专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

91. 发明授权

US06583039B2 Method of forming a bump on a copper pad 有权
标题翻译：在铜垫上形成凸点的方法
公开(公告)号：US06583039B2
公开(公告)日：2003-06-24
申请号：US09978422
申请日：2001-10-15
申请人： Yen-Ming Chen , Kuo-Wei Lin , Cheng-Yu Chu , Yang-Tung Fan , Fu-Jier Fan , Shih-Jane Lin , Chiou-Shian Peng , Hsien-Tsung Liu
发明人： Yen-Ming Chen , Kuo-Wei Lin , Cheng-Yu Chu , Yang-Tung Fan , Fu-Jier Fan , Shih-Jane Lin , Chiou-Shian Peng , Hsien-Tsung Liu
IPC分类号： H01L2144
CPC分类号： H01L24/03 , H01L24/05 , H01L24/11 , H01L24/13 , H01L2224/03019 , H01L2224/03912 , H01L2224/0401 , H01L2224/05558 , H01L2224/05572 , H01L2224/1147 , H01L2224/11849 , H01L2224/11912 , H01L2224/13099 , H01L2224/131 , H01L2924/0001 , H01L2924/0002 , H01L2924/01006 , H01L2924/01013 , H01L2924/01019 , H01L2924/01022 , H01L2924/01024 , H01L2924/01027 , H01L2924/01029 , H01L2924/01033 , H01L2924/01042 , H01L2924/0105 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/014 , H01L2924/14 , H01L2924/30105 , H01L2924/30107 , H01L2924/00014 , H01L2224/05552
摘要： A method of forming a bump overlying the copper based contact pad to prevent oxidation of the copper based contact pad. A passivation blanket is deposited over a semiconductor device having a copper based contact pad, the passivation blanket includes a first layer overlying the top surface; a second layer overlying the first layer; a portion of the second layer overlying the copper based contact pad is removed leaving the first layer in place; depositing an under bump metallurgy over the semiconductor device, a portion of the first layer overlying the copper based contact pad is removed so that the copper based contact pad has limited exposure to oxygen; depositing an under bump metallurgy over the semiconductor device; removing excess under bump metallurgy; depositing an electrically conductive material over the under bump metallurgy; reflowing electrically conductive material to form a bump overlying the copper based contact pad.
摘要翻译：一种形成覆盖铜基接触垫的凸起以防止铜基接触垫氧化的方法。钝化覆盖层沉积在具有铜基接触焊盘的半导体器件上，钝化层包括覆盖在顶表面上的第一层; 覆盖第一层的第二层; 去除覆盖铜基接触垫的第二层的一部分，留下第一层就位; 在半导体器件上沉积凸块下的冶金，去除覆盖在铜基接触焊盘上的第一层的一部分，使得铜基接触焊盘具有有限的暴露于氧气; 在所述半导体器件上沉积凸块下的冶金; 去除多余的突起冶金; 在凸块下冶金上沉积导电材料; 回流导电材料以形成覆盖铜基接触垫的凸块。

92. 发明授权

US06472719B1 Method of manufacturing air gap in multilevel interconnection 有权
标题翻译：多层互连制造气隙的方法
公开(公告)号：US06472719B1
公开(公告)日：2002-10-29
申请号：US09624024
申请日：2000-07-24
申请人： Shih-Chi Lin , Yen-Ming Chen , Juin-Jie Chang , Kuei-Wu Huang
发明人： Shih-Chi Lin , Yen-Ming Chen , Juin-Jie Chang , Kuei-Wu Huang
IPC分类号： H01L2900
CPC分类号： H01L23/4821 , H01L21/764 , H01L21/7682 , H01L2924/0002 , H01L2924/00
摘要： A method for forming a semiconductor device having air regions, the method comprises providing a base, forming a pattern of metal leads, depositing a layer of oxide over the metal leads, forming a layer of nitride over said layer of oxide, opening and etching a trench down to the base layer of material, and depositing and planarizing a dielectric layer. An alternate approach teaches the deposition of a layer of SOG over the layer of oxide that has been deposited over the metal leads, planarizing this layer of SOG down to the top of the metal leads, depositing a layer of PECVD oxide, patterning and etching this layer of PECVD oxide thereby creating openings that are in between the metal leads. The SOG that is between the metal leads can be removed thereby creating air gaps as the Intra-level dielectric for the metal leads.
摘要翻译：一种形成具有空气区域的半导体器件的方法，所述方法包括提供基底，形成金属引线图案，在所述金属引线上沉积氧化物层，在所述氧化物层上形成氮化物层，打开和蚀刻沟槽到材料的基层，并沉积和平坦化介电层。一种替代方法教导了在已经沉积在金属引线上的氧化物层上沉积一层SOG，将该层SOG平坦化到金属引线的顶部，沉积一层PECVD氧化物，图案化和蚀刻该 PECVD氧化物层，从而形成位于金属引线之间的开口。可以去除金属引线之间的SOG，从而产生用于金属引线的内部电介质的气隙。

93. 发明授权

US06211057B1 Method for manufacturing arch air gap in multilevel interconnection 有权
标题翻译：多层互连制造拱空气间隙的方法
公开(公告)号：US06211057B1
公开(公告)日：2001-04-03
申请号：US09389887
申请日：1999-09-03
申请人： Shih-Chi Lin , Yen-Ming Chen
发明人： Shih-Chi Lin , Yen-Ming Chen
IPC分类号： H01L214763
CPC分类号： H01L21/76801 , H01L21/31111 , H01L21/7682 , H01L21/76834 , H01L23/5222 , H01L23/5329 , H01L2924/0002 , H01L2924/00
摘要： In accordance with the objectives of the invention a new method of forming air gaps between adjacent conducting lines of a semiconductor circuit is achieved. A pattern of metal lines is deposited over an insulating layer. A layer of oxynitride (SiON) is deposited over the pattern of metal lines and the exposed surface of the insulating layer. PECVD oxide is deposited over the layer of oxynitride; the PECVD oxide is removed down to the top surface of the layer of oxynitride overlying the metal pattern. A layer of SOON is deposited over the surface of the polished oxynitride and the polished PECVD oxide. A trench is etched between the conducting line pattern through the layer of SOON and into the PECVD oxide. The profile of this trench is aggressively expanded converting the trench profile from a rectangular profile into an arch-shaped profile. The top region of the arch-shaped profile is closed off by depositing a layer of dielectric over the surface of the layer of SOON.
摘要翻译：根据本发明的目的，实现了在半导体电路的相邻导线之间形成气隙的新方法。金属线的图案沉积在绝缘层上。在金属线的图案和绝缘层的暴露表面上沉积氮氧化物层（SiON）。 PECVD氧化物沉积在氧氮化物层上; 将PECVD氧化物下移到覆盖金属图案的氮氧化物层的顶表面上。在抛光的氮氧化物和抛光的PECVD氧化物的表面上沉积一层SOON。通过SOON层在导线图案之间蚀刻沟槽并进入PECVD氧化物。该沟槽的轮廓积极地将沟槽轮廓从矩形轮廓转换成拱形轮廓。通过在SOON层的表面上沉积介电层来封闭拱形轮廓的顶部区域。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式