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    • 94. 发明申请
    • Low defect density silicon having a vacancy-dominated core substantially free of oxidation induced stacking faults
    • 具有基本上不含氧化诱导的堆垛层错的空位主导的核的低缺陷密度的硅
    • US20050150445A1
    • 2005-07-14
    • US11005987
    • 2004-12-07
    • Chang KimSteven KimbelJeffrey LibbertMohsen Banan
    • Chang KimSteven KimbelJeffrey LibbertMohsen Banan
    • C30B29/06C30B15/00C30B15/20C30B33/02C30B21/06C30B27/02C30B28/10C30B30/04
    • C30B15/203C30B15/20C30B15/206C30B29/06Y10T428/21
    • The present invention relates to a process for preparing a single crystal silicon ingot, as well as to the ingot or wafer resulting therefrom. The process comprises controlling (i) a growth velocity, v, (ii) an average axial temperature gradient, G0, and (iii) a cooling rate of the crystal from solidification to about 750° C., in order to cause the formation of a segment having a first axially symmetric region extending radially inward from the lateral surface of the ingot wherein silicon self-interstitials are the predominant intrinsic point defect, and a second axially symmetric region extending radially inward from the first and toward the central axis of the ingot. The process is characterized in that v, G0 and the cooling rate are controlled to prevent the formation of agglomerated intrinsic point defects in the first region, while the cooling rate is further controlled to limit the formation of oxidation induced stacking faults in a wafer derived from this segment, upon subjecting the wafer to an oxidation treatment otherwise suitable for the formation of such faults.
    • 本发明涉及一种制备单晶硅锭的方法,以及由此产生的锭或晶片。 该方法包括控制(i)生长速度v,(ii)平均轴向温度梯度G 0 O 3,和(iii)晶体从凝固到约750℃的冷却速率。 ,以便形成具有第一轴向对称区域的区段,该第一轴向对称区域从该晶锭的侧表面径向向内延伸,其中硅自间隙是主要的固有点缺陷,以及第二轴向对称区域,其从第一 并朝向锭的中心轴线。 该方法的特征在于控制v,G 0和冷却速率以防止在第一区域中形成凝聚的固有点缺陷,同时进一步控制冷却速率以限制氧化物的形成 在对晶片进行氧化处理(其他适用于形成这样的故障的氧化处理)之后,在来自该段的晶片中引起堆垛层错。