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    • 3. 发明授权
    • Photoresist composition and patterning method thereof
    • 光刻胶组合物及其图案化方法
    • US08211614B2
    • 2012-07-03
    • US12376107
    • 2007-08-02
    • Shi-Jin SungSang-Haeng LeeSang-Tae Kim
    • Shi-Jin SungSang-Haeng LeeSang-Tae Kim
    • G03F7/004G03F7/30
    • G03F7/0236
    • Disclosed is a resist composition which has desirable physical properties such as sensitivity, resolution, residual film ratio and coating property, and forms a pattern having the desirable profile and depth of focus due to excellent light transmissivity during a semiconductor process and a flat panel display process using a short wavelength of 248 nm (KrF) or less, even though the resist composition is applied to a non-chemically amplified resist. The photoresist composition comprises a novolac-based resin A, a photosensitizer B, and a low molecular substance C having low absorbance. The low molecular substance having low absorbance has absorbance that is lower than absorbance of the novolac-based resin at one or more wavelengths of 248 nm, 193 nm, and 157 nm, and the photoresist composition is used at the wavelength of 248 nm or less.
    • 公开了具有理想的物理性质如光敏度,分辨率,残留膜比和涂布性能的抗蚀剂组合物,并且由于在半导体工艺和平板显示过程中由于优异的透光率而形成具有期望的轮廓和深度聚焦的图案 使用248nm(KrF)的短波长,即使将抗蚀剂组合物施加到非化学放大抗蚀剂上。 光致抗蚀剂组合物包含酚醛清漆基树脂A,光敏剂B和低吸光度的低分子物质C. 具有低吸光度的低分子物质的吸光度低于在248nm,193nm和157nm的一个或多个波长处的酚醛清漆基树脂的吸光度,并且光致抗蚀剂组合物在248nm或更小的波长下使用 。
    • 4. 发明授权
    • Method for forming electrode for plasma display panel
    • 用于形成等离子体显示面板用电极的方法
    • US06276980B1
    • 2001-08-21
    • US09365879
    • 1999-08-03
    • Sang-Tae Kim
    • Sang-Tae Kim
    • H01J902
    • H01J11/24H01J9/02H01J2211/225H01J2211/444
    • The present invention relates to a discharge sustaining electrode formed of a transparent electrode and a non-transparent electrode for a plasma display panel (PDP), and it is an object of the present invention to provide a method for an electrode which is well applicable to forming a non-transparent electrode using an Ag material and providing a good productivity and a certain contrast characteristic. The method for forming a bus electrode according to the present invention includes a first step for coating Ag paste including some black powder having different specific gravity particles and some Ag white powder on the transparent electrode, a second step for level-separating the black and white powders contained in the coated Ag paste based on a specific gravity difference for a certain time, and a third step for burning out a binder from the coated Ag paste to thereby implementing a firing process. Therefore, it is possible to implement a two-tier bus electrode structure based on one time paste printing operation to thereby decrease a formation process of an electrode.
    • 本发明涉及一种由透明电极和等离子体显示面板(PDP)的不透明电极形成的放电维持电极,其目的在于提供一种电极方法,其适用于 使用Ag材料形成非透明电极并提供良好的生产率和一定的对比度特性。 根据本发明的形成总线电极的方法包括:在透明电极上涂覆包括具有不同比重颗粒的一些黑色粉末和一些Ag白色粉末的Ag浆料的第一步骤,用于将黑色和白色水平分离的第二步骤 基于特定时间的比重差包含在涂布的Ag糊料中的粉末,以及从涂覆的Ag糊料烧结粘合剂从而实现烧制过程的第三步骤。 因此,可以实现基于一次浆料印刷操作的双层总线电极结构,从而减少电极的形成过程。
    • 9. 发明申请
    • PHOTORESIST COMPOSITION AND PATTERNING METHOD THEREOF
    • 光电组合物及其方法
    • US20100203444A1
    • 2010-08-12
    • US12376107
    • 2007-08-02
    • Shi-Jin SungSang-Haeng LeeSang-Tae Kim
    • Shi-Jin SungSang-Haeng LeeSang-Tae Kim
    • G03F7/20G03F7/004
    • G03F7/0236
    • Disclosed is a resist composition which has desirable physical properties such as sensitivity, resolution, residual film ratio and coating property, and forms a pattern having the desirable profile and depth of focus due to excellent light transmissivity during a semiconductor process and a flat panel display process using a short wavelength of 248 nm (KrF) or less, even though the resist composition is applied to a non-chemically amplified resist. The photoresist composition comprises a novolac-based resin A, a photosensitizer B, and a low molecular substance C having low absorbance. The low molecular substance having low absorbance has absorbance that is lower than absorbance of the novolac-based resin at one or more wavelengths of 248 nm, 193 nm, and 157 nm, and the photoresist composition is used at the wavelength of 248 nm or less.
    • 公开了具有理想的物理性质如光敏度,分辨率,残留膜比和涂布性能的抗蚀剂组合物,并且由于在半导体工艺和平板显示过程中由于优异的透光率而形成具有期望的轮廓和深度聚焦的图案 使用248nm(KrF)的短波长,即使将抗蚀剂组合物施加到非化学放大抗蚀剂上。 光致抗蚀剂组合物包含酚醛清漆基树脂A,光敏剂B和低吸光度的低分子物质C. 具有低吸光度的低分子物质的吸光度低于在248nm,193nm和157nm的一个或多个波长处的酚醛清漆基树脂的吸光度,并且光致抗蚀剂组合物在248nm或更小的波长下使用 。