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    • 92. 发明申请
    • SPIN TREATMENT APPARATUS
    • 旋转治疗装置
    • US20150059642A1
    • 2015-03-05
    • US14472923
    • 2014-08-29
    • SHIBAURA MECHATRONICS CORPORATION
    • Masaaki FURUYA
    • B05B3/08B05B15/04
    • H01L21/67028G03F7/162G03F7/3021H01L21/67051H01L21/6715H01L21/68785
    • A spin treatment apparatus according to an embodiment includes: an annular liquid receiver surrounding a rotating substrate at a distance from an outer periphery of the substrate and configured to receive liquid flying from the rotating substrate and accommodate the liquid; an annular cup body surrounding the liquid receiver at a distance from an outer periphery of the liquid receiver and forming an annular outer exhaust flow channel for generating an airflow along an upper surface to an outer peripheral surface of the liquid receiver; and an annular partitioning member provided inside the annular liquid receiver and forming an annular inner exhaust flow channel for generating an airflow along an inner peripheral surface to a lower surface of the liquid receiver.
    • 根据实施例的旋转处理装置包括:围绕旋转基板的环形液体接收器,与基板的外周距离一定距离,并且构造成接收从旋转基板飞出并容纳液体的液体; 围绕所述液体接收器的环形杯体,所述环形杯体与所述液体接收器的外周距离一定距离,并且形成用于沿着所述液体接收器的外表面的上表面产生气流的环形外排气流动通道; 以及环形分隔构件,其设置在所述环形液体接收器内部并形成环形内部排气流动通道,用于沿着所述液体接收器的内周表面到下表面产生气流。
    • 94. 发明申请
    • PLASMA PROCESSING APPARATUS AND PLASMA PROCESSING METHOD
    • 等离子体加工设备和等离子体处理方法
    • US20130256270A1
    • 2013-10-03
    • US13847130
    • 2013-03-19
    • SHIBAURA MECHATRONICS CORPORATIONKABUSHIKI KAISHA TOSHIBA
    • Takeharu MOTOKAWATokuhisa OOIWAKensuke DEMURATomoaki YOSHIMORIMakoto KARYUYoshihisa KASEHidehito AZUMANO
    • H05H1/46
    • H05H1/46H01J37/32623H01J37/32715H01J37/32724
    • According to one embodiment, a plasma processing apparatus includes: a processing chamber; a decompression section configured to decompress inside of the processing chamber; a member including a control section to be inserted into a depression provided on mounting side of a workpiece, the control section being configured to thereby control at least one of in-plane distribution of capacitance of a region including the workpiece and in-plane distribution of temperature of the workpiece; a mounting section provided inside the processing chamber; a plasma generating section configured to supply electromagnetic energy to a region for generating a plasma for performing plasma processing on the workpiece; and a gas supply section configured to supply a process gas to the region for generating a plasma. The control section performs control so that at least one of the in-plane distribution of capacitance and the in-plane distribution of temperature is made uniform.
    • 根据一个实施例,等离子体处理装置包括:处理室; 减压部,其构造成在所述处理室内减压; 包括插入到设置在工件的安装侧的凹部中的控制部的构件,所述控制部被构造成能够控制包括所述工件的区域的电容的面内分布和面内分布中的至少一个 工件温度; 设置在处理室内部的安装部; 等离子体产生部,被配置为向用于产生用于对所述工件进行等离子体处理的等离子体的区域提供电磁能; 以及气体供给部,其构造成将处理气体供给到用于产生等离子体的区域。 控制部进行控制,使得电容的平面内分布和温度的面内分布中的至少一个均匀。
    • 95. 发明申请
    • PROCESSING SYSTEM AND PROCESSING METHOD
    • 处理系统和处理方法
    • US20130209212A1
    • 2013-08-15
    • US13570440
    • 2012-08-09
    • Masaaki FuruyaToyoyasu Tauchi
    • Masaaki FuruyaToyoyasu Tauchi
    • B65G57/00
    • B65G57/00H01L21/67742H01L21/67781
    • According to one embodiment, a processing system includes a storage section, a processing section, a mounting section, a first transport section, and a second transport section. The mounting section includes a plurality of holding sections with a first spacing in a stacking direction. The first transport section is configured to transport the workpiece between the storage section and the mounting section and to enter the mounting section at a first position in the stacking direction. The second transport section is configured to transport the workpiece between the processing section and the mounting section and to enter the mounting section at a second position different from the first position in the stacking direction. The first position is provided at two sites in the stacking direction across the second position. The first transport section and the second transport section are enabled to enter the mounting section around a same time.
    • 根据一个实施例,处理系统包括存储部分,处理部分,安装部分,第一传送部分和第二传送部分。 安装部包括在层叠方向上具有第一间隔的多个保持部。 第一输送部构造成在存储部和安装部之间输送工件,并且在堆叠方向的第一位置进入安装部。 第二输送部构造成在处理部和安装部之间输送工件,并且在与层叠方向上的第一位置不同的第二位置进入安装部。 第一位置在跨越第二位置的层叠方向上的两个位置设置。 第一输送部和第二输送部能够同时进入安装部。
    • 96. 发明申请
    • PLASMA ETCHING APPARATUS AND PLASMA ETCHING METHOD
    • 等离子体蚀刻装置和等离子体蚀刻方法
    • US20120132617A1
    • 2012-05-31
    • US13389181
    • 2010-08-05
    • Daisuke MATSUSHIMA
    • Daisuke MATSUSHIMA
    • H01L21/3065
    • H01J37/32357H01J37/32192H01J37/32935H01J37/32963H01J37/32972H01L22/26
    • A plasma etching apparatus includes a processing container, a depressurization unit, a placement unit, a discharge tube, an introduction waveguide tube, a gas supply unit, a transport tube, a detection window, a coherent light detection unit, and a control unit. The control unit is configured to detect an end point of etching based on an output from the coherent light detection unit. The control unit is configured to use an output from the light receiving devices of a detection region of the coherent light detection unit to extract an output of the light receiving device of a portion of the detection region corresponding to an etching portion to detect the end point of the etching based on an intensity of the coherent light determined from the output of the light receiving device of the portion of the detection region corresponding to the etching portion.
    • 等离子体蚀刻装置包括处理容器,减压单元,放置单元,放电管,导入波导管,气体供给单元,输送管,检测窗,相干光检测单元和控制单元。 控制单元被配置为基于来自相干光检测单元的输出来检测蚀刻的终点。 控制单元被配置为使用来自相干光检测单元的检测区域的光接收装置的输出来提取与蚀刻部分对应的检测区域的一部分的光接收装置的输出,以检测终点 基于从与蚀刻部分对应的检测区域的部分的光接收装置的输出确定的相干光的强度的蚀刻。
    • 99. 发明授权
    • Wafer containing cassette inspection device and method
    • 晶圆盒检测装置及方法
    • US08094923B2
    • 2012-01-10
    • US12517145
    • 2007-12-04
    • Yoshinori HayashiHideki MoriTakeki Kogawa
    • Yoshinori HayashiHideki MoriTakeki Kogawa
    • G06K9/00
    • G06T7/001G06T2207/30108
    • A wafer containing cassette inspection device that expresses external view attributes such as shapes of respective inspection object portions of water containing cassettes of different types under the same condition without changing imaging conditions for each of the types. A wafer containing cassette inspection device includes an imaging device and a processing unit which processes an image signal from the imaging device. The processing unit includes: reference image generation means; image-to-be-inspected information generation means which generates image-to-be-inspected information; image correction means which performs a process for obtaining a predetermined image from the reference image information on the image-to-be inspected information; and means which generates external view attribute information expressing external view attributes of the inspection object portions according to the corrected image information.
    • 一种晶片容纳盒检查装置,其在相同条件下表示外部视图属性,例如不同类型的盒的水的各个检查对象部分的形状,而不改变每种类型的成像条件。 含晶片盒检查装置包括成像装置和处理单元,其处理来自成像装置的图像信号。 处理单元包括:参考图像生成装置; 图像被检查信息生成装置,其生成图像被检查信息; 图像校正装置,用于从参考图像信息执行用于获得预定图像的处理以获得被检查图像信息; 以及根据校正图像信息生成表示检查对象部分的外部视图属性的外部视图属性信息的装置。