专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明申请

US20040135261A1 Interconnections having double capping layer and method for forming the same 有权
标题翻译：具有双层覆盖层的互连及其形成方法
公开(公告)号：US20040135261A1
公开(公告)日：2004-07-15
申请号：US10744277
申请日：2003-12-23
申请人： Samsung Electronics Co., Ltd.
发明人： Kyoung-woo Lee , Soo-geun Lee , Ki-chul Park , Won-sang Song
IPC分类号： H01L023/48
CPC分类号： H01L21/76832 , H01L21/76807 , H01L21/76834 , H01L21/76843 , H01L21/76873 , H01L21/76874 , H01L21/76877 , H01L21/76883 , H01L23/53228 , H01L23/53238 , H01L23/53295 , H01L2924/0002 , H01L2924/00
摘要： Provided are an interconnection of a semiconductor device which includes a capping layer and a method for forming the interconnection. The interconnection of the semiconductor device is a copper damascene interconnection where the capping layer is formed as a dual layer of a silicon nitride layer and silicon carbide layer on a copper layer processed by chemical mechanical polishing (CMP). Therefore, it is possible to maintain a high etching selectivity and a low dielectric constant of the silicon carbide layer while providing superior leakage suppression.
摘要翻译：提供了包括封盖层和形成互连的方法的半导体器件的互连。半导体器件的互连是铜镶嵌互连，其中覆盖层形成为通过化学机械抛光（CMP）处理的铜层上的氮化硅层和碳化硅层的双层。因此，可以在提供优异的泄漏抑制的同时保持碳化硅层的高蚀刻选择性和低介电常数。

2. 发明申请

US20040217013A1 Apparatus and method for electropolishing a metal wiring layer on a semiconductor device 审中-公开
标题翻译：在半导体器件上电镀金属布线层的装置和方法
公开(公告)号：US20040217013A1
公开(公告)日：2004-11-04
申请号：US10814381
申请日：2004-03-31
申请人： Samsung Electronics Co., Ltd.
发明人： Sun-jung Lee , Ki-chul Park
IPC分类号： H01L021/66 , C25F003/00 , B23H003/00
CPC分类号： H01L21/7684 , B23H3/00 , B23H5/08 , B23H9/00 , C25F3/02 , C25F7/00 , H01L21/32125
摘要： The present invention relates to an apparatus and method for electropolishing a metal wire layer on a semiconductor device. To electropolish the metal wiring layer, a wafer is dipped into an electrolyte solution, and positive and negative voltages are applied to the wafer and electrodes, respectively. The electrodes include a main electrode and a plurality of auxiliary electrodes disposed above the main electrode. In a preferred embodiment, the plurality of auxiliary electrodes are mesh-type electrodes and are annular in shape and concentrically disposed, and thus the electrolyte solution can readily flow between them. Further, the metal wiring layer is preferably sequentially electropolished outwardly from the center of the wafer by sequentially applying negative voltages to the plurality of annular auxiliary electrodes. In this manner, a uniform electropolishing process is performed.
摘要翻译：本发明涉及一种在半导体器件上对金属线层进行电解抛光的装置和方法。为了对金属布线层进行电解抛光，将晶片浸入电解质溶液中，并且将正和负电压分别施加到晶片和电极。电极包括主电极和设置在主电极上方的多个辅助电极。在一个优选实施例中，多个辅助电极是网状电极，并且是环形的并且同心设置，因此电解质溶液可以容易地在它们之间流动。此外，金属布线层优选通过依次向多个环形辅助电极施加负电压而从晶片的中心向外电镀抛光。以这种方式，进行均匀的电抛光处理。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式