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    • 7. 发明授权
    • Semiconductor light-emitting device and method for manufacturing thereof
    • 半导体发光装置及其制造方法
    • US08519412B2
    • 2013-08-27
    • US12837274
    • 2010-07-15
    • Su Hyoung SonKyoung Jin KimEun Mi KoUng Lee
    • Su Hyoung SonKyoung Jin KimEun Mi KoUng Lee
    • H01L33/00
    • H01L33/22H01L33/007
    • A semiconductor light-emitting device and a method for manufacturing the same is disclosed, which improves light extraction efficiency by forming a plurality of protrusions on a surface of a substrate for growing a nitride semiconductor material thereon, the semiconductor light-emitting device comprising a substrate; one or more first protrusions on the substrate, each first protrusion having a recess through which a surface of the substrate is exposed planarly; a first semiconductor layer on the substrate including the first protrusions; an active layer on the first semiconductor layer; a second semiconductor layer on the active layer; a first electrode on a predetermined portion of the first semiconductor layer, wherein the active layer and second semiconductor layer are not formed on the predetermined portion of the first semiconductor layer; and a second electrode on the second semiconductor layer.
    • 公开了一种半导体发光器件及其制造方法,其通过在用于在其上生长氮化物半导体材料的衬底的表面上形成多个突起而提高光提取效率,该半导体发光器件包括衬底 ; 一个或多个第一突起在基板上,每个第一突起具有凹槽,基板的表面通过该凹槽平面地露出; 在所述基板上的包括所述第一突起的第一半导体层; 在第一半导体层上的有源层; 有源层上的第二半导体层; 在所述第一半导体层的预定部分上的第一电极,其中所述有源层和所述第二半导体层不形成在所述第一半导体层的预定部分上; 和在第二半导体层上的第二电极。