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1. 发明授权

US5453306A Process for depositing oxide film on metallic substrate by heat plasma flash evaporation method 失效
标题翻译：通过热等离子体闪蒸法在金属基底上沉积氧化膜的方法
公开(公告)号：US5453306A
公开(公告)日：1995-09-26
申请号：US269178
申请日：1994-06-30
申请人： Noriyuki Tatsumi , Jiro Tsujino , Atsushi Kume , Yuh Shiohara , Shoji Tanaka , Shigenori Yuhya , Kei Kikuchi
发明人： Noriyuki Tatsumi , Jiro Tsujino , Atsushi Kume , Yuh Shiohara , Shoji Tanaka , Shigenori Yuhya , Kei Kikuchi
IPC分类号： B01J19/08 , C01B13/14 , C01G1/00 , C01G3/00 , C23C4/02 , C23C4/10 , C30B29/22 , H01B12/00 , H01B12/06 , H01B13/00 , H01L39/24 , B05D3/06
CPC分类号： H01L39/2445 , C23C4/02 , C23C4/11 , Y10S505/741 , Y10S505/819
摘要： The generation of a reaction product is suppressed between a metallic substrate and plasma in depositing a ceramic intermediate layer on the metallic substrate in a process for depositing an oxide film on the metallic substrate by thermal plasma flash evaporation method. Thus, there is no reaction phase in the ceramic intermediate layer and the metallic substrate, and an intermediated buffer layer of only oxide ceramic is deposited on a flat surface of the metallic substrate. The intermediate ceramic layer is deposited in inert atmosphere of a low oxygen concentration at a temperature of less than 600.degree. C. for the metallic substrate. Then, a superconducting thin film is deposited on the ceramic intermediate layer.
摘要翻译：在通过热等离子体闪蒸法在金属基板上沉积氧化膜的工艺中，在金属基板上沉积陶瓷中间层时，在金属基板和等离子体之间抑制反应产物的产生。因此，在陶瓷中间层和金属基板中没有反应相，仅在氧化物陶瓷的中间缓冲层沉积在金属基板的平坦表面上。在低于600℃的低温浓度的惰性气氛中将中间陶瓷层沉积在金属基底上。然后，在陶瓷中间层上沉积超导薄膜。

2. 发明授权

US5627142A Method of producing composite metal oxide material 失效
标题翻译：复合金属氧化物材料的制造方法
公开(公告)号：US5627142A
公开(公告)日：1997-05-06
申请号：US279416
申请日：1994-07-25
申请人： Yasuji Yamada , Masaru Nakamura , Noriyuki Tatsumi , Jiro Tsujino , Kanshi Ohtsu , Yasuo Kanamori , Minoru Tagami , Atsushi Kume , Yuh Shiohara , Shoji Tanaka
发明人： Yasuji Yamada , Masaru Nakamura , Noriyuki Tatsumi , Jiro Tsujino , Kanshi Ohtsu , Yasuo Kanamori , Minoru Tagami , Atsushi Kume , Yuh Shiohara , Shoji Tanaka
IPC分类号： C30B19/12 , C04B35/45 , C30B15/00 , C30B25/02 , C30B29/22 , H01L39/24 , C30B15/02
CPC分类号： C30B29/225 , C04B35/4508 , C30B15/00 , H01L39/2422 , H01L39/2458 , Y10S428/93 , Y10S505/701 , Y10S505/704 , Y10S505/729 , Y10S505/733
摘要： A composite material is disclosed which includes a substrate, an oriented film provided on a surface of the substrate and formed of a crystal of a Y123 metal oxide of the formula LnBa.sub.2 Cu.sub.3 O.sub.y wherein Ln stands for Y or an element belonging to the lanthanoid and y is a number of 6-7, and a layer of a Y123 metal oxide of the formula LnBa.sub.2 Cu.sub.3 O.sub.y wherein Ln stands for Y or an element belonging to the lanthanoid and y is a number of 6-7 formed on the oriented film.
摘要翻译：公开了一种复合材料，其包括基板，设置在基板的表面上的取向膜，其由式LnBa2Cu3Oy的Y123金属氧化物的晶体形成，其中Ln表示Y或属于镧系元素，y表示 6-7的数量以及式LnBa2Cu3Oy的Y123金属氧化物层，其中Ln表示Y或属于镧系元素，y表示在取向膜上形成的数目6-7。

3. 发明授权

US5998050A Composite metal oxide material 失效
标题翻译：复合金属氧化物材料
公开(公告)号：US5998050A
公开(公告)日：1999-12-07
申请号：US769353
申请日：1996-12-19
申请人： Yasuji Yamada , Masaru Nakamura , Noriyuki Tatsumi , Jiro Tsujino , Kanshi Ohtsu , Yasuo Kanamori , Minoru Tagami , Atsushi Kume , Yuh Shiohara , Shoji Tanaka
发明人： Yasuji Yamada , Masaru Nakamura , Noriyuki Tatsumi , Jiro Tsujino , Kanshi Ohtsu , Yasuo Kanamori , Minoru Tagami , Atsushi Kume , Yuh Shiohara , Shoji Tanaka
IPC分类号： C30B19/12 , C04B35/45 , C30B15/00 , C30B25/02 , C30B29/22 , H01L39/24 , B32B18/00 , H01L39/00
CPC分类号： C30B29/225 , C04B35/4508 , C30B15/00 , H01L39/2422 , H01L39/2458 , Y10S428/93 , Y10S505/701 , Y10S505/704 , Y10S505/729 , Y10S505/733
摘要： A composite material is disclosed which includes a substrate, an oriented film provided on a surface of the substrate and formed of a crystal of a Y123 metal oxide of the formula LnBa.sub.2 Cu.sub.3 O.sub.y wherein Ln stands for Y or an element belonging to the lanthanoid and y is a number of 6-7, and a layer of a Y123 metal oxide of the formula LnBa.sub.2 Cu.sub.3 O.sub.y wherein Ln stands for Y or an element belonging to the lanthanoid and y is a number of 6-7 formed on the oriented film.
摘要翻译：公开了一种复合材料，其包括基板，设置在基板的表面上的取向膜，其由式LnBa2Cu3Oy的Y123金属氧化物的晶体形成，其中Ln表示Y或属于镧系元素，y表示 6-7的数量以及式LnBa2Cu3Oy的Y123金属氧化物层，其中Ln表示Y或属于镧系元素，y表示在取向膜上形成的数目6-7。

4. 发明授权

US5665682A Method of manufacturing an oxide superconductor with high critical current density 失效
标题翻译：具有高临界电流密度的氧化物超导体的制造方法
公开(公告)号：US5665682A
公开(公告)日：1997-09-09
申请号：US514731
申请日：1995-08-14
申请人： Osamu Okamura , Atsushi Kume , Yuh Shiohara
发明人： Osamu Okamura , Atsushi Kume , Yuh Shiohara
IPC分类号： C01G1/00 , C01G3/00 , H01B12/06 , H01B13/00 , H01L39/24 , B05D5/12 , B05D3/02
CPC分类号： H01L39/2483 , Y10S505/734
摘要： An oxide superconductor capable of realizing a high critical current density and its manufacturing method requiring only a low temperature heat treatment. An oxide superconductor has a superconductive layer with a composition of RE.sub.1 Ba.sub.2 Cu.sub.3 O.sub.7-x, where RE stands for any one of rare earth elements including Y, Eu, Gd, Dy, Ho, Er, and Yb, which is formed on the substrate by RE.sub.1 Ba.sub.2 Cu.sub.3 O.sub.7-x phase and CuO phase resulting from a decomposition of RE.sub.1 Ba.sub.2 Cu.sub.4 O.sub.8 phase, in which the CuO phase and micro-defects caused by the decomposition function as pinning centers. This superconductive layer is formed by applying a solution containing organic compounds of a plurality of metallic elements for constituting the oxide superconductive layer; calcining the substrate applied with the solution to obtain a calcined body in which the organic compounds contained in the solution are thermally decomposed; heating the calcined body to produce RE.sub.1 Ba.sub.2 Cu.sub.4 O.sub.8 phase; and decomposing the RE.sub.1 Ba.sub.2 Cu.sub.4 O.sub.8 phase into RE.sub.1 Ba.sub.2 Cu.sub.3 O.sub.7-x phase and CuO phase, to obtain the oxide superconductor.
摘要翻译：能够实现高临界电流密度的氧化物超导体及其仅需要低温热处理的制造方法。氧化物超导体具有具有RE1Ba2Cu3O7-x组成的超导层，其中RE代表包括Y，Eu，Gd，Dy，Ho，Er和Yb的稀土元素中的任何一种，其通过RE1Ba2Cu3O7- x相和CuO相由RE1Ba2Cu4O8相分解产生，其中CuO相和微分子缺陷引起的分解作用为钉扎中心。该超导层通过涂布含有用于构成氧化物超导层的多个金属元素的有机化合物的溶液而形成; 煅烧施加有溶液的基板以获得其中包含在溶液中的有机化合物热分解的煅烧体; 加热煅烧体产生RE1Ba2Cu4O8相; 并将RE1Ba2Cu4O8相分解成RE1Ba2Cu3O7-x相和CuO相，得到氧化物超导体。

5. 发明授权

US5632811A Method of retaining melt of oxide 失效
标题翻译：保留氧化物熔体的方法
公开(公告)号：US5632811A
公开(公告)日：1997-05-27
申请号：US420519
申请日：1995-04-12
申请人： Yasuo Namikawa , Yasuji Yamada , Satoshi Koyama , Yuh Shiohara , Shoji Tanaka
发明人： Yasuo Namikawa , Yasuji Yamada , Satoshi Koyama , Yuh Shiohara , Shoji Tanaka
IPC分类号： C30B9/00 , C30B15/00 , C30B15/12 , C30B29/22 , H01B13/00 , H01L21/208 , C30B29/16
CPC分类号： C30B29/225 , C30B15/12 , C30B9/00
摘要： In order to stably retain an oxide-based melt consisting essentially of yttrium or a lanthanoid element, barium, copper and oxygen at a prescribed temperature with no impurity contamination thereby preparing a large oxide crystal of high quality from the melt, an oxide melt consisting essentially of yttrium or a lanthanoid element, barium, copper and oxygen is stored in a first crucible, which in turn is held in a second crucible. The first crucible is made of a material which is an oxide of at least one element forming the melt having a melting point higher by at least 10.degree. C. than a melt retention temperature and causing no structural phase transition up to a temperature higher by 10.degree. C. than the aforementioned prescribed temperature, with solubility of not more than 5 atomic percent with respect to the melt in a temperature range from the room temperature to a temperature higher by 10.degree. C. than the melt retention temperature. The second crucible is made of a material substantially causing neither melting nor chemical reaction with respect to the oxide-based melt, which can retain the melt more stably than the first material. Even if the melt overflows the first crucible, this overflow is suppressed by the second crucible. It is possible to prepare a crystal of an oxide superconductor such as YBa.sub.2 Cu.sub.3 O.sub.7-x (0.ltoreq.X.ltoreq.1) by the pulling method from the melt which is stored in the first crucible.
摘要翻译：为了稳定地保持基本上由钇或镧系元素，钡，铜和氧组成的氧化物基熔体，在规定的温度下没有杂质污染，从而从熔体制备高质量的大的氧化物晶体，基本上由的钇或镧系元素，钡，铜和氧储存在第一坩埚中，第一坩埚又保持在第二坩埚中。第一坩埚由至少一种形成熔体的元素的氧化物的材料制成，其熔点比熔融保持温度高至少10℃，并且不会导致结构相变达到高于10℃的温度 ℃以上的规定温度，相对于熔体，在室温至高于熔融保持温度10℃的温度范围内的溶解度为5原子％以下。第二坩埚由相对于基于氧化物的熔体基本上不熔化和化学反应的材料制成，其可以比第一材料更稳定地保持熔体。即使熔体溢出第一坩埚，这种溢流被第二坩埚抑制。可以通过从存储在第一坩埚中的熔体的拉伸方法制备氧化物超导体的晶体，例如YBa2Cu3O7-x（0≤X1）。

6. 发明授权

US5536704A Composite material and method of preparing same 失效
标题翻译：复合材料及其制备方法
公开(公告)号：US5536704A
公开(公告)日：1996-07-16
申请号：US240067
申请日：1994-05-09
申请人： Yasuji Yamada , Minoru Tagami , Masaru Nakamura , Hideki Sakai , Koichi Uehara , Yuh Shiohara , Shoji Tanaka
发明人： Yasuji Yamada , Minoru Tagami , Masaru Nakamura , Hideki Sakai , Koichi Uehara , Yuh Shiohara , Shoji Tanaka
IPC分类号： C01G1/00 , C30B15/00 , C30B29/22 , H01L39/02 , H01L39/24 , C30B19/02
CPC分类号： C30B29/225 , C30B15/00 , H01L39/2461 , Y10S505/729
摘要： A composite material comprising a bulky substrate of a Y-series 123 metal oxide crystal, and at least one layer provided on a surface of the substrate and formed of a crystal of a Y-series 123 metal oxide. The substrate may be produced by immersing a seed material in a liquid phase which comprises components constituting the metal oxide. The liquid phase contains a solid phase located at a position different from the position at which the seed material contacts the liquid phase. The solid phase provides the liquid phase with solutes which constitute the Y-series 123 metal oxide so that the solutes are transported to the position at which the seed material and the liquid phase contact, thereby permitting the Y-series 123 metal oxide to grow on the seed material as primary crystals and to obtain the bulky substrate. The layer of a Y-series 123 metal oxide may be formed on the substrate by a sputtering method, a vacuum deposition method, a laser abrasion method, a CVD method or a liquid phase epitaxy method.
摘要翻译：一种复合材料，其特征在于，包括Y系123金属氧化物晶体的体积大的基板，以及设置在所述基板的表面上的由Y系123金属氧化物晶体形成的至少一层。基材可以通过将种子材料浸入包含构成金属氧化物的组分的液相中来制备。液相含有位于与种子材料接触液相的位置不同的位置的固相。固相为构成Y系123金属氧化物的溶质提供液相，使得溶质被输送到种子材料和液相接触的位置，从而允许Y系列123金属氧化物生长种子材料作为主要晶体并获得体积大的底物。可以通过溅射法，真空沉积法，激光磨蚀法，CVD法或液相外延法在基板上形成Y系123金属氧化物层。

7. 发明授权

US5872079A Superconductor and precursor therefor, their preparation and use of superconductor 失效
标题翻译：超导体及其前体，其超导体的制备和使用
公开(公告)号：US5872079A
公开(公告)日：1999-02-16
申请号：US762211
申请日：1996-12-06
申请人： Masaru Nakamura , Yasuji Yamada , Jian-Guo Wen , Yuh Shiohara , Shoji Tanaka
发明人： Masaru Nakamura , Yasuji Yamada , Jian-Guo Wen , Yuh Shiohara , Shoji Tanaka
IPC分类号： C04B35/45 , C01G1/00 , C01G3/00 , H01B12/02 , H01B13/00 , H01L39/12 , H01L39/24 , H01B12/00 , C04B35/50 , C04B35/622
CPC分类号： H01L39/126 , Y10S505/78 , Y10S505/819
摘要： A superconductor comprising a compound of the formula (II):R.sub.1+x Ba.sub.2-x Cu.sub.3 O.sub.7-y1 (II)wherein not less than 40% of a crystal of the superconductor shows phase separation, and at (temperature, magnetic field) of (77�K!, O�T!) and (77�K!, 4�T!), a critical current density is not less than 10,000 A/cm.sup.2, which is obtained by heating a precursor which is a solid solution of the formula (I):R.sub.1+x Ba.sub.2-x Cu.sub.3 O.sub.7-y (I)wherein not more than 10% of a crystal of the solid solution shows phase separation, so that phase separation is formed in the crystals at a phase separation temperature, and introducing oxygen; and a superconductor comprising a compound of the formula (II):R.sub.1+x Ba.sub.2-x Cu.sub.3 O.sub.7-y1 (II)wherein not more than 10% of a crystal of the superconductor shows phase separation, and in a magnetic field of not less than 1�T! at a constant temperature of 77�K!, a critical current density is less than 10,000 A/cm.sup.2, which is obtained by introducing oxygen into the precursor (I) at a temperature less than the lower limit of the phase separation temperature. According to the method of the present invention, a superconductor having a high Jc or having different properties with respect to Jc, which is unobtainable by the conventional production method, can be obtained using the conventional materials.
摘要翻译：包含式（II）化合物的超导体：R1 + xBa2-xCu3O7-y1（II）其中不低于40％的超导体的晶体显示相分离，并且在（77℃）的（温度， K]，O [T]）和（77 [K]，4 [T]），临界电流密度不小于10,000A / cm 2，这是通过加热作为式 I）：R1 + xBa2-xCu3O7-y（I）其中不超过10％的固溶体晶体显示相分离，从而在相分离温度下在晶体中形成相分离并引入氧; 以及包含式（II）的化合物的超导体：R1 + xBa2-xCu3O7-y1（II）其中不超过10％的超导体的晶体显示相分离，并且在不小于1 [ T]在77 [K]的恒定温度下，临界电流密度小于10,000A / cm 2，其通过在低于相分离温度的下限的温度下将氧引入前体（I）而获得。根据本发明的方法，可以使用常规材料获得具有高Jc或具有相对于Jc的不同性能的超导体，其通过常规制备方法是不可获得的。

8. 发明授权

US5728214A Surface treatment of an oxide LNBA2CU307-X single crystal 失效
标题翻译：表面处理氧化物LNBA2CU307-X单晶
公开(公告)号：US5728214A
公开(公告)日：1998-03-17
申请号：US524490
申请日：1995-09-06
申请人： Masaya Konishi , Hiroyuki Fuke , Youichi Enomoto , Yuh Shiohara , Shoji Tanaka
发明人： Masaya Konishi , Hiroyuki Fuke , Youichi Enomoto , Yuh Shiohara , Shoji Tanaka
IPC分类号： C30B29/22 , C01G1/00 , C01G3/00 , C30B33/00 , H01L21/203 , C30B25/02
CPC分类号： C30B33/00 , C30B29/22 , C30B29/225
摘要： When a cuprate oxide LnBa.sub.2 Cu.sub.3 O.sub.7-x (Ln=Y, Pr or Sm; 0.30.ltoreq.x.ltoreq.1) single crystal is heated for growing a film epitaxially on the crystal or for smoothing a damaged surface of the single crystal, many large protrusions occur on the surface of the oxide single crystal substrate or the film. The smooth surface of the oxides becomes rugged by the protrusions. According to the present invention, however, the oxide substrate or the oxide superconductor film can be heated in an atmosphere including oxygen of a partial pressure between 50 mTorr and 200 mTorr to prevent the protrusions from originating on the surface of the heated oxides.
摘要翻译：当加热铜盐氧化物LnBa2Cu3O7-x（Ln = Y，Pr或Sm; 0.30

9. 发明授权

US06235685B1 Production method of joints of superconducting oxide and normal conductor 有权
标题翻译：超导氧化物和正常导体接头的生产方法
公开(公告)号：US06235685B1
公开(公告)日：2001-05-22
申请号：US09439286
申请日：1999-11-15
申请人： Junya Maeda , Teruo Izumi , Yuichi Imagawa , Satoshi Matsuoka , Yuh Shiohara , Shoji Tanaka , Hiroshi Okamoto
发明人： Junya Maeda , Teruo Izumi , Yuichi Imagawa , Satoshi Matsuoka , Yuh Shiohara , Shoji Tanaka , Hiroshi Okamoto
IPC分类号： H01B1200
CPC分类号： H01L39/02 , Y10S505/74 , Y10S505/741 , Y10S505/821
摘要： A rod 1 made of superconducting oxide is soaked in a molten normal conductor 2 to join the rod 1 and the normal conductor 2, whereby a superconducting oxide current lead is prepared. As a result, a contact resistance at the interface between the superconducting oxide and the normal conductor can be reduced. Consequently, Joule's heat at a current lead having a small cross sectional area can be suppressed low, which in turn realizes the reduction of the load on a freezer and the amount of evaporated cooling solvent, with respect to a superconducting coil.
摘要翻译：将由超导氧化物制成的棒1浸泡在熔融的法定导体2中，以连接棒1和正常导体2，由此制备超导氧化物电流引线。结果，可以降低超导氧化物和正常导体之间的界面处的接触电阻。因此，可以将具有小横截面积的电流引线上的焦耳热量抑制得较低，这又实现了相对于超导线圈，冷冻机上的负载和蒸发冷却溶剂的量的减少。

10. 发明授权

US5407907A Method of preparing metal oxide crystal 失效
标题翻译：制备金属氧化物晶体的方法
公开(公告)号：US5407907A
公开(公告)日：1995-04-18
申请号：US65148
申请日：1993-05-21
申请人： Yasuji Yamada , Teruo Izumi , Kanshi Ohtsu , Yuichi Nakamura , Kengo Ishige , Yuh Shiohara , Minoru Tagami , Shoji Tanaka
发明人： Yasuji Yamada , Teruo Izumi , Kanshi Ohtsu , Yuichi Nakamura , Kengo Ishige , Yuh Shiohara , Minoru Tagami , Shoji Tanaka
IPC分类号： C30B15/02 , C01G1/00 , C01G3/00 , C30B15/00 , C30B15/36 , C30B29/16 , C30B29/22 , H01B13/00 , H01L39/24
CPC分类号： C30B29/225 , C30B15/36 , Y10S505/729
摘要： A method of pulling a crystal of a metal oxide is disclosed, in which the growth of the crystal is performed in a liquid phase having a composition which is different from the metal oxide and which contains components constituting the metal oxide. The liquid phase is in contact with a solid phase located at a position separated from the position at which the crystal of the metal oxide grows. The solid phase has a composition different from that of the metal oxide and supplies components constituting the metal oxide to the liquid phase.
摘要翻译：公开了一种拉制金属氧化物晶体的方法，其中晶体的生长在具有不同于金属氧化物并且含有构成金属氧化物的成分的组成的液相中进行。液相与位于与金属氧化物晶体生长位置分离的位置的固相接触。固相具有与金属氧化物不同的组成，并将构成金属氧化物的成分供给液相。

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