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1. 发明申请

US20080094320A1 Display Device and Driving Method Thereof 有权
标题翻译：显示装置及其驱动方法
公开(公告)号：US20080094320A1
公开(公告)日：2008-04-24
申请号：US11696309
申请日：2007-04-04
申请人： Kunjal Parikh , Kyuha Chung , Nam-Deog Kim , Beohm-Rock Choi , Joon-Chul Goh , Joon-Hoo Choi
发明人： Kunjal Parikh , Kyuha Chung , Nam-Deog Kim , Beohm-Rock Choi , Joon-Chul Goh , Joon-Hoo Choi
IPC分类号： G09G3/30
CPC分类号： G09G3/3233 , G09G3/3266 , G09G2300/043 , G09G2300/0819 , G09G2300/0842 , G09G2310/0254 , G09G2310/0283 , G09G2320/0261 , G09G2320/043 , G09G2320/048
摘要： A display device and a method of driving the same, win which the display device includes a light emitting element and a driving transistor supplying a driving current to the light emitting element, and in which one of a data voltage or a reverse bias voltage is applied to the driving transistor in an alternating manner, and the reverse bias voltage is an AC voltage.
摘要翻译：显示装置及其驱动方法，其中显示装置包括发光元件和向发光元件提供驱动电流的驱动晶体管，并且其中施加数据电压或反向偏置电压中的一种以交替方式耦合到驱动晶体管，并且反向偏置电压是AC电压。

2. 发明授权

US07965263B2 Display device and driving method thereof 有权
标题翻译：显示装置及其驱动方法
公开(公告)号：US07965263B2
公开(公告)日：2011-06-21
申请号：US11696309
申请日：2007-04-04
申请人： Kunjal Parikh , Kyuha Chung , Nam-Deog Kim , Beohm-Rock Choi , Joon-Chul Goh , Joon-Hoo Choi
发明人： Kunjal Parikh , Kyuha Chung , Nam-Deog Kim , Beohm-Rock Choi , Joon-Chul Goh , Joon-Hoo Choi
IPC分类号： G06F3/038 , G09G3/30 , G09G5/00 , G09G3/10
CPC分类号： G09G3/3233 , G09G3/3266 , G09G2300/043 , G09G2300/0819 , G09G2300/0842 , G09G2310/0254 , G09G2310/0283 , G09G2320/0261 , G09G2320/043 , G09G2320/048
摘要： A display device and a method of driving the same, win which the display device includes a light emitting element and a driving transistor supplying a driving current to the light emitting element, and in which one of a data voltage or a reverse bias voltage is applied to the driving transistor in an alternating manner, and the reverse bias voltage is an AC voltage.
摘要翻译：显示装置及其驱动方法，其中显示装置包括发光元件和向发光元件提供驱动电流的驱动晶体管，并且其中施加数据电压或反向偏置电压中的一种以交替的方式连接到驱动晶体管，并且反向偏置电压是AC电压。

3. 发明授权

US07075601B2 Thin film transistor array for a liquid crystal display having a data line cross-connection 有权
标题翻译：用于具有数据线交叉连接的液晶显示器的薄膜晶体管阵列
公开(公告)号：US07075601B2
公开(公告)日：2006-07-11
申请号：US10470116
申请日：2002-02-26
申请人： Mun-Pyo Hong , Wan-Shick Hong , Nam-Seok Roh , Kyuha Chung , Chong-Chul Chai
发明人： Mun-Pyo Hong , Wan-Shick Hong , Nam-Seok Roh , Kyuha Chung , Chong-Chul Chai
IPC分类号： G02F1/1335
CPC分类号： G02F1/133514 , G02F2201/52
摘要： Pixels of red, blue and green are sequentially arranged in the row direction. The red and green pixels are alternately arranged in the column while the blue pixels being arranged between the neighboring red and each blue pixel is surrounded by the four red and green pixels. Gate lines are arranged at respective pixel rows. Data lines cross over the gate lines in an insulating manner and are arranged at the respective pixel columns. Pixel electrodes and thin film transistor are arranged at the respective pixels. At a predetermined pixel unit, the data lines to the two blue pixel are connected to each other. The pixel electrodes are overlapped with the gate lines or data lines via a passivation layer of low dielectric organic material or insulating material such as SiOC, SiOF.
摘要翻译：红色，蓝色和绿色的像素依次排列在行方向。红色和绿色像素交替排列在列中，而布置在相邻红色和每个蓝色像素之间的蓝色像素被四个红色和绿色像素包围。栅极线被布置在各个像素行。数据线以绝缘方式跨越栅极线并且布置在各个像素列处。像素电极和薄膜晶体管布置在各个像素处。在预定像素单元处，到两个蓝色像素的数据线彼此连接。像素电极经由低介电有机材料的钝化层或绝缘材料如SiOC，SiOF与栅极线或数据线重叠。

4. 发明授权

US06313045B1 Nanoporous silicone resins having low dielectric constants and method for preparation 有权
标题翻译：具有低介电常数的纳米多孔硅树脂及其制备方法
公开(公告)号：US06313045B1
公开(公告)日：2001-11-06
申请号：US09459331
申请日：1999-12-13
申请人： Bianxiao Zhong , Russell Keith King , Kyuha Chung , Shizhong Zhang
发明人： Bianxiao Zhong , Russell Keith King , Kyuha Chung , Shizhong Zhang
IPC分类号： H01L2131
CPC分类号： C08G77/02 , C08G77/12 , C09D183/04 , Y10S977/70 , Y10S977/831 , Y10S977/891
摘要： Nanoporous silicone resins and silicone resin films having low dielectric constants and a method for preparing such nanoporous silicone resins. The silicone resin comprises the reaction product of a mixture comprising (A) 15-70 mol % of a tetraalkoxysilane described by formula Si(OR1)4, where each R1 is an independently selected alkyl group comprising 1 to about 6 carbon atoms, (B) 12 to 60 mol % of an organosilane described by formula R4SiX3, where R4 is selected from the group consisting of alkyl groups comprising 1 to about 6 carbon atoms and phenyl and each X is an independently selected hydrolyzable substituent, (C) 15 to 70 mol % of an organotrialkoxysilane described by formula R2Si(OR3)3, where R2 is a hydrocarbon group comprising about 8 to 24 carbon atoms or a substituted hydrocarbon group comprising a hydrocarbon chain having about 8 to 24 carbon atoms and each R3 is an independently selected alkyl group comprising 1 to about 6 carbon atoms; in the presence of (D) water, (E) hydrolysis catalyst, and (F) organic solvent for the reaction product. The silicone resin is cured and heated in preferably an inert atmosphere at a temperature sufficient to effect thermolysis of carbon-carbon bonds of the R2 groups thereby forming a nanoporous silicone resin.
摘要翻译：具有低介电常数的纳米多孔有机硅树脂和有机硅树脂薄膜以及这种纳米多孔硅树脂的制备方法。硅氧烷树脂包括含有（A）15-70mol％四烷氧基硅烷的混合物的反应产物，其中R1是独立选择的含有1至约6个碳原子的烷基，（B）12至60mol％的式中R 4选自包含1至约6个碳原子的烷基和苯基，并且每个X是独立选择的可水解取代基的有机硅烷，（C）15至70mol％由式（I）表示的有机基三烷氧基硅烷其中R 2是包含约8至24个碳原子的烃基或包含具有约8至24个碳原子的烃链的取代烃基，并且每个R 3是独立选择的包含1至约6个碳原子的烷基; 在（D）水，（E）水解催化剂和（F）反应产物的（F）有机溶剂的存在下）。有机硅树脂在优选惰性气氛中在足以实现碳 - 碳键热解的温度下固化和加热的R2基团，从而形成纳米多孔硅树脂。

5. 发明申请

US20060157690A1 Organic insulator, organic thin film transistor array panel including organic insulator, and manufacturing method therefor 有权
标题翻译：有机绝缘体，包括有机绝缘体的有机薄膜晶体管阵列面板及其制造方法
公开(公告)号：US20060157690A1
公开(公告)日：2006-07-20
申请号：US11313431
申请日：2005-12-20
申请人： Yong-Uk Lee , Kyuha Chung , Mun-Pyo Hong , Do-Yeung Yoon , Jong-In Hong , Gia Kim
发明人： Yong-Uk Lee , Kyuha Chung , Mun-Pyo Hong , Do-Yeung Yoon , Jong-In Hong , Gia Kim
IPC分类号： H01L29/08
CPC分类号： H01L21/02118 , C08B37/0006 , H01L21/312 , H01L27/3244 , H01L51/052
摘要： An insulating film according to an embodiment of the present invention has Chemical Formula 1 wherein the Rs are equal to or different from each other, m is an integer, the Rs have Chemical Formula 2: R=R1R2R3) (2), and R1, R2, and R3 in the Chemical Formula 2 are one selected from Chemical Formulae 3, 4 and 5, respectively (n is an integer):
摘要翻译：根据本发明实施方案的绝缘膜具有化学式1，其中Rs相同或不同，m是整数，Rs具有化学式2：<？in-line-formula description =“In “=”lead“？> R = R <1> R <2> R <3>（2），<？in-line-formula description =“In-line Formulas”end =“tail”？>而化学式2中的R 1，R 2和R 3分别为化学式3,4和5中的一种（n为整数）：

6. 发明授权

US06979604B2 Method for forming pattern on substrate and method for fabricating liquid crystal display using the same 失效
标题翻译：在基板上形成图案的方法及使用该方法制造液晶显示器的方法
公开(公告)号：US06979604B2
公开(公告)日：2005-12-27
申请号：US10469495
申请日：2002-03-05
申请人： Young-Mi Tak , Woon-Yong Park , Jung-Ho Lee , Mun-Pyo Hong , Kyuha Chung
发明人： Young-Mi Tak , Woon-Yong Park , Jung-Ho Lee , Mun-Pyo Hong , Kyuha Chung
IPC分类号： G02F1/1368 , G02F1/1333 , G02F1/1362 , G03F7/00 , G03F7/20 , H01L21/475 , G03C5/56
CPC分类号： G03F7/0007 , G02F1/1362 , G02F2001/13625 , G03F7/0035 , Y10S438/946
摘要： The present invention relates to a method of forming a pattern on a substrate and a method of manufacturing a liquid crystal display panel using the same. In order to decrease stitch defect, the shot boundary lines for respective layers of patterns do not overlap each other to be dispersed. Specifically, according to a method of forming patterns of the present invention, after a first material layer is first formed on a substrate, a first pattern is formed by performing a first photo etching including divisional light exposure with at least two areas across at least one shot boundary line on the first material layer. Subsequently, after a second material layer is formed on the first pattern, a second pattern is formed by performing a second photo etching including divisional light exposure with at least two areas across at least one shot boundary line on the second material layer. The shot boundary line in the second photo etching is spaced apart from the shot boundary line in the first photo etching. A liquid crystal display panel is manufactured by using this forming method.
摘要翻译：本发明涉及在基板上形成图案的方法以及使用该图案的液晶显示面板的制造方法。为了减少针迹缺陷，各层图案的拍摄边界线彼此不重叠以分散。具体而言，根据本发明的图案的形成方法，首先在基板上形成第一材料层后，通过进行第一光蚀刻而形成第一图案，所述第一图案蚀刻包括具有至少两个区域的分光曝光在第一材料层上拍摄边界线。随后，在第一图案上形成第二材料层之后，通过在第二材料层上进行至少两个区域的至少两个区域的至少两个区域进行包括分光照射的第二光蚀刻来形成第二图案。在第一光刻蚀中，第二光蚀刻中的照射边界线与第一光蚀刻中的照射边界线隔开。通过使用该形成方法制造液晶显示面板。

7. 发明授权

US06231989B1 Method of forming coatings 失效
标题翻译：成膜方法
公开(公告)号：US06231989B1
公开(公告)日：2001-05-15
申请号：US09197249
申请日：1998-11-20
申请人： Kyuha Chung , Eric Scott Moyer , Michael John Spaulding
发明人： Kyuha Chung , Eric Scott Moyer , Michael John Spaulding
IPC分类号： B05D304
CPC分类号： C04B41/5035 , H01L21/316 , Y10S428/901 , Y10T428/24917 , Y10T428/24926 , Y10T428/31663
摘要： A coating is formed on a substrate by depositing a solution comprising a resin containing at least 2 Si—H groups and a solvent in a manner in which at least 5 volume % of the solvent remains in the coating after deposition followed by exposing the coating to an environment comprising a basic catalyst and water at a concentration sufficient to cause condensation of the Si—H groups and evaporating the solvent from the coating to form a porous network coating. The method of the invention is particularly useful for applying low dielectric constant coatings on electronic devices.
摘要翻译：通过沉积包含含有至少2个Si-H基团和溶剂的树脂的溶液在沉积之后以至少5体积％的溶剂保留在涂层中的方式在基底上形成涂层，然后将涂层暴露于包括碱性催化剂和水的环境，其浓度足以引起Si-H基团的缩合并从涂层蒸发溶剂以形成多孔网状涂层。本发明的方法对于在电子器件上施加低介电常数涂层特别有用。

8. 发明授权

US5756598A Resin-containing organosiloxane compositions curable to silicone elastomers having low weep 失效
标题翻译：含有有机硅氧烷组合物可固化成低渗漏的硅氧烷弹性体
公开(公告)号：US5756598A
公开(公告)日：1998-05-26
申请号：US774484
申请日：1996-12-30
申请人： Kyuha Chung , Stephen Clay Warren
发明人： Kyuha Chung , Stephen Clay Warren
IPC分类号： C08G77/12 , C08G77/20 , C08G77/24 , C08G77/385 , C08G77/392 , C08L83/04 , C09D183/04 , C09K3/10 , C08F283/00
CPC分类号： C09K3/1018 , C08G77/385 , C08G77/392 , C08L83/04 , C09D183/04 , C08G77/12 , C08G77/16 , C08G77/18 , C08G77/20 , Y10T428/31663
摘要： Organosiloxane compositions curable to silicone elastomers having improved weep properties are described. The compositions include an alkenyl-containing polydiorganosiloxane, an organohydrogensiloxane, a platinum-group metal catalyst and a MQ-type resinous organosiloxane copolymer; and a silicone elastomer prepared from such composition. A method of a minimizing the leakage of a hydrocarbon fluid from a container using the silicone elastomer is also described.
摘要翻译：描述了具有改善的流失特性的可固化到有机硅弹性体的有机硅氧烷组合物。所述组合物包括含烯基的聚二有机硅氧烷，有机氢硅氧烷，铂族金属催化剂和MQ型树脂有机硅氧烷共聚物; 和由该组合物制备的硅氧烷弹性体。还描述了使用硅氧烷弹性体最小化来自容器的烃流体的泄漏的方法。

9. 发明授权

US5036117A Heat-curable silicone compositions having improved bath life 失效
标题翻译：具有改善浴寿命的可热固化硅氧烷组合物
公开(公告)号：US5036117A
公开(公告)日：1991-07-30
申请号：US431352
申请日：1989-11-03
申请人： Kyuha Chung , Antony P. Wright , Ming-Hsiung Yeh
发明人： Kyuha Chung , Antony P. Wright , Ming-Hsiung Yeh
IPC分类号： B32B7/06 , B32B7/12 , C08F2/46 , C08K3/18 , C08K5/05 , C08K5/06 , C08K5/09 , C08K5/11 , C08L83/04 , C08L83/05 , C08L83/06 , C08L83/07 , C09D183/04 , C09D183/05 , C09D183/06 , C09D183/07 , C09J7/02
CPC分类号： C08L83/04 , C09D183/04 , C08G77/12 , C08G77/16 , C08G77/24
摘要： A curable organosilicon composition comprises a component having silicon-bonded hydrogen atoms, a component having silicon-bonded radicals reactive therewith, a curing catalyst, a catalyst-inhibitor and a bath life extender. The use of certain compounds, which are ineffective as a bath life extender in the absence of a catalyst inhibitor, effectively extend the room temperature bath life of a silicone coating composition containing a catalyst inhibitor. Being a substantial non-inhibitor for the catalyst the bath life extender component does not effect the cure time and/or cure temperature of the composition.This discovery has permitted the preparation of curable coating compositions which have a long bath life at room temperature and a rapid cure time at elevated temperatures which does not drift to longer intervals as the coating compositions ages over a typical production run.The room temperature cure times of the organopolysiloxane coating compositions of this invention are adequately long, and their cure times at elevated temperature are advantageously brief, that they are useful in fast-paced coating operations, such as adhesive release coating operations wherein the cured coating is further coated with an adhesive in-line, i.e., immediately after being cured.

10. 发明授权

US06984594B2 Deposition method of insulating layers having low dielectric constant of semiconductor devices 有权
标题翻译：具有低介电常数半导体器件的绝缘层的沉积方法
公开(公告)号：US06984594B2
公开(公告)日：2006-01-10
申请号：US10150480
申请日：2002-05-17
申请人： Sung-Hoon Yang , Glenn A. Cerny , Kyuha Chung , Byung-Keun Hwang , Wan-Shick Hong
发明人： Sung-Hoon Yang , Glenn A. Cerny , Kyuha Chung , Byung-Keun Hwang , Wan-Shick Hong
IPC分类号： H01L21/31
CPC分类号： H01L21/02126 , C23C16/401 , G02F1/1362 , H01L21/02211 , H01L21/02274 , H01L21/31633 , H01L23/5329 , H01L2924/0002 , H01L2924/00
摘要： The present invention relates to a process for vapor depositing alow dielectric insulating film, and more particularly to a process for vapor deposition of low dielectric insulating film that can significantly improve a vapor deposition speed while maintaining properties of the low dielectric insulating film, thereby solving parasitic capacitance problems to realize a high aperture ratio structure, and can reduce a process time by using silane gas when vapor depositing an insulating film by a CVD or PECVD method to form a protection film for a semiconductor device.
摘要翻译：本发明涉及一种用于气相沉积低介电绝缘膜的方法，更具体地说涉及一种低介电绝缘膜的气相淀积工艺，可以显着提高蒸镀速度，同时保持低介电绝缘膜的性能，从而解决寄生实现高开口率结构的电容问题，并且可以通过使用硅烷气体通过CVD或PECVD方法蒸镀绝缘膜时减少处理时间，从而形成用于半导体器件的保护膜。

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