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1. 发明授权

US5728214A Surface treatment of an oxide LNBA2CU307-X single crystal 失效
标题翻译：表面处理氧化物LNBA2CU307-X单晶
公开(公告)号：US5728214A
公开(公告)日：1998-03-17
申请号：US524490
申请日：1995-09-06
申请人： Masaya Konishi , Hiroyuki Fuke , Youichi Enomoto , Yuh Shiohara , Shoji Tanaka
发明人： Masaya Konishi , Hiroyuki Fuke , Youichi Enomoto , Yuh Shiohara , Shoji Tanaka
IPC分类号： C30B29/22 , C01G1/00 , C01G3/00 , C30B33/00 , H01L21/203 , C30B25/02
CPC分类号： C30B33/00 , C30B29/22 , C30B29/225
摘要： When a cuprate oxide LnBa.sub.2 Cu.sub.3 O.sub.7-x (Ln=Y, Pr or Sm; 0.30.ltoreq.x.ltoreq.1) single crystal is heated for growing a film epitaxially on the crystal or for smoothing a damaged surface of the single crystal, many large protrusions occur on the surface of the oxide single crystal substrate or the film. The smooth surface of the oxides becomes rugged by the protrusions. According to the present invention, however, the oxide substrate or the oxide superconductor film can be heated in an atmosphere including oxygen of a partial pressure between 50 mTorr and 200 mTorr to prevent the protrusions from originating on the surface of the heated oxides.
摘要翻译：当加热铜盐氧化物LnBa2Cu3O7-x（Ln = Y，Pr或Sm; 0.30

2. 发明授权

US5512541A Method of producing an oxide superconductor single crystal film 失效
标题翻译：氧化物超导体单晶膜的制造方法
公开(公告)号：US5512541A
公开(公告)日：1996-04-30
申请号：US304770
申请日：1994-09-12
申请人： Masaya Konishi , Kunihiko Hayashi , Youichi Enomoto , Shoji Tanaka , Yasuji Yamada , Kanshi Ohtsu , Yasuo Kanamori , Yuh Shiohara
发明人： Masaya Konishi , Kunihiko Hayashi , Youichi Enomoto , Shoji Tanaka , Yasuji Yamada , Kanshi Ohtsu , Yasuo Kanamori , Yuh Shiohara
IPC分类号： C23C14/08 , C30B23/02 , C30B23/08 , C30B25/06 , C30B25/18 , C30B29/22 , H01L21/203 , H01L39/24 , C30B23/00
CPC分类号： H01L39/2458 , C30B23/02 , C30B29/22 , C30B29/225 , Y10S117/904 , Y10S505/729
摘要： The present invention is directed to a method for growing a superconductive film on a superconductive substrate in order to produce a bulk single crystal. According to a preferred embodiment, an oxide superconductive film of a material which is the same or similar to the substrate material is epitaxially grown at a temperature between 450.degree. C. and 800.degree. C. so that the film and substrate have the same lattice orientations. According to the present invention, problems associated with conventional films having non-superconductor substrates (e.g., MgO and SrTiO.sub.3) are avoided.
摘要翻译：本发明涉及一种用于在超导衬底上生长超导膜以制造大块单晶的方法。根据优选的实施方案，在450℃和800℃之间的温度下外延生长与该衬底材料相同或相似的材料的氧化物超导膜，使得该膜和衬底具有相同的晶格取向。根据本发明，避免了与具有非超导体衬底（例如，MgO和SrTiO 3）的常规膜相关的问题。

3. 发明授权

US06613463B1 Superconducting laminated oxide substrate and superconducting integrated circuit 失效
标题翻译：超导叠层氧化物基板和超导集成电路
公开(公告)号：US06613463B1
公开(公告)日：2003-09-02
申请号：US09653404
申请日：2000-09-01
申请人： Teruo Izumi , Satoshi Koyama , Yuh Shiohara , Shoji Tanaka , Masahiro Egami , Youichi Enomoto , Hideo Suzuki , Michitomo Iiyama
发明人： Teruo Izumi , Satoshi Koyama , Yuh Shiohara , Shoji Tanaka , Masahiro Egami , Youichi Enomoto , Hideo Suzuki , Michitomo Iiyama
IPC分类号： B32B1900
CPC分类号： H01L39/2419 , Y10S428/93
摘要： A superconducting laminated oxide substrate, which comprises a laminate a layer of a superconducting oxide crystal substrate made of a superconducting oxide single crystal or a superconducting oxide polycrystal and a layer of a reinforcing crystal substrate, prevents cracks from occurring in the superconducting oxide crystal substrate due to the heat treatment conducted for the purpose of forming an insulation film or a conductor film, and provides easy connectivity between electrodes and wiring formed on substrates located at upper and lower positions.
摘要翻译：超导层叠氧化物基板包括由超导氧化物单晶或超导氧化物多晶体构成的超导氧化物晶体基板层和层叠增强晶体基板的层叠体，防止在超导氧化物晶体基板中产生裂纹进行为了形成绝缘膜或导体膜而进行的热处理，并且提供电极与位于上部和下部位置的基板上形成的布线之间的易连接性。

4. 发明授权

US5834794A Superconducting device 失效
标题翻译：超导装置
公开(公告)号：US5834794A
公开(公告)日：1998-11-10
申请号：US848268
申请日：1997-04-29
申请人： Hiroyuki Fuke , Kazuo Saitoh , Youichi Enomoto
发明人： Hiroyuki Fuke , Kazuo Saitoh , Youichi Enomoto
IPC分类号： G01R33/035 , H01L39/22 , H01L39/24 , H03K19/195 , H01L29/06
CPC分类号： H03K19/1952
摘要： Disclosed is a superconducting device comprising a logic SQUID and a readout SQUID magnetically coupled with the logic SQUID, which are fabricated using a single layer of an oxide high-temperature superconductor, wherein the logic SQUID comprising a superconducting loop constituted by a first superconducting line, a second superconducting line arranged to be parallel to the first superconducting line, third and fourth superconducting lines provided to connect the first and second superconducting lines, and two Josephson junctions formed in the third and fourth superconducting lines, and widths W.sub.1 and W.sub.2 of the first and second superconducting lines are larger than a distance d between them, the width W.sub.2 is larger than the width W.sub.1, and the widths W.sub.1 and W.sub.2 are larger than the widths W.sub.3 and W.sub.4 of the third and fourth superconducting lines.
摘要翻译：公开了一种超导装置，其包括逻辑SQUID和与逻辑SQUID磁耦合的读出SQUID，其使用单层氧化物高温超导体制造，其中包括由第一超导线构成的超导环路的逻辑SQUID，布置成与第一超导线平行的第二超导线，设置成连接第一和第二超导线的第三和第四超导线以及形成在第三和第四超导线中的两个约瑟夫逊结，以及形成在第一和第二超导线中的第一和第四超导线的宽度W1和W2 并且第二超导线大于它们之间的距离d，宽度W2大于宽度W1，并且宽度W1和W2大于第三和第四超导线的宽度W3和宽度W4。

5. 发明授权

US6011981A Oxide superconductor multilayered film and oxide superconductor josephson device 失效
标题翻译：氧化物超导体多层膜和氧化物超导体约瑟夫森装置
公开(公告)号：US6011981A
公开(公告)日：2000-01-04
申请号：US814172
申请日：1997-03-10
申请人： Gustavo Alvarez , Furen Wang , Jian-Guo Wen , Naoki Koshizuka , Youichi Enomoto , Tadashi Utagawa , Shoji Tanaka
发明人： Gustavo Alvarez , Furen Wang , Jian-Guo Wen , Naoki Koshizuka , Youichi Enomoto , Tadashi Utagawa , Shoji Tanaka
IPC分类号： H01L39/12 , H01L39/22
CPC分类号： H01L39/128 , H01L39/225 , Y10S505/702
摘要： An oxide superconducting multilayered thin film structure having a laminated layer structure of oxide superconductor thin film layers and non-superconductor thin film layers constituted by a combination of material groups for making strain free interfaces among both thin film layers. For example, an oxide superconductor multilayered film constituted by a laminated layer structure where thin films of an oxide superconductor represented by the chemical formula of M'Ba.sub.2 Cu.sub.3 O.sub.7-.delta. (M'; a rare earth element of Nd, Sm, Eu or the like or an alloy of these, .delta.; oxygen depletion amount) and thin films of an oxide represented by the chemical formula of M*Ba.sub.2 Cu.sub.3 O.sub.7-.delta. (M*; an element of Pr, Sc or the like or an alloy of these, .delta.; oxygen depletion amount) are alternately stacked. The oxide thin films are thin films fabricated by a pulsed laser deposition process or a sputtering process. A Josephson device can be provided by using the multilayered film.
摘要翻译：一种氧化物超导多层薄膜结构，其具有由氧化物超导体薄膜层和非超导体薄膜层组成的层叠层结构，所述非超导薄膜层由两个薄膜层之间形成无应力界面的材料组合组成。例如，由M'Ba2Cu3O7-δ（M'，Nd，Sm，Eu等的稀土元素表示的氧化物超导体的薄膜的层叠层结构构成的氧化物超导体多层膜，这些的合金，δ;氧耗尽量）和由化学式M * Ba2Cu3O7-δ（M *; Pr，Sc等元素或它们的合金，δ;氧气）表示的氧化物薄膜耗尽量）交替堆叠。氧化物薄膜是通过脉冲激光沉积工艺或溅射工艺制造的薄膜。可以通过使用多层膜来提供约瑟夫森装置。

6. 发明授权

US5883051A High Tc superconducting Josephson junction element 失效
标题翻译：高Tc超导约瑟夫逊结元件
公开(公告)号：US5883051A
公开(公告)日：1999-03-16
申请号：US735117
申请日：1996-10-22
申请人： Yoshihiro Ishimaru , Jian-Guo Wen , Kunihiko Hayashi , Youichi Enomoto , Naoki Koshizuka , Shoji Tanaka
发明人： Yoshihiro Ishimaru , Jian-Guo Wen , Kunihiko Hayashi , Youichi Enomoto , Naoki Koshizuka , Shoji Tanaka
IPC分类号： H01L39/22 , H01L39/24
CPC分类号： H01L39/225 , Y10S428/93 , Y10S505/702
摘要： A superconducting Josephson junction element including a first, a-axis oriented, superconductive metal oxide crystal grain having a first area of a {001} plane, and a second, c-axis oriented, superconductive metal oxide crystal grain having a second area of a {110} plane, wherein the first and second crystal grains are in contact with each other at the first and second areas to form a grain boundary therebetween.
摘要翻译：一种超导约瑟夫逊结元件，其包括具有第一面积{001}面的第一，a轴取向的超导金属氧化物晶粒和第二c轴取向的超导金属氧化物晶粒，其具有第二面积 {110}面，其中第一和第二晶粒在第一和第二区域彼此接触以在它们之间形成晶界。

7. 发明授权

US5877122A Josephson element having a NdBa.sub.2 Cu.sub.3 O.sub.7-y superconductor thin-film wiring pattern 失效
标题翻译：具有NdBa2Cu3O7-y超导体薄膜布线图案的约瑟夫逊元件
公开(公告)号：US5877122A
公开(公告)日：1999-03-02
申请号：US649205
申请日：1996-05-17
申请人： Yoshihiro Ishimaru , Yuuji Mizuno , Katsumi Suzuki , Youichi Enomoto , Shoji Tanaka
发明人： Yoshihiro Ishimaru , Yuuji Mizuno , Katsumi Suzuki , Youichi Enomoto , Shoji Tanaka
IPC分类号： H01L39/22 , H01L39/24
CPC分类号： H01L39/2496 , H01L39/225 , Y10S505/702
摘要： An oxide superconductor element, produced by forming a damaged region on a substrate surface by the Ga.sup.+ focusing ion beam method and then depositing an oxide superconductor thin-film over it, is characterized in that a NdBa.sub.2 Cu.sub.3 O.sub.7-y (0.ltoreq.y.ltoreq.0.5) oxide superconductor is used in a tunnel junction having a tunneling barrier region with weak superconductivity.
摘要翻译：通过Ga +聚焦离子束法在衬底表面上形成受损区域，然后在其上沉积氧化物超导体薄膜产生的氧化物超导体元件的特征在于，NdBa2Cu3O7-y（0≤y< = 0.5）氧化物超导体用于具有弱超导性的隧道势垒区的隧道结中。

8. 发明授权

US5650376A (Nd, Ba).sub.3 Cu.sub.3 O.sub.7-d superconductor film 失效
标题翻译：（Nd，Ba）3Cu3O7-d超导体膜
公开(公告)号：US5650376A
公开(公告)日：1997-07-22
申请号：US554585
申请日：1995-11-06
申请人： Massoud Badaye , Tadataka Morishita , Youichi Enomoto , Shoji Tanaka
发明人： Massoud Badaye , Tadataka Morishita , Youichi Enomoto , Shoji Tanaka
IPC分类号： C01G1/00 , C01G3/00 , C01G3/02 , C23C14/08 , C30B23/08 , C30B29/22 , H01L39/02 , H01L39/12 , H01L39/24 , B32B9/00
CPC分类号： H01L39/126 , Y10S428/93 , Y10S505/701
摘要： A superconducting film is disclosed which has the following composition:(Nd, Ba).sub.3 Cu.sub.3 O.sub.7-dwhere d is a number greater than 0 but smaller than 0.5. The superconducting film has the same crystal structure as that of YBa.sub.2 Cu.sub.3 O.sub.7 except that part of the Nd sites and/or part of the Ba sites are occupied by Ba and Nd atoms, respectively.
摘要翻译：公开了具有以下组成的超导膜：（Nd，Ba）3Cu 3 O 7 - 其中d是大于0但小于0.5的数。超导薄膜具有与YBa2Cu3O7相同的晶体结构，不同之处在于部分Nd位置和/或部分Ba位置被Ba和Nd原子所占据。

9. 发明授权

US5571778A Superconducting junction material and process of preparing same 失效
标题翻译：超导接头材料及其制备方法
公开(公告)号：US5571778A
公开(公告)日：1996-11-05
申请号：US413999
申请日：1995-03-30
申请人： Manabu Fujimoto , Katsumi Suzuki , Youichi Enomoto , Shoji Tanaka
发明人： Manabu Fujimoto , Katsumi Suzuki , Youichi Enomoto , Shoji Tanaka
IPC分类号： H01L39/22 , H01L27/18 , H01L39/14 , H01L39/24 , B44C1/22 , B05D5/00
CPC分类号： H01L27/18 , H01L39/145 , H01L39/2496 , Y10S505/728
摘要： A superconductor junction material is disclosed which comprises a substrate of a single crystal, and at least flux flow element, and optionally at least one Josephson junction element, provided on the surface, each of the flux flow and Josephson junction elements being formed of a superconducting oxide layer having a weak link. The flux flow and Josephson junction elements are prepared by vacuum deposition at different oxygen partial pressures.
摘要翻译：公开了一种超导体接合材料，其包括单晶体的衬底，以及设置在表面上的至少一个通量流动元件和任选的至少一个约瑟夫逊结元件，每个磁通流和约瑟夫逊结元件由超导体具有弱连接的氧化物层。通过真空沉积在不同的氧分压下制备通量流和约瑟夫逊结元件。

10. 发明授权

US5534715A Josephson junction in a wiring pattern of a superconductor oxide 失效
标题翻译：约瑟夫逊结在超导体氧化物的布线图中
公开(公告)号：US5534715A
公开(公告)日：1996-07-09
申请号：US148277
申请日：1993-11-08
申请人： Christian Neumann , Katsumi Suzuki , Youichi Enomoto , Shoji Tanaka
发明人： Christian Neumann , Katsumi Suzuki , Youichi Enomoto , Shoji Tanaka
IPC分类号： H01L39/22 , H01L39/24
CPC分类号： H01L39/2496
摘要： A Josephson junction is disclosed which includes a substrate of a single crystal having a substantially flat surface, a wiring pattern of an oxide superconductor formed on the flat surface of the substrate, and an altered region formed having a width of 300 nm or less and formed in the wiring pattern to intersect the wiring pattern, the crystal orientations of the wiring pattern on both sides of the altered region being equal to each other. The Josephson junction may be prepared by a process including the steps of: (a) coating a surface of a substrate of a single crystal with a normal metal to form a protecting layer over the surface of the substrate; (b) irradiating a predetermined portion of the protecting layer with a focused ion beam so that an irradiated portion is formed in the substrate; (c) removing the protecting layer from the substrate; and (d) forming a wiring pattern of an oxide superconductor on the surface of the substrate from which the protecting layer has been removed such that the wiring pattern crosses the irradiated portion of the substrate, thereby forming an altered portion in the wiring pattern at a position above the irradiated portion.
摘要翻译：公开了一种约瑟夫逊结，其包括具有基本上平坦的表面的单晶的衬底，形成在衬底的平坦表面上的氧化物超导体的布线图案和形成为具有300nm或更小的宽度的改变区域在与布线图案相交的布线图案中，改变区域两侧的布线图案的晶体取向彼此相等。约瑟夫逊结可以通过包括以下步骤的方法来制备：（a）用普通金属涂覆单晶的衬底的表面以在衬底的表面上形成保护层; （b）用聚焦离子束照射保护层的预定部分，使得在基板中形成照射部分; （c）从衬底上去除保护层; 以及（d）在已经去除了保护层的基板的表面上形成氧化物超导体的布线图案，使得布线图案与基板的照射部分交叉，从而在布线图案中形成改变部分位于照射部分上方。

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