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1. 发明授权

US12050398B2 Semiconductor device and method of forming the same 有权
公开(公告)号：US12050398B2
公开(公告)日：2024-07-30
申请号：US16878508
申请日：2020-05-19
申请人： MICRON TECHNOLOGY, INC.
发明人： Hidenori Yamaguchi , Keizo Kawakita , Shigeru Sugioka
IPC分类号： G03F1/56 , H01L21/027 , H01L23/31
CPC分类号： G03F1/56 , H01L21/0273 , H01L23/3171 , H01L23/3178 , H01L23/3192 , H01L2224/0215 , H01L2224/05569
摘要： A semiconductor device includes a semiconductor substrate having a semiconductor substrate having a main surface including a first portion; a redistribution layer provided over the first portion of the main surface of the semiconductor substrate; an insulating layer covering the first portion of the main surface of the semiconductor substrate and the redistribution layer; and a first polyimide film covering the insulating layer; wherein the polyimide film has a substantially flat upper surface.

2. 发明公开

US20240192602A1 APPARATUS FOR TREATING SUBSTRATE AND METHOD FOR TREATING A SUBSTRATE 审中-公开
公开(公告)号：US20240192602A1
公开(公告)日：2024-06-13
申请号：US18333185
申请日：2023-06-12
申请人： SEMES CO., LTD.
发明人： Min Jung PARK , Soo Bin YONG , Jae Hoon PARK
IPC分类号： G03F7/16 , G03F1/56 , H01L21/02 , H01L21/47 , H01L21/67
CPC分类号： G03F7/162 , G03F1/56 , H01L21/02282 , H01L21/47 , H01L21/67034
摘要： The inventive concept provides a substrate treating method. The substrate treating apparatus includes first treating including supplying a first liquid to a rotating substrate; and second treating including supplying a second liquid to the rotating substrate after the supplying of the first liquid, and wherein a rotation speed of a substrate is changed during the supplying of the first liquid to the rotating substrate.

3. 发明授权

US10969677B2 Film mask, method for manufacturing same, and method for forming pattern using film mask 有权
公开(公告)号：US10969677B2
公开(公告)日：2021-04-06
申请号：US15776042
申请日：2017-01-31
申请人： LG CHEM, LTD.
发明人： Ji Young Hwang , Han Min Seo , Nam Seok Bae , Seung Heon Lee , Dong Hyun Oh , Chan Hyoung Park , Ki-Hwan Kim , Ilha Lee
IPC分类号： G03F1/54 , G03F1/38 , G03F1/48 , G03F1/56 , G03F1/50 , G03F7/20 , H01L21/033
摘要： The present application relates to a film mask including: a transparent substrate; a darkened light-shielding pattern layer provided on the transparent substrate; and a release force enhancement layer provided on the darkened light-shielding pattern layer and having surface energy of 30 dynes/cm or less, a method for manufacturing the same, and a method for forming a pattern using the film mask.

4. 发明授权

US09625813B2 Chemical amplification resist composition, resist film using the composition, resist-coated mask blanks, resist pattern forming method, photomask and polymer compound 有权
公开(公告)号：US09625813B2
公开(公告)日：2017-04-18
申请号：US13943062
申请日：2013-07-16
申请人： FUJIFILM Corporation
发明人： Tomotaka Tsuchimura , Tadateru Yatsuo
IPC分类号： G03F7/004 , G03F7/38 , C08F257/00 , G03F1/20 , G03F7/038 , C08F12/24 , C08F212/14 , C09D125/18 , C08K5/19 , G03F1/22 , G03F7/20 , G03F7/039 , G03F1/56 , G03F1/76
CPC分类号： G03F7/0382 , C08F12/24 , C08F212/14 , C08F257/00 , C08K5/19 , C09D125/18 , G03F1/20 , G03F1/22 , G03F1/56 , G03F1/76 , G03F7/0397 , G03F7/20 , G03F7/2037 , G03F7/2039 , C08F212/32 , C08L25/18 , C08F2220/185 , C08F220/42
摘要： A chemical amplification resist composition contains: (A) a polymer compound having a structure where a hydrogen atom of a phenolic hydroxyl group is replaced by a group having a non-acid-decomposable polycyclic alicyclic hydrocarbon structure; and (B) a compound capable of generating an acid upon irradiation with an actinic ray or radiation.

5. 发明授权

US09613812B2 Method for processing a carrier, a carrier, an electronic device and a lithographic mask 有权
公开(公告)号：US09613812B2
公开(公告)日：2017-04-04
申请号：US14693900
申请日：2015-04-23
申请人： Infineon Technologies AG
发明人： Jens Schneider , Henning Feick , Marcel Heller , Dieter Kaiser
IPC分类号： H01L21/266 , G03F1/00 , G03F7/20 , H01L29/36 , G01L1/22 , H01L21/027 , H01L21/265 , H01L43/06 , H01L43/14 , H01L29/78 , H01L29/08 , H01L27/02 , G03F1/38 , C23C14/04 , C23C14/48 , H01L29/861 , G03F1/56
CPC分类号： H01L21/266 , C23C14/042 , C23C14/48 , G01L1/2293 , G03F1/00 , G03F1/38 , G03F1/56 , G03F7/70058 , H01L21/0271 , H01L21/2652 , H01L21/26586 , H01L27/0255 , H01L29/0847 , H01L29/36 , H01L29/7835 , H01L29/8611 , H01L43/065 , H01L43/14 , Y10T428/24802
摘要： Various embodiments provide a method for processing a carrier, the method including changing the three-dimensional structure of a mask layer arranged over the carrier so that at least two mask layer regions are formed having different mask layer thicknesses; and applying an ion implantation process to the at least two mask layer regions to form at least two implanted regions in the carrier having different implantation depth profiles.

6. 发明授权

US06979525B2 Method of manufacturing electronic device 有权
标题翻译：制造电子装置的方法
公开(公告)号：US06979525B2
公开(公告)日：2005-12-27
申请号：US10319651
申请日：2002-12-16
申请人： Toshihiko Tanaka , Takashi Tattori
发明人： Toshihiko Tanaka , Takashi Tattori
IPC分类号： G03F1/32 , G03F1/36 , G03F1/54 , G03F1/56 , G03F1/68 , G03F1/70 , H01L21/027 , G03F7/20
CPC分类号： G03F1/32 , G03F1/56
摘要： A method of manufacturing an electronic device that includes the step of forming a pattern on a substrate by using a halftone phase shift mask where the halftone phase shift mask includes a translucent phase shift pattern having an aperture; and an auxiliary pattern, disposed near the aperture and having as a principal component an organic film which possesses a light attenuating property or a light shielding property against exposure light. The halftone phase shift mask fabricating Turn-Around-Time (TAT) is shortened thereby shortening the development time required for an electronic device, the production cost of which has also been reduced.
摘要翻译：一种制造电子器件的方法，包括通过使用半色调相移掩模在衬底上形成图案的步骤，其中半色调相移掩模包括具有孔径的半透明相移图案; 以及辅助图案，其设置在孔的附近，并且具有作为主要成分的具有抗曝光光的光衰减性或遮光性的有机膜。缩短制造周转时间（TAT）的半色调相移掩模，从而缩短了电子设备所需的开发时间，其生产成本也降低了。

7. 发明授权

US06958292B2 Method of manufacturing integrated circuit 有权
标题翻译：集成电路制造方法
公开(公告)号：US06958292B2
公开(公告)日：2005-10-25
申请号：US10364707
申请日：2003-02-12
申请人： Norio Hasegawa , Joji Okada , Toshihiko Tanaka , Kazutaka Mori , Ko Miyazaki
发明人： Norio Hasegawa , Joji Okada , Toshihiko Tanaka , Kazutaka Mori , Ko Miyazaki
IPC分类号： G03F1/54 , G03F1/56 , G03F1/62 , G03F1/68 , G03F1/70 , G03F7/00 , G03F7/20 , H01L21/027 , H01L21/44
CPC分类号： G03F1/56 , G03F1/70 , G03F7/0035 , G03F7/70433 , G03F7/707 , H01L21/0274 , Y10S438/942 , Y10S438/945 , Y10S438/948 , Y10S438/95
摘要： In order to shorten the period for the development and manufacture of a semiconductor integrated circuit device, at the time of transferring integrated circuit patterns onto a wafer by an exposure process, a photomask PM1 is used which is provided partially with light shielding patterns 3a formed of a resist film, in addition to light shielding patterns formed of a metal.
摘要翻译：为了缩短开发和制造半导体集成电路器件的周期，在通过曝光处理将集成电路图案转印到晶片上时，使用部分地设置有遮光图案3a的光掩模PM 1 由抗蚀剂膜形成，除了由金属形成的遮光图案之外。

8. 发明授权

US5674661A Image dye for laser dye removal recording element 失效
标题翻译：用于激光染料去除记录元件的图像染料
公开(公告)号：US5674661A
公开(公告)日：1997-10-07
申请号：US564834
申请日：1995-11-29
申请人： Stephen Michael Neumann
发明人： Stephen Michael Neumann
IPC分类号： B41M5/26 , B41M5/24 , B41M5/385 , B41M5/388 , B41M5/39 , G03F1/56 , G03C5/16
CPC分类号： G03F1/56 , B41M5/24 , B41M5/3854 , B41M5/3858 , B41M5/388 , Y10S430/146
摘要： A laser dye removal recording element comprising a support having thereon a dye layer comprising an image dye dispersed in a polymeric binder, the dye layer having an infrared-absorbing material associated therewith, and wherein the image dye comprises a cyan disazo dye having the following formula: ##STR1## wherein: R.sup.1, R.sup.3, and R.sup.4 each independently represents nitro, hydroxy, alkyl, aryl, fused aryl, fused heteroaryl, carboxy, alkylcarbonyl, arylcarbonyl, hydrogen, alkenyl, cycloalkyl, haloalkyl, cyanoalkyl, hydroxyalkyl, alkoxy, alkoxyalkyl, aryloxyalkyl, alkoxyalkylcarbonyl, aryloxyalkylcarbonyl, alkoxyalkoxyalkyl, hydroxyalkyl, hydroxyalkoxyalkyl, hydroxyalkoxyalkylamino, alkenyloxyalkyl, alkoxycarbonyloxyalkyl, alkenylcarbonyl, aryloxyalkylcarbonyl, aminoalkyl, cyanoalkylcarbonyl, haloalkylcarbonyl, alkylamino, arylamino, amino, halogen, sulfonamido or arylazo; or R.sup.3 and R.sup.4 can be joined together at the 4- and 5- positions of the ring to form a diaminoalkylene group; R.sup.2 represents hydroxy, hydrogen, alkyl or aryl; m is an integer of from 1 to 5; n is an integer of from 1 to 3; and x is an integer of from 1 to 4.
摘要翻译：一种激光染料去除记录元件，包括其上具有染料层的载体，所述染料层包含分散在聚合物粘合剂中的图像染料，所述染料层具有与其相关的红外线吸收材料，并且其中所述图像染料包含具有下式的青色双偶氮染料：烷基，芳基，稠合芳基，稠合杂芳基，羧基，烷基羰基，芳基羰基，氢，烯基，环烷基，卤代烷基，氰基烷基，羟基烷基，烷氧基，烷氧基烷基，芳氧基烷基，烷氧基烷基羰基，芳氧基烷基羰基，烷氧基烷氧基烷基，羟基烷基，羟基烷氧基烷基，羟基烷氧基烷基氨基，烯氧基烷基，烷氧基羰基氧基烷基，烯基羰基，芳氧基烷基羰基，氨基烷基，氰基烷基羰基，卤代烷基羰基，烷基氨基，芳基氨基，氨基，卤素，亚磺酰氨基或芳基偶氮; 或者R 3和R 4可以在环的4-和5-位连接在一起形成二氨基亚烷基; R2代表羟基，氢，烷基或芳基; m为1〜5的整数， n为1〜3的整数， x为1〜4的整数。

9. 发明授权

US4948706A Process for producing transparent substrate having thereon transparent conductive pattern elements separated by light-shielding insulating film, and process for producing surface-colored material 失效
标题翻译：用于制造透明基板的方法，其上具有由遮光绝缘膜分隔开的透明导电图案元件，以及用于制备表面着色材料的工艺
公开(公告)号：US4948706A
公开(公告)日：1990-08-14
申请号：US291151
申请日：1988-12-28
申请人： Osamu Sugihara , Hiroshi Masuda , Shogo Tsukazaki , Tameyuki Suzuki , Junichi Yasukawa , Toshiaki Ohta , Toshio Mitsuhara
发明人： Osamu Sugihara , Hiroshi Masuda , Shogo Tsukazaki , Tameyuki Suzuki , Junichi Yasukawa , Toshiaki Ohta , Toshio Mitsuhara
IPC分类号： G02F1/1335 , G03F1/56 , G03F7/00 , H01L31/0216 , H01L31/0224
CPC分类号： G03F1/56 , G02F1/133512 , G03F7/0007 , H01L31/02162 , H01L31/02164 , H01L31/022466 , G02F1/133516 , Y10S359/90
摘要： The present invention relates to a process for producing a transparent substrate having thereon transparent conductive pattern elements separated by a light-shielding insulating film, as well as to a process for producing a surface-colored material by utilizing said process.
摘要翻译：本发明涉及一种透明基板的制造方法，该透明基板具有由遮光绝缘膜隔开的透明导电图案元件，以及利用该工艺制造表面着色材料的方法。

10. 发明授权

US4704342A Photomask having a patterned carbon light-blocking coating 失效
标题翻译：具有图案化的碳阻挡涂层的光掩模
公开(公告)号：US4704342A
公开(公告)日：1987-11-03
申请号：US719020
申请日：1985-04-02
申请人： William I. Lehrer , P. Anthony Crossley
发明人： William I. Lehrer , P. Anthony Crossley
IPC分类号： G03F1/54 , G03F1/56 , G03F9/00
CPC分类号： G03F1/56 , G03F1/54 , Y10S430/146
摘要： A photomask for use in manufacturing integrated circuits is fabricated by coating a thin film of organic material, generally a solution of a thermally decomposable hydrocarbon, onto a glass plate and heating it in a reducing atmosphere to convert it into carbon. The carbon layer is masked and etched; for example, in an oxygen plasma, to produce the mask.
摘要翻译：用于制造集成电路的光掩模通过将有机材料薄膜（通常为可热分解的烃的溶液）涂覆在玻璃板上并在还原气氛中加热以将其转化为碳来制造集成电路。对碳层进行掩模蚀刻; 例如在氧等离子体中制造掩模。

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