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91. 发明申请

US20080263721A9 Genomic plant sequences and uses thereof 有权
公开(公告)号：US20080263721A9
公开(公告)日：2008-10-23
申请号：US11595983
申请日：2006-11-13
申请人： Andrey Boukharov , Yongwei Cao , Stanton Dotson , Jeffrey Koshi , David Kovalic , Jingdong Liu , James McIninch , Wei Wu
发明人： Andrey Boukharov , Yongwei Cao , Stanton Dotson , Jeffrey Koshi , David Kovalic , Jingdong Liu , James McIninch , Wei Wu
IPC分类号： A01H5/00 , C07H21/04
CPC分类号： C12N15/8216 , C07K14/415 , C12N15/8227
摘要： The present invention discloses rice genomic promoter sequences. The promoters are particularly suited for use in rice and other cereal crops. Methods of modifying, producing, and using the promoters are also disclosed. The invention further discloses compositions, transformed host cells, transgenic plants, and seeds containing the rice genomic promoter sequences, and methods for preparing and using the same.

92. 发明申请

US20080237886A1 Three-dimensional crossbar array systems and methods for writing information to and reading information stored in three-dimensional crossbar array junctions 有权
标题翻译：用于将信息写入和读取存储在三维交叉列阵列结点中的信息的三维交叉列阵列系统和方法
公开(公告)号：US20080237886A1
公开(公告)日：2008-10-02
申请号：US11729228
申请日：2007-03-28
申请人： Wei Wu , R. Stanley Williams , Warren Robinett , Gregory S. Snider , Zhaoning Yu , Shih-Yuan Wang , Duncan Stewart
发明人： Wei Wu , R. Stanley Williams , Warren Robinett , Gregory S. Snider , Zhaoning Yu , Shih-Yuan Wang , Duncan Stewart
IPC分类号： H01L23/48
CPC分类号： H01L27/101 , B82Y10/00 , G11C13/00 , G11C13/0023 , G11C13/0033 , G11C2213/71 , G11C2213/79 , G11C2213/81 , H01L2924/0002 , Y10S977/762 , H01L2924/00
摘要： Various embodiments of the present invention are directed to three-dimensional crossbar arrays. In one aspect of the present invention, a three-dimensional crossbar array includes a plurality of crossbar arrays, a first demultiplexer, a second demultiplexer, and a third demultiplexer. Each crossbar array includes a first layer of nanowires, a second layer of nanowires overlaying the first layer of nanowires, and a third layer of nanowires overlaying the second layer of nanowires. The first demultiplexer is configured to address nanowires in the first layer of nanowires of each crossbar array, the second demultiplexer is configured to address nanowires in the second layer of nanowires of each crossbar array, and the third demultiplexer is configured to supply a signal to the nanowires in the third layer of nanowires of each crossbar array.
摘要翻译：本发明的各种实施例涉及三维横杆阵列。在本发明的一个方面，三维交叉开关阵列包括多个交叉开关阵列，第一解复用器，第二解复用器和第三解复用器。每个横杆阵列包括第一纳米线层，覆盖第一纳米线层的第二纳米线层和覆盖第二纳米线层的第三层纳米线。第一解复用器被配置为寻址每个交叉列阵列的纳米线的第一层中的纳米线，第二解复用器被配置为寻址每个交叉列阵列的第二纳米线层中的纳米线，并且第三解复用器被配置为向纳米线在每个交叉列阵列的第三层纳米线中。

93. 发明申请

US20080237568A1 Methods of making nano-scale structures having controlled size, nanowire structures and methods of making the nanowire structures 有权
标题翻译：具有受控尺寸的纳米级结构的方法，纳米线结构以及制造纳米线结构的方法
公开(公告)号：US20080237568A1
公开(公告)日：2008-10-02
申请号：US11730486
申请日：2007-04-02
申请人： Nobuhiko Kobayashi , Wei Wu , Duncan R. Stewart , Shashank Sharma , Shih-Yuan Wang , R. Stanley Williams
发明人： Nobuhiko Kobayashi , Wei Wu , Duncan R. Stewart , Shashank Sharma , Shih-Yuan Wang , R. Stanley Williams
IPC分类号： H01L29/06 , H01L21/20
CPC分类号： H01L31/035281 , B82Y10/00 , B82Y30/00 , H01L29/0665 , H01L29/0673 , H01L29/068 , H01L31/036 , H01L31/09 , H01L31/101 , H01L31/105 , Y02E10/50 , Y10S977/762 , Y10S977/814
摘要： Methods of making nanometer-scale semiconductor structures with controlled size are disclosed. Semiconductor structures that include one or more nanowires are also disclosed. The nanowires can include a passivation layer or have a hollow tube structure.
摘要翻译：公开了制备具有受控尺寸的纳米级半导体结构的方法。还公开了包括一个或多个纳米线的半导体结构。纳米线可以包括钝化层或具有中空管结构。

94. 发明申请

US20080181557A1 Apparatus and method for subterranean distribution of optical signals 有权
标题翻译：光信号地下分布的装置和方法
公开(公告)号：US20080181557A1
公开(公告)日：2008-07-31
申请号：US11701159
申请日：2007-01-31
申请人： Shih-Yuan Wang , Raymond G. Beausoleil , Wei Wu , Sean M. Spillane
发明人： Shih-Yuan Wang , Raymond G. Beausoleil , Wei Wu , Sean M. Spillane
IPC分类号： G02B6/12
CPC分类号： G02B6/12004 , G02B6/12002 , G02B6/43
摘要： Systems and methods for subterranean distribution of optical signals on integrated circuits are disclosed. A semiconductor device comprising a multi-layer substrate includes a surface layer and a subterranean layer. Electrical devices are formed in the surface layer. Optoelectronic devices may be formed in the subterranean layer or the surface layer and configured for converting electrical signals to optical signals or converting optical signals to electrical signals. At least one optical waveguide is formed in the subterranean layer and configured for transmitting optical signals through the subterranean layer. Electrical vias may be included for coupling electrical signals between the subterranean layer and the surface layer. In addition, optical vias may be for coupling optical signals between the subterranean layer and the surface layer
摘要翻译：公开了用于集成电路上的光信号的地下分布的系统和方法。包括多层基底的半导体器件包括表面层和地下层。电器件形成在表层。光电子器件可以形成在地层或表面层中并且被配置用于将电信号转换为光信号或将光信号转换为电信号。在地下层中形成至少一个光波导，并配置成用于通过地下层传输光信号。可以包括电气通孔用于耦合地下层和表面层之间的电信号。此外，光学通孔可以用于耦合地层和表面层之间的光信号

95. 外观设计

USD574086S1 Control device 有权
公开(公告)号：USD574086S1
公开(公告)日：2008-07-29
申请号：US29302314
申请日：2008-01-15
申请人： Wei Wu
设计人： Wei Wu

96. 发明申请

US20080094629A1 Optical gratings, lithography tools including such optical gratings and methods for using same for alignment 失效
标题翻译：光栅，包括这种光栅的光刻工具和用于对准的方法
公开(公告)号：US20080094629A1
公开(公告)日：2008-04-24
申请号：US11584461
申请日：2006-10-20
申请人： Wei Wu , Warren Robinett , Shih-Yuan Wang , Jun Gao , Zhaoning Yu
发明人： Wei Wu , Warren Robinett , Shih-Yuan Wang , Jun Gao , Zhaoning Yu
IPC分类号： G01B11/00
CPC分类号： G03F9/7049 , G03F9/7003
摘要： Lithography tools and substrates are aligned by generating geometric interference patterns using optical gratings associated with the lithography tools and substrates. In some embodiments, the relative position between a substrate and lithography tool is adjusted to cause at least one geometric shape to have a predetermined size or shape representing acceptable alignment. In additional embodiments, Moiré patterns that exhibit varying sensitivity are used to align substrates and lithography tools. Furthermore, lithography tools and substrates are aligned by causing radiation to interact with optical gratings positioned between the lithography tools and substrates. Lithography tools include an optical grating configured to generate a portion of an interference pattern that exhibits a sensitivity that increases as the relative position between the tools and a substrate moves towards a predetermined alignment position.
摘要翻译：通过使用与光刻工具和衬底相关的光栅产生几何干涉图案来对准平版印刷工具和衬底。在一些实施例中，调整衬底和光刻工具之间的相对位置以使得至少一个几何形状具有表示可接受对准的预定尺寸或形状。在另外的实施例中，使用呈现不同灵敏度的莫尔图案来对准衬底和光刻工具。此外，光刻工具和衬底通过使辐射与位于光刻工具和衬底之间的光栅相互作用来对准。平版印刷工具包括光栅，其被配置为产生表现出灵敏度的一部分干涉图案，该灵敏度随着工具和基板之间的相对位置朝向预定对准位置移动而增加。

97. 发明申请

US20080090160A1 Alignment for contact lithography 审中-公开
标题翻译：接触光刻对准
公开(公告)号：US20080090160A1
公开(公告)日：2008-04-17
申请号：US11580639
申请日：2006-10-13
申请人： Jason Blackstock , Wei Wu , Zhiyong Li
发明人： Jason Blackstock , Wei Wu , Zhiyong Li
IPC分类号： G03C5/00
CPC分类号： G03F7/0002 , B82Y10/00 , B82Y40/00 , G03F9/7038 , G03F9/7042 , G03F9/7053
摘要： A contact lithography system includes a patterning tool having a pattern for transfer to a substrate; and a sensor disposed on the patterning tool for sensing a magnetic pattern disposed on the substrate to determine alignment between the patterning tool and the substrate. A method of aligning a patterning tool of a contact lithography system with a substrate includes detecting a pattern of magnetic material on the substrate with a sensor on the patterning tool to determine alignment of the patterning tool with respect to the substrate.
摘要翻译：接触光刻系统包括具有用于转移到衬底的图案的图案形成工具; 以及设置在所述图案形成工具上的传感器，用于感测设置在所述衬底上的磁性图案，以确定所述图案形成工具和所述衬底之间的对将接触式光刻系统的图案形成工具对准衬底的方法包括在图案形成工具上用传感器检测衬底上的磁性材料的图案，以确定图案形成工具相对于衬底的对准。

98. 发明申请

US20080090155A1 Deformation-based contact lithography systems, apparatus and methods 有权
标题翻译：基于变形的接触光刻系统，设备和方法
公开(公告)号：US20080090155A1
公开(公告)日：2008-04-17
申请号：US11548975
申请日：2006-10-12
申请人： Duncan R. Stewart , Robert Walmsley , Peter G. Hartwell , Wei Wu
发明人： Duncan R. Stewart , Robert Walmsley , Peter G. Hartwell , Wei Wu
IPC分类号： G03F1/00
CPC分类号： G03F7/0002 , B82Y10/00 , B82Y40/00 , G03F1/38 , G03F1/50
摘要： One or more of a contact lithography module, a pattern tool and a substrate include a strain control region to prevent deformation-related misalignment.
摘要翻译：接触光刻模块，图案工具和基板中的一个或多个包括用于防止变形相关的未对准的应变控制区域。

99. 发明申请

US20080084006A1 HYDRAULIC-FACILITATED CONTACT LITHOGRAPHY APPARATUS, SYSTEM AND METHOD 失效
标题翻译：液压辅助接触平面设备，系统和方法
公开(公告)号：US20080084006A1
公开(公告)日：2008-04-10
申请号：US11548216
申请日：2006-10-10
申请人： Jun Gao , Wei Wu , Carl Picciotto
发明人： Jun Gao , Wei Wu , Carl Picciotto
IPC分类号： B29C59/00
CPC分类号： G03F7/2014 , B82Y10/00 , B82Y40/00 , G03F7/0002
摘要： A contact lithography apparatus, system and method use a hydraulic deformation to facilitate pattern transfer. The apparatus, system and method include a spacer that provides a spaced apart proximal orientation of lithographic elements, and a hydraulic force member that provides the hydraulic deformation. One or more of the lithographic elements and the spacer is deformable, such that hydraulic deformation thereof facilitates the pattern transfer.
摘要翻译：接触式光刻设备，系统和方法使用液压变形来促进图案转印。装置，系统和方法包括提供光刻元件的间隔开的近端取向的间隔件，以及提供液压变形的液压力构件。一个或多个光刻元件和间隔件是可变形的，使得其液压变形有利于图案转印。

100. 发明申请

US20080032233A1 Crossbar-array designs and wire addressing methods that tolerate misalignment of electrical components at wire overlap points 有权
标题翻译：横线阵列设计和线寻址方法，可以容忍电线重叠点处的电气元件的未对准
公开(公告)号：US20080032233A1
公开(公告)日：2008-02-07
申请号：US11906886
申请日：2007-10-03
申请人： Wei Wu , Philip Kuekes , R. Williams
发明人： Wei Wu , Philip Kuekes , R. Williams
IPC分类号： G03C5/00
CPC分类号： G11C13/025 , B82Y10/00 , B82Y30/00 , G11C2213/16 , G11C2213/17 , H01L21/76838 , H01L23/53271 , H01L2221/1094 , H01L2924/0002 , Y10S977/721 , Y10S977/742 , H01L2924/00
摘要： Various embodiments of the present invention are directed to crossbar array designs that interfaces wires to address wires, despite misalignments between electrical components and wires. In one embodiment, a nanoscale device may be composed of a first layer of two or more wires and a second layer of two or more address wires that overlays the first layer. The nanoscale device may also include an intermediate layer positioned between the first layer and the second layer. Two or more redundant electrical component patterns may be fabricated within the intermediate layer so that one or more of the electrical component patterns is aligned with the first and second layers.
摘要翻译：尽管本发明的各种实施例涉及将电线接合到地址线的交叉列阵列设计，尽管电气部件和电线之间未对准。在一个实施例中，纳米级器件可以由两条或更多条线的第一层和覆盖第一层的两条或更多条地址线的第二层组成。纳米级器件还可以包括位于第一层和第二层之间的中间层。可以在中间层内制造两个或更多个冗余电组件图案，使得一个或多个电组件图案与第一层和第二层对准。

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