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1. 发明申请

US20100099251A1 METHOD FOR NITRIDATION PRETREATMENT 审中-公开
标题翻译：硝化预处理方法
公开(公告)号：US20100099251A1
公开(公告)日：2010-04-22
申请号：US12256235
申请日：2008-10-22
申请人： XINYU FU , Jick M. Yu
发明人： XINYU FU , Jick M. Yu
IPC分类号： H01L21/768
CPC分类号： H01L21/76826 , H01L21/76814 , H01L21/76831 , H01L23/53238 , H01L2924/0002 , H01L2924/00
摘要： In one embodiment, a method for fabricating a damascene structure is provided which includes exposing a dielectric surface on a substrate to a nitrogen plasma to form a nitrided dielectric layer, wherein the dielectric surface contains a plurality of openings therein, depositing a barrier layer on the nitrided dielectric surface, and depositing a seed layer over the barrier layer. In some examples, the nitrogen plasma is formed from nitrogen gas or a mixture of nitrogen gas and hydrogen gas. The nitrogen plasma may be formed in a barrier deposition chamber or by a reactive preclean chamber. In another embodiment, a bulk layer may be deposited to fill the openings after depositing the seed layer. In one example, the bulk layer may contain copper, tungsten, or alloys thereof, and be deposited by an electrochemical plating process.
摘要翻译：在一个实施例中，提供了一种用于制造镶嵌结构的方法，其包括将衬底上的电介质表面暴露于氮等离子体以形成氮化介电层，其中电介质表面包含多个开口，在其上沉积阻挡层氮化电介质表面，并且在阻挡层上沉积种子层。在一些实例中，氮等离子体由氮气或氮气和氢气的混合物形成。氮等离子体可以形成在阻挡沉积室中或通过反应性预清洗室形成。在另一个实施例中，沉积种子层之后可沉积体层以填充开口。在一个实例中，本体层可以包含铜，钨或其合金，并且通过电化学电镀工艺沉积。

2. 发明申请

US20120070982A1 METHODS FOR FORMING LAYERS ON A SUBSTRATE 有权
标题翻译：在基材上形成层的方法
公开(公告)号：US20120070982A1
公开(公告)日：2012-03-22
申请号：US13226612
申请日：2011-09-07
申请人： JICK M. YU , RONG TAO , XINYU FU
发明人： JICK M. YU , RONG TAO , XINYU FU
IPC分类号： H01L21/768
CPC分类号： H01L21/2855 , H01L21/76843 , H01L21/76865 , H01L21/76868 , H01L21/76873 , H01L21/76879 , H01L2221/1089
摘要： Methods for forming layers on a substrate having one or more features formed therein are provided herein. In some embodiments, a method for forming layers on a substrate having one or more features formed therein may include depositing a seed layer within the one or more features; and etching the seed layer to remove at least a portion of the seed layer proximate an opening of the feature such that the seed layer comprises a first thickness disposed on a lower portion of a sidewall of the feature proximate a bottom of the feature and a second thickness disposed on an upper portion of the sidewall proximate the opening of the feature and wherein the first thickness is greater than the second thickness.
摘要翻译：本文提供了在其上形成有一个或多个特征的基底上形成层的方法。在一些实施例中，用于在其上形成有一个或多个特征的衬底上形成层的方法可包括在一个或多个特征内沉积种子层; 并且蚀刻种子层以去除邻近特征的开口的种子层的至少一部分，使得种子层包括设置在靠近特征的底部的特征的侧壁的下部的第一厚度，以及第二厚度设置在靠近特征开口的侧壁的上部，并且其中第一厚度大于第二厚度。

3. 发明申请

US20110315319A1 PRE-CLEAN CHAMBER WITH REDUCED ION CURRENT 审中-公开
标题翻译：具有降低离子电流的前清洁室
公开(公告)号：US20110315319A1
公开(公告)日：2011-12-29
申请号：US13166213
申请日：2011-06-22
申请人： JOHN C. FORSTER , TAE HONG HA , MURALI K. NARASIMHAN , XINYU FU , ARVIND SUNDARRAJAN , XIAOXI GUO
发明人： JOHN C. FORSTER , TAE HONG HA , MURALI K. NARASIMHAN , XINYU FU , ARVIND SUNDARRAJAN , XIAOXI GUO
IPC分类号： B08B5/00
CPC分类号： H01J37/32082
摘要： Apparatus for processing substrates are disclosed herein. In some embodiments, a substrate processing system may include a process chamber having a first volume to receive a plasma and a second volume for processing a substrate; a substrate support disposed in the second volume; and a plasma filter disposed in the process chamber between the first volume and the second volume such that a plasma formed in the first volume can only flow from the first volume to the second volume through the plasma filter. In some embodiments, the substrate processing system includes a process kit coupled to the process chamber, wherein the plasma filter is disposed in the process kit.
摘要翻译：本文公开了用于处理衬底的装置。在一些实施例中，衬底处理系统可以包括具有接收等离子体的第一体积和用于处理衬底的第二体积的处理室; 设置在所述第二体积中的基板支撑件; 以及设置在第一体积和第二体积之间的处理室中的等离子体过滤器，使得形成在第一体积中的等离子体仅能够通过等离子体过滤器从第一体积流到第二体积。在一些实施例中，衬底处理系统包括耦合到处理室的处理套件，其中等离子体过滤器设置在处理套件中。

4. 发明申请

US20130102144A1 METHODS FOR FORMING A METAL GATE STRUCTURE ON A SUBSTRATE 失效
标题翻译：在基材上形成金属结构结构的方法
公开(公告)号：US20130102144A1
公开(公告)日：2013-04-25
申请号：US13278335
申请日：2011-10-21
申请人： JIANXIN LEI , XINYU FU , SRINIVAS GANDIKOTA , JIAN Z. REN
发明人： JIANXIN LEI , XINYU FU , SRINIVAS GANDIKOTA , JIAN Z. REN
IPC分类号： H01L21/28
CPC分类号： H01L21/28088 , H01L29/4966
摘要： Methods for forming a metal gate structure on a substrate are provided herein. In some embodiments, a method for forming a metal gate structure on a substrate having a dielectric layer formed on the substrate may include depositing a metal layer while providing a process gas comprising oxygen to form an oxygen doped work function layer atop the dielectric layer; and depositing a metal gate layer atop dielectric layer.
摘要翻译：本文提供了在基板上形成金属栅极结构的方法。在一些实施例中，在衬底上形成具有介电层的衬底上形成金属栅极结构的方法可以包括沉积金属层，同时提供包含氧的工艺气体，以在电介质层的顶部形成氧掺杂的功函数层; 以及在电介质层顶上沉积金属栅极层。

5. 发明申请

US20110278165A1 PROCESS KIT SHIELD FOR IMPROVED PARTICLE REDUCTION 有权
标题翻译：用于改善颗粒减少的工艺套件
公开(公告)号：US20110278165A1
公开(公告)日：2011-11-17
申请号：US13106392
申请日：2011-05-12
申请人： MUHAMMAD RASHEED , RONGJUN WANG , ZHENDONG LIU , XINYU FU , XIANMIN TANG
发明人： MUHAMMAD RASHEED , RONGJUN WANG , ZHENDONG LIU , XINYU FU , XIANMIN TANG
IPC分类号： C23C14/04
CPC分类号： C23C14/35 , C23C14/564 , H01J37/32853 , H01J37/32871 , H01J37/34 , H01J37/3411
摘要： Apparatus for improved particle reduction are provided herein. In some embodiments, an apparatus may include a process kit shield comprising a one-piece metal body having an upper portion and a lower portion and having an opening disposed through the one-piece metal body, wherein the upper portion includes an opening-facing surface configured to be disposed about and spaced apart from a target of a physical vapor deposition chamber and wherein the opening-facing surface is configured to limit particle deposition on an upper surface of the upper portion of the one-piece metal body during sputtering of a target material from the target of the physical vapor deposition chamber.
摘要翻译：本文提供了用于改善颗粒减少的装置。在一些实施例中，一种装置可以包括一个包括具有上部和下部的一体式金属体的处理套件屏蔽件，并且具有穿过一体式金属体设置的开口，其中，上部包括面向开口的表面被配置为围绕物理气相沉积室的目标设置并隔开，并且其中所述面向开口的表面构造成在目标溅射期间限制所述一体金属体的上部的上表面上的颗粒沉积材料从物理气相沉积室的目标。

6. 发明申请

US20100105203A1 METHODS FOR REDUCING DAMAGE TO SUBSTRATE LAYERS IN DEPOSITION PROCESSES 失效
标题翻译：降低沉积过程中底层损伤的方法
公开(公告)号：US20100105203A1
公开(公告)日：2010-04-29
申请号：US12257143
申请日：2008-10-23
申请人： XINYU FU , Arvind Sundarrajan
发明人： XINYU FU , Arvind Sundarrajan
IPC分类号： H01L21/4763
CPC分类号： H01L21/76873 , H01L21/2855 , H01L21/76846 , H01L23/53238 , H01L2924/0002 , H01L2924/00
摘要： Methods of processing a substrate are provided herein. In some embodiments, a method of processing a substrate may include providing a substrate to a process chamber comprising a dielectric layer having a feature formed therein. A barrier layer may be formed within the feature. A coating of a first conductive material may be formed atop the barrier layer. A seed layer of the first conductive material may be formed atop the coating. The feature may be filled with a second conductive material. In some embodiments, the seed layer may be formed while maintaining the substrate at a temperature of greater than about 40 degrees Celsius.
摘要翻译：本文提供了处理基板的方法。在一些实施例中，处理衬底的方法可以包括向包括其中形成有特征的电介质层的处理室提供衬底。可以在特征内形成阻挡层。可以在阻挡层顶上形成第一导电材料的涂层。第一导电材料的籽晶层可以形成在涂层顶上。该特征可以用第二导电材料填充。在一些实施例中，种子层可以在保持基底的温度高于约40摄氏度的同时形成。

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