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    • 5. 发明授权
    • High temperature sensor wafer for in-situ measurements in active plasma
    • 用于在有源等离子体中进行原位测量的高温传感器晶圆
    • US09222842B2
    • 2015-12-29
    • US13787178
    • 2013-03-06
    • Mei SunEarl JensenFarhat QuliStephen Sharratt
    • Mei SunEarl JensenFarhat QuliStephen Sharratt
    • H01L21/00G01K1/14G01K1/12
    • G01K1/14G01K1/12G01K2215/00
    • Aspects of the present disclosure disclose a component module in a process condition measuring device comprises a support for supporting a component, one or more legs configured to suspend the support in a spaced-apart relationship with respect to a substrate. An electrically conductive or low-resistivity semiconductor enclosure is configured to enclose the component, the support and the legs between the substrate and the enclosure. It is emphasized that this abstract is provided to comply with the rules requiring an abstract that will allow a searcher or other reader to quickly ascertain the subject matter of the technical disclosure. It is submitted with the understanding that it will not be used to interpret or limit the scope or meaning of the claims.
    • 本公开的方面公开了一种处理状态测量装置中的部件模块,包括用于支撑部件的支撑件,一个或多个腿部,其配置成以相对于基板间隔开的关系悬挂支撑件。 导电或低电阻率半导体外壳被配置为将部件,支撑件和支脚封闭在基板和外壳之间。 要强调的是,该摘要被提供以符合要求抽象的规则,允许搜索者或其他读者快速确定技术公开内容的主题。 提交它的理解是,它不会用于解释或限制权利要求的范围或含义。
    • 7. 发明申请
    • PROCESS CONDITION SENSING DEVICE AND METHOD FOR PLASMA CHAMBER
    • 过程状态感测装置和等离子体室的方法
    • US20110174777A1
    • 2011-07-21
    • US12691695
    • 2010-01-21
    • Earl JensenMei Sun
    • Earl JensenMei Sun
    • C23F1/00C23F1/08
    • H01J37/32954G01R19/0061H01J37/32H01J37/32917H01J37/32935H01L21/67069H01L21/67253H01L22/34
    • A sensing device for measuring a plasma process parameter in a plasma chamber for processing workpieces may include a substrate with one or more sensor embedded in the substrate. The substrate can have a surface made of substantially the same material as workpieces that are plasma processed in the plasma chamber. Each sensor can include a collector portion made of substantially the same material as the substrate surface. The collector portion includes a surface that is level with the surface of the substrate. Sensor electronics are embedded into the substrate and coupled to the collector portion. When the substrate surface is exposed to a plasma one or more signals resulting from the plasma can be measured with the sensor(s).
    • 用于测量用于处理工件的等离子体室中的等离子体工艺参数的感测装置可以包括具有嵌入在衬底中的一个或多个传感器的衬底。 基板可以具有由在等离子体室中等离子体处理的与工件基本相同的材料制成的表面。 每个传感器可以包括由与基底表面基本相同的材料制成的收集器部分。 集电器部分包括与衬底的表面平齐的表面。 传感器电子器件嵌入基板并耦合到收集器部分。 当衬底表面暴露于等离子体时,可以用传感器测量由等离子体产生的一个或多个信号。