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    • 4. 发明申请
    • Apparatus and Methods for Determining Overlay and Uses of Same
    • 用于确定叠加和使用的装置和方法
    • US20100005442A1
    • 2010-01-07
    • US12560229
    • 2009-09-15
    • Mark GhinovkerMichael E. AdelJorge PoplawskiJoel L. Seligson
    • Mark GhinovkerMichael E. AdelJorge PoplawskiJoel L. Seligson
    • G06F17/50
    • G06F17/5068G03F7/70633G06F2217/12Y02P90/265
    • Disclosed are techniques and apparatus are provided for determining overlay error or pattern placement error (PPE) across the field of a scanner which is used to pattern a sample, such as a semiconductor wafer or device. This determination is performed in-line on the product wafer or device. That is, the targets on which overlay or PPE measurements are performed are provided on the product wafer or device itself. The targets are either distributed across the field by placing the targets within the active area or by distributing the targets along the streets (the strips or scribe areas) which are between the dies of a field. The resulting overlay or PPE that is obtained from targets distributed across the field may then be used in a number of ways to improve the fabrication process for producing the sample. For instance, the resulting overlay or PPE may be used to more accurately predict device performance and yield, more accurately correct a deviating photolithography scanning tool, or determine wafer lot disposition.
    • 公开了提供用于确定扫描仪领域的重叠误差或图案布置误差(PPE)的技术和装置,其用于对样品(例如半导体晶片或器件)进行图案化。 该确定在产品晶片或器件上在线执行。 也就是说,在产品晶片或器件本身上提供执行覆盖或PPE测量的目标。 目标是通过将目标放置在活动区域​​内或通过在场的模具之间的街道(条带或划线区域)上分布目标来分布在场上。 然后可以以多种方式使用从分布在场上的目标获得的所得覆盖物或PPE,以改进用于生产样品的制造过程。 例如,所得覆盖层或PPE可用于更准确地预测设备性能和产量,更精确地校正偏离的光刻扫描工具,或确定晶片批次布置。
    • 5. 发明申请
    • APPARATUS AND METHODS FOR DETERMINING OVERLAY OF STRUCTURES HAVING ROTATIONAL OR MIRROR SYMMETRY
    • US20090224413A1
    • 2009-09-10
    • US12410317
    • 2009-03-24
    • Mark Ghinovker
    • Mark Ghinovker
    • H01L23/544
    • G01B11/272G01N21/4785G01N21/9501G03F7/70633H01L21/68H01L21/682H01L23/544Y10S438/975
    • Disclosed are overlay targets having flexible symmetry characteristics and metrology techniques for measuring the overlay error between two or more successive layers of such targets. In one embodiment, a target includes structures for measuring overlay error (or a shift) in both the x and y direction, wherein the x structures have a different center of symmetry (COS) than the y structures. In another embodiment, one of the x and y structures is invariant with a 180° rotation and the other one of the x and y structures has a mirror symmetry. In one aspect, the x and y structures together are variant with a 180° rotation. In yet another example, a target for measuring overlay in the x and/or y direction includes structures on a first layer having a 180 symmetry and structures on a second layer having mirror symmetry. In another embodiment, a target for determining overlay in the x and/or y direction includes structures on a first layer and structures on a second layer, wherein the structures on the first layer have a COS that is offset by a known amount from the COS of the structures on the second layer. In a specific implementation, any of the disclosed target embodiments may take the form of device structures. In a use case, device structures that have an inherent 180° rotational symmetry or a mirror symmetry in each of the first and second layers are used to measure overlay in a first layer and a second layer. Techniques for imaging targets with flexible symmetry characteristics and analyzing the acquired images to determine overlay or alignment error are disclosed.
    • 8. 发明授权
    • Thin overlay mark for imaging based metrology
    • 用于基于成像的计量学的薄叠加标记
    • US08513822B1
    • 2013-08-20
    • US12827499
    • 2010-06-30
    • Mark Ghinovker
    • Mark Ghinovker
    • H01L27/108
    • G03F7/70683G03F7/70633
    • A thin overlay structure for use in imaging based metrology is disclosed. The thin overlay structure may include a first structure and second structure, the first and second structures designed to have a common center of symmetry, both structures being invariant to a 180 degree rotation about the common center of symmetry, wherein a mark region defining the extent of the structures is characterized by a first direction and a second direction orthogonal to the first direction, a length of the mark region along the first direction being greater than a length of the mark region along the second direction.
    • 公开了一种用于基于成像的计量学的薄覆盖结构。 薄覆盖结构可以包括第一结构和第二结构,第一和第二结构被设计成具有共同的对称中心,两个结构不变地围绕公共对称中心旋转180度旋转,其中限定范围的标记区域 所述结构的特征在于与所述第一方向正交的第一方向和第二方向,所述标记区域沿着所述第一方向的长度大于所述标记区域沿着所述第二方向的长度。
    • 9. 发明授权
    • Overlay marks and methods of manufacturing such marks
    • 覆盖标记和制造这种标记的方法
    • US07879627B2
    • 2011-02-01
    • US12533295
    • 2009-07-31
    • Mark GhinovkerMichael AdelWalter D. MieherAdy LevyDan Wack
    • Mark GhinovkerMichael AdelWalter D. MieherAdy LevyDan Wack
    • G01R31/26H01L21/66
    • G03F7/70633G03F9/7076G06K9/00281G06T7/0004G06T7/33G06T2207/30148Y10S438/975
    • An overlay mark for determining the relative shift between two or more successive layers of a substrate and methods for using such overlay mark are disclosed. In one embodiment, the overlay mark includes at least one test pattern for determining the relative shift between a first and a second layer of the substrate in a first direction. The test pattern includes a first set of working zones and a second set of working zones. The first set of working zones are disposed on a first layer of the substrate and have at least two working zones diagonally opposed and spatially offset relative to one another. The second set of working zones are disposed on a second layer of the substrate and have at least two working zones diagonally opposed and spatially offset relative to one another. The first set of working zones are generally angled relative to the second set of working zones thus forming an “X” shaped test pattern.
    • 公开了用于确定衬底的两个或更多个连续层之间的相对位移的覆盖标记以及使用这种重叠标记的方法。 在一个实施例中,覆盖标记包括至少一个测试图案,用于在第一方向上确定基板的第一和第二层之间的相对移动。 测试模式包括第一组工作区和第二组工作区。 第一组工作区域设置在基板的第一层上,并且具有相对于彼此对角地相对且空间上偏移的至少两个工作区域。 所述第二组工作区域设置在所述基板的第二层上,并且具有至少两个工作区域,所述至少两个工作区域相对于彼此对角地相对并且在空间上偏移。 第一组工作区域通常相对于第二组工作区域成角度,从而形成“X”形测试图案。