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1. 发明授权

US4133701A Selective enhancement of phosphorus diffusion by implanting halogen ions 失效
标题翻译：通过植入卤素离子来选择性增强磷的扩散
公开(公告)号：US4133701A
公开(公告)日：1979-01-09
申请号：US810929
申请日：1977-06-29
申请人： Eugene Greenstein , Bernard A. MacIver
发明人： Eugene Greenstein , Bernard A. MacIver
IPC分类号： H01L21/225 , H01L21/265 , H01L29/167 , H01L21/263 , H01L27/02
CPC分类号： H01L21/26506 , H01L21/2252 , H01L29/167 , Y10S148/128
摘要： An improved method of making bipolar monolithic integrated circuits by successive diffusions of boron and phosphorus. Selective halogen ion implantation is used to locally specifically enhance phosphorus diffusion. The halogen implant is performed prior to the boron diffusion. Enhanced local phosphorus diffusion provides selected transistors in the circuit with a narrower base width than others, and a corresponding higher current gain than others. Analogously, higher value pinch resistors can be selectively produced in the circuit.
摘要翻译：通过硼和磷的连续扩散制造双极单片集成电路的改进方法。选择性卤素离子注入用于局部特异性增强磷扩散。在硼扩散之前进行卤素注入。增强的局部磷扩散在电路中提供选择的晶体管，其基极宽度比其他晶体窄，并且相应的电流增益比其它晶体管高。类似地，可以在电路中选择性地产生更高价值的钳式电阻器。

2. 发明授权

US3756862A Proton enhanced diffusion methods 失效
标题翻译：原子增强扩散方法
公开(公告)号：US3756862A
公开(公告)日：1973-09-04
申请号：US3756862D
申请日：1971-12-21
申请人： IBM
发明人： AHN J , DE WITT D , JOHNSON W , KLEINFELDER W
IPC分类号： H01L23/52 , H01J37/317 , H01L21/265 , H01L21/3205 , H01L21/331 , H01L21/76 , H01L21/761 , H01L21/8228 , H01L27/00 , H01L27/06 , H01L29/73 , H01L7/54
CPC分类号： H01L27/0658 , H01J37/3171 , H01L21/265 , H01L21/26506 , H01L21/761 , H01L21/82285 , H01L27/00 , Y10S148/037 , Y10S148/085 , Y10S148/128 , Y10S148/145 , Y10S438/912
摘要： IMPROVED SEMICONDUCTOR DEVICES ARE MADE BY THE METHOD OF PROTON ENHANCED DIFFUSION. A SEMICONDUCTOR WAFER HAVING A BURIED SUBCOLLECTOR REGION, IS RAISED TO AN ELEVATED TEMPERATURE AND EXPOSED TO AN ACCELERATED BEAM OF HYDROGEN OR HELIUM IONS WHICH MAY EITHER BE FOCUSED OR BE DIRECTED THROUGH A MASK. THE BEAM IS RENDERED INCIDENT ON THE SUBCOLLECTOR REGION. THE IONS PENETRATING THE SUBCOLLECTOR REGION ENHANCE THE DIFFUSION OF SUBCOLLECTOR TYPE IMPURITIES PRODUCING A COLLECTOR PEDESTAL AND A COLLECTOR REACH-THROUGH FOR A PEDESTAL TRANSISTOR. THE TRANSISTOR PRODUCED THEREBY HAS A UNIFORMLY NARROW BASE WIDTH HAVING A RELATIVELY LONG MINORITYU CARRIER LIFETIME AND VERY STEEP IMPURITY PROFILES. AN IMPROVED DIFFUSION CAPACITOR, IGFET, AND SUBSURFACE DIFFUSES INTERCONNECTION IS ALSO MADE BY THE METHOD OF PROTON ENHANCED DIFFUSION.

3. 发明授权

US5358877A Soft proton isolation process for an acoustic charge transport integrated circuit 失效
标题翻译：用于声电荷传输集成电路的软质子隔离工艺
公开(公告)号：US5358877A
公开(公告)日：1994-10-25
申请号：US676965
申请日：1991-03-29
申请人： Michael J. Hoskins , Martin J. Brophy
发明人： Michael J. Hoskins , Martin J. Brophy
IPC分类号： G11C5/00 , H01L21/76 , H03H9/02 , H01L21/265
CPC分类号： H03H9/02976 , G11C5/005 , H01L21/7605 , Y10S148/084 , Y10S148/128
摘要： A method for electrically isolating an integrated circuit element in an acoustic charge transport device comprises the steps of providing a semi-insulating substrate; providing an epitaxial layer with a thickness and carrier concentration appropriate for an ACT device; providing a circuit element semiconductor layer in the epitaxial layer for construction of an integrated circuit element, the layer having a thickness substantially less than the thickness of the epitaxial layer and having a carrier concentration substantially greater than the ACT epitaxial layer; laterally isolating the semiconductor layer from other regions of the ACT epitaxial layer; and bombarding the semiconductor layer with protons at a dose sufficient to provide significant vertical electrical isolation from underlying regions of the epitaxial layer semi-insulating with minimal detrimental effect on the electrical characteristics of the semiconductor layer.
摘要翻译：一种用于电隔离声电荷输送装置中的集成电路元件的方法包括以下步骤：提供半绝缘衬底; 提供具有适合于ACT器件的厚度和载流子浓度的外延层; 在用于构建集成电路元件的外延层中提供电路元件半导体层，该层具有基本上小于外延层的厚度并具有基本上大于ACT外延层的载流子浓度的厚度; 将半导体层与ACT外延层的其它区域横向隔离; 并以足够的剂量用质子轰击半导体层，以便对半导体层的电特性具有最小的不利影响，从而提供与半绝缘的下层区域的显着的垂直电隔离。

4. 发明授权

US5304509A Back-side hydrogenation technique for defect passivation in silicon solar cells 失效
标题翻译：硅太阳能电池缺陷钝化的背面加氢技术
公开(公告)号：US5304509A
公开(公告)日：1994-04-19
申请号：US934025
申请日：1992-08-24
申请人： Bhushan L. Sopori
发明人： Bhushan L. Sopori
IPC分类号： H01L21/30 , H01L31/18 , H01L21/26
CPC分类号： H01L21/3003 , H01L31/1868 , Y02E10/50 , Y02P70/521 , Y10S136/29 , Y10S148/125 , Y10S148/128 , Y10S148/153
摘要： A two-step back-side hydrogenation process includes the steps of first bombarding the back side of the silicon substrate with hydrogen ions with intensities and for a time sufficient to implant enough hydrogen atoms into the silicon substrate to potentially passivate substantially all of the defects and impurities in the silicon substrate, and then illuminating the silicon substrate with electromagnetic radiation to activate the implanted hydrogen, so that it can passivate the defects and impurities in the substrate. The illumination step also annihilates the hydrogen-induced defects. The illumination step is carried out according to a two-stage illumination schedule, the first or low-power stage of which subjects the substrate to electromagnetic radiation that has sufficient intensity to activate the implanted hydrogen, yet not drive the hydrogen from the substrate. The second or high-power illumination stage subjects the substrate to higher intensity electromagnetic radiation, which is sufficient to annihilate the hydrogen-induced defects and sinter/alloy the metal contacts.
摘要翻译：两步背面氢化方法包括以下步骤：首先用具有强度的氢离子轰击硅衬底的背面，并且足以将足够的氢原子注入到硅衬底中以潜在地钝化所有缺陷，硅衬底中的杂质，然后用电磁辐射照射硅衬底以激活注入的氢，使得其可以钝化衬底中的缺陷和杂质。照明步骤还消除了氢诱发的缺陷。照明步骤根据两阶段照明时间表执行，其第一或低功率阶段使基板对具有足够强度的电磁辐射进行激活，以激活注入的氢，但不从基板驱动氢。第二或大功率照明阶段使基板受到较高强度的电磁辐射，这足以消除氢诱导的缺陷并烧结/合金金属触点。

5. 发明授权

US4584028A Neutralization of acceptor levels in silicon by atomic hydrogen 失效
标题翻译：通过原子氢中和硅中的受体水平
公开(公告)号：US4584028A
公开(公告)日：1986-04-22
申请号：US653559
申请日：1984-09-24
申请人： Jacques I. Pankove , David E. Carlson
发明人： Jacques I. Pankove , David E. Carlson
IPC分类号： H01L21/30
CPC分类号： H01L21/3003 , Y10S148/128
摘要： A p-type impurity in a silicon semiconductor structure is at least partially neutralized by exposure to atomic hydrogen. The subject method provides an excellent means of modifying the profile of the impurity. Suitable impurities include boron, aluminum, gallium and indium.
摘要翻译：硅半导体结构中的p型杂质通过暴露于原子氢中至少部分被中和。本发明方法提供了改变杂质轮廓的极好方法。合适的杂质包括硼，铝，镓和铟。

6. 发明授权

US4447905A Current confinement in semiconductor light emitting devices 失效
标题翻译：电流限制在半导体发光器件中
公开(公告)号：US4447905A
公开(公告)日：1984-05-08
申请号：US247523
申请日：1981-03-25
申请人： Richard W. Dixon , Louis A. Koszi , Richard C. Miller , Bertram Schwartz
发明人： Richard W. Dixon , Louis A. Koszi , Richard C. Miller , Bertram Schwartz
IPC分类号： H01L33/00 , H01L33/24 , H01S5/00 , H01S5/20 , H01S5/22 , H01S3/19
CPC分类号： H01L33/24 , H01L33/0025 , H01S5/20 , H01S5/2202 , H01S5/2059 , Y10S148/084 , Y10S148/128
摘要： Semiconductor light emitting devices, lasers and LEDs, are described in which the current flow channel is narrower near the top surface of the device and wider at its bottom near the active region. Also, described are several attenuation masks for fabricating the channels of these devices by particle bombardment.
摘要翻译：描述了半导体发光器件，激光器和LED，其中电流流动通道在器件的顶表面附近更窄，并且在其底部靠近有源区域较宽。此外，还描述了通过粒子轰击来制造这些器件的通道的几个衰减掩模。

7. 发明授权

US4376657A Method of making fault-free surface zone in semiconductor devices by step-wise heat treating 失效
标题翻译：通过逐步热处理在半导体器件中制造无故障表面区域的方法
公开(公告)号：US4376657A
公开(公告)日：1983-03-15
申请号：US213400
申请日：1980-12-05
申请人： Kazutoshi Nagasawa , Seigo Kishino , Yoshiaki Matsushita , Masaru Kanamori
发明人： Kazutoshi Nagasawa , Seigo Kishino , Yoshiaki Matsushita , Masaru Kanamori
IPC分类号： H01L21/322 , H01L7/52 , H01L21/263
CPC分类号： H01L21/3225 , Y10S148/128
摘要： In a gettering method for processing semiconductor wafers a semiconductor wafer such as a silicon wafer is first annealed in a non-oxidizing atmosphere, for example, in a nitrogen atmosphere, at a temperature in the range of 950.degree. to 1,300.degree. C., preferably at 1,050.degree. C., for more than 10 minutes, for example for four (4) hours, to diffuse out oxygen near the surfaces of the semiconductor wafer. Then the semiconductor wafer is annealed at a temperature in the range of 600.degree. to 800.degree. C., for example at 650.degree. C., for more than one hour, preferably for 16 hours, to create in the interior of the semiconductor wafer microdefects of high density.
摘要翻译：在用于处理半导体晶片的吸气方法中，首先在非氧化性气氛中，例如在氮气气氛中，在950〜1300℃的温度范围内退火诸如硅晶片的半导体晶片，优选地在1050℃下超过10分钟，例如四（4）小时，以在半导体晶片的表面附近扩散出氧。然后将半导体晶片在600℃至800℃的温度范围内，例如在650℃下退火超过1小时，优选16小时，以在半导体晶片的内部形成微缺陷的高密度。

8. 发明授权

US4151007A Hydrogen annealing process for stabilizing metal-oxide-semiconductor structures 失效
标题翻译：用于稳定金属氧化物半导体结构的氢退火工艺
公开(公告)号：US4151007A
公开(公告)日：1979-04-24
申请号：US840620
申请日：1977-10-11
申请人： Hyman J. Levinstein , Ashok K. Sinha
发明人： Hyman J. Levinstein , Ashok K. Sinha
IPC分类号： H01L21/30 , H01L21/3105 , H01L21/321
CPC分类号： H01L21/321 , H01L21/3003 , H01L21/3105 , Y10S148/003 , Y10S148/024 , Y10S148/053 , Y10S148/128
摘要： Variations in threshold voltage of Metal-Oxide-Silicon (MOS) structures are attenuated by the inclusion in the fabrication process of a hydrogen anneal step using a temperature range of 650 degrees C.ltoreq.T.ltoreq.950 degrees C. This anneal step is designed to be the last step in the fabrication process which is performed at temperatures above 600 degrees C.
摘要翻译：金属氧化物 - 硅（MOS）结构的阈值电压的变化通过在650℃的温度范围内的氢退火步骤的制造过程中包含而被减弱。该退火步骤被设计为在600摄氏度以上的温度下进行的制造工艺的最后一步。

9. 发明授权

US06835992B1 Closely-spaced VCSEL and photodetector for applications requiring their independent operation 失效
标题翻译：紧密间隔的VCSEL和光电检测器，可用于需要独立操作的应用
公开(公告)号：US06835992B1
公开(公告)日：2004-12-28
申请号：US09484348
申请日：2000-01-18
申请人： Stanley E. Swirhun , Jeffrey W. Scott
发明人： Stanley E. Swirhun , Jeffrey W. Scott
IPC分类号： H01L3106
CPC分类号： H01S5/0264 , H01S5/02208 , H01S5/02244 , H01S5/02248 , H01S5/02284 , H01S5/0262 , H01S5/06226 , H01S5/183 , H01S5/18388 , Y10S148/095 , Y10S148/128
摘要： A monolthically integrated VCSEL and photodetector, and a method of manufacturing same, are disclosed for applications where the VCSEL and photodetector require separate operation such as duplex serial data communications applications. A first embodiment integrates a VCSEL with an MSM photodetector on a semi-insulating substrate. A second embodiment builds the layers of a p-i-n photodiode on top of layers forming a VCSEL using a standard VCSEL process. The p-i-n layers are etched away in areas where VCSELs are to be formed and left where the photodetectors are to be formed. The VCSELs underlying the photodetectors are inoperable, and serve to recirculate photons back into the photodetector not initially absorbed. The transmit and receive pairs are packaged in a single package for interface to multifiber ferrules. The distance between the devices is precisely defined photolithographically, thereby making alignment easier.
摘要翻译：公开了一种单分布式VCSEL和光电检测器及其制造方法，其中VCSEL和光电探测器需要单独的操作，例如双工串行数据通信应用。第一实施例将VCSEL与半绝缘衬底上的MSM光电检测器集成。第二实施例使用标准VCSEL工艺在形成VCSEL的层的顶部上构建p-i-n光电二极管的层。在要形成VCSEL的区域中蚀刻掉p-i-n层，并留在要形成光电探测器的位置。光电探测器下面的VCSEL是不可操作的，并且用于将光子再循环回到初始被吸收的光电探测器中。发送和接收对被封装在单个封装中，用于与多光纤套圈的接口。设备之间的距离是光刻的精确定义，从而使对准更容易。

10. 发明授权

US5510272A Method for fabricating solar cell 失效
标题翻译：制造太阳能电池的方法
公开(公告)号：US5510272A
公开(公告)日：1996-04-23
申请号：US352118
申请日：1994-12-01
申请人： Hiroaki Morikawa , Hisao Kumabe
发明人： Hiroaki Morikawa , Hisao Kumabe
IPC分类号： H01L31/04 , H01L31/0352 , H01L31/18
CPC分类号： H01L31/1892 , H01L31/035281 , H01L31/1804 , H01L31/1868 , Y02E10/547 , Y02P70/521 , Y10S136/29 , Y10S148/125 , Y10S148/128 , Y10S148/135 , Y10S148/153 , Y10S438/958 , Y10S438/977
摘要： In a method of producing a solar cell, a photovoltaic thin semiconductor crystalline film is formed on an underlying substrate and hydrogen passivated throughout the film thickness direction of the photovoltaic film whereby a high efficiency solar cell is obtained. In addition, since the passivation process is performed before forming a rear surface electrode on the thin semiconductor crystalline film, the passivation process is not limited by the rear surface electrode. Thereby, a solar cell having a higher energy conversion efficiency is obtained. The passivation process is performed by exposing the thin semiconductor crystalline film to a hydrogen ion ambient having a low acceleration energy, below 2 KeV, or to a plasma ambient. Therefore, the uniformity of the passivation process at a wafer surface is improved and a large area wafer can be efficient processed. Furthermore, the passivation process can be performed to a plurality of solar cells having the thin semiconductor crystalline films and arranged in a module.
摘要翻译：在制造太阳能电池的方法中，在下层基板上形成光电薄膜半导体结晶膜，在光电膜的整个膜厚方向上氢钝化，得到高效率的太阳能电池。此外，由于在薄半导体结晶膜上形成后表面电极之前进行钝化处理，所以钝化处理不受背面电极的限制。从而获得具有较高能量转换效率的太阳能电池。通过将薄半导体晶体膜暴露于具有低加速能量，低于2KeV的氢离子环境或者等离子体环境来进行钝化处理。因此，晶片表面的钝化处理的均匀性得到改善，可以有效地处理大面积晶片。此外，可以对具有薄半导体晶体膜并且布置在模块中的多个太阳能电池执行钝化处理。

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