Graham , Sampath Purushothaman , Ravi F. Saraf , Jane Margaret Shaw , Judith Marie Roldan , Alfred Viehbeck
发明人： Marie Angelopoulos , Vlasta A. Brusic , Teresita Ordonez Graham , Sampath Purushothaman , Ravi F. Saraf , Jane Margaret Shaw , Judith Marie Roldan , Alfred Viehbeck
IPC分类号： C08G61/12 , C08L33/00 , C08L65/00 , C09D5/08 , C09D5/24 , C09J9/02 , H01B1/12 , H01B1/22 , H01B1/24 , H05K3/32 , H05K9/00 , H01B1/06
CPC分类号： H05K9/0083 , C08G61/12 , C08L65/00 , C09D5/08 , C09D5/24 , C09J9/02 , H01B1/125 , H01B1/127 , H01B1/128 , H01B1/22 , H01B1/24 , H05K3/321 , H05K9/0079 , H05K9/0088 , C08L33/00 , H05K2201/0329 , Y10S428/901 , Y10T428/24917 , Y10T428/25 , Y10T428/31529 , Y10T428/31533 , Y10T428/31605 , Y10T428/31663 , Y10T428/31678 , Y10T428/31681 , Y10T428/31692 , Y10T428/31721 , Y10T428/31725 , Y10T428/31855
摘要： A composition containing a polymeric matrix and a conductive filler component is provided. The conductive filler component comprises conductive particles and a polymer selected from the group consisting of substituted and unsubstituted polyanilines, substituted and unsubstituted polyparaphenylenevinylenes, substituted and unsubstituted polythiophenes, substituted and unsubstituted polyazines, substituted and unsubstituted polyparaphenylenes, substituted and unsubstituted polyfuranes, substituted and unsubstituted polypyrroles, substituted and unsubstituted polyselenophene, substituted and unsubstituted poly-p-phenylene sulfides and substiututed and unsubstituted polyacetylenes, and mixtures thereof, and copolymers thereof. Compositions of the present invention are useful as corrosion protecting layers for metal substrates, for electrostatic discharge protection, electromagnetic interference shielding, and as adhesives for interconnect technology as alternatives to solder interconnections. In addition, films of polyanilines are useful as corrosion protecting layers with or without the conductive metal particles.
摘要翻译：提供含有聚合物基质和导电填料组分的组合物。导电填料组分包括导电颗粒和选自取代和未取代的聚苯胺，取代和未取代的聚对亚苯基亚乙烯基，取代和未取代的聚噻吩，取代和未取代的聚吡嗪，取代和未取代的聚对苯二甲酸，取代和未取代的聚呋喃，取代和未取代的聚吡咯取代和未取代的聚硒吩，取代和未取代的聚对苯硫醚和取代和未取代的聚乙炔，及其混合物，及其共聚物。本发明的组合物可用作金属基材的防腐层，用于静电放电保护，电磁干扰屏蔽，以及作为焊接互连替代物的互连技术的粘合剂。此外，聚苯胺的膜可用作具有或不具有导电金属颗粒的防腐蚀层。

96. 发明授权

US5633047A Electronic devices having metallurgies containing copper-semiconductor compounds 失效
标题翻译：具有包含铜半导体化合物的冶金的电子器件
公开(公告)号：US5633047A
公开(公告)日：1997-05-27
申请号：US449196
申请日：1995-05-24
申请人： Michael J. Brady , Curtis E. Farrell , Sung K. Kang , Jeffrey R. Marino , Donald J. Mikalsen , Paul A. Moskowitz , Eugene J. O'Sullivan , Terrence R. O'Toole , Sampath Purushothaman , Sheldon C. Rieley , George F. Walker
发明人： Michael J. Brady , Curtis E. Farrell , Sung K. Kang , Jeffrey R. Marino , Donald J. Mikalsen , Paul A. Moskowitz , Eugene J. O'Sullivan , Terrence R. O'Toole , Sampath Purushothaman , Sheldon C. Rieley , George F. Walker
IPC分类号： C23C18/50 , C25D3/54 , H01L23/495 , H01L23/532 , B05D1/18
CPC分类号： H01L24/12 , C23C18/50 , C25D3/54 , H01L23/4951 , H01L23/53271 , H01L24/05 , H01L24/48 , H01L2224/0401 , H01L2224/04042 , H01L2224/05644 , H01L2224/05647 , H01L2224/13099 , H01L2224/32014 , H01L2224/32245 , H01L2224/45124 , H01L2224/45144 , H01L2224/45147 , H01L2224/48091 , H01L2224/48247 , H01L2224/4826 , H01L2224/48465 , H01L2224/4847 , H01L2224/48644 , H01L2224/48647 , H01L2224/48747 , H01L2224/48844 , H01L2224/48847 , H01L2224/73215 , H01L2224/85201 , H01L2224/85205 , H01L2224/85214 , H01L24/45 , H01L2924/01006 , H01L2924/01011 , H01L2924/01013 , H01L2924/01014 , H01L2924/01015 , H01L2924/01019 , H01L2924/01022 , H01L2924/01023 , H01L2924/01024 , H01L2924/01028 , H01L2924/01029 , H01L2924/01032 , H01L2924/01033 , H01L2924/01042 , H01L2924/01047 , H01L2924/0105 , H01L2924/01051 , H01L2924/01074 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/01083 , H01L2924/01327 , H01L2924/014 , H01L2924/10253 , H01L2924/10329 , H01L2924/12032 , H01L2924/12042 , H01L2924/14 , H01L2924/15747 , H01L2924/15787 , H01L2924/181
摘要： Silicon and germanium containing materials are used at surface of conductors in electronic devices. Solder can be fluxlessly bonded and wires can be wire bonded to these surfaces. These material are used as a surface coating for lead frames for packaging integrated circuit chips. These materials can be decal transferred onto conductor surfaces or electrolessly or electrolytically disposed thereon.
摘要翻译：在电子设备中的导体的表面使用含锗和锗的材料。焊料可无焊接，电线可以与这些表面引线接合。这些材料用作用于封装集成电路芯片的引线框架的表面涂层。这些材料可以贴花地转移到导体表面上，或者无电解或电解地放置在其上。

97. 发明授权

US5427983A Process for corrosion free multi-layer metal conductors 失效
标题翻译：无腐蚀多层金属导体的工艺
公开(公告)号：US5427983A
公开(公告)日：1995-06-27
申请号：US997827
申请日：1992-12-29
申请人： Umar M. U. Ahmad , Harsaran S. Bhatia , Satya P. S. Bhatia , Hormazdyar M. Dalal , William H. Price , Sampath Purushothaman
发明人： Umar M. U. Ahmad , Harsaran S. Bhatia , Satya P. S. Bhatia , Hormazdyar M. Dalal , William H. Price , Sampath Purushothaman
IPC分类号： H01L21/203 , C23C14/04 , C23C28/02 , H01L21/48 , H01L21/52 , H01L23/12 , H01L23/498 , H05K1/09 , H05K3/14 , H05K3/24 , H01L21/44
CPC分类号： H01L23/49811 , C23C14/042 , H01L21/4846 , H01L23/498 , H01L23/49866 , H01L2924/0002 , H01L2924/09701 , H05K3/143 , H05K3/244 , Y10S148/105 , Y10T428/12528 , Y10T428/12743 , Y10T428/1275 , Y10T428/12806 , Y10T428/12819 , Y10T428/12861 , Y10T428/12875 , Y10T428/12882 , Y10T428/12896 , Y10T428/12903 , Y10T428/1291
摘要： A thin-layer metallization structure in which the final gold layer is deposited by evaporation with the surface onto which it is evaporated maintained at an elevated temperature. By evaporating the uppermost gold layer of the structure at an elevated substrate temperature, the gold atoms have a higher mobility, causing the deposited gold to spread over the edge of the structure and cover the otherwise exposed edges, including the edge at the copper interface.
摘要翻译：其中通过蒸发沉积最终金层的薄层金属化结构与蒸发的表面保持在升高的温度。通过在升高的基板温度下蒸发结构的最上层的金层，金原子具有更高的迁移率，导致沉积的金铺展在结构的边缘上并且覆盖否则暴露的边缘，包括在铜界面处的边缘。

98. 发明授权

US5367195A Structure and method for a superbarrier to prevent diffusion between a noble and a non-noble metal 失效
标题翻译：用于防止贵金属和非贵金属之间扩散的超级隔离物的结构和方法
公开(公告)号：US5367195A
公开(公告)日：1994-11-22
申请号：US1524
申请日：1993-01-08
申请人： Giulio DiGiacomo , Jung-Ihl Kim , Chandrasekhar Narayan , Sampath Purushothaman
发明人： Giulio DiGiacomo , Jung-Ihl Kim , Chandrasekhar Narayan , Sampath Purushothaman
IPC分类号： H01L23/12 , H01L21/28 , H01L23/485 , H01L23/498 , H01L23/532 , H01L29/43 , H05K1/09 , H05K3/24 , H05K3/34 , H05K3/38 , H01L23/48 , H01L29/46 , H01L29/62 , H01L29/64
CPC分类号： H01L24/05 , H01L23/49811 , H01L23/49866 , H01L23/532 , H01L24/03 , H01L24/48 , H05K3/244 , H01L2224/04042 , H01L2224/05084 , H01L2224/05124 , H01L2224/05147 , H01L2224/05155 , H01L2224/05157 , H01L2224/05166 , H01L2224/0517 , H01L2224/05172 , H01L2224/05179 , H01L2224/0518 , H01L2224/05181 , H01L2224/05184 , H01L2224/05611 , H01L2224/05644 , H01L2224/05664 , H01L2224/05669 , H01L2224/05673 , H01L2224/48463 , H01L2224/4847 , H01L2224/85201 , H01L2224/85205 , H01L2224/85444 , H01L2224/85815 , H01L2924/00014 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01014 , H01L2924/01022 , H01L2924/01023 , H01L2924/01024 , H01L2924/01027 , H01L2924/01028 , H01L2924/01029 , H01L2924/01033 , H01L2924/0104 , H01L2924/01041 , H01L2924/01042 , H01L2924/01045 , H01L2924/01046 , H01L2924/01047 , H01L2924/0105 , H01L2924/01072 , H01L2924/01073 , H01L2924/01074 , H01L2924/01075 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/01083 , H01L2924/01327 , H01L2924/014 , H01L2924/05042 , H01L2924/09701 , H01L2924/10253 , H01L2924/12042 , H01L2924/15787 , H05K3/388
摘要： This invention relates generally to structure and method for preventing metal diffusion between a noble metal layer and an adjoining non-noble metal layer, and more specifically to new structures and methods for providing a superbarrier structure between copper and an adjoining noble metal layer. This is achieved by sequentially deposited a layer of non-noble metal, a layer of titanium, a layer of molybdenum, and a layer of noble or relatively less noble metal as the interconnecting metallurgy. This invention also relates to an improved multilayer metallurgical pad or metallurgical structure for mating at least a portion of a pin or a connector or a wire to a substrate.
摘要翻译：本发明一般涉及用于防止贵金属层与相邻的非贵金属层之间的金属扩散的结构和方法，更具体地涉及在铜和邻接的贵金属层之间提供超级结构的新结构和方法。这是通过依次沉积一层非贵金属，一层钛，一层钼，以及一层贵重或相对较低贵重金属作为互连冶金而实现的。本发明还涉及用于将销或连接器或电线的至少一部分配合到衬底的改进的多层冶金垫或冶金结构。

99. 发明授权

US5304284A Methods for etching a less reactive material in the presence of a more reactive material 失效
标题翻译：在更多反应性材料存在下蚀刻较少反应性材料的方法
公开(公告)号：US5304284A
公开(公告)日：1994-04-19
申请号：US785445
申请日：1991-10-18
申请人： Rangarajan Jagannathan , Sampath Purushothaman , Scott A. Sikorski
发明人： Rangarajan Jagannathan , Sampath Purushothaman , Scott A. Sikorski
IPC分类号： C23F1/44 , C01B7/19 , C23F1/10 , H01L21/306 , H01L21/3213 , H01L21/00
CPC分类号： C01B7/196 , C01B7/191 , C23F1/10 , H01L21/32136
摘要： A method is described for providing a body of first material and a body of second material in a chemical environment wherein the first material contains first constituents having a lower and higher oxidation state and wherein the second material contains constituents having an oxidation state of energy greater than lower oxidation state of the first constituent. The environment is further provided with first cations energetically disposed for receiving electrons from the first constituents but not energetically disposed for receiving electrons from the second constituents. Electrons transfer from the first constituents to the first cations which are transformed thereby into second cations of lower oxidation state resulting in first body releasing into the environment third cations which are cations of the first (lower) oxidation state of the first constituent. The environment is further provided with an agent which consumes the second and third cations thereby permitting release into the environment additional ones of the third cations resulting in the first body being preferably etched with respect to the second body. The method is useful to etch copper in the presence of more highly reactive materials such as chrome, lead, tin, titanium, aluminum, iron, cobalt, and galvanically more active gold and nickel. The method is useful for forming structures containing copper having an overlying layer of the more highly reactive material without the requirement of the use of a resist material.
摘要翻译：描述了一种用于在化学环境中提供第一材料体和第二材料体的方法，其中所述第一材料包含具有较低和较高氧化态的第一组分，并且其中所述第二材料含有能量的氧化态大于较低的第一成分的氧化态。所述环境还具有能量地设置用于接收来自所述第一成分的电子的第一阳离子，但未被能量地设置以接收来自所述第二组分的电子。电子从第一组分转移到第一阳离子，由此将其转化为较低氧化态的第二阳离子，导致第一体体向第一组分的第一（较低）氧化态的阳离子释放出第三阳离子。环境还具有消耗第二和第三阳离子从而允许释放到环境中的试剂，优选地，相对于第二体蚀刻第一体的另外的第三阳离子。该方法可用于在更高反应性的材料如铬，铅，锡，钛，铝，铁，钴和电流更活泼的金和镍的存在下蚀刻铜。该方法可用于形成含有具有更高反应性材料的上层的铜的结构，而不需要使用抗蚀剂材料。

100. 发明授权

US5167913A Method of forming an adherent layer of metallurgy on a ceramic substrate 失效
标题翻译：在陶瓷基板上形成冶金粘附层的方法
公开(公告)号：US5167913A
公开(公告)日：1992-12-01
申请号：US813244
申请日：1991-12-23
申请人： John Acocella , Philip L. Flaitz , Raj N. Master , Chandrasekhar Narayan , Sarah H. Knickerbocker , Paul H. Palmateer , Sampath Purushothaman , Srinivasa S. N. Reddy
发明人： John Acocella , Philip L. Flaitz , Raj N. Master , Chandrasekhar Narayan , Sarah H. Knickerbocker , Paul H. Palmateer , Sampath Purushothaman , Srinivasa S. N. Reddy
IPC分类号： H01L21/48 , H05K1/09 , H05K3/12 , H05K3/18 , H05K3/38 , H05K3/46
CPC分类号： H05K3/1291 , H01L21/4846 , H01L21/486 , H05K1/092 , H05K2203/1126 , H05K3/4629 , Y10T428/12528 , Y10T428/12611
摘要： A method of forming an adherent layer of metallurgy on a ceramic substrate which includes the steps of obtaining a ceramic material containing a polymeric binder and copper metallurgy patterns within the ceramic body. In one embodiment of the invention, the ceramic body also contains MgO.Thereafter, a surface layer of metallurgy is formed on the surface of the ceramic body. In one embodiment, the surface layer is nickel and in another embodiment, the surface layer is copper or gold.Then, the ceramic body undergoes a sintering cycle which includes the steps of pyrolysis, binder burnoff and, lastly, densification and, in some cases, crystallization. During densification and crystallization, there is a predetermined steam atmosphere which meets the following requirements: a partial pressure of oxygen less than that necessary to satisfy the equilibrium equation 4Cu+O.sub.2 =2Cu.sub.2 O; and a partial pressure of oxygen less than or equal to that necessary to satisfy the equilibrium equation 2Ni+O.sub.2 =2NiO for nickel in said surface metallurgy.
摘要翻译：一种在陶瓷基板上形成冶金粘附层的方法，包括以下步骤：在陶瓷体内获得含有聚合物粘合剂和铜冶金图案的陶瓷材料。在本发明的一个实施例中，陶瓷体还含有MgO。此后，在陶瓷体的表面上形成表面冶金层。在一个实施方案中，表面层是镍，在另一个实施方案中，表面层是铜或金。然后，陶瓷体经历烧结循环，其包括热解，粘合剂燃烧的步骤，最后是致密化，在某些情况下，结晶。在致密化和结晶过程中，有一个预定的蒸气气氛满足以下要求：氧气分压小于满足平衡方程式4Cu + O2 = 2Cu2O所需的氧分压; 以及小于或等于满足所述表面冶金中镍的平衡方程式2Ni + O2 = 2NiO所需的氧分压。

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