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    • 7. 发明授权
    • Conformal thin films over textured capacitor electrodes
    • 电容电极上的保形薄膜
    • US06831315B2
    • 2004-12-14
    • US09791072
    • 2001-02-22
    • Ivo RaaijmakersSuvi P. HaukkaErnst H. A. Granneman
    • Ivo RaaijmakersSuvi P. HaukkaErnst H. A. Granneman
    • H01L27108
    • H01L28/40H01L21/02159H01L21/02178H01L21/02183H01L21/02186H01L21/02189H01L21/022H01L21/0228H01L21/02304H01L21/31604H01L21/3162H01L21/31691H01L27/10852H01L27/10861H01L28/84Y10T428/265
    • Method and structures are provided for conformal capacitor dielectrics over textured silicon electrodes for integrated memory cells. Capacitor structures and first electrodes or plates are formed above or within semiconductor substrates. The first electrodes include hemispherical grain (HSG) silicon for increasing the capacitor plate surface area. The HSG topography is then exposed to alternating chemistries to form monolayers of a desired dielectric material. Exemplary process flows include alternately pulsed metal organic and oxygen source gases injected into a constant carrier flow. Self-terminated metal layers are thus reacted with oxygen. Near perfect step coverage allows minimal thickness for a capacitor dielectric, given leakage concerns for particular materials, thereby maximizing the capacitance for the memory cell and increasing cell reliability for a given memory cell design. Alternately pulsed chemistries are also provided for depositing top electrode materials with continuous coverage of capacitor dielectric, realizing the full capacitance benefits of the underlying textured morphology.
    • 提供了用于集成存储器单元的织构化硅电极上的适形电容器电介质的方法和结构。 电容器结构和第一电极或板形成在半导体衬底之上或之内。 第一电极包括用于增加电容器板表面积的半球形晶粒(HSG)硅。 然后将HSG形貌暴露于交替的化学物质以形成所需介电材料的单层。 示例性工艺流程包括注入恒定载流子的交替脉冲的金属有机和氧源气体。 因此,自身端接的金属层与氧气反应。 接近完美的步骤覆盖允许电容器电介质的最小厚度,给定特定材料的泄漏问题,从而使存储器单元的电容最大化,并提高给定存储单元设计的单元可靠性。 还提供了替代脉冲化学物质用于沉积具有电容器电介质的连续覆盖的顶部电极材料,实现了下面的织构形态的全电容益处。