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1. 发明授权

US5200605A Optically functional device with integral resistance layer 失效
标题翻译：具有积分电阻层的光功能器件
公开(公告)号：US5200605A
公开(公告)日：1993-04-06
申请号：US834210
申请日：1992-02-12
申请人： Shiro Satoh , Yasuhiro Osawa
发明人： Shiro Satoh , Yasuhiro Osawa
IPC分类号： H01L31/12 , H01J31/50 , H01L31/14
CPC分类号： H01J31/50
摘要： An optically functional device has a semiconductor substrate, a light receiving portion disposed on the semiconductor substrate for receiving input light, a light emitting portion disposed on the light receiving portion for emitting output light, a window disposed above the light emitting portion, through which input light and output light pass and a resistance layer made of a semiconductor for functioning as load resistance. The resistance layer is disposed at least in either place between the semiconductor substrate and the light receiving portion, or between the light receiving portion and the light emitting portion, or on the light emitting portion. The light emitting portion has a light emitting layer made of semiconductor material having an energy of forbidden band width of more than the energy of a main peak of input light. The light receiving portion has a base and a collector each of which is made of a semiconductor material having an energy of forbidden band width equal to or less than the energy of a main peak of input light. The light emitting portion is adapted to feed back a part of the output light to the light receiving portion. Thereby a nonlinear output response to input light is performed based on the feedback effect of the output light absorbed by the light receiving portion.
摘要翻译：光学功能器件具有半导体衬底，设置在半导体衬底上用于接收输入光的光接收部分，设置在光接收部分上用于发射输出光的发光部分，设置在发光部分上方的窗口，输入端光和输出光通过以及用作负载电阻的半导体制成的电阻层。电阻层至少设置在半导体基板和光接收部分之间，或者在光接收部分和发光部分之间，或发光部分上。发光部分具有由具有比输入光的主峰的能量大的禁带宽度的能量的半导体材料制成的发光层。光接收部分具有基极和集电极，每个基极和集电极由具有等于或小于输入光的主峰的能量的禁带宽度的能量的半导体材料制成。发光部分适于将一部分输出光反射到光接收部分。由此，基于由光接收部吸收的输出光的反馈效果，对输入光进行非线性输出响应。

2. 发明授权

US5428227A Semiconductor light emitting element 失效
标题翻译：半导体发光元件
公开(公告)号：US5428227A
公开(公告)日：1995-06-27
申请号：US213575
申请日：1994-03-16
申请人： Shiro Satoh
发明人： Shiro Satoh
IPC分类号： H01L33/14 , H01L33/20 , H01L33/28 , H01L33/30 , H01L33/40 , H01L33/58 , H01S3/00 , H01S5/00 , H01S5/022 , H01S5/10 , H01L29/41 , H01L33/00 , H01S3/19
CPC分类号： H01L33/20 , H01S5/0267
摘要： A semiconductor light emitting element has a semiconductor laminating structure formed on a semiconductor substrate and having a junction portion formed in parallel with a semiconductor substrate face; a light generating portion formed in the vicinity of the junction portion such that an electric current can be injected into the light generating portion; a light emitting end face approximately perpendicular to the junction portion and approximately having an arc or hyperbolic shape in a direction parallel to the semiconductor substrate face; and an electrode for electric current injection formed in an upper portion of the semiconductor laminating structure and arranged in a position separated from at least a center of curvature of the arc light emitting end face. The semiconductor light emitting element has a shape of the light emitting portion and a layer structure capable of controlling a radiant angle of light. Since the light emitting end face is formed in an arc shape, a full angle at half maximum of emitted light in a horizontal direction with respect to the substrate face can be reduced in comparison with a case in which the light emitting end face has a linear shape. Optical coupling efficiency with respect to an optical fiber and a lens system can be improved.
摘要翻译：半导体发光元件具有形成在半导体衬底上并具有与半导体衬底面平行形成的接合部的半导体层叠结构; 形成在所述接合部附近的发光部，使得能够将电流注入到所述发光部中; 近似垂直于接合部分的发光端面，并且在平行于半导体衬底面的方向上大致具有弧形或双曲线形状; 以及形成在半导体层叠结构的上部并且布置在与至少弧形发光端面的曲率中心分开的位置的电流注入用电极。半导体发光元件具有能够控制光的辐射角的发光部的形状和层结构。由于发光端面形成为弧形，与发光端面具有直线状的情况相比，可以减少相对于基板面在水平方向上的发射光的最大半角的全角度形状。可以提高相对于光纤和透镜系统的光耦合效率。

3. 发明授权

US5264849A Optical A/D conversion using asymmetrical-neural-networks 失效
标题翻译：使用非对称神经网络的光学A / D转换
公开(公告)号：US5264849A
公开(公告)日：1993-11-23
申请号：US917330
申请日：1992-07-23
申请人： Hiroshi Kondoh , Shiro Satoh
发明人： Hiroshi Kondoh , Shiro Satoh
IPC分类号： G02F7/00 , H03M1/40 , H03M1/22
CPC分类号： G02F7/00 , H03M1/40
摘要： An analog signal having a value A is converted into an n-bit digital signal. An optical calculation part performs a part of a calculation shown below for an A/D conversion as below.U.sub.i =[{{.SIGMA.(W.sub.ij .times.X.sub.j)+h.sub.i }.times.V}+A].times.Si . . . (1)The calculation of the equation (1) is performed fori=0, 1, . . . , n-1 respectively;the W.sub.ij is 0 if i.gtoreq.j.gtoreq.0, or -(2**j) if j>i.gtoreq.0; hi is -(2**i), or -{(2**i)-.epsilon.}(.vertline..epsilon..vertline..ltoreq.1);V and S.sub.i respectively have any desired positive values and the said .SIGMA. represents a summation of each expression following thereto for j=0, 1, . . . , n-1. The thresholding compares the result U.sub.i of the calculation of each equation (1) to a threshold value, and then 1 or 0 is selected. The result of the selection is then assigned to X.sub.i. The calculation of the equation (1) is then performed repeatedly until X.sub.i converge on solutions. The solution of each X.sub.i is then provided as digital values of the n-bit digital signal.
摘要翻译：具有值A的模拟信号被转换成n位数字信号。光学计算部分执行如下所示的用于A / D转换的计算的一部分，如下。 Ui = [{{SIGMA（WijxXj）+ hi} xV} + A] xSi。。（1）对于i = 0,1，...进行等式（1）的计算。。。，n-1; 如果i> / = j> / = 0，则Wij为0，或者如果j> i> / = 0则为 - （2 ** j）嗨是 - （2 ** i），或 - （（2 ** i） - ε）（|ε| | = 1）; V和Si分别具有任何期望的正值，并且所述SIGMA表示对于j = 0,1，之后的每个表达式的和。。。，n-1。阈值将每个等式（1）的计算结果Ui与阈值进行比较，然后选择1或0。然后将选择的结果分配给Xi。然后重复执行等式（1）的计算，直到Xi收敛于解。然后，将每个Xi的解决方案提供为n位数字信号的数字值。

4. 发明授权

US5157987A Tie rod device 失效
标题翻译：拉杆装置
公开(公告)号：US5157987A
公开(公告)日：1992-10-27
申请号：US449241
申请日：1989-12-07
申请人： Shiro Satoh , Takashi Takeuchi , Koji Shibuya , Tetsuya Kogo
发明人： Shiro Satoh , Takashi Takeuchi , Koji Shibuya , Tetsuya Kogo
IPC分类号： B62D7/22 , G05G25/00
CPC分类号： G05G25/00 , B62D7/22 , Y10T74/2142 , Y10T74/2144 , Y10T74/2147
摘要： A tie rod device includes a vibration-absorbing damper. The tie rod comprises a tie rod assembly comprising first and second rods for interconnecting a rack shaft and a knuckle. The vibration-absorbing damper is interposed between the first and second rods for absorbing vibration transmitted from the knuckle.
摘要翻译：拉杆装置包括减振阻尼器。拉杆包括拉杆组件，其包括用于互连齿条轴和转向节的第一和第二杆。减震阻尼器介于第一和第二杆之间，用于吸收从转向节传递的振动。

5. 发明授权

US5117477A Optical functioning element using a transparent substrate with matching lattice constant 失效
标题翻译：光学功能元件使用具有匹配晶格常数的透明衬底
公开(公告)号：US5117477A
公开(公告)日：1992-05-26
申请号：US645694
申请日：1991-01-25
申请人： Shiro Satoh
发明人： Shiro Satoh
IPC分类号： G02F1/35 , G02F3/00 , H01L27/15 , H01L31/12 , H01L33/06 , H01L33/10 , H01L33/28 , H01L33/30 , H01L33/40 , H01S5/02 , H01S5/183 , H01S5/50
CPC分类号： H01L33/0066 , H01L31/125 , H01S5/0213 , H01S5/183 , H01S5/5045
摘要： An optical functioning element comprising: an optical functional element having a layer-stacked structure including a crystalline substance layer; a substrate for mounting the optical functional element; and an epitaxial growth layer of the crystalline substance formed between the optical functional element and the substrate. The substrate becomes transparent with respect to the light accessible to the optical functional element so that it becomes possible to optically access the functional element from both sides of the substrate without partly removing the substrate for passing through the light.
摘要翻译：一种光学功能元件，包括：光学功能元件，其具有包括结晶物质层的层叠结构; 用于安装光学功能元件的基板; 以及在所述光学功能元件和所述基板之间形成的所述结晶物质的外延生长层。相对于光学功能元件可接近的光，基板变得透明，使得可以从基板的两侧光学地访问功能元件，而不用部分地去除用于穿过光的基板。

6. 发明授权

US5093697A Semiconductor light emitting element 失效
标题翻译：半导体发光元件
公开(公告)号：US5093697A
公开(公告)日：1992-03-03
申请号：US603562
申请日：1990-10-26
申请人： Shiro Satoh
发明人： Shiro Satoh
IPC分类号： B41J2/44 , B41J2/45 , B41J2/455 , H01L27/15 , H01L33/08 , H01L33/14 , H01L33/28 , H01L33/30 , H01L33/38 , H01L33/40 , H01S5/00 , H01S5/02 , H01S5/026 , H01S5/042 , H01S5/40
CPC分类号： H01S5/4031 , H01L27/153 , H01L33/0025 , H01S5/0208 , H01S5/0425
摘要： A semiconductor light emitting element that includes a substrate having an upper surface, a multi-layered semiconductor stacked structure formed on the upper surface of the substrate. The multi-layered stacked structure emits light when a current is applied and passes through the structure. The element further includes a first electrode disposed on the multi-layered stacked structure and a second electrode disposed aside the multi-layered stacked structure on the upper surface of the substrate. The second electrode constitutes a counter electrode for the first electrode.
摘要翻译：一种半导体发光元件，其包括具有上表面的基板，形成在所述基板的上表面上的多层半导体堆叠结构。当施加电流并且通过结构时，多层堆叠结构发光。元件还包括设置在多层堆叠结构上的第一电极和在多层叠层结构上放置在基板上表面上的第二电极。第二电极构成第一电极的对电极。

7. 发明授权

US4990972A Semiconductor light emitting device 失效
标题翻译：半导体发光器件
公开(公告)号：US4990972A
公开(公告)日：1991-02-05
申请号：US404868
申请日：1989-09-08
申请人： Shiro Satoh , Noriaki Onodera
发明人： Shiro Satoh , Noriaki Onodera
IPC分类号： H01L27/15 , H01L33/08 , H01L33/10 , H01L33/14 , H01L33/16 , H01L33/28 , H01L33/32 , H01L33/38 , H01L33/40 , H01S5/00 , H01S5/183 , H01S5/323 , H01S5/42
CPC分类号： H01L33/38 , H01L27/153 , H01L33/0062 , H01L33/0079 , H01L33/0083 , H01L33/20 , H01S5/18338 , H01S5/423 , H01L33/40 , H01S5/3202
摘要： A semiconductor light emitting device comprises a semiconductor substrate of a first conductivity type; an electric current blocking layer formed on one main face of the substrate and including a semiconductor of a second conductivity type opposite to the first conductivity type and having an opening reaching the main face; a first semiconductor layer of the first conductivity type formed on the electric current blocking layer and a portion of the main face on which the opening is disposed; a second semiconductor layer stacked on the first semiconductor layer and forming a hetero-junction together with the first semiconductor layer; a semiconductor layer for electrode of the second conductivity type formed on the second semiconductor layer and having a window reaching the second conductor layer in a position corresponding to the opening; a first electrode metallic layer formed on the electrode semiconductor layer except for the window; and a second electrode metallic layer formed on the other main face of the substrate. The window has a flat shape composed of a substantially circular or rectangular shape and has a size substantially less than the size of the opening. Portions of the first and second semiconductor layers corresponding to the opening function as a light emitting region by flowing an electric current between the first and second electrode metallic layers, and a light generated from the light emitting region is outputted through the window in a direction substantially perpendicular to the substrate.
摘要翻译：半导体发光器件包括第一导电类型的半导体衬底; 形成在所述基板的一个主面上并具有与所述第一导电类型相反的第二导电类型的半导体并且具有到达所述主面的开口的电流阻挡层; 形成在电流阻挡层上的第一导电类型的第一半导体层和设置开口的主面的一部分; 堆叠在第一半导体层上并与第一半导体层一起形成异质结的第二半导体层; 第二导电类型的电极用半导体层形成在第二半导体层上，并具有在对应于该开口的位置到达第二导体层的窗口; 形成在除了窗口之外的电极半导体层上的第一电极金属层; 以及形成在所述基板的另一个主面上的第二电极金属层。该窗具有由大致圆形或矩形形状构成的平坦形状，其尺寸基本上小于开口尺寸。通过在第一和第二电极金属层之间流动电流，并且从发光区域产生的光，通过窗口输出对应于作为发光区域的开启功能的第一和第二半导体层的部分，基本上垂直于衬底。

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