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1. 发明授权

US08293647B2 Bottom up plating by organic surface passivation and differential plating retardation 失效
标题翻译：通过有机表面钝化和差分电镀延迟向下电镀
公开(公告)号：US08293647B2
公开(公告)日：2012-10-23
申请号：US12620818
申请日：2009-11-18
申请人： Jenn-Yue Wang , Hua Chung , Rong Tao , Hong Zhang
发明人： Jenn-Yue Wang , Hua Chung , Rong Tao , Hong Zhang
IPC分类号： H01L21/44
CPC分类号： H01L21/76877 , C25D5/022 , C25D5/10 , H01L21/2885 , H01L21/321 , H01L2221/1063
摘要： Embodiments of the present invention generally relates to an apparatus and a method for processing semiconductor substrates. One embodiment provides a method provides a method for processing a substrate comprising forming a seed layer over a substrate having trench or via structures formed therein, coating a portion of the seed layer with an organic passivation film, and immersing the trench or via structures in a plating solution to deposit a conductive material over the seed layer not covered by the organic passivation film.
摘要翻译：本发明的实施例一般涉及用于处理半导体衬底的装置和方法。一个实施例提供了一种提供用于处理衬底的方法的方法，包括在其上形成有沟槽或通孔结构的衬底上形成晶种层，用有机钝化膜涂覆种子层的一部分，以及将沟槽或通孔结构浸入电镀溶液以在未被有机钝化膜覆盖的种子层上沉积导电材料。

2. 发明申请

US20100130007A1 BOTTOM UP PLATING BY ORGANIC SURFACE PASSIVATION AND DIFFERENTIAL PLATING RETARDATION 失效
标题翻译：有机表面钝化和不均匀镀层延展的底层
公开(公告)号：US20100130007A1
公开(公告)日：2010-05-27
申请号：US12620818
申请日：2009-11-18
申请人： JENN-YUE WANG , Hua Chung , Rong Tao , Hong Zhang
发明人： JENN-YUE WANG , Hua Chung , Rong Tao , Hong Zhang
IPC分类号： H01L21/3205
CPC分类号： H01L21/76877 , C25D5/022 , C25D5/10 , H01L21/2885 , H01L21/321 , H01L2221/1063
摘要： Embodiments of the present invention generally relates to an apparatus and a method for processing semiconductor substrates. One embodiment provides a method provides a method for processing a substrate comprising forming a seed layer over a substrate having trench or via structures formed therein, coating a portion of the seed layer with an organic passivation film, and immersing the trench or via structures in a plating solution to deposit a conductive material over the seed layer not covered by the organic passivation film.
摘要翻译：本发明的实施例一般涉及用于处理半导体衬底的装置和方法。一个实施例提供了一种提供用于处理衬底的方法的方法，包括在其上形成有沟槽或通孔结构的衬底上形成晶种层，用有机钝化膜涂覆种子层的一部分，以及将沟槽或通孔结构浸入电镀溶液以在未被有机钝化膜覆盖的种子层上沉积导电材料。

3. 发明申请

US20080254613A1 METHODS FOR FORMING METAL INTERCONNECT STRUCTURE FOR THIN FILM TRANSISTOR APPLICATIONS 审中-公开
标题翻译：用于形成薄膜晶体管应用的金属互连结构的方法
公开(公告)号：US20080254613A1
公开(公告)日：2008-10-16
申请号：US11733203
申请日：2007-04-10
申请人： Yanping Li , Hien-Minh Le , Hong Zhang , Jenn Yue Wang
发明人： Yanping Li , Hien-Minh Le , Hong Zhang , Jenn Yue Wang
IPC分类号： H01L21/4763
CPC分类号： H01L21/2855 , H01L21/67207 , H01L21/67236 , H01L27/124 , H01L29/458 , H01L29/4908
摘要： Methods for forming a metal interconnection structure in thin-film transistor applications are provided in the present invention. In one embodiment, the method may include providing a substrate into a processing chamber, supplying a first gas mixture into the chamber to deposit a metal layer on the substrate, and supplying a second gas mixture into the chamber to deposit a barrier layer on the metal layer. In another embodiment, a metal interconnection structure may include a substrate, a first barrier layer disposed on the substrate, a metal layer disposed on the substrate in a processing chamber, a second barrier layer disposed on the metal layer formed in the processing chamber a second barrier layer disposed on the metal layer formed in the processing chamber, wherein the first barrier layer, the metal layer and the second barrier layer are configured to form a metal interconnection structure for TFT devices.
摘要翻译：在本发明中提供了在薄膜晶体管应用中形成金属互连结构的方法。在一个实施例中，该方法可以包括将衬底提供到处理室中，将第一气体混合物供应到室中以在衬底上沉积金属层，并将第二气体混合物供应到室中以在金属上沉积阻挡层层。在另一个实施例中，金属互连结构可以包括衬底，设置在衬底上的第一阻挡层，设置在处理室中的衬底上的金属层，设置在形成在处理室中的金属层上的第二阻挡层，第二阻挡层，其设置在形成在所述处理室中的所述金属层上，其中所述第一阻挡层，所述金属层和所述第二阻挡层被配置为形成TFT器件的金属互连结构。

4. 发明授权

US08318266B2 Enhanced copper growth with ultrathin barrier layer for high performance interconnects 有权
公开(公告)号：US08318266B2
公开(公告)日：2012-11-27
申请号：US11470922
申请日：2006-09-07
申请人： Ling Chen , Hua Chung , Barry L. Chin , Hong Zhang
发明人： Ling Chen , Hua Chung , Barry L. Chin , Hong Zhang
IPC分类号： C23C16/00 , C23C14/02 , H05H1/00
CPC分类号： H01L21/28562 , C23C16/34 , C23C16/4411 , C23C16/4412 , C23C16/45504 , C23C16/45508 , C23C16/45512 , C23C16/45525 , C23C16/45544 , C23C16/45563 , C23C16/45582 , H01L21/76843 , H01L21/76846 , H01L21/76871
摘要： A method for depositing a refractory metal nitride barrier layer having a thickness of about 20 angstroms or less is provided. In one aspect, the refractory metal nitride layer is formed by introducing a pulse of a metal-containing compound followed by a pulse of a nitrogen-containing compound. The refractory metal nitride barrier layer provides adequate barrier properties and allows the grain growth of the first metal layer to continue across the barrier layer into the second metal layer thereby enhancing the electrical performance of the interconnect.

5. 发明申请

US20060251872A1 Conductive barrier layer, especially an alloy of ruthenium and tantalum and sputter deposition thereof 审中-公开
标题翻译：导电阻挡层，特别是钌和钽的合金，并进行溅射沉积
公开(公告)号：US20060251872A1
公开(公告)日：2006-11-09
申请号：US11124611
申请日：2005-05-05
申请人： Jenn Wang , Wei Wang , Ronjun Wang , Yoichiro Tanaka , Hua Chung , Hong Zhang , Jick Yu , Praburam Gopalraja , Jianming Fu
发明人： Jenn Wang , Wei Wang , Ronjun Wang , Yoichiro Tanaka , Hua Chung , Hong Zhang , Jick Yu , Praburam Gopalraja , Jianming Fu
IPC分类号： B32B3/00
CPC分类号： B32B15/018 , C23C14/3414 , H01L21/2855 , H01L21/76844 , H01L23/53238 , H01L2924/0002 , Y10T428/24917 , H01L2924/00
摘要： A fabrication method, a product structure, a fabrication method, and a sputtering target for the deposition of a conductive barrier or other liner layer in an interconnect structure. The barrier layer comprises a conductive metal of a refractory noble metal alloy, such as a ruthenium/tantalum alloy, which may be amorphous though it is not required to be so. The barrier layer may be sputtered from a target of similar composition. The barrier and target composition may be chosen from a combination of the refractory metals and the platinum-group metals as well as RuTa. A copper noble seed layer may be formed of an alloy of copper and ruthenium in contact to a barrier layer over the dielectric.
摘要翻译：用于在互连结构中沉积导电屏障或其它衬垫层的制造方法，产品结构，制造方法和溅射靶。阻挡层包括难熔贵金属合金如钌/钽合金的导电金属，其可以是无定形的，尽管不需要这样。阻挡层可以从类似组成的靶溅射。阻挡层和靶组成可以选自难熔金属和铂族金属以及RuTa的组合。铜高贵种子层可以由铜和钌的合金形成，与电介质上的阻挡层接触。

6. 发明申请

US20070003698A1 ENHANCED COPPER GROWTH WITH ULTRATHIN BARRIER LAYER FOR HIGH PERFORMANCE INTERCONNECTS 有权
公开(公告)号：US20070003698A1
公开(公告)日：2007-01-04
申请号：US11470915
申请日：2006-09-07
申请人： LING CHEN , Hua Chung , Barry Chin , Hong Zhang
发明人： LING CHEN , Hua Chung , Barry Chin , Hong Zhang
IPC分类号： C23C16/00
CPC分类号： H01L21/28562 , C23C16/34 , C23C16/4411 , C23C16/4412 , C23C16/45504 , C23C16/45508 , C23C16/45512 , C23C16/45525 , C23C16/45544 , C23C16/45563 , C23C16/45582 , H01L21/76843 , H01L21/76846 , H01L21/76871
摘要： A method for depositing a refractory metal nitride barrier layer having a thickness of about 20 angstroms or less is provided. In one aspect, the refractory metal nitride layer is formed by introducing a pulse of a metal-containing compound followed by a pulse of a nitrogen-containing compound. The refractory metal nitride barrier layer provides adequate barrier properties and allows the grain growth of the first metal layer to continue across the barrier layer into the second metal layer thereby enhancing the electrical performance of the interconnect.

7. 发明授权

US08293328B2 Enhanced copper growth with ultrathin barrier layer for high performance interconnects 有权
标题翻译：增强铜生长与超薄屏障层的高性能互连
公开(公告)号：US08293328B2
公开(公告)日：2012-10-23
申请号：US11470915
申请日：2006-09-07
申请人： Ling Chen , Hua Chung , Barry L. Chin , Hong Zhang
发明人： Ling Chen , Hua Chung , Barry L. Chin , Hong Zhang
IPC分类号： C23C16/00
CPC分类号： H01L21/28562 , C23C16/34 , C23C16/4411 , C23C16/4412 , C23C16/45504 , C23C16/45508 , C23C16/45512 , C23C16/45525 , C23C16/45544 , C23C16/45563 , C23C16/45582 , H01L21/76843 , H01L21/76846 , H01L21/76871
摘要： A method for depositing a refractory metal nitride barrier layer having a thickness of about 20 angstroms or less is provided. In one aspect, the refractory metal nitride layer is formed by introducing a pulse of a metal-containing compound followed by a pulse of a nitrogen-containing compound. The refractory metal nitride barrier layer provides adequate barrier properties and allows the grain growth of the first metal layer to continue across the barrier layer into the second metal layer thereby enhancing the electrical performance of the interconnect.
摘要翻译：提供了一种沉积具有约20埃或更小厚度的难熔金属氮化物阻挡层的方法。一方面，难熔金属氮化物层是通过引入含金属化合物的脉冲，随后是含氮化合物的脉冲而形成的。难熔金属氮化物阻挡层提供了足够的阻挡性能，并且允许第一金属层的晶粒生长继续穿过阻挡层进入第二金属层，从而增强了互连的电性能。

8. 发明申请

US20070099415A1 INTEGRATION PROCESS OF TUNGSTEN ATOMIC LAYER DEPOSITION FOR METALLIZATION APPLICATION 审中-公开
标题翻译：用于金属化应用的金属原子层沉积的集成过程
公开(公告)号：US20070099415A1
公开(公告)日：2007-05-03
申请号：US11549941
申请日：2006-10-16
申请人： Ling Chen , Hua Chung , Sean Seutter , Michael Yang , Ming Xi , Vincent Ku , Dien-Yeh Wu , Alan Ouye , Norman Nakashima , Barry Chin , Hong Zhang
发明人： Ling Chen , Hua Chung , Sean Seutter , Michael Yang , Ming Xi , Vincent Ku , Dien-Yeh Wu , Alan Ouye , Norman Nakashima , Barry Chin , Hong Zhang
IPC分类号： H01L21/4763 , H01L21/44
CPC分类号： H01L21/28562 , C23C16/34 , C23C16/4411 , C23C16/4412 , C23C16/45504 , C23C16/45508 , C23C16/45512 , C23C16/45525 , C23C16/45544 , C23C16/45563 , C23C16/45582 , H01L21/76843 , H01L21/76846 , H01L21/76871
摘要： In one embodiment, a method for forming a tungsten-containing material on a substrate is provided which includes positioning a substrate having an underlying tungsten layer within a process chamber and depositing a tungsten-containing barrier layer on the underlying tungsten layer during a cyclical layer deposition process. The tungsten-containing barrier layer contains a refractory metal nitride material. The method further provides depositing a seed layer on the tungsten-containing barrier layer during a vapor deposition process and depositing a bulk tungsten layer on the seed layer during a chemical vapor deposition process.
摘要翻译：在一个实施例中，提供了一种在衬底上形成含钨材料的方法，其包括将具有下层钨层的衬底定位在处理室内，并且在循环层沉积期间将下述钨层上沉积含钨阻挡层处理。含钨阻挡层含有难熔金属氮化物材料。该方法进一步提供在气相沉积工艺期间在含钨阻挡层上沉积种子层，并且在化学气相沉积工艺期间在种子层上沉积体钨层。

9. 发明申请

US20070026147A1 ENHANCED COPPER GROWTH WITH ULTRATHIN BARRIER LAYER FOR HIGH PERFORMANCE INTERCONNECTS 有权
标题翻译：用于高性能互连的超级屏障层的增强铜生长
公开(公告)号：US20070026147A1
公开(公告)日：2007-02-01
申请号：US11470922
申请日：2006-09-07
申请人： LING CHEN , Hua Chung , Barry Chin , Hong Zhang
发明人： LING CHEN , Hua Chung , Barry Chin , Hong Zhang
IPC分类号： C23C16/00
CPC分类号： H01L21/28562 , C23C16/34 , C23C16/4411 , C23C16/4412 , C23C16/45504 , C23C16/45508 , C23C16/45512 , C23C16/45525 , C23C16/45544 , C23C16/45563 , C23C16/45582 , H01L21/76843 , H01L21/76846 , H01L21/76871
摘要： A method for depositing a refractory metal nitride barrier layer having a thickness of about 20 angstroms or less is provided. In one aspect, the refractory metal nitride layer is formed by introducing a pulse of a metal-containing compound followed by a pulse of a nitrogen-containing compound. The refractory metal nitride barrier layer provides adequate barrier properties and allows the grain growth of the first metal layer to continue across the barrier layer into the second metal layer thereby enhancing the electrical performance of the interconnect.
摘要翻译：提供了一种沉积具有约20埃或更小厚度的难熔金属氮化物阻挡层的方法。一方面，难熔金属氮化物层是通过引入含金属化合物的脉冲，随后是含氮化合物的脉冲而形成的。难熔金属氮化物阻挡层提供了足够的阻挡性能，并且允许第一金属层的晶粒生长继续穿过阻挡层进入第二金属层，从而增强了互连的电性能。

10. 发明公开

US20240262865A1 Calcium independent phosphatidylserine binding compounds for detecting phosphatidylserine positive cells 审中-公开
公开(公告)号：US20240262865A1
公开(公告)日：2024-08-08
申请号：US18099258
申请日：2023-01-19
申请人： Hong Zhang , Xinfang Zhao
发明人： Hong Zhang , Xinfang Zhao
IPC分类号： C07K7/64 , G01N33/58
CPC分类号： C07K7/64 , G01N33/582 , C07K2319/40
摘要： The present invention relates to the phosphatidylserine (PS) binding compound derivative and the fusion of PS binding compound with an arm compound. The present invention describes the methods of producing and using PS binding compound derivative and the fusion of PS binding compound with an arm compound by providing the functional group to couple with functional group containing fluorophore for multicolor flow cytometry and multiplex imaging; to conjugate with magnetic particle for depleting the PS positive cells; to couple with oligo comprising PCR handle sequence, and unique DNA barcode for PS positive cells and capture sequence for discriminating positive cells from live cells in Single-cell RNA sequencing.

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