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    • 1. 发明授权
    • Method for forming pattern on substrate and method for fabricating liquid crystal display using the same
    • 在基板上形成图案的方法及使用该方法制造液晶显示器的方法
    • US06979604B2
    • 2005-12-27
    • US10469495
    • 2002-03-05
    • Young-Mi TakWoon-Yong ParkJung-Ho LeeMun-Pyo HongKyuha Chung
    • Young-Mi TakWoon-Yong ParkJung-Ho LeeMun-Pyo HongKyuha Chung
    • G02F1/1368G02F1/1333G02F1/1362G03F7/00G03F7/20H01L21/475G03C5/56
    • G03F7/0007G02F1/1362G02F2001/13625G03F7/0035Y10S438/946
    • The present invention relates to a method of forming a pattern on a substrate and a method of manufacturing a liquid crystal display panel using the same. In order to decrease stitch defect, the shot boundary lines for respective layers of patterns do not overlap each other to be dispersed. Specifically, according to a method of forming patterns of the present invention, after a first material layer is first formed on a substrate, a first pattern is formed by performing a first photo etching including divisional light exposure with at least two areas across at least one shot boundary line on the first material layer. Subsequently, after a second material layer is formed on the first pattern, a second pattern is formed by performing a second photo etching including divisional light exposure with at least two areas across at least one shot boundary line on the second material layer. The shot boundary line in the second photo etching is spaced apart from the shot boundary line in the first photo etching. A liquid crystal display panel is manufactured by using this forming method.
    • 本发明涉及在基板上形成图案的方法以及使用该图案的液晶显示面板的制造方法。 为了减少针迹缺陷,各层图案的拍摄边界线彼此不重叠以分散。 具体而言,根据本发明的图案的形成方法,首先在基板上形成第一材料层后,通过进行第一光蚀刻而形成第一图案,所述第一图案蚀刻包括具有至少两个区域的分光曝光 在第一材料层上拍摄边界线。 随后,在第一图案上形成第二材料层之后,通过在第二材料层上进行至少两个区域的至少两个区域的至少两个区域进行包括分光照射的第二光蚀刻来形成第二图案。 在第一光刻蚀中,第二光蚀刻中的照射边界线与第一光蚀刻中的照射边界线隔开。 通过使用该形成方法制造液晶显示面板。
    • 3. 发明授权
    • Thin film transistor array panel for a liquid crystal display and a method for manufacturing the same
    • 一种用于液晶显示器的薄膜晶体管阵列面板及其制造方法
    • US07504290B2
    • 2009-03-17
    • US11750630
    • 2007-05-18
    • Mun-Pyo HongWoon-Yong ParkJong-Soo Yoon
    • Mun-Pyo HongWoon-Yong ParkJong-Soo Yoon
    • H01L21/84
    • G02F1/13458G02F1/1362G02F1/136227G02F2001/136236H01L27/12H01L27/124H01L27/1288H01L29/41733H01L29/458Y10S438/942Y10S438/947Y10S438/949
    • Simplified method of manufacturing liquid crystal displays. A gate wire including a gate line, a gate pad and a gate electrode is formed on the substrate by using the first mask. A gate insulating layer, a semiconductor layer, a ohmic contact layer and a metal layer are sequentially deposited to make a quadruple layers, and patterned by a dry etch of using the second mask. At this time, the quadruple layers is patterned to have a matrix of net shape layout and covering the gate wire. An opening exposing the substrate is formed in the display area and a contact hole exposing the gate pad is formed in the peripheral area. Next, ITO is deposited and a photoresist layer coated on the ITO. Then, the ITO layer is patterned by using the third mask and a dry etch, and the data conductor layer and the ohmic contact layer not covered by the ITO layer is dry etched. After depositing a passivation layer, a opening is formed by using the fourth mask and the exposed semiconductor layer through the opening is etched to separate the semiconductor layer under the adjacent data line.
    • 制造液晶显示器的简化方法。 通过使用第一掩模在基板上形成包括栅极线,栅极焊盘和栅电极的栅极线。 依次沉积栅极绝缘层,半导体层,欧姆接触层和金属层以制成四层,并通过使用第二掩模的干蚀刻图案化。 此时,四层被图案化以具有网状布局的矩阵并覆盖栅极线。 在显示区域形成露出基板的开口,在周边区域形成露出栅极焊盘的接触孔。 接下来,沉积ITO并且涂覆在ITO上的光致抗蚀剂层。 然后,通过使用第三掩模和干蚀刻对ITO层进行图案化,并且数据导体层和未被ITO层覆盖的欧姆接触层被干蚀刻。 在沉积钝化层之后,通过使用第四掩模形成开口,并蚀刻通过开口的暴露的半导体层以将相邻数据线下的半导体层分离。
    • 8. 发明授权
    • Thin film transistor array panel
    • 薄膜晶体管阵列面板
    • US06787809B2
    • 2004-09-07
    • US10644917
    • 2003-08-21
    • Mun-Pyo HongWoon-Yong ParkJong-Soo Yoon
    • Mun-Pyo HongWoon-Yong ParkJong-Soo Yoon
    • H01L2904
    • G02F1/13458G02F1/1362G02F1/136227G02F2001/136236H01L27/12H01L27/124H01L27/1288H01L29/41733H01L29/458Y10S438/942Y10S438/947Y10S438/949
    • Simplified method of manufacturing liquid crystal displays. A gate wire including a gate line, a gate pad and a gate electrode is formed on the substrate by using the first mask. A gate insulating layer, a semiconductor layer, a ohmic contact layer and a metal layer are sequentially deposited to make a quadruple layers, and patterned by a dry etch of using the second mask. At this time, the quadruple layers is patterned to have a matrix of net shape layout and covering the gate wire. An opening exposing the substrate is formed in the display area and a contact hole exposing the gate pad is formed in the peripheral area. Next, ITO is deposited and a photoresist layer coated on the ITO. Then, the ITO layer is patterned by using the third mask and a dry etch, and the data conductor layer and the ohmic contact layer not covered by the ITO layer is dry etched. After depositing a passivation layer, a opening is formed by using the fourth mask and the exposed semiconductor layer through the opening is etched to separate the semiconductor layer under the adjacent data line.
    • 制造液晶显示器的简化方法。 通过使用第一掩模在基板上形成包括栅极线,栅极焊盘和栅电极的栅极线。 依次沉积栅极绝缘层,半导体层,欧姆接触层和金属层以制成四层,并通过使用第二掩模的干蚀刻图案化。 此时,四层被图案化以具有网状布局的矩阵并覆盖栅极线。 在显示区域形成露出基板的开口,在周边区域形成露出栅极焊盘的接触孔。 接下来,沉积ITO并且涂覆在ITO上的光致抗蚀剂层。 然后,通过使用第三掩模和干蚀刻对ITO层进行图案化,并且数据导体层和未被ITO层覆盖的欧姆接触层被干蚀刻。 在沉积钝化层之后,通过使用第四掩模形成开口,并蚀刻通过开口的暴露的半导体层以将相邻数据线下的半导体层分离。
    • 9. 发明授权
    • Method for manufacturing thin film transistor array panel for LCD having a quadruple layer by a second photolithography process
    • 用于通过第二光刻工艺制造具有四重层的用于LCD的薄膜晶体管阵列面板的方法
    • US06642074B2
    • 2003-11-04
    • US10172982
    • 2002-06-18
    • Mun-Pyo HongWoon-Yong ParkJong-Soo Yoon
    • Mun-Pyo HongWoon-Yong ParkJong-Soo Yoon
    • H01L2100
    • G02F1/13458G02F1/1362G02F1/136227G02F2001/136236H01L27/12H01L27/124H01L27/1288H01L29/41733H01L29/458Y10S438/942Y10S438/947Y10S438/949
    • Simplified method of manufacturing liquid crystal displays. A gate wire including a gate line, a gate pad and a gate electrode is formed on the substrate by using the first mask. A gate insulating layer, a semiconductor layer, a ohmic contact layer and a metal layer are sequentially deposited to make a quadruple layers, and patterned by a dry etch of using the second mask. At this time, the quadruple layers is patterned to have a matrix of net shape layout and covering the gate wire. An opening exposing the substrate is formed in the display area and a contact hole exposing the gate pad is formed in the peripheral area. Next, ITO is deposited and a photoresist layer coated on the ITO. Then, the ITO layer is patterned by using the third mask and a dry etch, and the data conductor layer and the ohmic contact layer not covered by the ITO layer is dry etched. After depositing a passivation layer, a opening is formed by using the fourth mask and the exposed semiconductor layer through the opening is etched to separate the semiconductor layer under the adjacent data line.
    • 制造液晶显示器的简化方法。 通过使用第一掩模在基板上形成包括栅极线,栅极焊盘和栅电极的栅极线。 依次沉积栅极绝缘层,半导体层,欧姆接触层和金属层以制成四层,并通过使用第二掩模的干蚀刻图案化。 此时,四层被图案化以具有网状布局的矩阵并覆盖栅极线。 在显示区域形成露出基板的开口,在周边区域形成露出栅极焊盘的接触孔。 接下来,沉积ITO并且涂覆在ITO上的光致抗蚀剂层。 然后,通过使用第三掩模和干蚀刻对ITO层进行图案化,并且数据导体层和未被ITO层覆盖的欧姆接触层被干蚀刻。 在沉积钝化层之后,通过使用第四掩模形成开口,并蚀刻通过开口的暴露的半导体层以将相邻数据线下的半导体层分离。
    • 10. 发明授权
    • Method for manufacturing thin film transistor array panel for liquid crystal display
    • 制造液晶显示器用薄膜晶体管阵列面板的方法
    • US06429057B1
    • 2002-08-06
    • US09410760
    • 1999-10-01
    • Mun-Pyo HongWoon-Yong ParkJong-Soo Yoon
    • Mun-Pyo HongWoon-Yong ParkJong-Soo Yoon
    • H01L2100
    • G02F1/13458G02F1/1362G02F1/136227G02F2001/136236H01L27/12H01L27/124H01L27/1288H01L29/41733H01L29/458Y10S438/942Y10S438/947Y10S438/949
    • Simplified method of manufacturing liquid crystal displays. A gate wire including a gate line, a gate pad and a gate electrode is formed on the substrate by using the first mask. A gate insulating layer, a semiconductor layer, a ohmic contact layer and a metal layer are sequentially deposited to make a quadruple layers, and patterned by a dry etch of using the second mask. At this time, the quadruple layers is patterned to have a matrix of net shape layout and covering the gate wire. An opening exposing the substrate is formed in the display area and a contact hole exposing the gate pad is formed in the peripheral area. Next, ITO is deposited and a photoresist layer coated on the ITO. Then, the ITO layer is patterned by using the third mask and a dry etch, and the data conductor layer and the ohmic contact layer not covered by the ITO layer is dry etched. After depositing a passivation layer, a opening is formed by using the fourth mask and the exposed semiconductor layer through the opening is etched to separate the semiconductor layer under the adjacent data line.
    • 制造液晶显示器的简化方法。 通过使用第一掩模在基板上形成包括栅极线,栅极焊盘和栅电极的栅极线。 依次沉积栅极绝缘层,半导体层,欧姆接触层和金属层以制成四层,并通过使用第二掩模的干蚀刻图案化。 此时,四层被图案化以具有网状布局的矩阵并覆盖栅极线。 在显示区域形成露出基板的开口,在周边区域形成露出栅极焊盘的接触孔。 接下来,沉积ITO并且涂覆在ITO上的光致抗蚀剂层。 然后,通过使用第三掩模和干蚀刻对ITO层进行图案化,并且数据导体层和未被ITO层覆盖的欧姆接触层被干蚀刻。 在沉积钝化层之后,通过使用第四掩模形成开口,并蚀刻通过开口的暴露的半导体层以将相邻数据线下的半导体层分离。