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1. 发明授权

US09910107B2 Patterned magnetoresistive (MR) device with adjacent flux absorbing stripes 有权
公开(公告)号：US09910107B2
公开(公告)日：2018-03-06
申请号：US14926069
申请日：2015-10-29
申请人： Headway Technologies, Inc.
发明人： Yuchen Zhou , Yimin Guo
IPC分类号： G01R33/09 , G11B5/39 , B82Y25/00 , B82Y40/00 , H01F10/32 , H01F41/30
CPC分类号： G01R33/093 , B82Y25/00 , B82Y40/00 , G01R33/09 , G01R33/091 , G11B5/3906 , G11B5/3925 , G11B5/398 , G11B2005/3996 , H01F10/325 , H01F10/3254 , H01F41/302
摘要： A magnetic sensor with increased sensitivity, lower noise, and improved frequency response is described. The sensor's free layer is ribbon shaped and is closely flanked at each long edge by a ribbon of magnetically soft, high permeability material. Side stripes of soft magnetic material absorb external field flux and concentrate the flux to flow into the sensor's edges to promote larger MR sensor magnetization rotation. Side stripes are located in the plane of the free layer at a maximum distance of 0.1 microns from each side of the free layer. The free layer has a width 1 micron, and an aspect ratio (thickness/width) of at least 5. Preferably, Mfilmtfilm>Mfreetfree, where Mfilm and Mfree are the magnetization of the soft magnetic layers and free layer, respectively, and ffilm and tfree are the thickness of the soft magnetic layers and free layer, respectively.

2. 发明授权

US08711524B2 Patterned MR device with controlled shape anisotropy 有权
标题翻译：具有受控形状各向异性的图案化MR器件
公开(公告)号：US08711524B2
公开(公告)日：2014-04-29
申请号：US12012667
申请日：2008-02-05
申请人： Yuchen Zhou , Yimin Guo
发明人： Yuchen Zhou , Yimin Guo
IPC分类号： G11B5/33
CPC分类号： G01R33/093 , B82Y25/00 , B82Y40/00 , G01R33/09 , G01R33/091 , G11B5/3906 , G11B5/3925 , G11B5/398 , G11B2005/3996 , H01F10/325 , H01F10/3254 , H01F41/302
摘要： A magnetic sensor with increased sensitivity, lower noise, and improved frequency response is described. The sensor's free layer is ribbon shaped and is closely flanked at each long edge by a ribbon of magnetically soft, high permeability material. This side pattern absorbs external field flux, concentrating it to flow into the sensor's edges to promote larger MR sensor magnetization rotation.
摘要翻译：描述了具有增加的灵敏度，较低噪声和改善的频率响应的磁传感器。传感器的自由层是带状的，并且通过磁软，高磁导率材料的带在每个长边缘处紧密地侧接。该侧面图吸收外部磁场通量，将其集中流入传感器的边缘，以促进较大的MR传感器磁化旋转。

3. 发明授权

US07218103B2 Methods for manufacturing a thin film magnetic sensor 有权
标题翻译：制造薄膜磁传感器的方法
公开(公告)号：US07218103B2
公开(公告)日：2007-05-15
申请号：US11455331
申请日：2006-06-19
申请人： Nobukiyo Kobayashi , Kiwamu Shirakawa , Yasushi Kaneta
发明人： Nobukiyo Kobayashi , Kiwamu Shirakawa , Yasushi Kaneta
IPC分类号： G01R33/09 , G01R33/02
CPC分类号： G01R33/09 , G11B5/3163 , G11B5/3183 , G11B5/3925 , Y10T29/49002
摘要： A method of manufacturing a thin film magnetic sensor comprising: forming a projection on a surface of an insulating substrate formed of an insulating nonmagnetic material by removing an unnecessary portion of the insulating substrate from a surface region thereof or by depositing a thin film formed of an insulating nonmagnetic material on the surface of the insulating substrate; forming a pair of thin film yokes positioned to face each other with the projection interposed therebetween and completely electrically separated from each other, the thin film yokes being formed by depositing a thin film formed of a soft magnetic material on the surface of the insulating substrate having the projection formed thereon, followed by partially removing the thin film formed of the soft magnetic material until at least a tip surface of the projection is exposed to the outside; and depositing a GMR film having an electrical resistivity higher than that of the soft magnetic material on the tip surface of the projection and on upper surfaces of the thin film yokes contiguous to the projection such that the GMR film is electrically connected to the upper surfaces of the thin film yokes.
摘要翻译：一种制造薄膜磁传感器的方法，包括：通过从其表面区域去除绝缘基板的不需要部分，或者通过沉积由绝缘非磁性材料形成的薄膜，形成由绝缘非磁性材料形成的绝缘基板的表面上的突起在绝缘基板的表面上绝缘非磁性材料; 形成一对薄膜轭，该薄膜磁轭定位成彼此面对并具有彼此完全电气分离的彼此面对的薄膜磁轭，所述薄膜磁轭是通过在绝缘衬底的表面上沉积由软磁性材料形成的薄膜而形成的，突起形成在其上，随后部分地去除由软磁性材料形成的薄膜，直到凸起的至少一个尖端表面暴露于外部; 以及将具有比软磁性材料的电阻率高的电阻率的GMR膜沉积在突起的尖端表面上以及与突起相邻的薄膜轭的上表面上，使得GMR膜电连接到薄膜轭。

4. 发明授权

US07170287B2 Thin film magnetic sensor and method of manufacturing the same 有权
标题翻译：薄膜磁传感器及其制造方法
公开(公告)号：US07170287B2
公开(公告)日：2007-01-30
申请号：US10853619
申请日：2004-05-24
申请人： Nobukiyo Kobayashi , Kiwamu Shirakawa , Yasushi Kaneta
发明人： Nobukiyo Kobayashi , Kiwamu Shirakawa , Yasushi Kaneta
IPC分类号： G01R33/09 , G01R33/02
CPC分类号： G01R33/09 , G11B5/3163 , G11B5/3183 , G11B5/3925 , Y10T29/49002
摘要： A thin film magnetic sensor comprises a pair of thin film yokes each formed of a soft magnetic material, the thin film yokes being arranged to face each other with a gap interposed therebetween; a GMR film electrically connected to the pair of the thin film yokes and having an electrical resistivity higher than that of the soft magnetic material; and an insulating substrate supporting the thin film yokes and the GMR film and formed of an insulating nonmagnetic material. A gap column of a multilayer structure including a layer formed of an insulating nonmagnetic material and a layer of the GMR film is arranged within the gap, and the thickness of the GMR film is uniform over the gap length.
摘要翻译：薄膜磁传感器包括由软磁性材料形成的一对薄膜磁轭，该薄膜磁轭被布置成彼此面对并间隔开; 电连接到所述一对薄膜轭铁并且具有比软磁性材料电阻率高的电阻率的GMR膜; 以及支撑薄膜磁轭和GMR膜并由绝缘非磁性材料形成的绝缘基板。包括由绝缘非磁性材料形成的层和GMR膜的层的多层结构的间隙列布置在间隙内，并且GMR膜的厚度在间隙长度上是均匀的。

5. 发明授权

US07100267B2 Magnetic head, method for producing same, and magnetic recording and/or reproducing system 有权
标题翻译：磁头，其制造方法以及磁记录和/或再现系统
公开(公告)号：US07100267B2
公开(公告)日：2006-09-05
申请号：US10635508
申请日：2003-08-07
申请人： Hiroaki Yoda , Yuichi Osawa , Tomomi Funayama
发明人： Hiroaki Yoda , Yuichi Osawa , Tomomi Funayama
IPC分类号： G11B5/127 , G11B5/187
CPC分类号： G11B5/3925 , G11B5/00 , G11B5/127 , G11B5/1278 , G11B5/3116 , G11B2005/0002 , G11B2005/0021 , Y10T29/49039 , Y10T29/49043 , Y10T29/49044 , Y10T29/49046 , Y10T29/49055 , Y10T29/49067
摘要： A method for producing a magnetic head, including the steps of forming a magnetic body on a substrate, the magnetic body including a principal plane facing the substrate and a rear plane opposite to the principal plane; applying a beam to the rear plane of the magnetic body and forming a portion defining a hole extending from the rear plane to the principal plane; forming a magnetic gap in the hole; and separating the magnetic body and the magnetic gap from the substrate and forming medium facing surface substantially coplanar with the principal plane.
摘要翻译：一种制造磁头的方法，包括以下步骤：在基板上形成磁体，所述磁体包括面向所述基板的主平面和与所述主平面相对的后平面; 将光束施加到磁体的后平面并形成限定从后平面延伸到主平面的孔的部分; 在孔中形成磁隙; 并且将磁体和磁隙从衬底分离并且形成与主平面大致共面的介质面对表面。

6. 发明授权

US06977799B2 Magnetic head comprising a multilayer magnetoresistive device and a yoke for introducing magnetic flux from a medium to the magnetoresistive device 失效
标题翻译：磁头包括多层磁阻器件和用于将磁通量从介质引入到磁阻器件的磁轭
公开(公告)号：US06977799B2
公开(公告)日：2005-12-20
申请号：US10896774
申请日：2004-07-22
申请人： Masayoshi Hiramoto , Nozomu Matsukawa , Akihiro Odagawa , Kenji Iijima , Hiroshi Sakakima
发明人： Masayoshi Hiramoto , Nozomu Matsukawa , Akihiro Odagawa , Kenji Iijima , Hiroshi Sakakima
IPC分类号： G11B5/012 , G11B5/11 , G11B5/39 , G11B5/40
CPC分类号： B82Y25/00 , B82Y10/00 , G11B5/012 , G11B5/11 , G11B5/3903 , G11B5/3909 , G11B5/3916 , G11B5/3925 , G11B5/398 , G11B5/40 , G11B2005/3996
摘要： The present invention provides a magnetic head having improved characteristics, using a magnetoresistive device in which current flows across the film plane such as a TMR device. In a first magnetic head of the present invention, when the area of a non-magnetic layer is defined as a device cross-section area, and the area of a yoke is defined as a yoke area, viewed along the direction perpendicular to the surface of the substrate over which the yoke and the magnetoresistive device are formed, then the device cross-section area is not less than 30% of the yoke area, so that a resistance increase of the device cross-section area is suppressed. In a second magnetic head of the present invention, a magnetoresistive device is formed on a substrate, and a yoke is provided above a non-magnetic layer constituting the device. In a third magnetic head of the present invention, the free layer of the magnetoresistive device includes at least two magnetic films and at least one non-magnetic film that are laminated alternately, and the thickness of the non-magnetic layer is not less than 2 nm and not more than 10 nm, and magnetostatic coupling is dominant. In a fourth magnetic head of the present invention, a magnetic gap is provided adjacent to the magnetoresistive device and the magnetic films are coupled antiferromagnetically.
摘要翻译：本发明提供一种具有改进特性的磁头，其使用磁阻装置，其中电流流过诸如TMR装置的膜平面。在本发明的第一磁头中，当非磁性层的面积被定义为器件横截面积，并且将磁轭的面积定义为磁轭面积时，沿垂直于表面的方向观察在形成磁轭和磁阻装置的基板上，器件截面积不小于磁轭面积的30％，从而可以抑制器件截面积的电阻增加。在本发明的第二磁头中，在基板上形成磁阻装置，在构成装置的非磁性层的上方设置磁轭。在本发明的第三磁头中，磁阻装置的自由层包括至少两个磁性膜和交替层叠的至少一个非磁性膜，非磁性层的厚度不小于2 nm，不大于10nm，静磁耦合为主。在本发明的第四磁头中，与磁阻装置相邻设置有磁隙，并且磁膜与反铁磁耦合。

7. 发明授权

US06669787B2 Method of manufacturing a spin valve structure 失效
公开(公告)号：US06669787B2
公开(公告)日：2003-12-30
申请号：US09878980
申请日：2001-06-12
申请人： Murray Fulton Gillies , Antonius Emilius Theodorus Kuiper
发明人： Murray Fulton Gillies , Antonius Emilius Theodorus Kuiper
IPC分类号： C23C880
CPC分类号： H01L27/224 , B82Y10/00 , B82Y25/00 , B82Y40/00 , G11B5/3903 , G11B5/3925 , H01F10/3259 , H01F10/3268 , H01F41/307 , H01L43/12 , Y10S148/118 , Y10T428/1129
摘要： The invention relates to a method of manufacturing a spin valve structure (1) of the GMR-type. Such a structure includes a stack of a magnetic layer (11a 11b), a nonmagnetic layer (15) and a sense layer (17) of a ferromagnetic material. In order to obtain a spin valve structure having a very good GMR effect the method comprises the following specific steps: oxidation of the ferromagnetic material of the sense layer; deposition of aluminium on the oxidized ferromagnetic material; oxidation of the deposited aluminium using oxygen from the oxidized ferromagnetic material.

8. 发明申请

US20030193757A1 Magnetic head and magnetic recording/reproduction device 失效
标题翻译：磁头和磁记录/再现装置
公开(公告)号：US20030193757A1
公开(公告)日：2003-10-16
申请号：US10424844
申请日：2003-04-29
申请人： Kabushiki Kaisha Toshiba
发明人： Tomomi Funayama , Yuichi Osawa , Masatoshi Yoshikawa , Hiroaki Yoda
IPC分类号： G11B005/39
CPC分类号： B82Y25/00 , B82Y10/00 , G11B5/1278 , G11B5/3183 , G11B5/3903 , G11B5/3925 , G11B2005/3996
摘要： The objective of this invention is to provide a yoke-type magnetic head and a magnetic recording device in which Barkhausen noise is low. It is possible to induce a magnetic flux efficiently within a magnetic head by using a granular magnetic film that exhibits both soft magnetic properties and a high resistance, which suppresses any shunt of the flow of the sense current into the magnetic yokes, thus preventing any deterioration insensitivity. Since this means that eddy currents can be suppressed, even during use in high-frequency regions, the frequency response characteristics are also improved. In addition, since the magnetic grains within the granular magnetic film are nano-sized, the dimensions of magnetic domains therein are also miniaturized to match that size, and thus there is also substantially no movement of the magnetic domain walls and this miniaturization also makes it possible to suppress the generation of Barkhausen noise. A similar effect can also be obtained by inducing maze domains within the magnetic yokes.
摘要翻译：本发明的目的是提供一种轭型磁头和一种其中巴克豪森噪声低的磁记录装置。通过使用表现出软磁性能和高电阻的粒状磁性膜，能够有效地在磁头内引起磁通，这抑制了磁轭中感应电流流动的任何分流，从而防止任何劣化不敏感。由于这意味着即使在高频区域使用时也能够抑制涡流，所以也提高了频率响应特性。此外，由于粒状磁性膜内的磁性粒子是纳米尺寸的，因此其中的磁畴的尺寸也小型化以与该尺寸相匹配，因此也基本上没有磁畴壁的移动，并且这种小型化也使得它可能抑制巴克豪森噪音的产生。通过诱导磁轭内的迷宫结构也可以获得类似的效果。

9. 发明授权

US06542343B1 Tunnel valve head design to lower resistance 失效
标题翻译：隧道阀头设计降低阻力
公开(公告)号：US06542343B1
公开(公告)日：2003-04-01
申请号：US09636386
申请日：2000-08-09
申请人： Hardayal Singh Gill
发明人： Hardayal Singh Gill
IPC分类号： G11B539
CPC分类号： B82Y25/00 , B82Y10/00 , G11B5/012 , G11B5/3903 , G11B5/3909 , G11B5/3925
摘要： A magnetic tunnel junction (MTJ) head for a magnetic recording system includes a MTJ valve and a first flux guide disposed proximate a first edge of the MTJ valve. The first flux guide has a first portion, which defines the track width, proximate a an air bearing surface of the MTJ head and a second portion proximate the first edge. The width of the first portion, the track width, is smaller than the width of the second portion, the MTJ valve's width. The resistance of the MTJ valve is lower since the cross-sectional area of the MTJ valve is not decreased as the track width is decreased. The MTJ head further includes a second flux guide proximate a second edge, which is farther from the air bearing surface than the first edge.
摘要翻译：用于磁记录系统的磁隧道结（MTJ）磁头包括MTJ阀和靠近MTJ阀的第一边缘设置的第一磁通引导件。第一通量引导件具有限定轨道宽度的第一部分，靠近MTJ头部的空气支承表面和靠近第一边缘的第二部分。第一部分的宽度，轨道宽度小于第二部分的宽度，MTJ阀的宽度。 MTJ阀的阻力较低，因为MTJ阀的横截面积不会随轨道宽度的减小而减小。 MTJ头还包括靠近第二边缘的第二通量引导件，其比空气支承表面比第一边缘更远。

10. 发明申请

US20020186515A1 Low temperature yoke type tunnel valve sensor 有权
标题翻译：低温轭型隧道阀传感器
公开(公告)号：US20020186515A1
公开(公告)日：2002-12-12
申请号：US09878817
申请日：2001-06-11
申请人： INTERNATIONAL BUSINESS MACHINES CORPORATION
发明人： Hardayal Singh Gill
IPC分类号： G11B005/39
CPC分类号： B82Y25/00 , B82Y10/00 , G11B5/3133 , G11B5/3909 , G11B5/3919 , G11B5/3925 , G11B5/3967 , G11B5/40 , G11B2005/3996
摘要： A read head includes electrically conductive ferromagnetic first and second yoke layers and a tunnel valve sensor which is recessed from the ABS and is located between the first and second yoke layers. The first and second yoke layers extend to an air bearing surface (ABS) for conducting flux to the sensor and extend into the head beyond the sensor. A bottom copper structure interfaces a bottom surface of the tunnel valve sensor and a top copper structure interfaces a top surface of the tunnel valve sensor. In a first embodiment of the invention, the first and second copper structures conduct heat from the sensor to the first and second yoke layers respectively, and in a second embodiment of the invention the bottom copper structure conducts heat to a substrate while the top copper structure conducts from the sensor to the second yoke layer. Further, in the first embodiment the first and second yoke layers serve as leads for a tunneling current while in the second embodiment the bottom copper structure and the second yoke layer serve as leads for the tunneling current.
摘要翻译：读头包括导电铁磁第一和第二磁轭层以及从ABS凹陷并位于第一和第二磁轭层之间的隧道阀传感器。第一和第二磁轭层延伸到空气轴承表面（ABS），用于将助焊剂传导到传感器并延伸到头部超过传感器。底部铜结构与隧道阀传感器的底表面接合，顶部铜结构与隧道阀传感器的顶表面相接。在本发明的第一实施例中，第一和第二铜结构分别将传热器传导到第一和第二磁轭层，并且在本发明的第二实施例中，底部铜结构将热量传导到衬底，而顶部铜结构从传感器传导到第二磁轭层。此外，在第一实施例中，第一和第二磁轭层用作隧道电流的引线，而在第二实施例中，底部铜结构和第二磁轭层用作隧道电流的引线。

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