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1. 发明授权

US06921892B2 Electrostatic imager 有权
标题翻译：静电成像仪
公开(公告)号：US06921892B2
公开(公告)日：2005-07-26
申请号：US10325809
申请日：2002-12-18
申请人： Richard Colbeth , George Zentai , Shuji Yamaoka
发明人： Richard Colbeth , George Zentai , Shuji Yamaoka
IPC分类号： G02F1/13 , G02F1/1333 , G03G20060101 , G03G5/00 , G03G5/02 , H01L27/00 , H01L27/146 , H01L31/00
CPC分类号： H01L27/14679 , G03G5/00 , G03G5/0202
摘要： An apparatus and method for detecting an electrostatic charge on a flat panel imager pixel array. In one embodiment, the apparatus includes an insulator layer and a flat panel pixel array coupled to a bottom surface of the insulator layer. Each pixel of the pixel array has a storage capacitance, and an electrostatic charge corresponding to a voltage applied through an electrode coupled to a top surface of the insulating layer may be detected from each storage capacitance.
摘要翻译：一种用于检测平板成像器像素阵列上的静电电荷的装置和方法。在一个实施例中，该装置包括耦合到绝缘体层的底表面的绝缘体层和平板像素阵列。像素阵列的每个像素具有存储电容，并且可以从每个存储电容检测对应于通过耦合到绝缘层的顶表面的电极施加的电压的静电电荷。

2. 发明授权

US06486808B1 Data signal amplifier with automatically controllable dynamic signal range 有权
标题翻译：数据信号放大器可自动控制动态信号范围
公开(公告)号：US06486808B1
公开(公告)日：2002-11-26
申请号：US09978727
申请日：2001-10-16
申请人： Edward Seppi , Edward Shapiro , George Zentai , Richard Colbeth
发明人： Edward Seppi , Edward Shapiro , George Zentai , Richard Colbeth
IPC分类号： H03M184
CPC分类号： H03M1/129 , H03M1/18 , H04N5/235 , H04N5/243 , H04N5/32
摘要： A preamplifier stage with dynamically controllable signal gain in a data signal processing circuit that includes a downstream analog-to-digital signal converter. The level of the data signal subsequent to its preamplification is monitored and the gain of the preamplifier stage is dynamically adjusted in response to such data signal transcending one or more predetermined thresholds. Hence, the effective dynamic range of the preamplifier stage is extended, thereby also effectively extending the dynamic range of the overall system beyond that to which it would have otherwise been limited by the dynamic range of the analog-to-digital signal converter. In accordance with a preferred embodiment of the invention, such a preamplifier is used in an X-ray imaging system such as that using flat panel solid state imaging devices.
摘要翻译：一种在包括下游模拟 - 数字信号转换器的数据信号处理电路中具有动态可控的信号增益的前置放大器级。监视其预放大之后的数据信号的电平，并响应于超过一个或多个预定阈值的这种数据信号来动态调整前置放大器级的增益。因此，前置放大器级的有效动态范围被扩展，从而也有效地扩展了整个系统的动态范围，超出了其将被模拟 - 数字信号转换器的动态范围所限制的范围。根据本发明的优选实施例，这种前置放大器用于诸如使用平板固态成像装置的X射线成像系统中。

3. 发明申请

US20050092925A1 Process to reduce the dark current in semiconducting films 失效
标题翻译：减少半导体薄膜中的暗电流的过程
公开(公告)号：US20050092925A1
公开(公告)日：2005-05-05
申请号：US10701724
申请日：2003-11-04
申请人： George Zentai , Larry Partain , Raisa Pavlyunchkova , Kanai Shah , Paul Bennett
发明人： George Zentai , Larry Partain , Raisa Pavlyunchkova , Kanai Shah , Paul Bennett
IPC分类号： G01J5/20 , H01L21/00 , H01L21/36 , H01L21/368 , H01L27/14 , H01L31/00 , H01L31/115 , H01L31/18
CPC分类号： H01L31/18 , H01L21/02521 , H01L21/02601 , H01L21/02628 , H01L31/115
摘要： A method of coating the joined crystals within a semiconductor conversion layer to reduce the dark current without compromising the sensitivity of the conversion layer is presented. A semiconductor conversion layer comprising a plurality of joined crystals and permeated by a polymer material and having microscopic voids is also presented.
摘要翻译：提出了在半导体转换层内涂覆结合的晶体以减少暗电流而不损害转换层的灵敏度的方法。还提供了包含多个接合晶体并且被聚合物材料渗透并具有微小空隙的半导体转换层。

4. 发明申请

US20050056829A1 Reducing dark current of photoconductor using heterojunction that maintains high x-ray sensitivity 审中-公开
标题翻译：使用保持高X射线灵敏度的异质结降低光电导体的暗电流
公开(公告)号：US20050056829A1
公开(公告)日：2005-03-17
申请号：US10665298
申请日：2003-09-17
申请人： Michael Green , Steve Bandy , George Zentai , Larry Partain
发明人： Michael Green , Steve Bandy , George Zentai , Larry Partain
IPC分类号： H01L20060101 , H01L29/08 , H01L31/115
CPC分类号： H01L31/115
摘要： A photodetector having a heterojunction structure is described that may operate to reduce contact corrosion and/or reduce dark current while maintaining high x-ray sensitivity. The heterojunction structure may be formed by a plurality of halide semiconductor materials.
摘要翻译：描述了具有异质结结构的光电检测器，其可以在保持高的x射线灵敏度的同时降低接触腐蚀和/或降低暗电流。异质结结构可以由多个卤化物半导体材料形成。

5. 发明授权

US07884438B2 Megavoltage imaging with a photoconductor based sensor 有权
标题翻译：用基于感光体的传感器进行Megavoltage成像
公开(公告)号：US07884438B2
公开(公告)日：2011-02-08
申请号：US11193162
申请日：2005-07-29
申请人： Larry Dean Partain , George Zentai
发明人： Larry Dean Partain , George Zentai
IPC分类号： H01L27/146
CPC分类号： G01T1/24
摘要： A photodetector for detecting megavoltage (MV) radiation comprises a semiconductor conversion layer having a first surface and a second surface disposed opposite the first surface, a first electrode coupled to the first surface, a second electrode coupled to the second surface, and a low density substrate including a detector array coupled to the second electrode opposite the semiconductor conversion layer. The photodetector includes a sufficient thickness of a high density material to create a sufficient number of photoelectrons from incident MV radiation, so that the photoelectrons can be received by the conversion layer and converted to a sufficient of recharge carriers for detection by the detector array.
摘要翻译：用于检测兆伏特（MV）辐射的光电检测器包括半导体转换层，其具有与第一表面相对布置的第一表面和第二表面，耦合到第一表面的第一电极，耦合到第二表面的第二电极和低密度衬底，包括耦合到与半导体转换层相对的第二电极的检测器阵列。光电检测器包括足够厚度的高密度材料以从入射的MV辐射产生足够数量的光电子，使得光电子能够被转换层接收并转换成足够的再充电载体，以便由检测器阵列检测。

6. 发明申请

US20060278832A1 Photoconductor imagers with sandwich structure 失效
标题翻译：具有夹层结构的感光体成像器
公开(公告)号：US20060278832A1
公开(公告)日：2006-12-14
申请号：US11153017
申请日：2005-06-14
申请人： George Zentai , Larry Partain
发明人： George Zentai , Larry Partain
IPC分类号： G01T1/24
CPC分类号： G01T1/24 , H01L27/14634 , H01L27/14676 , H01L27/1469
摘要： An image acquisition device 30 is provided. The image acquisition device 30 comprises a photoconductor 48 adapted to convert an electromagnetic radiation into electrical signals, a first layer 36 or 37 coupled to the photoconductor 48. The interconnecting layer 36 or 37 comprises an insulator 54 and a plurality of conductors 56 or 57 embedded in the insulator 54 adapted to conduct the electrical signals. A method of making an image acquisition device 30 is also provided.
摘要翻译：提供图像采集装置30。图像采集装置30包括适于将电磁辐射转换成电信号的光电导体48，耦合到光电导体48的第一层36或37.互连层36或37包括绝缘体54和嵌入的多个导体56或57 在适于传导电信号的绝缘体54中。还提供了一种制作图像采集装置30的方法。

7. 发明授权

US07054410B2 Multi energy x-ray imager 失效
标题翻译：多能量X射线成像仪
公开(公告)号：US07054410B2
公开(公告)日：2006-05-30
申请号：US10439350
申请日：2003-05-15
申请人： George Zentai , Larry Partain
发明人： George Zentai , Larry Partain
IPC分类号： G01N23/00
CPC分类号： A61B6/482 , A61B6/00 , A61B6/4216
摘要： An X-ray image acquisition apparatus includes a panel having a first electrode, a second electrode, and a photoconductor secured between said first and second electrodes. The photoconductor has a thickness configured to absorb X-ray radiation at a high energy level. The first and second electrodes are configured to create an electric field for transporting charges created in the photoconductor to a pixel unit, thereby allowing charges to be efficiently collected when low or high energy X-ray radiation is used.
摘要翻译： X射线图像获取装置包括具有第一电极，第二电极和固定在所述第一和第二电极之间的光电导体的面板。光电导体具有被配置为在高能级吸收X射线辐射的厚度。第一和第二电极被配置成产生用于将在光电导体中产生的电荷传送到像素单元的电场，从而当使用低能量或高能量X射线辐射时可以有效地收集电荷。

8. 发明申请

US20110079729A1 MEGAVOLTAGE IMAGING WITH A PHOTOCONDUCTOR BASED SENSOR 审中-公开
标题翻译：基于光电晶体的传感器进行成像
公开(公告)号：US20110079729A1
公开(公告)日：2011-04-07
申请号：US12965579
申请日：2010-12-10
申请人： Larry Dean Partain , George Zentai
发明人： Larry Dean Partain , George Zentai
IPC分类号： G01T1/24 , H01L31/115
CPC分类号： G01T1/24
摘要： A photodetector for detecting megavoltage (MV) radiation comprises a semiconductor conversion layer having a first surface and a second surface disposed opposite the first surface, a first electrode coupled to the first surface, a second electrode coupled to the second surface, and a low density substrate including a detector array coupled to the second electrode opposite the semiconductor conversion layer. The photodetector includes a sufficient thickness of a high density material to create a sufficient number of photoelectrons from incident MV radiation, so that the photoelectrons can be received by the conversion layer and converted to a sufficient of recharge carriers for detection by the detector array.
摘要翻译：用于检测兆伏特（MV）辐射的光电检测器包括半导体转换层，其具有与第一表面相对布置的第一表面和第二表面，耦合到第一表面的第一电极，耦合到第二表面的第二电极和低密度衬底，包括耦合到与半导体转换层相对的第二电极的检测器阵列。光电检测器包括足够厚度的高密度材料以从入射的MV辐射产生足够数量的光电子，使得光电子能够被转换层接收并转换成足够的再充电载体，以便由检测器阵列检测。

9. 发明授权

US07355385B2 Voltage injector and detector using pixel array for printed circuit board testing 有权
标题翻译：电压注入器和检测器使用像素阵列进行印刷电路板测试
公开(公告)号：US07355385B2
公开(公告)日：2008-04-08
申请号：US11192849
申请日：2005-07-28
申请人： George Zentai
发明人： George Zentai
IPC分类号： G01R31/26 , G01R31/02
CPC分类号： G01R31/2812
摘要： One embodiment includes an injector pixel array having injector pixels each coupled to the bottom surface of a conductive material having a directional electrical conductivity only in a direction corresponding to a path between the bottom surface and top surface of the conductive material. Each injector pixel includes a semiconductor based switch coupled to a charge or voltage driver to inject a charge or voltage into each injector pixel. Embodiments, also include a detector pixel array having detector pixels each coupled to the bottom surface of the directionally conductive material. Each detector pixel includes a semiconductor based switch coupled to a charge or voltage storage capacitor to detect a charge or voltage at each detector pixel.
摘要翻译：一个实施例包括具有喷射器像素的喷射器像素阵列，每个喷射器像素分别耦合到具有定向导电性的导电材料的底表面，仅在对应于导电材料的底表面和顶表面之间的路径的方向上。每个喷射器像素包括耦合到电荷或电压驱动器的基于半导体的开关，以将电荷或电压注入到每个注入器像素中。实施例还包括具有每个耦合到定向传导材料的底表面的检测器像素的检测器像素阵列。每个检测器像素包括耦合到电荷或电压存储电容器的基于半导体的开关，以检测每个检测器像素处的电荷或电压。

10. 发明申请

US20070023853A1 Megavoltage imaging with a photoconductor based sensor 有权
标题翻译：用基于感光体的传感器进行Megavoltage成像
公开(公告)号：US20070023853A1
公开(公告)日：2007-02-01
申请号：US11193162
申请日：2005-07-29
申请人： Larry Partain , George Zentai
发明人： Larry Partain , George Zentai
IPC分类号： H01L31/00
CPC分类号： G01T1/24
摘要： A photodetector for detecting megavoltage (MV) radiation comprises a semiconductor conversion layer having a first surface and a second surface disposed opposite the first surface, a first electrode coupled to the first surface, a second electrode coupled to the second surface, and a low density substrate including a detector array coupled to the second electrode opposite the semiconductor conversion layer. The photodetector includes a sufficient thickness of a high density material to create a sufficient number of photoelectrons from incident MV radiation, so that the photoelectrons can be received by the conversion layer and converted to a sufficient of recharge carriers for detection by the detector array.
摘要翻译：用于检测兆伏特（MV）辐射的光电检测器包括半导体转换层，其具有与第一表面相对布置的第一表面和第二表面，耦合到第一表面的第一电极，耦合到第二表面的第二电极和低密度衬底，包括耦合到与半导体转换层相对的第二电极的检测器阵列。光电检测器包括足够厚度的高密度材料以从入射的MV辐射产生足够数量的光电子，使得光电子能够被转换层接收并转换成足够的再充电载体，以便由检测器阵列检测。

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