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1. 发明授权

US5308796A Fabrication of electronic devices by electroless plating of copper onto a metal silicide 失效
标题翻译：通过将铜电镀到金属硅化物上来制造电子器件
公开(公告)号：US5308796A
公开(公告)日：1994-05-03
申请号：US053840
申请日：1993-04-27
申请人： Leonard C. Feldman , Gregg S. Higashi , Cecilia Y. Mak , Barry Miller
发明人： Leonard C. Feldman , Gregg S. Higashi , Cecilia Y. Mak , Barry Miller
IPC分类号： H01L21/28 , C23C18/31 , H01L21/288 , H01L21/768 , H01L23/522 , H01L21/441
CPC分类号： H01L21/288 , H01L21/76879
摘要： It has been found that selective metallization in integrated circuits is expeditiously achieved through a copper plating procedure. In this process, palladium silicide is used as a catalytic surface and an electroless plating bath is employed to introduce copper plating only in regions where the silicide is present. Use of this procedure yields superior filling of vias and windows with excellent conductivity.
摘要翻译：已经发现，通过镀铜工艺快速实现集成电路中的选择性金属化。在该方法中，使用硅化钯作为催化剂表面，并且使用化学镀浴仅在存在硅化物的区域中引入镀铜。使用这种方法可以获得优良的导电性通孔和窗户的填充。

2. 发明授权

US5472516A Process and apparatus for semiconductor device fabrication 失效
标题翻译：用于半导体器件制造的工艺和装置
公开(公告)号：US5472516A
公开(公告)日：1995-12-05
申请号：US228336
申请日：1994-04-15
申请人： Karrie J. Hanson , Gregg S. Higashi , Joseph M. Rosamilia
发明人： Karrie J. Hanson , Gregg S. Higashi , Joseph M. Rosamilia
IPC分类号： B08B3/08 , H01L21/304 , H01L21/306 , B08B7/04
CPC分类号： H01L21/02052
摘要： A method and apparatus for cleaning substrates in a process for device fabrication is disclosed. An aqueous solution of hydrogen peroxide and ammonium hydroxide is used to clean the substrates. The concentration of hydrogen peroxide and ammonium hydroxide in the cleaning solution is maintained at a certain level. The life of the cleaning solution is extended by the process. By maintaining the concentrations of the hydrogen peroxide and ammonium hydroxide in the solution within a desired range, the process also provides a cleaning solution that effectively cleans the substates throughout the entire time the solution is used to clean the substrates. The apparatus monitors certain solution parameters such as the pH and the conductivity of the cleaning solution and adds hydrogen peroxide and/or ammonium hydroxide to the cleaning solution to maintain the parameters, and thus the concentration of hydrogen peroxide and ammonium hydroxide, at desired levels.
摘要翻译：公开了一种用于在器件制造过程中清洁衬底的方法和设备。使用过氧化氢和氢氧化铵的水溶液来清洗底物。清洗液中过氧化氢和氢氧化铵的浓度保持在一定水平。清洁液的使用寿命延长了。通过将溶液中的过氧化氢和氢氧化铵的浓度保持在所需范围内，该方法还提供了清洁溶液，其在整个溶液用于清洁基底的整个时间内有效地清洗了子状态。该装置监测某些溶液参数，例如清洁溶液的pH和电导率，并向清洗溶液中加入过氧化氢和/或氢氧化铵，以保持所需参数，从而将过氧化氢和氢氧化铵的浓度保持在所需的水平。

3. 发明授权

US6140187A Process for forming metal oxide semiconductors including an in situ furnace gate stack with varying silicon nitride deposition rate 有权
标题翻译：用于形成金属氧化物半导体的方法，包括具有改变的氮化硅沉积速率的原位炉栅叠层
公开(公告)号：US6140187A
公开(公告)日：2000-10-31
申请号：US205414
申请日：1998-12-02
申请人： Damon K. DeBusk , Gregg S. Higashi , Pradip K. Roy , Nancy Xianghong Zhao
发明人： Damon K. DeBusk , Gregg S. Higashi , Pradip K. Roy , Nancy Xianghong Zhao
IPC分类号： H01L21/8238 , H01L21/336
CPC分类号： H01L21/823842 , H01L21/823857 , Y10S438/954
摘要： The present invention provides a process for forming a dopant barrier layer in a gate stack in a semiconductor device. In one advantageous embodiment, the process includes forming a gate oxide on a semiconductor substrate, forming a gate layer on the gate oxide, and forming an ultra thin (less than about 2.5 nm) silicon nitride dopant barrier layer between the gate oxide and the gate layer. The dopant barrier layer provides an excellent barrier to inhibit dopant diffusion through the gate oxide and into the p-channel during the formation of the source/drain areas. Moreover, the formation of this dopant barrier layer and the formation of the gate layer can easily be achieved in a single furnace, if so desired.
摘要翻译：本发明提供了在半导体器件中的栅叠层中形成掺杂剂阻挡层的工艺。在一个有利的实施例中，该工艺包括在半导体衬底上形成栅极氧化物，在栅极氧化物上形成栅极层，并在栅极氧化物和栅极之间形成超薄（小于约2.5nm）的氮化硅掺杂剂阻挡层层。在形成源/漏区域期间，掺杂剂阻挡层提供了阻止掺杂剂扩散通过栅极氧化物并进入p沟道的优异势垒。此外，如果需要，可以在单个炉中容易地实现该掺杂剂阻挡层的形成和栅极层的形成。

4. 发明授权

US5091767A Article comprising a lattice-mismatched semiconductor heterostructure 失效
标题翻译：包含晶格失配的半导体异质结构的文章
公开(公告)号：US5091767A
公开(公告)日：1992-02-25
申请号：US671276
申请日：1991-03-18
申请人： John C. Bean , Gregg S. Higashi , Robert Hull , Justin L. Peticolas
发明人： John C. Bean , Gregg S. Higashi , Robert Hull , Justin L. Peticolas
IPC分类号： H01L21/20 , H01L29/04 , H01L29/32
CPC分类号： H01L29/32 , H01L29/045
摘要： Disclosed are strained layer heteroepitaxial structures (e.g., GeSi/Si) that can have low threading dislocation density as well as a substantially planar surface. Furthermore, a large fraction (e.g., >90%) of the total surface are of the structure can be available for device processing. These advantageous features are achieved through utilization of novel "dislocation sinks" on or in the substrate whose height parameter h is less than or about equal to the thickness of the strained heteroepitaxial layer on the substrate. Exemplarily, h.gtoreq.h.sub.c, where h.sub.c is the critical thickness associated with misfit dislocation generation in the substrate/overlayer combination.

5. 发明授权

US5578273A Apparatus for continuously controlling the peroxide and ammonia concentration in a bath 失效
标题翻译：用于连续控制浴中的过氧化物和氨浓度的装置
公开(公告)号：US5578273A
公开(公告)日：1996-11-26
申请号：US516712
申请日：1995-08-18
申请人： Karrie J. Hanson , Gregg S. Higashi , Joseph M. Rosamilia
发明人： Karrie J. Hanson , Gregg S. Higashi , Joseph M. Rosamilia
IPC分类号： B08B3/08 , H01L21/304 , H01L21/306 , G05D7/00
CPC分类号： H01L21/02052
摘要： A method and apparatus for cleaning substrates in a process for device fabrication is disclosed. An aqueous solution of hydrogen peroxide and ammonium hydroxide is used to clean the substrates. The concentration of hydrogen peroxide and ammonium hydroxide in the cleaning solution is maintained at a certain level. The life of the cleaning solution is extended by the process. By maintaining the concentrations of the hydrogen peroxide and ammonium hydroxide in the solution within a desired range, the process also provides a cleaning solution that effectively cleans the substates throughout the entire time the solution is used to clean the substrates. The apparatus monitors certain solution parameters such as the pH and the conductivity of the cleaning solution and adds hydrogen peroxide and/or ammonium hydroxide to the cleaning solution to maintain the parameters, and thus the concentration of hydrogen peroxide and ammonium hydroxide, at desired levels.
摘要翻译：公开了一种用于在器件制造过程中清洁衬底的方法和设备。使用过氧化氢和氢氧化铵的水溶液来清洗底物。清洗液中过氧化氢和氢氧化铵的浓度保持在一定水平。清洁液的使用寿命延长了。通过将溶液中的过氧化氢和氢氧化铵的浓度保持在所需范围内，该方法还提供了清洁溶液，其在整个溶液用于清洁基底的整个时间内有效地清洗了子状态。该装置监测某些溶液参数，例如清洁溶液的pH和电导率，并向清洗溶液中加入过氧化氢和/或氢氧化铵，以保持参数，从而将过氧化氢和氢氧化铵的浓度保持在所需的水平。

6. 发明授权

US4701347A Method for growing patterned metal layers 失效
标题翻译：生长图案化金属层的方法
公开(公告)号：US4701347A
公开(公告)日：1987-10-20
申请号：US853676
申请日：1986-04-18
申请人： Gregg S. Higashi
发明人： Gregg S. Higashi
IPC分类号： C23C16/06 , C23C16/48 , C23C20/04 , H01L21/285 , H01L21/3205 , B05D3/06
CPC分类号： H01L21/32051 , C23C16/483 , H01L21/28512 , H01L21/28575 , Y10S438/903
摘要： Patterned metal growth is obtained on a substrate by illuminating the substrate in the presence of a metal containing molecule adsorbed on the substrate. After initial illumination, the photoreacted molecules catalyze further metal growth without further illumination.
摘要翻译：通过在吸附在基材上的含金属分子的存在下照射基板，在基板上获得图案化的金属生长。在初始照射之后，光反应的分子催化进一步的金属生长而不进一步照明。

7. 发明申请

US20090104342A1 PHOTOVOLTAIC FABRICATION PROCESS MONITORING AND CONTROL USING DIAGNOSTIC DEVICES 审中-公开
标题翻译：使用诊断设备的光伏制造过程监控和控制
公开(公告)号：US20090104342A1
公开(公告)日：2009-04-23
申请号：US12212594
申请日：2008-09-17
申请人： Dapeng Wang , Michel R. Frei , Tzay-Fa (Jeff) Su , Vicky Svidenko , Gregg S. Higashi
发明人： Dapeng Wang , Michel R. Frei , Tzay-Fa (Jeff) Su , Vicky Svidenko , Gregg S. Higashi
IPC分类号： B05D5/12 , B05C9/12 , G01R31/26
CPC分类号： H01L31/186 , B23K26/0622 , B23K26/082 , B23K26/36 , B23K26/40 , B23K2101/40 , B23K2103/50 , Y02E10/50 , Y02P70/521
摘要： The formation of diagnostic devices on the same substrate used to fabricate a photovoltaic (PV) cell is described. Such devices, also referred to as process diagnostic vehicles (PDVs), are configured for in-line monitoring of electrical characteristics of PV cell features and are formed on the substrate using the same process steps for PV cell fabrication. The data collected via the PDVs can be used to tune or optimize subsequent PV cell fabrication, i.e., used as feedback for the fabrication process. Alternatively, the data collected via PDVs can be fed forward in the fabrication process, so that later process steps performed on a PV cell substrate can be modified to compensate for issues detected on the PV cell substrate via the PDVs.
摘要翻译：描述了用于制造光伏（PV）电池的同一衬底上的诊断装置的形成。也称为过程诊断车辆（PDV）的这种装置被配置为在线监测PV电池特征的电特性，并且使用与PV电池制造相同的工艺步骤在衬底上形成。通过PDV收集的数据可用于调整或优化随后的PV电池制造，即用作制造工艺的反馈。或者，可以通过PDV收集的数据在制造过程中向前馈送，使得可以修改在PV电池基板上执行的后续处理步骤，以经由PDV来补偿在PV电池基板上检测到的问题。

8. 发明授权

US5096840A Method of making a polysilicon emitter bipolar transistor 失效
标题翻译：制造多晶硅发射双极晶体管的方法
公开(公告)号：US5096840A
公开(公告)日：1992-03-17
申请号：US567835
申请日：1990-08-15
申请人： John C. Bean , Gregg S. Higashi , Bahram Jalali-Farahani , Clifford A. King
发明人： John C. Bean , Gregg S. Higashi , Bahram Jalali-Farahani , Clifford A. King
IPC分类号： H01L29/73 , H01L21/225 , H01L21/331 , H01L29/732
CPC分类号： H01L29/66272 , H01L21/2253 , Y10S148/01
摘要： The inventive method of making a poly-Si emitter transistor (PET) comprises opening an emitter window in a dielectric (typically SiO.sub.2) layer, and depositing onto the thus exposed surface and/or into the single crystal Si material that underlies the exposed surface at least one atomic species. This deposition step is following by the conventional poly-Si deposition, dopant implantation and "drive-in". In a currently preferred embodiment the novel deposition step comprises a low dose, low energy As implantation (5.times.10.sup.13 -2.times.10.sup.15 atoms/cm.sup.2, 0.1-5 keV). The novel method can result in significantly improved device characteristics, e.g., in a doubling of h.sub.FE, as compared to analogous prior art PETs.

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