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1. 发明授权

US07335942B2 Field effect transistor sensor 有权
标题翻译：场效应晶体管传感器
公开(公告)号：US07335942B2
公开(公告)日：2008-02-26
申请号：US10495632
申请日：2002-11-08
申请人： Klaus Edinger , Ivajlo Rangelow , Piotr Grabiec , John Melngailis
发明人： Klaus Edinger , Ivajlo Rangelow , Piotr Grabiec , John Melngailis
IPC分类号： H01L29/72
CPC分类号： G01Q60/30 , G01N27/82 , G01Q70/10 , G01R1/07 , G01R33/06
摘要： The invention relates to a sensor, especially for the probe of a screen probe microscope, for examining probe surfaces (40) or areas adjacent to the sensor, comprising at least one field effect transistor (FET) made of at least one semiconductor material. The invention also relates to a Hall sensor made of at least one semiconductor material for detecting magnetic fields and whose lateral resolution capacity can be electrically adjusted, in addition to a semiconductor electrode (28) whose electrode surface can be electrically adjusted.
摘要翻译：本发明涉及一种用于检查探针表面（40）或与传感器相邻的区域的筛选探针显微镜的探头的传感器，其包括由至少一种半导体材料制成的至少一个场效应晶体管（FET）。本发明还涉及一种由用于检测磁场并且其横向分辨率能够被电调节的至少一种半导体材料制成的霍尔传感器，以及电极表面可以被电调节的半导体电极（28）。

2. 发明授权

US5362606A Positive resist pattern formation through focused ion beam exposure and surface barrier silylation 失效
标题翻译：通过聚焦离子束暴露和表面阻挡甲硅烷基化形成正的抗蚀剂图案
公开(公告)号：US5362606A
公开(公告)日：1994-11-08
申请号：US926971
申请日：1992-08-07
申请人： Mark A. Hartney , John Melngailis , David C. Shaver
发明人： Mark A. Hartney , John Melngailis , David C. Shaver
IPC分类号： G03F7/26 , G03F7/38
CPC分类号： G03F7/265
摘要： A resist exposed to a micron or sub-micron pattern of highly absorbed ion beams forms a highly crosslinked barrier layer in the exposed regions of the resist surface. The complementary surface regions are silylated in a silicon-containing reagent, and the exposed regions are then removed by a plasma etch. Pattern definition is enhanced by limiting the exposure and the silylation to the surface of the resist. The process allows feature definition below 1000 Angstroms using a relatively inexpensive single element low energy ion source.
摘要翻译：暴露于高吸收离子束的微米或亚微米图案的抗蚀剂在抗蚀剂表面的暴露区域中形成高度交联的阻挡层。互补的表面区域在含硅试剂中被甲硅烷基化，然后通过等离子体蚀刻除去暴露的区域。通过限制抗蚀剂表面的曝光和甲硅烷基化来增强图案定义。该过程允许使用相对便宜的单元件低能量离子源的特征定义低于1000埃。

3. 发明申请

US20050224590A1 Method and system for fabricating integrated circuit chips with unique identification numbers 审中-公开
标题翻译：用于制造具有唯一识别号的集成电路芯片的方法和系统
公开(公告)号：US20050224590A1
公开(公告)日：2005-10-13
申请号：US11104517
申请日：2005-04-13
申请人： John Melngailis , William Bandy
发明人： John Melngailis , William Bandy
IPC分类号： G06K1/12 , G06K19/06
CPC分类号： G06K1/126
摘要： A method, system, and apparatus for writing data to integrated circuits is described. A charged particle source supplies a beam of charged particles. A wafer plate mounts a wafer having a plurality of transistors distributed among an array of integrated circuits on a surface. A beam column receives the beam of charged particles and selectively passes the beam of charged particles to the surface of the wafer. The selectively passed beam of charged particles irradiates selected transistors of the plurality of transistors to cause the selected transistors to permanently change from a first state to a second state. The second state can be a fully “on” state, a fully “off” state, or a state in between for the selected transistors. Each integrated circuit of the array includes at least one of the selected transistors and at least one non-selected transistor. A combination of selected and non-selected transistors of the integrated circuit corresponds to data for the integrated circuit.
摘要翻译：描述了将数据写入集成电路的方法，系统和装置。带电粒子源提供带电粒子束。晶片板在表面上安装具有分布在集成电路阵列中的多个晶体管的晶片。束柱接收带电粒子束并选择性地将带电粒子束传递到晶片的表面。选择通过的带电粒子束照射多个晶体管中的选定晶体管，以使所选择的晶体管永久地从第一状态改变到第二状态。第二状态可以是完全“接通”状态，完全“断开”状态，或者是所选晶体管之间的状态。阵列的每个集成电路包括至少一个所选择的晶体管和至少一个未选择的晶体管。集成电路的选定晶体管和非选择晶体管的组合对应于集成电路的数据。

4. 发明授权

US5104684A Ion beam induced deposition of metals 失效
标题翻译：离子束诱导金属沉积
公开(公告)号：US5104684A
公开(公告)日：1992-04-14
申请号：US528861
申请日：1990-05-25
申请人： Tao Tao , John Melngailis
发明人： Tao Tao , John Melngailis
IPC分类号： C23C16/04 , C23C16/18 , C23C16/48
CPC分类号： H01L21/76802 , C23C16/047 , C23C16/18 , C23C16/486 , H01L21/76838 , H01L21/76879 , H01L21/76892 , H01J2237/31749
摘要： Metal is deposited in lines of submicron width by scanning a focused ion beam along a substrate in the presence a vapor of a precursor platinum compound. High deposition rates and steep walls may be obtained by milling a cavity or trench with the focused beam and then locally applying the precursor vapor while scanning of the beam continues. Platinum containing features deposited in this way extend horizontally between wires, or vertically between layers to form conductive interconnects in integrated circuits, and also form pattern repairs in x-ray masks. The platinum chemistry is compatible with silicon wafer processing.
摘要翻译：通过在前体铂化合物的蒸气存在的情况下沿着衬底扫描聚焦的离子束，将金属沉积在亚微米宽度的线上。通过用聚焦光束研磨空腔或沟槽，然后在扫描光束的同时局部施加前体蒸汽，可以获得高沉积速率和陡峭的壁。以这种方式沉积的含白金的特征在导线之间水平延伸，或者在层之间垂直延伸以在集成电路中形成导电互连，并且还在x射线掩模中形成图案修复。铂化学与硅片加工兼容。

5. 发明授权

US4342970A Acoustic wave device 失效
标题翻译：声波装置
公开(公告)号：US4342970A
公开(公告)日：1982-08-03
申请号：US233320
申请日：1981-02-11
申请人： John Melngailis , Hermann A. Haus , Ana L. Lattes
发明人： John Melngailis , Hermann A. Haus , Ana L. Lattes
IPC分类号： H03H9/02 , H03H9/25 , H03H9/64
CPC分类号： H03H9/0296 , H03H9/02653 , H03H9/02622
摘要： A surface acoustic wave (SAW) device including a crystal substrate having two substantially planar surfaces and at least one SAW-to-plate mode coupler positioned on one of the surfaces. The SAW-to-plate mode coupler includes a plurality of parallel, linear surface perturbations. The surface perturbations are adapted to convert a portion of an incident SAW to a bulk acoustic wave (BAW). In addition, the coupler is adapted to convert a portion of an incident BAW (from the crystal bulk region) to a SAW at those surface perturbations. In addition, the planar surfaces of the crystal substrate are adapted to reflect portions of incident BAW's. The coupler is positioned with respect to the crystal characteristics so that SAW's and BAW's resonantly interact at the coupler. In alternative configurations, a second SAW-to-plate mode coupler is positioned on the second surface of the crystal substrate. This second surface coupler also is adapted to convert a portion of an incident SAW to a bulk acoustic wave (BAW) at a plurality of parallel surface perturbations, and to convert a portion of an incident BAW to a SAW at those perturbations. The couplers are positioned in view of the crystal characteristics so that the BAW's and SAW's resonantly interact at the couplers.
摘要翻译：一种表面声波（SAW）装置，包括具有两个基本平坦的表面的晶体基板和位于其中一个表面上的至少一个SAW至板模式耦合器。 SAW至板模式耦合器包括多个平行的线性表面扰动。表面扰动适于将入射SAW的一部分转换为体声波（BAW）。另外，耦合器适于将入射的BAW（从晶体块区域）的一部分转换成在那些表面扰动处的SAW。此外，晶体衬底的平面表面适于反映事件BAW的部分。耦合器相对于晶体特性定位，使得SAW和BAW在耦合器处共振地相互作用。在替代配置中，第二SAW至板模式耦合器位于晶体衬底的第二表面上。该第二表面耦合器还适于在多个平行的表面扰动下将入射的SAW的一部分转换为体声波（BAW），并且在这些扰动下将入射的BAW的一部分转换为SAW。鉴于晶体特性，耦合器被定位，使得BAW和SAW在耦合器处共振地相互作用。

6. 发明申请

US20050062116A1 Field effect transistor sensor 有权
标题翻译：场效应晶体管传感器
公开(公告)号：US20050062116A1
公开(公告)日：2005-03-24
申请号：US10495632
申请日：2002-11-08
申请人： Klaus Edinger , Ivajlo Rangelow , Grabiec Piotr , John Melngailis
发明人： Klaus Edinger , Ivajlo Rangelow , Grabiec Piotr , John Melngailis
IPC分类号： G01N27/82 , G01Q60/30 , G01Q70/10 , G01R1/07 , G01R33/06 , H01L29/76 , H01L29/94
CPC分类号： G01Q60/30 , G01N27/82 , G01Q70/10 , G01R1/07 , G01R33/06
摘要： The invention relates to a sensor, especially for the probe of a screen probe microscope, for examining probe surfaces (40) or areas adjacent to the sensor, comprising at least one field effect transistor (FET) made of at least one semiconductor material. The invention also relates to a hall sensor made of at least one semiconductor material for detecting magnetic fields and whose lateral resolution capacity can be electrically adjusted, in addition to a semiconductor electrode (28) whose electrode surface can be electrically adjusted.
摘要翻译：本发明涉及一种用于检查探针表面（40）或与传感器相邻的区域的筛选探针显微镜的探头的传感器，其包括由至少一种半导体材料制成的至少一个场效应晶体管（FET）。本发明还涉及一种由用于检测磁场的至少一种半导体材料制成的霍尔传感器，并且其电位调节的电极表面的半导体电极（28）可以进行电位调整。

7. 发明授权

US06309934B1 Fully self-aligned high speed low power MOSFET fabrication 失效
标题翻译：完全自对准的高速低功率MOSFET制造
公开(公告)号：US06309934B1
公开(公告)日：2001-10-30
申请号：US09508925
申请日：2000-01-06
申请人： Marty Peckerar , Weizhong Wang , John Melngailis
发明人： Marty Peckerar , Weizhong Wang , John Melngailis
IPC分类号： H01L21336
CPC分类号： H01L29/66575 , H01L21/0275 , H01L21/28123 , H01L21/823412 , H01L29/66537
摘要： Channel doping and gate lithography are simulatneously performed by focusing an ion beam into the wafer through a positive or negative photoresist that is sensitive to the ion beam. Additional fabrication is then performed to provide a gate that is self-aligned with the doped channel.
摘要翻译：通过对离子束敏感的正或负光致抗蚀剂将离子束聚焦到晶片中来模拟通道掺杂和栅极光刻。然后执行另外的制造以提供与掺杂沟道自对准的栅极。

8. 发明授权

US4268808A Acoustic wave device 失效
标题翻译：声波装置
公开(公告)号：US4268808A
公开(公告)日：1981-05-19
申请号：US40667
申请日：1979-05-21
申请人： John Melngailis
发明人： John Melngailis
IPC分类号： H03H9/25 , H03H3/08 , H03H9/02 , H03H9/64 , H03H9/54
CPC分类号： H03H9/02653 , H03H9/02622 , H03H9/0296
摘要： A surface acoustic wave (SAW) device including a crystal substrate having two substantially planar surfaces and at least one SAW-to-plate mode coupler positioned on one of the surfaces. The SAW-to-plate mode coupler includes a plurality of parallel, linear surface perturbations. The surface perturbations are adapted to convert a portion of an incident SAW to a bulk acoustic wave (BAW). In addition, the coupler is adapted to convert a portion of an incident BAW (from the crystal bulk region) to a SAW at those surface perturbations. In addition, the planar surfaces of the crystal substrate are adapted to reflect portions of incident BAW's. The coupler is positioned with respect to the crystal characteristics so that SAW's and BAW's resonantly interact at the coupler. In alternative configurations, a second SAW-to-plate mode coupler is positioned on the second surface of the crystal substrate. This second surface coupler also is adapted to convert a portion of an incident SAW to a bulk acoustic wave (BAW) at a plurality of parallel surface perturbations, and to convert a portion of an incident BAW to a SAW at those perturbations. The couplers are positioned in view of the crystal characteristics so that the BAW's and SAW's resonantly interact at the couplers.
摘要翻译：一种表面声波（SAW）装置，包括具有两个基本平坦的表面的晶体基板和位于其中一个表面上的至少一个SAW至板模式耦合器。 SAW至板模式耦合器包括多个平行的线性表面扰动。表面扰动适于将入射SAW的一部分转换为体声波（BAW）。另外，耦合器适于将入射的BAW（从晶体块区域）的一部分转换成在那些表面扰动处的SAW。此外，晶体衬底的平面表面适于反映事件BAW的部分。耦合器相对于晶体特性定位，使得SAW和BAW在耦合器处共振地相互作用。在替代配置中，第二SAW至板模式耦合器位于晶体衬底的第二表面上。该第二表面耦合器还适于在多个平行的表面扰动下将入射的SAW的一部分转换为体声波（BAW），并且在这些扰动下将入射的BAW的一部分转换为SAW。鉴于晶体特性，耦合器被定位，使得BAW和SAW在耦合器处共振地相互作用。

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