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1. 发明授权

US06579737B2 Optical semiconductor module, its manufacture, reflection film, its manufacture, and laser and optical devices using reflection film 有权
公开(公告)号：US06579737B2
公开(公告)日：2003-06-17
申请号：US10187948
申请日：2002-07-03
申请人： Yoshihiro Yoneda , Akira Fukushima , Hajime Shoji , Haruhisa Soda
发明人： Yoshihiro Yoneda , Akira Fukushima , Hajime Shoji , Haruhisa Soda
IPC分类号： H01L2100
CPC分类号： G02B6/4248 , G02B6/4204 , G02B6/4212 , G02B6/4245 , G02B6/4253 , G02B6/4255 , G02B6/4259 , G02B6/4266 , G02B6/4267 , G02B6/4277 , G02B6/4286 , H01L2924/16195 , H01L2924/181 , H01S5/0021 , H01S5/02228 , H01S5/02248 , H01S5/02284 , H01S5/028 , H01S5/0287 , H01S5/0683 , H01L2924/00012
摘要： An optical semiconductor element and an optical element having an optical coupling facet are disposed on a support surface of a platform. The optical element is optically coupled to the optical semiconductor element at the optical coupling facet. A protective member covers the optical semiconductor element and is disposed at least in a light transmission area in a space between the semiconductor element and the optical coupling facet of the optical element. The protective member is made of gel acrylic modification resin. An optical semiconductor module having a sufficient moisture resistance and being suitable for low cost is provided.

2. 发明授权

US06448583B1 Optical semiconductor module, its manufacture, reflection film, its manufacture, and laser and optical devices using reflection film 有权
标题翻译：光学半导体模块，其制造，反射膜，其制造，以及使用反射膜的激光和光学器件
公开(公告)号：US06448583B1
公开(公告)日：2002-09-10
申请号：US09392239
申请日：1999-09-08
申请人： Yoshihiro Yoneda , Akira Fukushima , Hajime Shoji , Haruhisa Soda
发明人： Yoshihiro Yoneda , Akira Fukushima , Hajime Shoji , Haruhisa Soda
IPC分类号： H01L2715
CPC分类号： G02B6/4248 , G02B6/4204 , G02B6/4212 , G02B6/4245 , G02B6/4253 , G02B6/4255 , G02B6/4259 , G02B6/4266 , G02B6/4267 , G02B6/4277 , G02B6/4286 , H01L2924/16195 , H01L2924/181 , H01S5/0021 , H01S5/02228 , H01S5/02248 , H01S5/02284 , H01S5/028 , H01S5/0287 , H01S5/0683 , H01L2924/00012
摘要： An optical semiconductor element and an optical element having an optical coupling facet are disposed on a support surface of a platform. The optical element is optically coupled to the optical semiconductor element at the optical coupling facet. A protective member covers the optical semiconductor element and is disposed at least in a light transmission area in a space between the semiconductor element and the optical coupling facet of the optical element. The protective member is made of gel acrylic modification resin. An optical semiconductor module having a sufficient moisture resistance and being suitable for low cost is provided.
摘要翻译：光学半导体元件和具有光耦合面的光学元件设置在平台的支撑表面上。光学元件在光学耦合面处光耦合到光学半导体元件。保护构件覆盖光半导体元件，并且至少设置在半导体元件和光学元件的光耦合面之间的空间中的透光区域中。保护构件由凝胶丙烯酸改性树脂制成。提供了具有足够的耐湿性并且适合于低成本的光学半导体模块。

3. 发明授权

US5408487A Semiconductor laser 失效
标题翻译：半导体激光器
公开(公告)号：US5408487A
公开(公告)日：1995-04-18
申请号：US214212
申请日：1994-03-17
申请人： Toru Uchida , Chikashi Anayama , Susumu Yamazaki , Hirohide Kurakake , Akito Kuramata , Haruhisa Soda
发明人： Toru Uchida , Chikashi Anayama , Susumu Yamazaki , Hirohide Kurakake , Akito Kuramata , Haruhisa Soda
IPC分类号： H01S5/00 , H01S5/02 , H01S5/20 , H01S5/22 , H01S5/32 , H01S5/323 , H01S5/34 , H01S5/343 , H01S3/19
CPC分类号： B82Y20/00 , H01S5/2201 , H01S5/323 , H01S5/34313 , H01S2302/00 , H01S5/0206 , H01S5/2004 , H01S5/2009 , H01S5/3201 , H01S5/3211 , H01S5/3218 , H01S5/3403 , H01S5/3406 , H01S5/3415 , H01S5/342 , H01S5/34306
摘要： A group III-V compound semiconductor laser of a 1 .mu.m band having an excellent conversion efficiency and a high characteristic temperature. The semiconductor laser can emit light in a 1.3 .mu.m band or a 1.55 .mu.m, and has a laser structure including an active layer For emitting light, guide layers sandwiching the active layer and having a band gap larger than the active layer, and clad layers embracing the guide layers and having a band gap larger than the guide layers. The lattice constants of the guide layers and clad layers are larger than a1 by 0.5% or more and smaller than a2 by 0.5% or more, where a1 represents the lattice constant of GaAs and a2 is the lattice constant of InP.
摘要翻译：具有优异的转换效率和高特征温度的1μm带的III-V族化合物半导体激光器。半导体激光器可以发射1.3μm或1.55μm的光，并且具有包括有源层的激光结构为了发射光，夹持有源层并且具有比有源层大的带隙的引导层和包层包围引导层并具有比引导层大的带隙的层。引导层和包层的晶格常数比a1大0.5％以上且小于等于0.5％以上，其中a1表示GaAs的晶格常数，a2是InP的晶格常数。

4. 发明授权

US06924918B2 Optical modulator and method of manufacturing the same 有权
标题翻译：光调制器及其制造方法
公开(公告)号：US06924918B2
公开(公告)日：2005-08-02
申请号：US10660746
申请日：2003-09-12
申请人： Fumio Otake , Haruhisa Soda
发明人： Fumio Otake , Haruhisa Soda
IPC分类号： G02F1/025 , G02B6/12 , G02F1/015 , G02F1/225 , G02F1/03
CPC分类号： G02F1/2257 , G02B2006/12142
摘要： An optical modulator includes a p- or n-type semiconductor layer that is provided at an upper part of an optical waveguide path, and modulating electrodes that are provided at intervals on the semiconductor layer in an extension area of the optical waveguide path. The semiconductor layer has first regions located immediately under the modulating electrodes, and second regions located between the first regions. The second regions have separators that electrically separate the first regions from one another.
摘要翻译：光调制器包括设置在光波导路径的上部的p型或n型半导体层，以及在光波导路径的扩展区域中在半导体层上间隔设置的调制电极。半导体层具有位于调制电极正下方的第一区域和位于第一区域之间的第二区域。第二区域具有将第一区域彼此电分离的隔板。

5. 发明授权

US06836573B2 Directional coupler type optical modulator with traveling-wave electrode 失效
公开(公告)号：US06836573B2
公开(公告)日：2004-12-28
申请号：US10236341
申请日：2002-09-05
申请人： Haruhisa Soda
发明人： Haruhisa Soda
IPC分类号： G02F1035
CPC分类号： G02F1/3133 , G02F2201/127
摘要： A directional coupler type optical modulator with traveling-wave electrodes includes a first directional coupler region, a waveguide wave coupling region, a second directional coupler region, and a set of noncrossing traveling-wave electrodes disposed along the outside of the waveguides. The electrodes of each directional coupler are connected to the traveling-wave electrodes via air-bridges. The waveguide structures are of the P-I-N type having a common N-type conducting layer which provides delta-beta operation of the directional coupler, and both cross and bar states are controlled by a single input signal.

6. 发明授权

US06238943B1 Optical semiconductor device and a method of manufacturing the same 失效
标题翻译：光半导体装置及其制造方法
公开(公告)号：US06238943B1
公开(公告)日：2001-05-29
申请号：US09401784
申请日：1999-09-22
申请人： Hirohiko Kobayashi , Mitsuru Ekawa , Nirou Okazaki , Shouichi Ogita , Haruhisa Soda , Haruhiko Tabuchi , Takuya Fujii
发明人： Hirohiko Kobayashi , Mitsuru Ekawa , Nirou Okazaki , Shouichi Ogita , Haruhisa Soda , Haruhiko Tabuchi , Takuya Fujii
IPC分类号： H01L2100
CPC分类号： G02B6/12004 , G02B6/305 , G02B2006/12128 , G02B2006/12195 , H01S5/026 , H01S5/0265 , H01S5/1014 , H01S5/106 , H01S5/1064 , H01S5/20 , H01S5/2272 , H01S5/3428 , Y10S438/942
摘要： An optical semiconductor device of the present invention is provided with a core layer having a quantum well layer in that film thickness gets thinner from a inner region to an end portion in an optical waveguide region.
摘要翻译：本发明的光半导体装置具有在光波导区域中从内部区域到端部部分的薄膜厚度的量子阱层的芯层。

7. 发明授权

US4726031A Semiconductor laser 失效
标题翻译：半导体激光器
公开(公告)号：US4726031A
公开(公告)日：1988-02-16
申请号：US784594
申请日：1985-10-04
申请人： Kiyohide Wakao , Haruhisa Soda
发明人： Kiyohide Wakao , Haruhisa Soda
IPC分类号： H01S5/00 , H01S5/042 , H01S5/06 , H01S5/10 , H01S5/12 , H01S3/19
CPC分类号： H01S5/10 , H01S5/12 , H01S5/1057 , H01S5/106 , H01S5/1064 , H01S5/1243
摘要： A semiconductor laser including a stripe-shaped active layer, a clad region, and a diffraction grating. The stripe-shaped active layer has a thickness in a first direction, has a first energy gap, and extends in a second direction orthogonal to the first direction. The clad region surrounds the stripe-shaped active layer, and has a second energy band gap greater than the first energy band gap. The diffraction grating is provided in parallel with and adjacent to, the stripe-shaped active layer. The stripe-shaped active layer has a first portion with a first light propagation constant and with a first dimension in a third direction orthogonal to the first and second directions, and has a second portion with a second light propagation constant and with a second dimension in the third direction. The first dimension and the second dimension are different from each other. The second portion has a length L in the second direction. The stripe-shaped active layer satisfies the condition that a product of .DELTA..beta. and L is an odd multiple of .pi./2, where .DELTA..beta. is a difference between the first and second light propagation constants.
摘要翻译：一种包括条形有源层，包层区和衍射光栅的半导体激光器。条形有源层具有第一方向的厚度，具有第一能隙，并且沿与第一方向正交的第二方向延伸。包层区域围绕条状有源层，并且具有大于第一能带隙的第二能带隙。衍射光栅与条形有源层平行并相邻地设置。条形有源层具有第一部分，具有第一光传播常数，第一尺寸在与第一和第二方向正交的第三方向上，并且具有第二部分，具有第二光传播常数，第二部分具有第二尺寸第三个方向。第一维度和第二维度彼此不同。第二部分在第二方向上具有长度L. 条形有源层满足以下条件：DELTAβ和L的乘积是pi / 2的奇数倍，其中ΔTAβ是第一和第二光传播常数之间的差。

8. 发明授权

US06973238B2 Optical switch and optical communication system 失效
标题翻译：光开关和光通讯系统
公开(公告)号：US06973238B2
公开(公告)日：2005-12-06
申请号：US10655769
申请日：2003-09-05
申请人： Haruhisa Soda , Shigeru Nakagawa
发明人： Haruhisa Soda , Shigeru Nakagawa
IPC分类号： G02F1/313 , G02B6/42 , G02B6/26
CPC分类号： G02F1/3133 , G02F2201/127
摘要： A directional coupler type optical modulator with traveling-wave electrodes includes a first directional coupler region, a waveguide wave coupling region, a second directional coupler region, and a set of noncrossing traveling-wave electrodes disposed along the outside of the waveguides. The electrodes of each directional coupler are connected to the traveling-wave electrodes via air-bridges. The waveguide structures are of the P-I-N type having a common N-type conducting layer which provides delta-beta operation of the directional coupler, and both cross and bar states are controlled by a single input signal.
摘要翻译：具有行波电极的定向耦合器型光调制器包括第一定向耦合器区域，波导管耦合区域，第二定向耦合器区域和沿着波导的外侧布置的一组非交叉行波电极。每个定向耦合器的电极通过气桥连接到行波电极。波导结构是具有公共N型导电层的P-I-N型，其提供定向耦合器的delta-β操作，并且交叉和条状态都由单个输入信号控制。

9. 发明授权

US6081632A Method of producing optical waveguide system, optical device and optical coupler employing the same, optical network and optical circuit board 失效
标题翻译：制造光波导系统的方法，使用该光波导系统的光学装置和光耦合器，光网络和光电路板
公开(公告)号：US6081632A
公开(公告)日：2000-06-27
申请号：US951576
申请日：1997-10-16
申请人： Tetsuzo Yoshimura , Wataru Sotoyama , Katsusada Motoyoshi , Takeshi Ishitsuka , Koji Tsukamoto , Shigenori Aoki , Yasuhiro Yoneda , Satoshi Tatsuura , Haruhisa Soda , Tsuyoshi Yamamoto
发明人： Tetsuzo Yoshimura , Wataru Sotoyama , Katsusada Motoyoshi , Takeshi Ishitsuka , Koji Tsukamoto , Shigenori Aoki , Yasuhiro Yoneda , Satoshi Tatsuura , Haruhisa Soda , Tsuyoshi Yamamoto
IPC分类号： G02B6/00 , G02B6/10 , G02B6/12 , G02B6/125 , G02B6/13 , G02B6/138 , G02B6/14 , G02B6/28 , G02B6/293 , G02B6/30 , G02B6/34 , G02B6/35 , G02B6/42 , G02B6/43 , G02F1/01 , G02F1/025 , G02F1/065 , G02F1/313 , G02F1/355 , G02F1/377 , H01L51/00 , H01L51/30 , H04B10/213 , H04Q3/52 , H04Q11/00 , G02B1/04
CPC分类号： H01L51/42 , B82Y20/00 , G02B6/10 , G02B6/125 , G02B6/13 , G02B6/138 , G02B6/14 , G02B6/2804 , G02B6/2821 , G02B6/30 , G02B6/305 , G02B6/42 , G02B6/4204 , G02B6/4215 , G02B6/424 , G02F1/3137 , G02F1/3556 , G02B2006/12069 , G02B2006/12195 , G02B6/29316 , G02B6/29332 , G02B6/29395 , G02F1/0126 , H01L51/0034 , H01L51/0035 , H01L51/004 , H01L51/005 , H01L51/0052 , H01L51/0059 , H01L51/0062 , H01L51/0064 , H01L51/0077 , H01L51/5271 , Y02E10/549
摘要： A method of forming waveguides, refractive index distributions and optical couplings automatically by light incidence, and devices obtained thereby. A non-linear optical material which has excellent properties of a large degree of freedom for an optical circuit substrate composition, etc. is used for optical circuit devices and optical circuit substrates. A photoelectric device containing an organic conjugated polymer film is deposited on a substrate by vapor deposition polymerization as at least one function layer. An optical network is provided with optical wiring for exchanging signals between processing elements selected from electronic elements, electronic apparatuses, electrooptical elements and electrooptical apparatuses.
摘要翻译：通过光入射自动形成波导，折射率分布和光耦合的方法以及由此获得的器件。对于光电路器件和光电路基板，使用具有光学电路基板组合物等的自由度优异性优异的非线性光学材料。包含有机共轭聚合物膜的光电装置通过气相沉积聚合作为至少一个功能层沉积在基板上。光网络设置有用于在从电子元件，电子设备，电光元件和电光装置中选择的处理元件之间交换信号的光布线。

10. 发明授权

US06044097A Modulator integrated distributed feed-back laser diode module and device using the same 失效
标题翻译：调制器集成分布式反馈激光二极管模块和使用其的器件
公开(公告)号：US06044097A
公开(公告)日：2000-03-28
申请号：US268039
申请日：1994-06-29
申请人： Hiromitsu Kawamura , Kazuhiro Yamaji , Hisashi Hamaguchi , Haruhisa Soda , Kiyotsugu Kamite
发明人： Hiromitsu Kawamura , Kazuhiro Yamaji , Hisashi Hamaguchi , Haruhisa Soda , Kiyotsugu Kamite
IPC分类号： G02F1/01 , H01S5/026 , H01S5/042 , H01S5/062 , H01S5/0625 , H01S5/22 , H01S3/096
CPC分类号： H01S5/0265 , H01S5/0427 , G02F1/0121 , H01L2224/48091 , H01L2224/48247 , H01L2924/30107 , H01L2924/3011 , H01S5/02216 , H01S5/02276 , H01S5/02284 , H01S5/06226 , H01S5/2224
摘要： An optical semiconductor device circuit including a MI-DFB-LD capable of minimizing an extension in the wavelength of the output light in order to improve transmission speed and distance. The optical device circuit includes a semiconductor laser diode; an optical modulator for modulating output light of the semiconductor laser diode; a resistive element which is connected to the laser diode and which operates as a resistor at a high frequency; common connection substrate connected to the semiconductor laser diode and to the optical modulator; impedance element or signal reflection element connected to the common connection substrate; and ground connected to the impedance element or the signal reflection element.
摘要翻译：一种包括MI-DFB-LD的光学半导体器件电路，其能够最小化输出光的波长的扩展，以便提高传输速度和距离。光学器件电路包括半导体激光二极管; 用于调制半导体激光二极管的输出光的光调制器; 电阻元件，其连接到激光二极管，并以高频作为电阻器工作; 连接到半导体激光二极管和光调制器的公共连接基板; 阻抗元件或信号反射元件连接到公共连接基板; 并将接地连接到阻抗元件或信号反射元件。

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