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1. 发明授权

US5985609A Process for preparing hepatitis C virus envelope glycoproteins 失效
标题翻译：制备丙型肝炎病毒包膜糖蛋白的方法
公开(公告)号：US5985609A
公开(公告)日：1999-11-16
申请号：US334545
申请日：1994-11-04
申请人： Mi-Kyung Min , Joon-Sang Park , Jung-Seob Kim , Yung-Dae Yun , Hong-Mo Moon
发明人： Mi-Kyung Min , Joon-Sang Park , Jung-Seob Kim , Yung-Dae Yun , Hong-Mo Moon
IPC分类号： A61K39/00 , C07K14/18 , C12N15/51 , C07H21/04 , C12Q1/70
CPC分类号： C07K14/005 , A61K39/00 , C12N2770/24222
摘要： The present invention relates to a novel process for preparing hepatitis C virus (HCV) envelope glycoproteins employing Chinese Hamster Ovary (CHO) cells transformed with recombinant expression vectors containing the hepatitis C virus genome. The present invention provides CHO cells cotransfected with DHFR (dihydrofolate reductase) minigene pDCHIP and recombinant expression vectors containing cDNAs of HCV E1 and E2/NS1 ligated with tissue plasminogen activator signal sequence. HCV E1 and E2/NS1 envelope glycoproteins are produced in a massive manner from the transformed CHO cells adapted in methotrexate. The HCV envelope glycoproteins produced by the present invention can be applied to the development of a diagnostic reagent and a potential preventive HCV vaccine.
摘要翻译：本发明涉及使用含有丙型肝炎病毒基因组的重组表达载体转化的中国仓鼠卵巢（CHO）细胞制备丙型肝炎病毒（HCV）包膜糖蛋白的新方法。本发明提供了与DHFR（二氢叶酸还原酶）小基因pDCHIP共转染的CHO细胞和含有与组织纤溶酶原激活物信号序列连接的HCV E1和E2 / NS1的cDNA的重组表达载体。从适应于甲氨蝶呤的转化的CHO细胞以大量方式产生HCV E1和E2 / NS1包膜糖蛋白。由本发明生产的HCV包膜糖蛋白可用于开发诊断试剂和潜在的预防性HCV疫苗。

2. 发明授权

US08168535B2 Method fabricating semiconductor device using multiple polishing processes 有权
标题翻译：使用多次抛光工艺制造半导体器件的方法
公开(公告)号：US08168535B2
公开(公告)日：2012-05-01
申请号：US13084657
申请日：2011-04-12
申请人： Jun-Soo Bae , Suk-Hun Choi , Won-Jun Lee , Joon-Sang Park
发明人： Jun-Soo Bae , Suk-Hun Choi , Won-Jun Lee , Joon-Sang Park
IPC分类号： H01L21/44
CPC分类号： H01L45/1683 , H01L45/06 , H01L45/141
摘要： A method of fabricating a phase change memory device includes the use of first, second and third polishing processes. The first polishing process forms a first contact portion using a first sacrificial layer and the second polishing process forms a phase change material pattern using a second sacrificial layer. After removing the first and second sacrificial layers to expose resultant protruding structures of the first contact portion and the phase change material pattern, a third polishing process is used to polish the resultant protruding structures using an insulation layer as a polishing stopper layer.
摘要翻译：制造相变存储器件的方法包括使用第一，第二和第三抛光工艺。第一抛光工艺使用第一牺牲层形成第一接触部分，并且第二抛光工艺使用第二牺牲层形成相变材料图案。在去除第一和第二牺牲层以暴露第一接触部分的相应突出结构和相变材料图案之后，使用第三抛光工艺来使用绝缘层作为抛光停止层来抛光所得的突出结构。

3. 发明授权

US08039829B2 Contact structure, a semiconductor device employing the same, and methods of manufacturing the same 有权
标题翻译：接触结构，采用该接触结构的半导体器件及其制造方法
公开(公告)号：US08039829B2
公开(公告)日：2011-10-18
申请号：US12412657
申请日：2009-03-27
申请人： Jeong-Hee Park , Yong-Ho Ha , Hyeong-Geun An , Joon-Sang Park , Hyun-Suk Kwon , Myung-Jin Kang , Doo-Hwan Park
发明人： Jeong-Hee Park , Yong-Ho Ha , Hyeong-Geun An , Joon-Sang Park , Hyun-Suk Kwon , Myung-Jin Kang , Doo-Hwan Park
IPC分类号： H01L47/00
CPC分类号： H01L45/06 , H01L45/1233 , H01L45/144 , H01L45/1666
摘要： A contact structure that includes a first pattern formed on a substrate, wherein the first pattern has a recessed region in an upper surface thereof, a planarized buffer pattern formed on the first pattern, and a conductive pattern formed on the planarized buffer pattern.
摘要翻译：一种接触结构，其包括形成在基板上的第一图案，其中所述第一图案在其上表面具有凹陷区域，形成在所述第一图案上的平坦化缓冲图案，以及形成在所述平坦化缓冲图案上的导电图案。

4. 发明申请

US20090243117A1 CONTACT STRUCTURE, A SEMICONDUCTOR DEVICE EMPLOYING THE SAME, AND METHODS OF MANUFACTURING THE SAME 有权
标题翻译：接触结构，使用其的半导体器件及其制造方法
公开(公告)号：US20090243117A1
公开(公告)日：2009-10-01
申请号：US12412657
申请日：2009-03-27
申请人： Jeong-Hee Park , Yong-Ho Ha , Hyeong-Geun An , Joon-Sang Park , Hyun-Suk Kwon , Myung-Jin Kang , Doo-Hwan Park
发明人： Jeong-Hee Park , Yong-Ho Ha , Hyeong-Geun An , Joon-Sang Park , Hyun-Suk Kwon , Myung-Jin Kang , Doo-Hwan Park
IPC分类号： H01L23/522 , H05K1/11
CPC分类号： H01L45/06 , H01L45/1233 , H01L45/144 , H01L45/1666
摘要： A contact structure that includes a first pattern formed on a substrate, wherein the first pattern has a recessed region in an upper surface thereof, a planarized buffer pattern formed on the first pattern, and a conductive pattern formed on the planarized buffer pattern.
摘要翻译：一种接触结构，其包括形成在基板上的第一图案，其中所述第一图案在其上表面具有凹陷区域，形成在所述第一图案上的平坦化缓冲图案，以及形成在所述平坦化缓冲图案上的导电图案。

5. 发明申请

US20050127347A1 Methods for fabricating memory devices using sacrificial layers and memory devices fabricated by same 有权
标题翻译：用于制造使用牺牲层的存储器件和由其制造的存储器件的方法
公开(公告)号：US20050127347A1
公开(公告)日：2005-06-16
申请号：US10999103
申请日：2004-11-29
申请人： Suk-Hun Choi , Yoon-Ho Son , Sung-Lae Cho , Joon-Sang Park
发明人： Suk-Hun Choi , Yoon-Ho Son , Sung-Lae Cho , Joon-Sang Park
IPC分类号： H01L21/4763 , H01L21/768 , H01L27/24 , H01L29/40
CPC分类号： H01L21/76816 , H01L21/76831 , H01L21/7684 , H01L21/76883 , H01L27/2436 , H01L27/2463 , H01L45/06 , H01L45/1233 , H01L45/126
摘要： A protection layer is formed on a semiconductor substrate having a cell array region and an alignment key region. A plurality of data storage elements are formed on the protection layer in the cell array region. An insulating layer is formed on the data storage elements, a barrier layer is formed on the insulating layer, and a sacrificial layer is formed on the barrier layer. The sacrificial layer, the barrier layer and the insulating layer are patterned to form contact holes that expose the data storage elements, and conductive plugs are formed in the contact holes. The sacrificial layer is etched to leave portions of the conductive plugs protruding from the barrier layer. The protruding portions of the conductive plugs are removed by polishing.
摘要翻译：在具有单元阵列区域和对准键区域的半导体基板上形成保护层。在单元阵列区域的保护层上形成多个数据存储元件。在数据存储元件上形成绝缘层，在绝缘层上形成阻挡层，在势垒层上形成牺牲层。牺牲层，阻挡层和绝缘层被图案化以形成暴露数据存储元件的接触孔，并且在接触孔中形成导电插塞。蚀刻牺牲层以使导电塞从阻挡层突出的部分。通过抛光去除导电塞的突出部分。

6. 发明申请

US20080011999A1 Microelectronic Devices Using Sacrificial Layers and Structures Fabricated by Same 有权
标题翻译：使用牺牲层的微电子器件和由其制造的结构
公开(公告)号：US20080011999A1
公开(公告)日：2008-01-17
申请号：US11860674
申请日：2007-09-25
申请人： Suk-Hun Choi , Yoon-Ho Son , Sung-Lae Cho , Joon-Sang Park
发明人： Suk-Hun Choi , Yoon-Ho Son , Sung-Lae Cho , Joon-Sang Park
IPC分类号： H01L45/00
CPC分类号： H01L45/06 , H01L27/2436 , H01L45/1233 , H01L45/126 , H01L45/16
摘要： A dielectric layer is formed on a region of a microelectronic substrate. A sacrificial layer is formed on the dielectric layer, and portions of the sacrificial layer and the dielectric layer are removed to form an opening that exposes a portion of the region. A conductive layer is formed on the sacrificial layer and in the opening. Portions of the sacrificial layer and the conductive layer on the dielectric layer are removed to leave a conductive plug in the dielectric layer and in contact with the region. Removal of the sacrificial layer and portions of the conductive layer on the dielectric layer may include polishing to expose the sacrificial layer and to leave a conductive plug in the sacrificial layer and the dielectric layer, etching the sacrificial layer to expose the dielectric layer and leave a portion of the conductive plug protruding from the dielectric layer, and polishing to remove the protruding portion of the conductive plug. Phase-change memory devices formed by such techniques are also discussed.
摘要翻译：在微电子基板的区域上形成介电层。在电介质层上形成牺牲层，去除牺牲层和电介质层的部分以形成露出该区域的一部分的开口。在牺牲层和开口中形成导电层。去除部分牺牲层和电介质层上的导电层，以在电介质层中留下导电插塞并与该区域接触。消除牺牲层和电介质层上的导电层的部分可以包括抛光以暴露牺牲层并在牺牲层和电介质层中留下导电插塞，蚀刻牺牲层以暴露电介质层并留下导电插头从电介质层突出的部分，并且抛光以去除导电插塞的突出部分。还讨论了通过这种技术形成的相变存储器件。

7. 发明申请

US20050130414A1 Methods for forming small features in microelectronic devices using sacrificial layers and structures fabricated by same 失效
标题翻译：在使用牺牲层和由其制造的结构的微电子器件中形成小特征的方法
公开(公告)号：US20050130414A1
公开(公告)日：2005-06-16
申请号：US10873388
申请日：2004-06-22
申请人： Suk-Hun Choi , Yoon-Ho Son , Sung-Lae Cho , Joon-Sang Park
发明人： Suk-Hun Choi , Yoon-Ho Son , Sung-Lae Cho , Joon-Sang Park
IPC分类号： H01L21/28 , H01L21/20 , H01L21/44 , H01L27/24 , H01L45/00
CPC分类号： H01L45/06 , H01L27/2436 , H01L45/1233 , H01L45/126 , H01L45/16
摘要： A dielectric layer is formed on a region of a microelectronic substrate. A sacrificial layer is formed on the dielectric layer, and portions of the sacrificial layer and the dielectric layer are removed to form an opening that exposes a portion of the region. A conductive layer is formed on the sacrificial layer and in the opening. Portions of the sacrificial layer and the conductive layer on the dielectric layer are removed to leave a conductive plug in the dielectric layer and in contact with the region. Removal of the sacrificial layer and portions of the conductive layer on the dielectric layer may include polishing to expose the sacrificial layer and to leave a conductive plug in the sacrificial layer and the dielectric layer, etching the sacrificial layer to expose the dielectric layer and leave a portion of the conductive plug protruding from the dielectric layer, and polishing to remove the protruding portion of the conductive plug. Phase-change memory devices formed by such techniques are also discussed.
摘要翻译：在微电子基板的区域上形成介电层。在电介质层上形成牺牲层，去除牺牲层和电介质层的部分以形成露出该区域的一部分的开口。在牺牲层和开口中形成导电层。去除部分牺牲层和电介质层上的导电层，以在电介质层中留下导电插塞并与该区域接触。消除牺牲层和电介质层上的导电层的部分可以包括抛光以暴露牺牲层并在牺牲层和电介质层中留下导电插塞，蚀刻牺牲层以暴露电介质层并留下导电插头从电介质层突出的部分，并且抛光以去除导电插塞的突出部分。还讨论了通过这种技术形成的相变存储器件。

8. 发明申请

US20050113009A1 Polishing pad conditioner and chemical mechanical polishing apparatus having the same 有权
标题翻译：抛光垫调节剂及其化学机械抛光装置
公开(公告)号：US20050113009A1
公开(公告)日：2005-05-26
申请号：US10985206
申请日：2004-11-10
申请人： Jong-Won Lee , Joon-Sang Park , Chang-Ki Hong
发明人： Jong-Won Lee , Joon-Sang Park , Chang-Ki Hong
IPC分类号： B24B53/007 , B24B53/02 , B24B7/00
CPC分类号： B24B53/017 , B24B53/02
摘要： Chemical mechanical apparatuses including a polishing pad conditioning unit for improving a conditioning rate and wear uniformity of a polishing pad are provided. In one aspect, a chemical mechanical polishing apparatus includes a polishing pad conditioner including conditioning disks disposed in a radial direction of a planarizing surface of a circular polishing pad and contacted with the planarizing surface of the circular polishing pad during rotation of the circular polishing pad. The conditioning disks are connected to first drive units supported by an arm disposed over the circular polishing pad and extended in a radial direction of a planarizing surface of the circular polishing pad. The arm is connected to second drive units. The second drive units move the arm horizontally and reciprocally in the radial direction of the planarizing surface of the circular polishing pad. Thus, a conditioning rate and wear uniformity of the polishing pad may be improved.
摘要翻译：提供了包括用于改善抛光垫的调理率和磨损均匀性的抛光垫调节单元的化学机械设备。在一个方面，一种化学机械抛光装置包括抛光垫调节器，其包括在圆形抛光垫的平坦化表面的径向方向上设置的调节盘，并且在圆形抛光垫的旋转期间与圆形抛光垫的平坦化表面接触。调节盘连接到由设置在圆形抛光垫上的臂支撑的第一驱动单元，并且在圆形抛光垫的平坦化表面的径向方向上延伸。臂连接到第二个驱动单元。第二驱动单元在圆形抛光垫的平坦化表面的径向水平和往复地移动臂。因此，可以提高抛光垫的调理率和磨损均匀性。

9. 发明授权

US5595072A Water current forming apparatus of washing machine 失效
标题翻译：洗衣机水流成型设备
公开(公告)号：US5595072A
公开(公告)日：1997-01-21
申请号：US400956
申请日：1995-03-08
申请人： Sang-Chul Bai , Joon-Sang Park
发明人： Sang-Chul Bai , Joon-Sang Park
IPC分类号： D06F17/04 , D06F17/06 , D06F37/12 , D06F39/08
CPC分类号： D06F17/06
摘要： A clothes washing machine includes outer and inner tubs, the inner tub being rotatable to perform a spin-dry operation. An oscillating pulsator is disposed in the inner tub for agitating water and laundry in the inner tub. A pumping member disposed below the pulsator is oscillatable along with the pulsator for pumping water upwardly through a central opening in the pulsator to generate an upward water current in a center of the inner tube which minimizes entanglement of clothes during a wash cycle.
摘要翻译：洗衣机包括外桶和内桶，内桶可旋转以进行旋转干燥操作。在内桶中设置有摆动波轮，用于搅拌内桶中的水和衣物。布置在脉动器下方的泵送构件与波轮一起可摆动，以将水向上泵送通过脉动器中的中心开口，以在内管的中心产生向上的水流，从而最大限度地减少洗涤周期中衣物的缠结。

10. 发明申请

US20110136290A1 ETCHING METHODS AND METHODS OF MANUFACTURING A CMOS IMAGE SENSOR USING THE SAME 有权
标题翻译：蚀刻方法和使用该方法制造CMOS图像传感器的方法
公开(公告)号：US20110136290A1
公开(公告)日：2011-06-09
申请号：US12959995
申请日：2010-12-03
申请人： Ki-Hyung KO , Byoung-Moon Yoon , Won-Jun Lee , Joon-Sang Park , Jun-Youl Yang , Seung-Ho Park , Myung-Jung Pyo
发明人： Ki-Hyung KO , Byoung-Moon Yoon , Won-Jun Lee , Joon-Sang Park , Jun-Youl Yang , Seung-Ho Park , Myung-Jung Pyo
IPC分类号： H01L21/306 , H01L21/20
CPC分类号： H01L27/14689 , H01L27/1464 , H01L27/14685
摘要： In an etching method, a thin layer is formed on a first surface of a first substrate doped with first impurities having a first doping concentration. The thin layer is doped with second impurities having a second doping concentration lower than the first doping concentration. A second substrate is formed on the thin layer. A second surface of the first substrate is polished. The polished first substrate is cleaned using a cleaning solution including ammonia and deionized water. The cleaned first substrate is etched to expose the thin layer.
摘要翻译：在蚀刻方法中，在掺杂有具有第一掺杂浓度的第一杂质的第一衬底的第一表面上形成薄层。该薄层掺杂有具有低于第一掺杂浓度的第二掺杂浓度的第二杂质。第二衬底形成在薄层上。抛光第一衬底的第二表面。使用包括氨和去离子水的清洁溶液清洁抛光的第一衬底。蚀刻清洁的第一衬底以暴露薄层。

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