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    • 1. 发明授权
    • Superconductor and precursor therefor, their preparation and use of
superconductor
    • 超导体及其前体,其超导体的制备和使用
    • US5872079A
    • 1999-02-16
    • US762211
    • 1996-12-06
    • Masaru NakamuraYasuji YamadaJian-Guo WenYuh ShioharaShoji Tanaka
    • Masaru NakamuraYasuji YamadaJian-Guo WenYuh ShioharaShoji Tanaka
    • C04B35/45C01G1/00C01G3/00H01B12/02H01B13/00H01L39/12H01L39/24H01B12/00C04B35/50C04B35/622
    • H01L39/126Y10S505/78Y10S505/819
    • A superconductor comprising a compound of the formula (II):R.sub.1+x Ba.sub.2-x Cu.sub.3 O.sub.7-y1 (II)wherein not less than 40% of a crystal of the superconductor shows phase separation, and at (temperature, magnetic field) of (77�K!, O�T!) and (77�K!, 4�T!), a critical current density is not less than 10,000 A/cm.sup.2, which is obtained by heating a precursor which is a solid solution of the formula (I):R.sub.1+x Ba.sub.2-x Cu.sub.3 O.sub.7-y (I)wherein not more than 10% of a crystal of the solid solution shows phase separation, so that phase separation is formed in the crystals at a phase separation temperature, and introducing oxygen; and a superconductor comprising a compound of the formula (II):R.sub.1+x Ba.sub.2-x Cu.sub.3 O.sub.7-y1 (II)wherein not more than 10% of a crystal of the superconductor shows phase separation, and in a magnetic field of not less than 1�T! at a constant temperature of 77�K!, a critical current density is less than 10,000 A/cm.sup.2, which is obtained by introducing oxygen into the precursor (I) at a temperature less than the lower limit of the phase separation temperature. According to the method of the present invention, a superconductor having a high Jc or having different properties with respect to Jc, which is unobtainable by the conventional production method, can be obtained using the conventional materials.
    • 包含式(II)化合物的超导体:R1 + xBa2-xCu3O7-y1(II)其中不低于40%的超导体的晶体显示相分离,并且在(77℃)的(温度, K],O [T])和(77 [K],4 [T]),临界电流密度不小于10,000A / cm 2,这是通过加热作为式 I):R1 + xBa2-xCu3O7-y(I)其中不超过10%的固溶体晶体显示相分离,从而在相分离温度下在晶体中形成相分离并引入氧; 以及包含式(II)的化合物的超导体:R1 + xBa2-xCu3O7-y1(II)其中不超过10%的超导体的晶体显示相分离,并且在不小于1 [ T]在77 [K]的恒定温度下,临界电流密度小于10,000A / cm 2,其通过在低于相分离温度的下限的温度下将氧引入前体(I)而获得。 根据本发明的方法,可以使用常规材料获得具有高Jc或具有相对于Jc的不同性能的超导体,其通过常规制备方法是不可获得的。
    • 6. 发明授权
    • Workpiece dividing method including two laser beam application steps
    • 工件分割方法包括两个激光束施加步骤
    • US09099546B2
    • 2015-08-04
    • US13275878
    • 2011-10-18
    • Masaru Nakamura
    • Masaru Nakamura
    • H01L21/00H01L21/78
    • H01L21/78
    • A dividing method for a workpiece having a substrate with a film formed on the front side thereof. A first laser beam is applied to the film from the front side of the workpiece along the streets formed on the film, thereby forming a plurality of laser processed grooves along the streets to cut the film along the streets. Thereafter, an adhesive tape is attached to the front side of the workpiece. Thereafter, a second laser beam is applied to the substrate from the back side of the workpiece along the streets in the condition where the focal point of the second laser beam is set inside the substrate, thereby forming a plurality of modified layers inside the substrate along the streets. Thereafter, the adhesive tape is expanded to thereby divide the substrate along the streets, thereby obtaining a plurality of individual devices. Thereafter, the back side of the substrate of each device is ground to remove the modified layers and reduce the thickness of each device to a predetermined thickness.
    • 一种具有在其前侧形成有膜的基板的工件的分割方法。 第一激光束沿着形成在膜上的街道从工件的前侧施加到膜上,从而沿着街道形成多个激光加工槽,以沿着街道切割膜。 此后,粘合带附着在工件的正面。 此后,在第二激光束的焦点设置在基板的内部的状态下,沿着街道将第二激光束从工件的背面施加到基板,由此在基板内部形成多个改性层 街头。 此后,将胶带膨胀,从而沿着街道划分基板,从而获得多个单独的装置。 此后,研磨每个器件的衬底的背面以去除改性层,并将每个器件的厚度减小到预定厚度。
    • 7. 发明授权
    • Laser beam machining apparatus
    • 激光束加工设备
    • US08704126B2
    • 2014-04-22
    • US12248685
    • 2008-10-09
    • Masaru Nakamura
    • Masaru Nakamura
    • B23K26/00B23K26/06
    • B23K26/0853B23K26/0006B23K2101/40B23K2103/56
    • A laser beam machining apparatus includes laser beam irradiation unit for irradiating a wafer held on a chuck table with a laser beam, and control unit. The laser beam irradiation unit includes a laser beam oscillator for oscillating a laser beam with such a wavelength as to be transmitted through said wafer, repetition frequency setting section for setting a repetition frequency of pulses in the laser beam oscillated from the laser beam oscillator. The control unit includes a memory for storing coordinates of an arcuate chamfer part formed at the outer periphery of the wafer and coordinates of a flat surface part surrounded by the chamfer part, and controls the repetition frequency setting section so as to set the repetition frequency of the pulses in the laser beam with which to irradiate the flat surface part to a value suitable for machining of the wafer and as to set the repetition frequency of the pulses in the laser beam with which to irradiate the chamfer part to a value higher than the repetition frequency in the pulses of the laser beam with which to irradiate the flat surface part.
    • 一种激光束加工设备,包括:激光束照射单元,用于用激光束照射夹持在卡盘台上的晶片;以及控制单元。 激光束照射单元包括激光束振荡器,用于振荡具有透射通过所述晶片的波长的激光束,重复频率设置部分用于设置从激光束振荡器振荡的激光束中的脉冲的重复频率。 控制单元包括存储器,用于存储形成在晶片外围的弧形倒角部分的坐标和由倒角部分包围的平坦表面部分的坐标,并控制重复频率设置部分,以便设置重复频率 用于将平坦表面部分照射到激光束中的脉冲到适于晶片加工的值,并且将激光束中的脉冲的重复频率设置为高于 用于照射平面部分的激光束的脉冲中的重复频率。
    • 8. 发明授权
    • System, device and method for TDMA-based networking using space division multiplexed transmissions
    • 使用空分复用传输的基于TDMA的网络的系统,设备和方法
    • US08605708B2
    • 2013-12-10
    • US13233152
    • 2011-09-15
    • Masaru Nakamura
    • Masaru Nakamura
    • H04B1/00
    • H04B7/0617G01S13/74H04B7/026H04B7/0408H04B7/0452H04B7/0697H04B7/2643H04W16/28H04W72/0446H04W72/046H04W74/0816H04W84/18H04W88/02
    • A wireless communication system includes wireless terminals. Each of the wireless terminals includes an SDM transmitting unit that includes antennas and generates directional radio signals to be transmitted to other terminals, each of which is obtained by superimposing radio signals at the antennas, each of which is composed of modulated data for each of the other terminals; a single-system receiving unit; and a TDMA control unit that controls a transmission of the SDM transmitting unit and a reception of the receiving unit in a time division manner. Using a TDMA scheme, the wireless terminals are controlled such that one of the wireless terminals acquires a transmission right for a predetermined time period to simultaneously transmit the generated directional radio signals from the SDM transmitting unit, while during the predetermined time period, the receiving units of the other wireless terminals having no transmission right simultaneously receive their corresponding directional radio signals.
    • 无线通信系统包括无线终端。 每个无线终端包括包含天线的SDM发送单元,并且生成要发送到其他终端的定向无线电信号,其中每个终端通过在天线叠加无线电信号而获得,每个由无线电信号组成,每个由 其他终端; 单系统接收单元; 以及TDMA控制单元,其以时分方式控制SDM发送单元的发送和接收单元的接收。 使用TDMA方案,控制无线终端,使得无线终端中的一个在预定时间段内获取发送权限,以在SDM发送单元同时发送生成的定向无线电信号,而在预定时间段期间,接收单元 没有发送权限的其他无线终端同时接收其相应的定向无线电信号。
    • 10. 发明申请
    • DIVIDING METHOD FOR PLATELIKE WORKPIECE
    • 平板电脑工作分拣方法
    • US20110034007A1
    • 2011-02-10
    • US12837235
    • 2010-07-15
    • Yoshiaki YodoMasaru Nakamura
    • Yoshiaki YodoMasaru Nakamura
    • H01L21/304
    • H01L21/78
    • A dividing method for a platelike workpiece having a two-layer structure such that a solder layer (metal layer) is formed on the back side of a wafer (substrate). First, a modified layer is formed in the wafer along each division line formed on the front side of the wafer. Thereafter, the workpiece is bent along each division line to thereby divide the wafer along each division line from the corresponding modified layer as a starting point and simultaneously form a weak portion in the solder layer along each division line. Thereafter, an expandion tape attached to the solder layer is expanded to apply an external force to the solder layer, thereby dividing the solder layer along each division line from the corresponding weak portion as a starting point. Thus, the workpiece is completely divided.
    • 具有双层结构的板状工件的分割方法,使得在晶片(基板)的背面上形成焊料层(金属层)。 首先,沿着形成在晶片的前侧上的每个划分线,在晶片中形成改性层。 此后,工件沿着每个分割线弯曲,从而沿着每个分割线将晶片与相应的改性层作为起始点,并沿着分割线同时形成焊料层中的弱部分。 此后,扩大连接于焊料层的扩展带,以向焊料层施加外力,从而沿着每个划分线将焊料层与相应的弱部分划分为起点。 因此,工件完全分开。