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    • 6. 发明授权
    • Hitless switch for high-density integrated optics
    • 无密钥开关用于高密度集成光学器件
    • US07424181B2
    • 2008-09-09
    • US11041350
    • 2005-01-24
    • Eleanor L. Haus, legal representativeMilos PopovicMichael R. WattsChee Wei WongLionel C. Kimerling
    • Hermann A. Haus
    • G02B6/12
    • H04J14/0206G02B6/125G02B6/3536G02B6/3546G02B6/3562G02B6/357G02B6/3576G02B6/3584G02B6/3596G02B2006/12145G02B2006/12159G02F1/3132G02F1/3136H04J14/0204H04J14/0212
    • An optical device includes a first and a second splitting device. Each of the first and second splitting devices have respective first and second input ports, respective first and second output ports, and a respective transfer matrix. A first optical waveguide is optically coupled to the first output port of the first splitting device and the first input port of the second splitting device. A second optical waveguide is optically coupled to the second output port of the first splitting device and the second input port of the second splitting device. The first and second optical waveguides are configured to introduce a phase shift of π radians to the optical radiation propagating through the first optical waveguide with respect to the optical radiation propagating through the second optical waveguide. The transfer matrix of the second splitting device is the diagonal transpose of the transfer matrix of the first splitting device and the transfer matrix of the second splitting device is substantially different from the transfer matrix of the first splitting device.
    • 光学装置包括第一和第二分割装置。 第一和第二分离装置中的每一个具有相应的第一和第二输入端口,相应的第一和第二输出端口以及相应的传输矩阵。 第一光波导光耦合到第一分离装置的第一输出端口和第二分离装置的第一输入端口。 第二光波导光学耦合到第一分离装置的第二输出端口和第二分离装置的第二输入端口。 第一和第二光波导被配置为相对于通过第二光波导传播的光辐射,将pi弧度的相移引入通过第一光波导传播的光辐射。 第二分割装置的传送矩阵是第一分割装置的传送矩阵的对角线转置,并且第二分割装置的传送矩阵与第一分割装置的传送矩阵基本不同。
    • 10. 发明授权
    • Acoustic wave device
    • 声波装置
    • US4342970A
    • 1982-08-03
    • US233320
    • 1981-02-11
    • John MelngailisHermann A. HausAna L. Lattes
    • John MelngailisHermann A. HausAna L. Lattes
    • H03H9/02H03H9/25H03H9/64
    • H03H9/0296H03H9/02653H03H9/02622
    • A surface acoustic wave (SAW) device including a crystal substrate having two substantially planar surfaces and at least one SAW-to-plate mode coupler positioned on one of the surfaces. The SAW-to-plate mode coupler includes a plurality of parallel, linear surface perturbations. The surface perturbations are adapted to convert a portion of an incident SAW to a bulk acoustic wave (BAW). In addition, the coupler is adapted to convert a portion of an incident BAW (from the crystal bulk region) to a SAW at those surface perturbations. In addition, the planar surfaces of the crystal substrate are adapted to reflect portions of incident BAW's. The coupler is positioned with respect to the crystal characteristics so that SAW's and BAW's resonantly interact at the coupler. In alternative configurations, a second SAW-to-plate mode coupler is positioned on the second surface of the crystal substrate. This second surface coupler also is adapted to convert a portion of an incident SAW to a bulk acoustic wave (BAW) at a plurality of parallel surface perturbations, and to convert a portion of an incident BAW to a SAW at those perturbations. The couplers are positioned in view of the crystal characteristics so that the BAW's and SAW's resonantly interact at the couplers.
    • 一种表面声波(SAW)装置,包括具有两个基本平坦的表面的晶体基板和位于其中一个表面上的至少一个SAW至板模式耦合器。 SAW至板模式耦合器包括多个平行的线性表面扰动。 表面扰动适于将入射SAW的一部分转换为体声波(BAW)。 另外,耦合器适于将入射的BAW(从晶体块区域)的一部分转换成在那些表面扰动处的SAW。 此外,晶体衬底的平面表面适于反映事件BAW的部分。 耦合器相对于晶体特性定位,使得SAW和BAW在耦合器处共振地相互作用。 在替代配置中,第二SAW至板模式耦合器位于晶体衬底的第二表面上。 该第二表面耦合器还适于在多个平行的表面扰动下将入射的SAW的一部分转换为体声波(BAW),并且在这些扰动下将入射的BAW的一部分转换为SAW。 鉴于晶体特性,耦合器被定位,使得BAW和SAW在耦合器处共振地相互作用。