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1. 发明授权

US09274184B2 Patterned MR device with controlled shape anisotropy 有权
标题翻译：具有受控形状各向异性的图案化MR器件
公开(公告)号：US09274184B2
公开(公告)日：2016-03-01
申请号：US14245635
申请日：2014-04-04
申请人： Headway Technologies, Inc.
发明人： Yuchen Zhou , Yimin Guo
IPC分类号： G11B5/39 , G01R33/09 , B82Y25/00 , B82Y40/00 , H01F10/32 , H01F41/30
CPC分类号： G01R33/093 , B82Y25/00 , B82Y40/00 , G01R33/09 , G01R33/091 , G11B5/3906 , G11B5/3925 , G11B5/398 , G11B2005/3996 , H01F10/325 , H01F10/3254 , H01F41/302
摘要： A magnetic sensor with increased sensitivity, lower noise, and improved frequency response is described. The sensor's free layer is ribbon shaped and is closely flanked at each long edge by a ribbon of magnetically soft, high permeability material. The side stripes of soft magnetic material absorb external field flux and concentrate the flux to flow into the sensor's edges to promote larger MR sensor magnetization rotation. The free layer may be deposited simultaneously with the soft magnetic layer when they are aligned in the same plane. When the flux absorbing stripes are positioned above or below the MR sensor, then the free layer and flux absorbing stripes are deposited in separate steps.
摘要翻译：描述了具有增加的灵敏度，较低噪声和改善的频率响应的磁传感器。传感器的自由层是带状的，并且通过磁软，高磁导率材料的带在每个长边缘处紧密地侧接。软磁材料的侧面条纹吸收外部磁场通量，并将助焊剂浓缩到流入传感器的边缘，以促进较大的MR传感器磁化旋转。当它们在同一平面中对准时，自由层可以与软磁层同时沉积。当磁通吸收条被定位在MR传感器的上方或下方时，则自由层和通量吸收条被分开沉积。

2. 发明授权

US09188650B2 Patterned MR device with controlled shape anisotropy 有权
标题翻译：具有受控形状各向异性的图案化MR器件
公开(公告)号：US09188650B2
公开(公告)日：2015-11-17
申请号：US14245641
申请日：2014-04-04
申请人： Headway Technologies, Inc.
发明人： Yuchen Zhou , Yimin Guo
IPC分类号： G11B5/39 , G01R33/09 , B82Y25/00 , B82Y40/00 , H01F10/32 , H01F41/30
CPC分类号： G01R33/093 , B82Y25/00 , B82Y40/00 , G01R33/09 , G01R33/091 , G11B5/3906 , G11B5/3925 , G11B5/398 , G11B2005/3996 , H01F10/325 , H01F10/3254 , H01F41/302
摘要： A magnetic sensor with increased sensitivity, lower noise, and improved frequency response is described. The sensor's free layer is ribbon shaped and is closely flanked at each long edge by a ribbon of magnetically soft, high permeability material. The side stripes of soft magnetic material absorb external field flux and concentrate the flux to flow into the sensor's edges to promote larger MR sensor magnetization rotation. Side stripes may be located in the plane of the free layer a maximum distance of 0.1 microns, above a plane that includes a top surface of the free layer, or below a plane that includes the bottom surface of the magnetic sensor. Edges of each side stripe may be aligned above or below a portion of the magnetic sensor.
摘要翻译：描述了具有增加的灵敏度，较低噪声和改善的频率响应的磁传感器。传感器的自由层是带状的，并且通过磁软，高磁导率材料的带在每个长边缘处紧密地侧接。软磁材料的侧面条纹吸收外部磁场通量，并将助焊剂浓缩到流入传感器的边缘，以促进较大的MR传感器磁化旋转。侧条可以位于自由层的平面中，最大距离为0.1微米，在包括自由层的顶表面的平面之上，或者在包括磁传感器的底表面的平面之下。每个侧条纹的边缘可以在磁传感器的一部分上方或下方对准。

3. 发明授权

US09910107B2 Patterned magnetoresistive (MR) device with adjacent flux absorbing stripes 有权
公开(公告)号：US09910107B2
公开(公告)日：2018-03-06
申请号：US14926069
申请日：2015-10-29
申请人： Headway Technologies, Inc.
发明人： Yuchen Zhou , Yimin Guo
IPC分类号： G01R33/09 , G11B5/39 , B82Y25/00 , B82Y40/00 , H01F10/32 , H01F41/30
CPC分类号： G01R33/093 , B82Y25/00 , B82Y40/00 , G01R33/09 , G01R33/091 , G11B5/3906 , G11B5/3925 , G11B5/398 , G11B2005/3996 , H01F10/325 , H01F10/3254 , H01F41/302
摘要： A magnetic sensor with increased sensitivity, lower noise, and improved frequency response is described. The sensor's free layer is ribbon shaped and is closely flanked at each long edge by a ribbon of magnetically soft, high permeability material. Side stripes of soft magnetic material absorb external field flux and concentrate the flux to flow into the sensor's edges to promote larger MR sensor magnetization rotation. Side stripes are located in the plane of the free layer at a maximum distance of 0.1 microns from each side of the free layer. The free layer has a width 1 micron, and an aspect ratio (thickness/width) of at least 5. Preferably, Mfilmtfilm>Mfreetfree, where Mfilm and Mfree are the magnetization of the soft magnetic layers and free layer, respectively, and ffilm and tfree are the thickness of the soft magnetic layers and free layer, respectively.

4. 发明申请

US20160329087A1 Spin Transfer MRAM Device with Reduced Coefficient of MTJ Resistance Variation 审中-公开
标题翻译：具有降低MTJ电阻系数的自旋转移MRAM器件
公开(公告)号：US20160329087A1
公开(公告)日：2016-11-10
申请号：US15217148
申请日：2016-07-22
申请人： Headway Technologies, Inc.
发明人： Yimin Guo
IPC分类号： G11C11/16
CPC分类号： G11C11/161 , G11C11/16 , G11C11/1655 , G11C11/1657 , G11C11/1659 , G11C11/1673 , G11C11/1675
摘要： We describe the manufacturing process for and structure of a CPP MTJ MRAM unit cell that utilizes transfer of spin angular momentum as a mechanism for changing the magnetic moment direction of a free layer. The cell is formed of a vertically or horizontally series connected sequence of N sub-cells, each sub-cell being an identical MTJ element. A statistical population of such multiple sub-cell unit cells has a variation of resistance that is less by a factor of N−1/2 than that of a population of single sub-cells. As a result, such unit cells have an improved read margin while not requiring an increase in the critical switching current.
摘要翻译：我们描述了使用自旋角动量转移作为改变自由层的磁矩方向的机制的CPP MTJ MRAM单元的制造过程和结构。该单元由N个子单元的垂直或水平串联连接的序列形成，每个子单元是相同的MTJ元件。这种多个亚细胞单位细胞的统计群体具有小于单个亚细胞群的N-1/2因子的电阻变化。结果，这种单元电池具有改善的读取裕度，而不需要增加关键开关电流。

5. 发明申请

US20160047865A1 Patterned MR Device with Controlled Shape Anisotropy 审中-公开
标题翻译：具有受控形状各向异性的图案化MR器件
公开(公告)号：US20160047865A1
公开(公告)日：2016-02-18
申请号：US14926069
申请日：2015-10-29
申请人： Headway Technologies, Inc.
发明人： Yuchen Zhou , Yimin Guo
IPC分类号： G01R33/09
CPC分类号： G01R33/093 , B82Y25/00 , B82Y40/00 , G01R33/09 , G01R33/091 , G11B5/3906 , G11B5/3925 , G11B5/398 , G11B2005/3996 , H01F10/325 , H01F10/3254 , H01F41/302
摘要： A magnetic sensor with increased sensitivity, lower noise, and improved frequency response is described. The sensor's free layer is ribbon shaped and is closely flanked at each long edge by a ribbon of magnetically soft, high permeability material. Side stripes of soft magnetic material absorb external field flux and concentrate the flux to flow into the sensor's edges to promote larger MR sensor magnetization rotation. Side stripes may be located in the plane of the free layer a maximum distance of 0.1 microns, above a plane that includes a free layer top surface, or below a plane that includes the magnetic sensor bottom surface. Edges of each side stripe may be aligned above or below a portion of the magnetic sensor. Moreover, each side stripe may have a tapered edge such that the side stripes have increasing thickness with increasing distance from the magnetic sensor.
摘要翻译：描述了具有增加的灵敏度，较低噪声和改善的频率响应的磁传感器。传感器的自由层是带状的，并且通过磁软，高磁导率材料的带在每个长边缘处紧密地侧接。软磁材料的侧条吸收外部磁场通量，并将磁通集中到流体传感器的边缘，以促进较大的MR传感器磁化旋转。侧条可以位于自由层的平面中，最大距离为0.1微米，高于包括自由层顶表面或包括磁性传感器底表面的平面的平面。每个侧条纹的边缘可以在磁传感器的一部分上方或下方对准。此外，每个侧条可以具有锥形边缘，使得侧条具有随着与磁传感器的距离的增加而增加的厚度。

6. 发明申请

US20140220240A1 Patterned MR Device with Controlled Shape Anisotropy 审中-公开
标题翻译：具有受控形状各向异性的图案化MR器件
公开(公告)号：US20140220240A1
公开(公告)日：2014-08-07
申请号：US14245635
申请日：2014-04-04
申请人： Headway Technologies, Inc.
发明人： Yuchen Zhou , Yimin Guo
IPC分类号： H01F41/30
CPC分类号： G01R33/093 , B82Y25/00 , B82Y40/00 , G01R33/09 , G01R33/091 , G11B5/3906 , G11B5/3925 , G11B5/398 , G11B2005/3996 , H01F10/325 , H01F10/3254 , H01F41/302
摘要： A magnetic sensor with increased sensitivity, lower noise, and improved frequency response is described. The sensor's free layer is ribbon shaped and is closely flanked at each long edge by a ribbon of magnetically soft, high permeability material. The side stripes of soft magnetic material absorb external field flux and concentrate the flux to flow into the sensor's edges to promote larger MR sensor magnetization rotation. The free layer may be deposited simultaneously with the soft magnetic layer when they are aligned in the same plane. When the flux absorbing stripes are positioned above or below the MR sensor, then the free layer and flux absorbing stripes are deposited in separate steps.
摘要翻译：描述了具有增加的灵敏度，较低噪声和改善的频率响应的磁传感器。传感器的自由层是带状的，并且通过磁软，高磁导率材料的带在每个长边缘处紧密地侧接。软磁材料的侧面条纹吸收外部磁场通量，并将助焊剂浓缩到流入传感器的边缘，以促进较大的MR传感器磁化旋转。当它们在同一平面中对准时，自由层可以与软磁层同时沉积。当磁通吸收条被定位在MR传感器的上方或下方时，则自由层和通量吸收条被分开沉积。

7. 发明申请

US20140218020A1 Patterned MR Device with Controlled Shape Anisotropy 审中-公开
标题翻译：具有受控形状各向异性的图案化MR器件
公开(公告)号：US20140218020A1
公开(公告)日：2014-08-07
申请号：US14245641
申请日：2014-04-04
申请人： Headway Technologies, Inc.
发明人： Yuchen Zhou , Yimin Guo
IPC分类号： G01R33/09
CPC分类号： G01R33/093 , B82Y25/00 , B82Y40/00 , G01R33/09 , G01R33/091 , G11B5/3906 , G11B5/3925 , G11B5/398 , G11B2005/3996 , H01F10/325 , H01F10/3254 , H01F41/302
摘要： A magnetic sensor with increased sensitivity, lower noise, and improved frequency response is described. The sensor's free layer is ribbon shaped and is closely flanked at each long edge by a ribbon of magnetically soft, high permeability material. The side stripes of soft magnetic material absorb external field flux and concentrate the flux to flow into the sensor's edges to promote larger MR sensor magnetization rotation. Side stripes may be located in the plane of the free layer a maximum distance of 0.1 microns, above a plane that includes a top surface of the free layer, or below a plane that includes the bottom surface of the magnetic sensor. Edges of each side stripe may be aligned above or below a portion of the magnetic sensor.
摘要翻译：描述了具有增加的灵敏度，较低噪声和改善的频率响应的磁传感器。传感器的自由层是带状的，并且通过磁软，高磁导率材料的带在每个长边缘处紧密地侧接。软磁材料的侧面条纹吸收外部磁场通量，并将助焊剂浓缩到流入传感器的边缘，以促进较大的MR传感器磁化旋转。侧条可以位于自由层的平面中，最大距离为0.1微米，在包括自由层的顶表面的平面之上，或者在包括磁传感器的底表面的平面之下。每个侧条纹的边缘可以在磁传感器的一部分上方或下方对准。

8. 发明授权

US09865321B2 Spin transfer MRAM device with reduced coefficient of MTJ resistance variation 有权
公开(公告)号：US09865321B2
公开(公告)日：2018-01-09
申请号：US15217148
申请日：2016-07-22
申请人： Headway Technologies, Inc.
发明人： Yimin Guo
IPC分类号： G11C11/16
CPC分类号： G11C11/161 , G11C11/16 , G11C11/1655 , G11C11/1657 , G11C11/1659 , G11C11/1673 , G11C11/1675
摘要： We describe the manufacturing process for and structure of a CPP MTJ MRAM unit cell that utilizes transfer of spin angular momentum as a mechanism for changing the magnetic moment direction of a free layer. The cell is formed of a vertically or horizontally series connected sequence of N sub-cells, each sub-cell being an identical MTJ element. A statistical population of such multiple sub-cell unit cells has a variation of resistance that is less by a factor of N−1/2 than that of a population of single sub-cells. As a result, such unit cells have an improved read margin while not requiring an increase in the critical switching current.

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