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1. 发明授权

US06525427B2 BEOL decoupling capacitor 有权
公开(公告)号：US06525427B2
公开(公告)日：2003-02-25
申请号：US10055704
申请日：2002-01-22
申请人： Peter Richard Duncombe , Daniel Charles Edelstein , Robert Benjamin Laibowitz , Deborah Ann Neumayer , Tak Hung Ning , Robert Rosenberg , Thomas Mcarraoll Shaw
发明人： Peter Richard Duncombe , Daniel Charles Edelstein , Robert Benjamin Laibowitz , Deborah Ann Neumayer , Tak Hung Ning , Robert Rosenberg , Thomas Mcarraoll Shaw
IPC分类号： H01L2348
CPC分类号： H01L28/55 , H01L21/31691 , H01L23/5223 , H01L23/5329 , H01L23/642 , H01L2924/0002 , H01L2924/00
摘要： An amorphous dielectric material having a dielectric constant of 10 or greater is provided herein for use in fabricating capacitors in integrated circuit applications. The amorphous dielectric material is formed using temperatures below 450° C.; therefore the BEOL metallurgy is not adversely affected. The amorphous dielectric material of the present invention exhibits good conformality and a low leakage current. Damascene devices containing the capacitor of the present invention are also disclosed.

2. 发明授权

US06172385B2 Multilayer ferroelectric capacitor structure 失效
标题翻译：多层铁电电容器结构
公开(公告)号：US06172385B2
公开(公告)日：2001-01-09
申请号：US09183413
申请日：1998-10-30
申请人： Peter Richard Duncombe , Robert Benjamin Laibowitz , Deborah Ann Neumayer , Katherine Lynn Saenger , Thomas Mcarraoll Shaw
发明人： Peter Richard Duncombe , Robert Benjamin Laibowitz , Deborah Ann Neumayer , Katherine Lynn Saenger , Thomas Mcarraoll Shaw
IPC分类号： H01L2972
CPC分类号： H01L28/56 , H01L21/31691
摘要： Multilayer ferroelectric capacitor structures comprising a ferroelectric film having a combination of different ferroelectric materials or compositions such as strontium bismuth tantalate, strontium bismuth niobate, bismuth titanate, strontium bismuth tantalate niobate, lead zirconate titanate, lead lanthanum zirconate titanate are disclosed. A method of preparing the multilayer ferroelectric film containing at least two different ferroelectric materials and/or more than one composition of ferroelectric material is also disclosed.
摘要翻译：公开了包括具有不同铁电材料或组合物如铁酸锶铋铋，铌酸铋铋，钛酸铋，铌酸铋钽酸锶，锆钛酸铅，锆钛酸镧钛的组合的铁电体膜的多层铁电体电容器结构。还公开了制备含有至少两种不同铁电材料和/或多于一种铁电材料组合物的多层铁电薄膜的方法。

3. 发明授权

US5981970A Thin-film field-effect transistor with organic semiconductor requiring low operating voltages 失效
公开(公告)号：US5981970A
公开(公告)日：1999-11-09
申请号：US827018
申请日：1997-03-25
申请人： Christos Dimitrios Dimitrakopoulos , Peter Richard Duncombe , Bruce K. Furman , Robert B. Laibowitz , Deborah Ann Neumayer , Sampath Purushothaman
发明人： Christos Dimitrios Dimitrakopoulos , Peter Richard Duncombe , Bruce K. Furman , Robert B. Laibowitz , Deborah Ann Neumayer , Sampath Purushothaman
IPC分类号： H01L21/316 , H01L29/786 , H01L51/05 , H01L51/10 , H01L51/30 , H01L35/24
CPC分类号： H01L51/0525 , H01L21/31691 , H01L51/0052 , H01L51/0545
摘要： A thin film transistor (TFT) device structure based on an organic semiconductor material, that exhibits a high field effect mobility, high current modulation and a low sub-threshold slope at lower operating voltages than the current state of the art organic TFT devices. The structure comprises a suitable substrate disposed with he following sequence of features: a set of conducting gate electrodes covered with a high dielectric constant insulator, a layer of the organic semiconductor, sets of electrically conducting source and drain electrodes corresponding to each of the gate lines, and an optional passivation layer that can overcoat and protect the device structure.Use of high dielectric constant gate insulators exploits the unexpected gate voltage dependence of the organic semiconductor to achieve high field effect mobility levels at very low operating voltages. Judicious combinations of the choice of this insulator material and the means to integrate it into the TFT structure are taught that would enable easy fabrication on glass or plastic substrates and the use of such devices in flat panel display applications.

4. 发明授权

US06344660B1 Thin-film field-effect transistor with organic semiconductor requiring low operating voltages 有权
标题翻译：具有需要低工作电压的有机半导体的薄膜场效应晶体管
公开(公告)号：US06344660B1
公开(公告)日：2002-02-05
申请号：US09323804
申请日：1999-06-02
申请人： Christos Dimitrios Dimitrakopoulos , Peter Richard Duncombe , Bruce K. Furman , Robert B. Laibowitz , Deborah Ann Neumayer , Sampath Purushothaman
发明人： Christos Dimitrios Dimitrakopoulos , Peter Richard Duncombe , Bruce K. Furman , Robert B. Laibowitz , Deborah Ann Neumayer , Sampath Purushothaman
IPC分类号： H01L3524
CPC分类号： H01L51/0525 , H01L21/31691 , H01L51/0052 , H01L51/0545
摘要： A thin film transistor (TFT) device structure based on an organic semiconductor material, that exhibits a high field effect mobility, high current modulation and a low sub-threshold slope at lower operating voltages than the current state of the art organic TFT devices. The structure comprises a suitable substrate disposed with he following sequence of features: a set of conducting gate electrodes covered with a high dielectric constant insulator, a layer of the organic semiconductor, sets of electrically conducting source and drain electrodes corresponding to each of the gate lines, and an optional passivation layer that can overcoat and protect the device structure. Use of high dielectric constant gate insulators exploits the unexpected gate voltage dependence of the organic semiconductor to achieve high field effect mobility levels at very low operating voltages. Judicious combinations of the choice of this insulator material and the means to integrate it into the TFT structure are taught that would enable easy fabrication on glass or plastic substrates and the use of such devices in flat panel display applications.
摘要翻译：一种基于有机半导体材料的薄膜晶体管（TFT）器件结构，其在比现有技术的有机TFT器件的当前状态更低的工作电压下表现出高场效应迁移率，高电流调制和低子阈值斜率。该结构包括合适的衬底，其具有以下特征序列：一组覆盖有高介电常数绝缘体的导电栅极电极，有机半导体层，对应于每条栅极线的导电源极和漏极电极组，以及可以覆盖和保护器件结构的可选钝化层。使用高介电常数栅极绝缘体利用有机半导体的意想不到的栅极电压依赖性，以在非常低的工作电压下实现高场效应迁移率水平。教导了将这种绝缘体材料的选择和将其集成到TFT结构中的手段的合理组合，这将使得能够容易地在玻璃或塑料基板上制造以及在平板显示器应用中使用这种装置。

5. 发明授权

US06255122B1 Amorphous dielectric capacitors on silicon 失效
标题翻译：硅上无定形介质电容器
公开(公告)号：US06255122B1
公开(公告)日：2001-07-03
申请号：US09300185
申请日：1999-04-27
申请人： Peter Richard Duncombe , Robert Benjamin Laibowitz , Deborah Ann Neumayer , Thomas McCarroll Shaw
发明人： Peter Richard Duncombe , Robert Benjamin Laibowitz , Deborah Ann Neumayer , Thomas McCarroll Shaw
IPC分类号： H01L2100
CPC分类号： H01L28/55
摘要： High-capacity capacitors and gate insulators exhibiting moderately high dielectric constants with surprisingly low leakage using amorphous or low temperature films of perovskite type oxides including a titanate system material such as barium titanate, strontium titanate, barium strontium titanate (BST), lead titanate, lead zirconate titanate, lead lanthanum zirconate titanate, barium lanthanum titanate, a niobate, aluminate or tantalate system material such as lead magnesium niobate, lithium niobate lithium tantalate, potassium niobate and potassium tantalum niobate, a tungsten-bronze system material such as barium strontium niobate, lead barium niobate, barium titanium niobate, and Bi-layered perovskite system material such as strontium bismuth tantalate, bismuth titanate deposited directly on a silicon surface at temperatures about 450° C. or less.
摘要翻译：具有中等高介电常数的大容量电容器和栅极绝缘体，具有惊人的低泄漏性，使用包括钛酸钡系钛酸钡，钛酸锶钡，钛酸钡锶（BST），钛酸铅，铅的钛酸盐体系材料的钙钛矿型氧化物的非晶或低温膜钛酸镧锆钛酸铅，钛酸镧钛酸镧，铌酸盐，铝酸盐或钽酸盐体系材料，如铌酸铅镁，铌酸锂锂钽酸锂，铌酸钾和铌酸钾钾，钨 - 青铜系材料如铌酸锶钡，铅铌酸钡，铌酸钡钡和Bi-层状钙钛矿系材料如钽酸锶铋钛酸铋直接沉积在硅表面上，温度约450℃或更低。

6. 发明授权

US6002031A Metal alkoxyalkoxidecarboxylates and use to form films 失效
标题翻译：烷氧基烷氧基碳酸金属盐，用于形成膜
公开(公告)号：US6002031A
公开(公告)日：1999-12-14
申请号：US148613
申请日：1998-09-04
申请人： Peter Richard Duncombe , Deborah Ann Neumayer
发明人： Peter Richard Duncombe , Deborah Ann Neumayer
IPC分类号： C07C53/126 , C07F19/00 , C07F3/00 , C07F15/00
CPC分类号： C07C53/126
摘要： Metal alkoxyalkoxidecarboxylates wherein the alkoxy portion has 2-6 carbon atoms and the alkoxide portion has 2-6 carbon atoms are provided and are useful in forming films on a substrate.
摘要翻译：提供了烷氧基部分具有2-6个碳原子并且醇盐部分具有2-6个碳原子的金属烷氧基烷氧基化羧酸盐，并且可用于在基材上形成膜。

7. 发明授权

US5946551A Fabrication of thin film effect transistor comprising an organic semiconductor and chemical solution deposited metal oxide gate dielectric 失效
标题翻译：包括有机半导体和化学溶液沉积的金属氧化物栅极电介质的薄膜效应晶体管的制造
公开(公告)号：US5946551A
公开(公告)日：1999-08-31
申请号：US827015
申请日：1997-03-25
申请人： Christos Dimitrios Dimitrakopoulos , Peter Richard Duncombe , Bruce K. Furman , Robert B. Laibowitz , Deborah Ann Neumayer , Sampath Purushothaman
发明人： Christos Dimitrios Dimitrakopoulos , Peter Richard Duncombe , Bruce K. Furman , Robert B. Laibowitz , Deborah Ann Neumayer , Sampath Purushothaman
IPC分类号： H01L21/314 , H01L21/316 , H01L51/05 , H01L51/30 , H01L51/40
CPC分类号： H01L21/31691 , H01L51/0525 , H01L51/0052 , H01L51/0545
摘要： A thin film transistor (TFT) device structure based on an organic semiconductor material, that exhibits a high field effect mobility, high current modulation and a low sub-threshold slope at lower operating voltages than the current state of the art organic TFT devices. A fabrication process for the same, especially a process for deposition of the gate insulator using chemical solutions. The structure comprises a suitable substrate disposed with the following sequence of features: a set of conducting gate electrodes covered with a high dielectric constant insulator, a layer of the organic semiconductor, sets of electrically conducting source and drain electrodes corresponding to each of the gate lines, and an optional passivation layer that can overcoat and protect the device structure. Use of high dielectric constant gate insulators exploits the unexpected gate voltage dependence of the organic semiconductor to achieve high field effect mobility levels at very low operating voltages. Judicious combinations of the choice of this insulator material and the means to integrate it into the TFT structure are taught that would enable easy fabrication on glass or plastic substrates and the use of such devices in flat panel display applications.
摘要翻译：一种基于有机半导体材料的薄膜晶体管（TFT）器件结构，其在比现有技术的有机TFT器件的当前状态更低的工作电压下表现出高场效应迁移率，高电流调制和低子阈值斜率。其制造方法，特别是使用化学溶液沉积栅极绝缘体的工艺。该结构包括以下列顺序排列的合适的衬底：一组由高介电常数绝缘体覆盖的导电栅极电极，有机半导体层，对应于每条栅极线的一组导电源极和漏极电极，以及可以覆盖和保护器件结构的可选钝化层。使用高介电常数栅极绝缘体利用有机半导体的意想不到的栅极电压依赖性，以在非常低的工作电压下实现高场效应迁移率水平。教导了将这种绝缘体材料的选择和将其集成到TFT结构中的手段的合理组合，这将使得能够容易地在玻璃或塑料基板上制造以及在平板显示器应用中使用这种装置。

8. 发明授权

US06777809B2 BEOL decoupling capacitor 有权
标题翻译： BEOL去耦电容
公开(公告)号：US06777809B2
公开(公告)日：2004-08-17
申请号：US10323132
申请日：2002-12-19
申请人： Peter Richard Duncombe , Daniel Charles Edelstein , Robert Benjamin Laibowitz , Deborah Ann Neumayer , Tak Hung Ning , Robert Rosenberg , Thomas Mcarraoll Shaw
发明人： Peter Richard Duncombe , Daniel Charles Edelstein , Robert Benjamin Laibowitz , Deborah Ann Neumayer , Tak Hung Ning , Robert Rosenberg , Thomas Mcarraoll Shaw
IPC分类号： H01L2348
CPC分类号： H01L28/55 , H01L21/31691 , H01L23/5223 , H01L23/5329 , H01L23/642 , H01L2924/0002 , H01L2924/00
摘要： An amorphous dielectric material having a dielectric constant of 10 or greater is provided herein for use in fabricating capacitors in integrated circuit applications. The amorphous dielectric material is formed using temperatures below 450° C.; therefore the BEOL metallurgy is not adversely affected. The amorphous dielectric material of the present invention exhibits good conformality and a low leakage current. Damascene devices containing the capacitor of the present invention are also disclosed.
摘要翻译：本文提供介电常数为10或更大的非晶介质材料用于制造集成电路应用中的电容器。使用低于450℃的温度形成非晶介质材料; 因此，BEOL冶金不会受到不利影响。本发明的非晶质介电材料表现出良好的共形性和低的漏电流。还公开了包含本发明的电容器的镶嵌装置。

9. 发明授权

US5962654A Alkoxyalkoxides and use to form films 失效
标题翻译： Alkoxyalkoxides和用于形成电影
公开(公告)号：US5962654A
公开(公告)日：1999-10-05
申请号：US16793
申请日：1998-01-30
申请人： Peter Richard Duncombe , Deborah Ann Neumayer
发明人： Peter Richard Duncombe , Deborah Ann Neumayer
IPC分类号： C07C43/13 , C07F7/00 , C23C18/12 , C07F5/00 , C07F2/00 , C07F19/00
CPC分类号： C23C18/1216 , C07C43/13 , C07F7/006
摘要： Metal alkoxyalkoxides wherein the alkoxy portion has 3-6 carbon atoms and the alkoxide portion has 2-6 carbon atoms are provided and are useful in forming films on a substrate.
摘要翻译：提供其中烷氧基部分具有3-6个碳原子并且醇盐部分具有2-6个碳原子的金属烷氧基烷氧化物，并且可用于在基材上形成膜。

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